JP6321022B2 - 表面活性を失うことなく荷電コロイドの凝集を阻止する方法 - Google Patents
表面活性を失うことなく荷電コロイドの凝集を阻止する方法 Download PDFInfo
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 59
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 59
- 239000000725 suspension Substances 0.000 claims description 54
- 238000005498 polishing Methods 0.000 claims description 40
- 239000004094 surface-active agent Substances 0.000 claims description 34
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 claims description 8
- 229940063953 ammonium lauryl sulfate Drugs 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000003945 anionic surfactant Substances 0.000 claims description 5
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 4
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 4
- 238000010008 shearing Methods 0.000 claims description 4
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 150000005215 alkyl ethers Chemical class 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 239000010954 inorganic particle Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 238000005054 agglomeration Methods 0.000 description 14
- 238000004062 sedimentation Methods 0.000 description 8
- 239000003381 stabilizer Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000000084 colloidal system Substances 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000004931 aggregating effect Effects 0.000 description 2
- 239000007900 aqueous suspension Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
式中、tsは沈降時間であり、ηLは水粘度(0.01ポアズ)であり、αは粒径(μm)であり、gは9.8m/s2であり、ρpはセリア密度(7.1gm/cm3)であり、ρLは水密度(1gm/cm3)であり、dsは沈降距離である。
Claims (12)
- 溶媒と、
前記溶媒中に支持されている複数のセリア粒子であって、前記複数のセリア粒子のそれぞれが、前記セリア粒子の外面上に配置されている負極性を有する表面電荷を含み、前記溶媒が前記複数のセリア粒子のそれぞれの周りに正極性を有する電荷層を形成し、前記正極性を有する電荷層は前記セリア粒子により密に結合したイオンおよび前記セリア粒子により弱く結合した拡散イオンを含む、複数のセリア粒子と、
複数の負極性を有する荷電種であって、前記複数の負極性を有する荷電種の少なくともいくつかが前記正極性を有する電荷層の前記拡散イオンに付着している、複数の負極性を有する荷電種と
を含む、懸濁液における研磨用スラリー。 - 前記複数の負極性を有する荷電種が、界面活性剤、粒子、又は分子を含む、請求項1に記載の懸濁液における研磨用スラリー。
- 前記複数の負極性を有する荷電種のそれぞれが、(i)分岐若しくは直鎖のアルキル又はアルキル−エーテル尾部、及び(ii)サルフェート、スルホネート、ホスフェート、アミン、第四級アンモニウム、又はカルボキシルを含む電荷担持頭部基を含む、請求項1に記載の懸濁液における研磨用スラリー。
- 前記複数の負極性を有する荷電種が、アニオン性界面活性剤を含む、請求項1に記載の懸濁液における研磨用スラリー。
- 基材を研磨するためのシステムであって、
研磨パッドを含む研磨ユニット、及び
前記研磨パッドにスラリーを供給するように操作できるスラリー運搬システムを含み、
前記スラリーが、
溶媒と、
前記溶媒中に支持されている複数のセリア粒子であって、前記複数のセリア粒子のそれぞれが、(i)前記セリア粒子の外面上に分布している負極性を有する表面電荷層、及び(ii)前記複数のセリア粒子のそれぞれの周りの正極性を有する電荷層であって、前記正極性を有する電荷層は前記セリア粒子により密に結合したイオンおよび前記セリア粒子により弱く結合した拡散イオンを含む、複数の固体粒子と、
複数の負極性を有する荷電種であって、前記複数の負極性を有する荷電種の少なくともいくつかが前記正極性を有する電荷層の前記拡散イオンに直接付着している、複数の負極性を有する荷電種と
を含む、システム。 - 前記複数の負極性を有する荷電種が、界面活性剤、粒子、又は分子を含む、請求項5に記載のシステム。
- 前記界面活性剤が、ラウリル硫酸アンモニウム(ALS)、ドデシルベンゼンスルホン酸ナトリウム、又はリン酸エステル類の1つを含む、請求項5に記載のシステム。
- 前記スラリーが、ジルコニア、アルミナ、シリカ系化合物、又は無機粒子の1つをさらに含む、請求項5に記載のシステム。
- 溶媒と、
前記溶媒中に備えられている複数の固体セリア粒子であって、それぞれの固体セリア粒子が電気二重層によって取り囲まれており、前記電気二重層が、
前記セリア粒子の外面に沿って配置されている負極性を有する表面電荷層、及び
前記複数のセリア粒子のそれぞれの周りに形成される正極性を有する電荷層であって、前記正極性を有する電荷層は前記セリア粒子により密に結合したイオンおよび前記セリア粒子により弱く結合した拡散イオンを含む、正極性を有する電荷層
を含む、複数の固体セリア粒子と、
複数の負極性を有する荷電種であって、前記複数の負極性を有する荷電種の少なくともいくつかが前記正極性を有する電荷層の前記拡散イオンに付着している、複数の負極性を有する荷電種と
