CN114450366B - 平面化中的芯片内不均匀性（wid-nu） - Google Patents

平面化中的芯片内不均匀性（wid-nu） Download PDF

Info

Publication number
CN114450366B
CN114450366B CN202080066800.7A CN202080066800A CN114450366B CN 114450366 B CN114450366 B CN 114450366B CN 202080066800 A CN202080066800 A CN 202080066800A CN 114450366 B CN114450366 B CN 114450366B
Authority
CN
China
Prior art keywords
polishing composition
acid
chemical mechanical
mechanical planarization
combinations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080066800.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN114450366A (zh
Inventor
甘露
J·A·施吕特
D·C·塔姆波利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Versum Materials US LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC
Publication of CN114450366A publication Critical patent/CN114450366A/zh
Application granted granted Critical
Publication of CN114450366B publication Critical patent/CN114450366B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202080066800.7A 2019-09-24 2020-09-22 平面化中的芯片内不均匀性（wid-nu） Active CN114450366B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962904861P 2019-09-24 2019-09-24
US62/904,861 2019-09-24
PCT/US2020/051901 WO2021061591A1 (en) 2019-09-24 2020-09-22 With-in die non-uniformities (wid-nu) in planarization

Publications (2)

Publication Number Publication Date
CN114450366A CN114450366A (zh) 2022-05-06
CN114450366B true CN114450366B (zh) 2024-07-12

Family

ID=75166383

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080066800.7A Active CN114450366B (zh) 2019-09-24 2020-09-22 平面化中的芯片内不均匀性（wid-nu）

Country Status (8)

Country Link
US (1) US20220372332A1 (enExample)
EP (1) EP4034606A4 (enExample)
JP (1) JP7803852B2 (enExample)
KR (1) KR20220066937A (enExample)
CN (1) CN114450366B (enExample)
IL (1) IL291525B2 (enExample)
TW (1) TWI795674B (enExample)
WO (1) WO2021061591A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250171658A1 (en) * 2022-03-14 2025-05-29 Versum Materials Us, Llc Stable Chemical Mechanical Planarization Polishing Compositions And Methods For High Rate Silicon Oxide Removal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107586517A (zh) * 2016-07-01 2018-01-16 弗萨姆材料美国有限责任公司 用于屏障化学机械平面化的添加剂

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
WO2007047454A2 (en) * 2005-10-14 2007-04-26 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
EP2649144A4 (en) 2010-12-10 2014-05-14 Basf Se AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
JP5927059B2 (ja) 2012-06-19 2016-05-25 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた基板の製造方法
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
US9752057B2 (en) * 2014-02-05 2017-09-05 Cabot Microelectronics Corporation CMP method for suppression of titanium nitride and titanium/titanium nitride removal
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
TWI642810B (zh) * 2016-06-07 2018-12-01 美商卡博特微電子公司 用於處理鎳基板表面之化學機械加工漿料及方法
US20190127607A1 (en) * 2017-10-27 2019-05-02 Versum Materials Us, Llc Composite Particles, Method of Refining and Use Thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107586517A (zh) * 2016-07-01 2018-01-16 弗萨姆材料美国有限责任公司 用于屏障化学机械平面化的添加剂

Also Published As

Publication number Publication date
IL291525B1 (en) 2025-12-01
IL291525A (en) 2022-05-01
JP2022548986A (ja) 2022-11-22
JP7803852B2 (ja) 2026-01-21
CN114450366A (zh) 2022-05-06
EP4034606A1 (en) 2022-08-03
EP4034606A4 (en) 2023-10-18
IL291525B2 (en) 2026-04-01
TWI795674B (zh) 2023-03-11
WO2021061591A1 (en) 2021-04-01
US20220372332A1 (en) 2022-11-24
KR20220066937A (ko) 2022-05-24
TW202112990A (zh) 2021-04-01

Similar Documents

Publication Publication Date Title
TWI796520B (zh) 阻絕物漿移除速率改良
JP6023125B2 (ja) 化学的機械的研磨スラリー組成物およびそれを使用した銅のための方法およびシリコン貫通ビア適用
CN102782066B (zh) 含铜、钌和钽层的基材的化学-机械平坦化
CN100408648C (zh) 可选择性阻隔金属的抛光液
JP5329786B2 (ja) 研磨液および半導体装置の製造方法
KR101372208B1 (ko) 요오드산염을 함유하는 화학적-기계적 연마 조성물 및 방법
US7384871B2 (en) Chemical mechanical polishing compositions and methods relating thereto
JP2005123577A (ja) 半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物
EP2093790B1 (en) Low-stain polishing composition
CN101479836A (zh) 利用胶体二氧化硅的氧化硅抛光方法
CN104449396B (zh) 低缺陷化学机械抛光组合物
CN109531282B (zh) 用于钴的化学机械抛光方法
US9496146B2 (en) Method for forming through-base wafer vias
JP5369597B2 (ja) Ｃｍｐ研磨液及び研磨方法
TWI838532B (zh) 研磨液及化學機械研磨方法
CN114450366B (zh) 平面化中的芯片内不均匀性（wid-nu）
CN101121865A (zh) 使用无机氧化物磨料提高铜的平面化的组合物和方法
JP2007180534A (ja) 半導体層を研磨するための組成物
CN117683467A (zh) 适用于集成电路铜互连结构化学机械抛光的抛光组合物及其应用
TWI849125B (zh) 研磨液及化學機械研磨方法
JP2010092968A (ja) 金属用研磨液及びこの金属用研磨液を用いた被研磨膜の研磨方法
TW200535215A (en) Abrasive and polishing method
TW201723113A (zh) 一種用於阻擋層平坦化的化學機械拋光液

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant