JP2022548986A5 - - Google Patents
Info
- Publication number
- JP2022548986A5 JP2022548986A5 JP2022518281A JP2022518281A JP2022548986A5 JP 2022548986 A5 JP2022548986 A5 JP 2022548986A5 JP 2022518281 A JP2022518281 A JP 2022518281A JP 2022518281 A JP2022518281 A JP 2022518281A JP 2022548986 A5 JP2022548986 A5 JP 2022548986A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- acid
- chemical mechanical
- group
- combinations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962904861P | 2019-09-24 | 2019-09-24 | |
| US62/904,861 | 2019-09-24 | ||
| PCT/US2020/051901 WO2021061591A1 (en) | 2019-09-24 | 2020-09-22 | With-in die non-uniformities (wid-nu) in planarization |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022548986A JP2022548986A (ja) | 2022-11-22 |
| JP2022548986A5 true JP2022548986A5 (enExample) | 2023-07-03 |
| JP7803852B2 JP7803852B2 (ja) | 2026-01-21 |
Family
ID=75166383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022518281A Active JP7803852B2 (ja) | 2019-09-24 | 2020-09-22 | 平坦化におけるダイ内不均一性 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20220372332A1 (enExample) |
| EP (1) | EP4034606A4 (enExample) |
| JP (1) | JP7803852B2 (enExample) |
| KR (1) | KR20220066937A (enExample) |
| CN (1) | CN114450366B (enExample) |
| IL (1) | IL291525B2 (enExample) |
| TW (1) | TWI795674B (enExample) |
| WO (1) | WO2021061591A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250171658A1 (en) * | 2022-03-14 | 2025-05-29 | Versum Materials Us, Llc | Stable Chemical Mechanical Planarization Polishing Compositions And Methods For High Rate Silicon Oxide Removal |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US6692546B2 (en) * | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| WO2007047454A2 (en) * | 2005-10-14 | 2007-04-26 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
| WO2007102138A2 (en) * | 2007-01-02 | 2007-09-13 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
| US20090032765A1 (en) * | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
| TW200946621A (en) * | 2007-10-29 | 2009-11-16 | Ekc Technology Inc | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| EP2649144A4 (en) | 2010-12-10 | 2014-05-14 | Basf Se | AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS |
| US8916061B2 (en) * | 2012-03-14 | 2014-12-23 | Cabot Microelectronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| JP5927059B2 (ja) | 2012-06-19 | 2016-05-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた基板の製造方法 |
| US20150104940A1 (en) * | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
| US9752057B2 (en) * | 2014-02-05 | 2017-09-05 | Cabot Microelectronics Corporation | CMP method for suppression of titanium nitride and titanium/titanium nitride removal |
| US10217645B2 (en) * | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US10032644B2 (en) * | 2015-06-05 | 2018-07-24 | Versum Materials Us, Llc | Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives |
| US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
| TWI642810B (zh) * | 2016-06-07 | 2018-12-01 | 美商卡博特微電子公司 | 用於處理鎳基板表面之化學機械加工漿料及方法 |
| US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| US20190127607A1 (en) * | 2017-10-27 | 2019-05-02 | Versum Materials Us, Llc | Composite Particles, Method of Refining and Use Thereof |
-
2020
- 2020-09-22 JP JP2022518281A patent/JP7803852B2/ja active Active
- 2020-09-22 EP EP20868206.2A patent/EP4034606A4/en active Pending
- 2020-09-22 TW TW109132713A patent/TWI795674B/zh active
- 2020-09-22 US US17/754,038 patent/US20220372332A1/en active Pending
- 2020-09-22 WO PCT/US2020/051901 patent/WO2021061591A1/en not_active Ceased
- 2020-09-22 CN CN202080066800.7A patent/CN114450366B/zh active Active
- 2020-09-22 IL IL291525A patent/IL291525B2/en unknown
- 2020-09-22 KR KR1020227013253A patent/KR20220066937A/ko active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6437870B2 (ja) | シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 | |
| TWI546372B (zh) | 用於選擇性移除氮化矽之化學機械拋光(cmp)組合物及方法 | |
| JP6023125B2 (ja) | 化学的機械的研磨スラリー組成物およびそれを使用した銅のための方法およびシリコン貫通ビア適用 | |
| JP5413456B2 (ja) | 半導体基板用研磨液及び半導体基板の研磨方法 | |
| JP5655879B2 (ja) | Cmp研磨剤及び基板の研磨方法 | |
| JP5153623B2 (ja) | 研磨組成物の製造方法 | |
| JP7534283B2 (ja) | 研磨用組成物 | |
| JP6581299B2 (ja) | Cmp用スラリー組成物及びこれを用いた研磨方法 | |
| JP2013041992A (ja) | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 | |
| TW201024397A (en) | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate | |
| CN110914958A (zh) | 基板的研磨方法及研磨用组合物套组 | |
| JP6021583B2 (ja) | 基板を研磨する方法 | |
| CN110088359B (zh) | 高温cmp组合物及其使用方法 | |
| JP2025109973A (ja) | Cmpスラリー | |
| TWI512809B (zh) | 於堆疊裝置製造中用於形成穿底晶圓貫孔的方法 | |
| JP7548689B2 (ja) | タングステン用の化学機械研磨組成物及び方法 | |
| JP2022548986A5 (enExample) | ||
| TW200424296A (en) | Process and slurry for chemical mechanical polishing | |
| JP6021584B2 (ja) | 調整可能な研磨配合物を用いて研磨する方法 | |
| JP2012156181A (ja) | 半導体基板用洗浄液及びそれを用いた洗浄方法 | |
| JP7518824B2 (ja) | 研磨液及び研磨方法 | |
| JP7120846B2 (ja) | 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法 | |
| TWI795674B (zh) | 阻障物化學機械平坦化(cmp)研磨組合物、系統及其研磨方法 | |
| JPWO2008117593A1 (ja) | 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 | |
| JP6638660B2 (ja) | 洗浄液 |