を含む、スラリー。 - 前記負極性を有する荷電種が、せん断力の適用によって前記正極性を有する電荷層から分離可能である、請求項9に記載のスラリー。
- 前記負極性を有する荷電種が、前記せん断力の除去後に前記正極性を有する電荷層に再付着する、請求項10に記載のスラリー。
- 前記せん断力が、機械的又は電気的であり得る、請求項10に記載のスラリー。
Applications Claiming Priority (3)
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US201261721588P | 2012-11-02 | 2012-11-02 | |
US61/721,588 | 2012-11-02 | ||
PCT/US2013/065290 WO2014070461A1 (en) | 2012-11-02 | 2013-10-16 | Method for preventing agglomeration of charged colloids without loss of surface activity |
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JP2016500747A JP2016500747A (ja) | 2016-01-14 |
JP6321022B2 true JP6321022B2 (ja) | 2018-05-09 |
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US (1) | US10287457B2 (ja) |
EP (2) | EP2914675A4 (ja) |
JP (1) | JP6321022B2 (ja) |
KR (1) | KR102198376B1 (ja) |
WO (1) | WO2014070461A1 (ja) |
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EP2914675A4 (en) | 2012-11-02 | 2016-10-05 | L Livermore Nat Security Llc | METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY |
US10967478B2 (en) * | 2017-09-29 | 2021-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing apparatus and method |
CN115304074B (zh) * | 2022-08-25 | 2023-05-12 | 江西赣锋锂业股份有限公司 | 一种无水四硼酸锂的制备方法 |
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US20100178768A1 (en) | 2007-06-15 | 2010-07-15 | Basf Se | Controlling passivating film properties using colloidal particles, polyelectrolytes, and ionic additives for copper chemical mechanical planarization |
US20090056231A1 (en) * | 2007-08-28 | 2009-03-05 | Daniela White | Copper CMP composition containing ionic polyelectrolyte and method |
DE102008008184A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion |
JP2009267367A (ja) * | 2008-03-31 | 2009-11-12 | Toshiba Corp | 半導体装置の製造方法 |
US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
JP5554121B2 (ja) * | 2010-03-31 | 2014-07-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
RU2610991C2 (ru) | 2011-03-21 | 2017-02-17 | ЛОРЕНС ЛИВЕРМОР НЭШНЛ СЕКЬЮРИТИ, ЭлЭлСи | Способ и система конвергентного полирования |
CN102751187B (zh) * | 2011-04-20 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 抛光方法以及栅极的形成方法 |
EP2914675A4 (en) | 2012-11-02 | 2016-10-05 | L Livermore Nat Security Llc | METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY |
US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
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2013
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- 2013-10-16 JP JP2015540689A patent/JP6321022B2/ja active Active
- 2013-10-16 WO PCT/US2013/065290 patent/WO2014070461A1/en active Application Filing
- 2013-10-16 EP EP20152293.5A patent/EP3666837A1/en active Pending
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JP2016500747A (ja) | 2016-01-14 |
US20150275048A1 (en) | 2015-10-01 |
EP2914675A1 (en) | 2015-09-09 |
KR20150082380A (ko) | 2015-07-15 |
KR102198376B1 (ko) | 2021-01-04 |
WO2014070461A1 (en) | 2014-05-08 |
US10287457B2 (en) | 2019-05-14 |
EP3666837A1 (en) | 2020-06-17 |
EP2914675A4 (en) | 2016-10-05 |
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