TWI795674B - 阻障物化學機械平坦化（ｃｍｐ）研磨組合物、系統及其研磨方法 - Google Patents

阻障物化學機械平坦化（ｃｍｐ）研磨組合物、系統及其研磨方法 Download PDF

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Publication number
TWI795674B
TWI795674B TW109132713A TW109132713A TWI795674B TW I795674 B TWI795674 B TW I795674B TW 109132713 A TW109132713 A TW 109132713A TW 109132713 A TW109132713 A TW 109132713A TW I795674 B TWI795674 B TW I795674B
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TW
Taiwan
Prior art keywords
weight
acid
barrier
polishing composition
chemical mechanical
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TW109132713A
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English (en)
Chinese (zh)
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TW202112990A (zh
Inventor
甘露
詹姆士艾倫 史魯特
迪昂奈許向魯康德 坦波利
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美商慧盛材料美國責任有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW109132713A 2019-09-24 2020-09-22 阻障物化學機械平坦化（ｃｍｐ）研磨組合物、系統及其研磨方法 TWI795674B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962904861P 2019-09-24 2019-09-24
US62/904,861 2019-09-24

Publications (2)

Publication Number Publication Date
TW202112990A TW202112990A (zh) 2021-04-01
TWI795674B true TWI795674B (zh) 2023-03-11

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TW109132713A TWI795674B (zh) 2019-09-24 2020-09-22 阻障物化學機械平坦化（ｃｍｐ）研磨組合物、系統及其研磨方法

Country Status (8)

Country Link
US (1) US20220372332A1 (enExample)
EP (1) EP4034606A4 (enExample)
JP (1) JP7803852B2 (enExample)
KR (1) KR20220066937A (enExample)
CN (1) CN114450366B (enExample)
IL (1) IL291525B2 (enExample)
TW (1) TWI795674B (enExample)
WO (1) WO2021061591A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250171658A1 (en) * 2022-03-14 2025-05-29 Versum Materials Us, Llc Stable Chemical Mechanical Planarization Polishing Compositions And Methods For High Rate Silicon Oxide Removal

Citations (3)

* Cited by examiner, † Cited by third party
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CN106566412A (zh) * 2015-09-25 2017-04-19 气体产品与化学公司 含硅层停止型添加剂
TW201817918A (zh) * 2016-06-07 2018-05-16 卡博特微電子公司 用於處理鎳基板表面之化學機械加工漿料及方法
TW201920588A (zh) * 2013-10-11 2019-06-01 美商慧盛材料美國責任有限公司 阻絕物的化學機械平坦化組合物

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SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
WO2007047454A2 (en) * 2005-10-14 2007-04-26 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
EP2649144A4 (en) 2010-12-10 2014-05-14 Basf Se AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
JP5927059B2 (ja) 2012-06-19 2016-05-25 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた基板の製造方法
US9752057B2 (en) * 2014-02-05 2017-09-05 Cabot Microelectronics Corporation CMP method for suppression of titanium nitride and titanium/titanium nitride removal
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US20190127607A1 (en) * 2017-10-27 2019-05-02 Versum Materials Us, Llc Composite Particles, Method of Refining and Use Thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201920588A (zh) * 2013-10-11 2019-06-01 美商慧盛材料美國責任有限公司 阻絕物的化學機械平坦化組合物
CN106566412A (zh) * 2015-09-25 2017-04-19 气体产品与化学公司 含硅层停止型添加剂
TW201817918A (zh) * 2016-06-07 2018-05-16 卡博特微電子公司 用於處理鎳基板表面之化學機械加工漿料及方法

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Publication number Publication date
IL291525B1 (en) 2025-12-01
IL291525A (en) 2022-05-01
JP2022548986A (ja) 2022-11-22
JP7803852B2 (ja) 2026-01-21
CN114450366A (zh) 2022-05-06
EP4034606A1 (en) 2022-08-03
EP4034606A4 (en) 2023-10-18
IL291525B2 (en) 2026-04-01
WO2021061591A1 (en) 2021-04-01
CN114450366B (zh) 2024-07-12
US20220372332A1 (en) 2022-11-24
KR20220066937A (ko) 2022-05-24
TW202112990A (zh) 2021-04-01

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