JP7803852B2 - 平坦化におけるダイ内不均一性 - Google Patents

平坦化におけるダイ内不均一性

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Publication number
JP7803852B2
JP7803852B2 JP2022518281A JP2022518281A JP7803852B2 JP 7803852 B2 JP7803852 B2 JP 7803852B2 JP 2022518281 A JP2022518281 A JP 2022518281A JP 2022518281 A JP2022518281 A JP 2022518281A JP 7803852 B2 JP7803852 B2 JP 7803852B2
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JP
Japan
Prior art keywords
polishing composition
acid
chemical mechanical
weight
combinations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022518281A
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English (en)
Japanese (ja)
Other versions
JP2022548986A (ja
JP2022548986A5 (enExample
Inventor
カン ルー
アレン シュルーター ジェイムズ
チャンドラカント タンボリ ドニャネーシュ
Original Assignee
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー filed Critical バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Publication of JP2022548986A publication Critical patent/JP2022548986A/ja
Publication of JP2022548986A5 publication Critical patent/JP2022548986A5/ja
Application granted granted Critical
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Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2022518281A 2019-09-24 2020-09-22 平坦化におけるダイ内不均一性 Active JP7803852B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962904861P 2019-09-24 2019-09-24
US62/904,861 2019-09-24
PCT/US2020/051901 WO2021061591A1 (en) 2019-09-24 2020-09-22 With-in die non-uniformities (wid-nu) in planarization

Publications (3)

Publication Number Publication Date
JP2022548986A JP2022548986A (ja) 2022-11-22
JP2022548986A5 JP2022548986A5 (enExample) 2023-07-03
JP7803852B2 true JP7803852B2 (ja) 2026-01-21

Family

ID=75166383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022518281A Active JP7803852B2 (ja) 2019-09-24 2020-09-22 平坦化におけるダイ内不均一性

Country Status (8)

Country Link
US (1) US20220372332A1 (enExample)
EP (1) EP4034606A4 (enExample)
JP (1) JP7803852B2 (enExample)
KR (1) KR20220066937A (enExample)
CN (1) CN114450366B (enExample)
IL (1) IL291525B2 (enExample)
TW (1) TWI795674B (enExample)
WO (1) WO2021061591A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250171658A1 (en) * 2022-03-14 2025-05-29 Versum Materials Us, Llc Stable Chemical Mechanical Planarization Polishing Compositions And Methods For High Rate Silicon Oxide Removal

Citations (6)

* Cited by examiner, † Cited by third party
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JP2004027165A (ja) 2001-07-23 2004-01-29 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2014000641A (ja) 2012-06-19 2014-01-09 Fujimi Inc 研磨用組成物及びそれを用いた基板の製造方法
JP2014505124A (ja) 2010-12-10 2014-02-27 ビーエーエスエフ ソシエタス・ヨーロピア 酸化ケイ素誘電体膜およびポリシリコン膜を含有する基板を化学的機械的に研磨するための水性研磨組成物および方法
JP2016167580A (ja) 2015-02-12 2016-09-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンケミカルメカニカル研磨におけるディッシング低減
JP2017105980A (ja) 2015-09-25 2017-06-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ストップ‐オンシリコンコーティング層添加剤
JP2018019075A (ja) 2016-07-01 2018-02-01 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー バリア化学機械平坦化のための添加剤

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
WO2007047454A2 (en) * 2005-10-14 2007-04-26 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
US9752057B2 (en) * 2014-02-05 2017-09-05 Cabot Microelectronics Corporation CMP method for suppression of titanium nitride and titanium/titanium nitride removal
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
TWI642810B (zh) * 2016-06-07 2018-12-01 美商卡博特微電子公司 用於處理鎳基板表面之化學機械加工漿料及方法
US20190127607A1 (en) * 2017-10-27 2019-05-02 Versum Materials Us, Llc Composite Particles, Method of Refining and Use Thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027165A (ja) 2001-07-23 2004-01-29 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2014505124A (ja) 2010-12-10 2014-02-27 ビーエーエスエフ ソシエタス・ヨーロピア 酸化ケイ素誘電体膜およびポリシリコン膜を含有する基板を化学的機械的に研磨するための水性研磨組成物および方法
JP2014000641A (ja) 2012-06-19 2014-01-09 Fujimi Inc 研磨用組成物及びそれを用いた基板の製造方法
JP2016167580A (ja) 2015-02-12 2016-09-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンケミカルメカニカル研磨におけるディッシング低減
JP2017105980A (ja) 2015-09-25 2017-06-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ストップ‐オンシリコンコーティング層添加剤
JP2018019075A (ja) 2016-07-01 2018-02-01 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー バリア化学機械平坦化のための添加剤

Also Published As

Publication number Publication date
IL291525B1 (en) 2025-12-01
IL291525A (en) 2022-05-01
JP2022548986A (ja) 2022-11-22
CN114450366A (zh) 2022-05-06
EP4034606A1 (en) 2022-08-03
EP4034606A4 (en) 2023-10-18
IL291525B2 (en) 2026-04-01
TWI795674B (zh) 2023-03-11
WO2021061591A1 (en) 2021-04-01
CN114450366B (zh) 2024-07-12
US20220372332A1 (en) 2022-11-24
KR20220066937A (ko) 2022-05-24
TW202112990A (zh) 2021-04-01

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