JP2016500747A - 表面活性を失うことなく荷電コロイドの凝集を阻止する方法 - Google Patents
表面活性を失うことなく荷電コロイドの凝集を阻止する方法 Download PDFInfo
- Publication number
- JP2016500747A JP2016500747A JP2015540689A JP2015540689A JP2016500747A JP 2016500747 A JP2016500747 A JP 2016500747A JP 2015540689 A JP2015540689 A JP 2015540689A JP 2015540689 A JP2015540689 A JP 2015540689A JP 2016500747 A JP2016500747 A JP 2016500747A
- Authority
- JP
- Japan
- Prior art keywords
- polarity
- charged species
- slurry
- suspension
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002776 aggregation Effects 0.000 title abstract description 23
- 238000000034 method Methods 0.000 title abstract description 16
- 230000000694 effects Effects 0.000 title abstract description 11
- 238000004220 aggregation Methods 0.000 title description 7
- 239000003922 charged colloid Substances 0.000 title 1
- 239000002245 particle Substances 0.000 claims abstract description 150
- 239000002002 slurry Substances 0.000 claims abstract description 85
- 239000000725 suspension Substances 0.000 claims abstract description 61
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 44
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 44
- 238000005498 polishing Methods 0.000 claims description 36
- 239000004094 surface-active agent Substances 0.000 claims description 34
- 239000007787 solid Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000002904 solvent Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 8
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 claims description 8
- 229940063953 ammonium lauryl sulfate Drugs 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000003093 cationic surfactant Substances 0.000 claims description 6
- 239000003945 anionic surfactant Substances 0.000 claims description 5
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 4
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 4
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 150000005215 alkyl ethers Chemical class 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 239000010954 inorganic particle Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 238000005054 agglomeration Methods 0.000 abstract description 16
- 238000001035 drying Methods 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 7
- 239000000084 colloidal system Substances 0.000 abstract description 6
- 230000006641 stabilisation Effects 0.000 abstract description 6
- 238000011105 stabilization Methods 0.000 abstract description 6
- 230000000087 stabilizing effect Effects 0.000 abstract description 4
- 239000007900 aqueous suspension Substances 0.000 abstract description 3
- 230000002427 irreversible effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 18
- 238000004062 sedimentation Methods 0.000 description 8
- 239000003381 stabilizer Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000009739 binding Methods 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000004931 aggregating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 150000002605 large molecules Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000475 sunscreen effect Effects 0.000 description 1
- 239000000516 sunscreening agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
式中、tsは沈降時間であり、ηLは水粘度(0.01ポアズ)であり、αは粒径(μm)であり、gは9.8m/s2であり、ρpはセリア密度(7.1gm/cm3)であり、ρLは水密度(1gm/cm3)であり、dsは沈降距離である。
Claims (20)
- 溶媒と、
前記溶媒中に支持されている複数の固体粒子であって、前記複数の固体粒子のそれぞれが、第1の極性を有し、且つ前記固体粒子の外面上に配置されている第1の電荷層、及び前記第1の電荷層を覆っており、且つ前記第1の極性とは異なる第2の極性を有する第2の電荷層を有する、複数の固体粒子と、
複数の荷電種であって、前記複数の荷電種の少なくともいくつかが前記第2の電荷層に付着しており、前記荷電種が前記第1の極性と同じである荷電極性を有する、複数の荷電種とを含む、懸濁液。 - 前記複数の荷電種が、界面活性剤、粒子、又は分子を含む、請求項1に記載の懸濁液。
- 前記第1の極性がマイナスであり、前記第2の極性がプラスである、請求項1に記載の懸濁液。
- 前記第1の極性がプラスであり、前記第2の極性がマイナスである、請求項1に記載の懸濁液。
- 前記複数の荷電種が、前記第1の電荷層の前記第1の極性に基づくアニオン又はカチオンを含む、請求項1に記載の懸濁液。
- 前記複数の荷電種のそれぞれが、(i)分岐若しくは直鎖のアルキル又はアルキル−エーテル尾部、及び(ii)サルフェート、スルホネート、ホスフェート、アミン、第四級アンモニウム、又はカルボキシルを含む電荷担持頭部基を含む、請求項1に記載の懸濁液。
- 前記複数の荷電種が、前記第1の極性がマイナスの場合にアニオン性界面活性剤を含む、請求項1に記載の懸濁液。
- 前記複数の荷電種が、前記第1の極性がプラスの場合にカチオン性界面活性剤を含む、請求項1に記載の懸濁液。
- 基材を研磨するためのシステムであって、
研磨パッドを含む研磨ユニット、及び
前記研磨パッドにスラリーを供給するように操作できるスラリー運搬システムを含み、
前記スラリーが、
溶媒と、
前記溶媒中に支持されている複数の固体粒子であって、前記複数の固体粒子のそれぞれが、(i)前記固体粒子の外面に近接して配置されており、且つ第1の極性を有する第1の電荷層、及び(ii)前記第1の電荷層を覆っており、且つ前記第1の極性とは逆の第2の極性を有する第2の電荷層を含む、複数の固体粒子と、
前記第2の極性とは逆の第3の極性を有する複数の荷電種であって、前記複数の荷電種の少なくともいくつかが前記第2の電荷層に直接付着している、複数の荷電種と
を含む、システム。 - 前記複数の荷電種が、界面活性剤、粒子、又は分子を含む、請求項9に記載のシステム。
- 前記第3の極性が前記第1の極性と同じであり、前記第1の極性がマイナスである、請求項9に記載のシステム。
- 前記界面活性剤が、ラウリル硫酸アンモニウム(ALS)、ドデシルベンゼンスルホン酸ナトリウム、リン酸エステル類、又は臭化セチルトリメチルアンモニウム(CTAB)の1つを含む、請求項9に記載のシステム。
- 前記複数の荷電種が、カチオン性界面活性剤を含む、請求項9に記載のシステム。
- 前記スラリーが、セリア、ジルコニア、アルミナ、シリカ系化合物、又は無機粒子の1つを含む、請求項13に記載のシステム。
- 溶媒と、
前記溶媒中に備えられている複数の固体セリア粒子であって、それぞれの固体セリア粒子が電気二重層によって取り囲まれており、前記電気二重層が、
前記セリア粒子の外面に沿って配置されており、第1の極性を有する第1の電荷層、及び
前記第1の電荷層上に配置されており、第2の極性を有する第2の電荷層
を含む、複数の固体セリア粒子と、
複数のカチオンを含む複数の荷電種であって、前記複数のカチオンの少なくともいくつかが、前記セリア粒子の前記第2の電荷層に付着している、複数の荷電種と
を含む、スラリー。 - 前記第1の極性が、前記第2の極性とは逆である、請求項15に記載のスラリー。
- 前記第2の極性が、プラスである、請求項16に記載のスラリー。
- 前記カチオンが、せん断力の適用によって前記第2の電荷層から分離可能である、請求項16に記載のスラリー。
- 前記カチオンが、前記せん断力の除去後に前記第2の電荷層に再付着する、請求項18に記載のスラリー。
- 前記せん断力が、機械的又は電気的であり得る、請求項18に記載のスラリー。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261721588P | 2012-11-02 | 2012-11-02 | |
US61/721,588 | 2012-11-02 | ||
PCT/US2013/065290 WO2014070461A1 (en) | 2012-11-02 | 2013-10-16 | Method for preventing agglomeration of charged colloids without loss of surface activity |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016500747A true JP2016500747A (ja) | 2016-01-14 |
JP6321022B2 JP6321022B2 (ja) | 2018-05-09 |
Family
ID=50627939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015540689A Active JP6321022B2 (ja) | 2012-11-02 | 2013-10-16 | 表面活性を失うことなく荷電コロイドの凝集を阻止する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10287457B2 (ja) |
EP (2) | EP3666837A1 (ja) |
JP (1) | JP6321022B2 (ja) |
KR (1) | KR102198376B1 (ja) |
WO (1) | WO2014070461A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10287457B2 (en) | 2012-11-02 | 2019-05-14 | Lawrence Livermore National Security, Llc | Polishing slurry preventing agglomeration of charged colloids without loss of surface activity |
US10967478B2 (en) * | 2017-09-29 | 2021-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing apparatus and method |
CN115304074B (zh) * | 2022-08-25 | 2023-05-12 | 江西赣锋锂业股份有限公司 | 一种无水四硼酸锂的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08257898A (ja) * | 1995-03-29 | 1996-10-08 | Tokyo Jiki Insatsu Kk | 分散/凝集状態を制御した遊離砥粒スラリー、その製造法及びその分散方法 |
JP2000269169A (ja) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | 半導体装置の製造方法及び埋め込み配線の形成方法 |
JP2001009702A (ja) * | 1999-06-28 | 2001-01-16 | Toshiba Corp | Cmp研磨方法及び半導体製造装置 |
JP2008201984A (ja) * | 2007-02-22 | 2008-09-04 | Kyowa Chem Ind Co Ltd | 懸濁安定性を有する懸濁液組成物 |
JP2010538457A (ja) * | 2007-08-28 | 2010-12-09 | キャボット マイクロエレクトロニクス コーポレイション | イオン性高分子電解質を含有する銅cmp組成物及び方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
KR100447552B1 (ko) * | 1999-03-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법 |
KR20020035826A (ko) * | 1999-07-03 | 2002-05-15 | 갤반 마틴 | 금속용의 개선된 화학기계적 연마 슬러리 |
US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
US7887714B2 (en) * | 2000-12-25 | 2011-02-15 | Nissan Chemical Industries, Ltd. | Cerium oxide sol and abrasive |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
ATE455367T1 (de) * | 2002-07-22 | 2010-01-15 | Seimi Chem Kk | Halbleiterschleif prozess zu seiner herstellung und polierverfahren |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
US20050287931A1 (en) * | 2002-10-25 | 2005-12-29 | Showa Denko K.K. | Polishing slurry and polished substrate |
JP3860528B2 (ja) * | 2002-11-12 | 2006-12-20 | 株式会社東芝 | 半導体装置の製造方法 |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US7150996B2 (en) * | 2003-06-18 | 2006-12-19 | Stable Solutions, Inc. | Stability assessment of dispersions and emulsions |
JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
KR100564580B1 (ko) * | 2003-10-06 | 2006-03-29 | 삼성전자주식회사 | 산화막 평탄화 방법 및 이를 이용한 반도체 소자의 제조방법 |
US7427361B2 (en) * | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
JP4292117B2 (ja) | 2004-07-15 | 2009-07-08 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
US7368388B2 (en) * | 2005-04-15 | 2008-05-06 | Small Robert J | Cerium oxide abrasives for chemical mechanical polishing |
JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
US7842193B2 (en) * | 2005-09-29 | 2010-11-30 | Fujifilm Corporation | Polishing liquid |
KR20090031571A (ko) * | 2006-07-18 | 2009-03-26 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체, 그의 제조 방법 및 화학 기계 연마 방법 |
KR100800481B1 (ko) * | 2006-08-16 | 2008-02-04 | 삼성전자주식회사 | 화학기계적 연마방법 및 이를 이용한 소자 분리막 형성방법 |
KR100852242B1 (ko) * | 2006-08-16 | 2008-08-13 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물, 이를 이용한 연마 방법및 반도체 메모리 소자의 제조 방법 |
CN101536171A (zh) | 2006-11-08 | 2009-09-16 | 圣劳伦斯纳米科技有限公司 | 湿敏表面的化学机械抛光和为此的组合物 |
JP4372173B2 (ja) * | 2007-03-16 | 2009-11-25 | 株式会社東芝 | 化学的機械的研磨方法および半導体装置の製造方法 |
WO2008157293A1 (en) * | 2007-06-15 | 2008-12-24 | Basf Se | Controlling passivating film properties using colloidal particles polyelectrolytes, and ionic additives for copper chemical mechanical planarization |
DE102008008184A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion |
JP2009267367A (ja) * | 2008-03-31 | 2009-11-12 | Toshiba Corp | 半導体装置の製造方法 |
US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
JP5554121B2 (ja) * | 2010-03-31 | 2014-07-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
CN103534062A (zh) | 2011-03-21 | 2014-01-22 | 劳伦斯利弗摩尔国际安全有限责任公司 | 用于会聚抛光的方法和系统 |
CN102751187B (zh) * | 2011-04-20 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 抛光方法以及栅极的形成方法 |
US10287457B2 (en) | 2012-11-02 | 2019-05-14 | Lawrence Livermore National Security, Llc | Polishing slurry preventing agglomeration of charged colloids without loss of surface activity |
US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
-
2013
- 2013-10-16 US US14/437,453 patent/US10287457B2/en active Active
- 2013-10-16 EP EP20152293.5A patent/EP3666837A1/en active Pending
- 2013-10-16 KR KR1020157014262A patent/KR102198376B1/ko active IP Right Grant
- 2013-10-16 WO PCT/US2013/065290 patent/WO2014070461A1/en active Application Filing
- 2013-10-16 EP EP13850914.6A patent/EP2914675A4/en not_active Withdrawn
- 2013-10-16 JP JP2015540689A patent/JP6321022B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08257898A (ja) * | 1995-03-29 | 1996-10-08 | Tokyo Jiki Insatsu Kk | 分散/凝集状態を制御した遊離砥粒スラリー、その製造法及びその分散方法 |
JP2000269169A (ja) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | 半導体装置の製造方法及び埋め込み配線の形成方法 |
JP2001009702A (ja) * | 1999-06-28 | 2001-01-16 | Toshiba Corp | Cmp研磨方法及び半導体製造装置 |
JP2008201984A (ja) * | 2007-02-22 | 2008-09-04 | Kyowa Chem Ind Co Ltd | 懸濁安定性を有する懸濁液組成物 |
JP2010538457A (ja) * | 2007-08-28 | 2010-12-09 | キャボット マイクロエレクトロニクス コーポレイション | イオン性高分子電解質を含有する銅cmp組成物及び方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2914675A1 (en) | 2015-09-09 |
US20150275048A1 (en) | 2015-10-01 |
EP2914675A4 (en) | 2016-10-05 |
KR20150082380A (ko) | 2015-07-15 |
US10287457B2 (en) | 2019-05-14 |
KR102198376B1 (ko) | 2021-01-04 |
JP6321022B2 (ja) | 2018-05-09 |
EP3666837A1 (en) | 2020-06-17 |
WO2014070461A1 (en) | 2014-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6321022B2 (ja) | 表面活性を失うことなく荷電コロイドの凝集を阻止する方法 | |
Wang et al. | Retention and transport of silica nanoparticles in saturated porous media: effect of concentration and particle size | |
Gao et al. | Probing anisotropic surface properties and surface forces of fluorite crystals | |
Jain et al. | Stable and water-tolerant ionic liquid ferrofluids | |
Tamura et al. | Modeling of ion-exchange reactions on metal oxides with the Frumkin isotherm. 1. Acid− base and charge characteristics of MnO2, TiO2, Fe3O4, and Al2O3 surfaces and adsorption affinity of alkali metal ions | |
Trefalt et al. | Interaction forces, heteroaggregation, and deposition involving charged colloidal particles | |
Tong et al. | Funneling of flow into grain-to-grain contacts drives colloid− colloid aggregation in the presence of an energy barrier | |
TW201605737A (zh) | 銀微粒子分散體、銀微粒子及其製造方法以及接合用組成物 | |
CA2400724A1 (en) | Porous ferro- or ferrimagnetic glass particles for isolating molecules | |
Iijima et al. | Layer-by-layer surface modification of functional nanoparticles for dispersion in organic solvents | |
Ron et al. | How nanoscale surface heterogeneity impacts transport of nano-to micro-particles on surfaces under unfavorable attachment conditions | |
Dylla-Spears et al. | Charged micelle halo mechanism for agglomeration reduction in metal oxide particle based polishing slurries | |
JP2021151944A (ja) | シリカ粒子及びその製造方法 | |
Preocanin et al. | Charging behavior of clays and clay minerals in aqueous electrolyte solutions—experimental methods for measuring the charge and interpreting the results | |
Li et al. | Nanoparticle tracers in calcium carbonate porous media | |
AlMashrea et al. | Polyaniline coated gold-aryl nanoparticles: Electrochemical synthesis and efficiency in methylene blue dye removal | |
Ma et al. | Deposition of engineered nanoparticles (ENPs) on surfaces in aquatic systems: a review of interaction forces, experimental approaches, and influencing factors | |
JP2010503756A (ja) | 静電気拡散性物品 | |
CN108602015B (zh) | 使用金属胶体微粒的稳定悬浮液净化热力发动机的流体、以及制造所述流体的方法 | |
Kamburova et al. | Polyelectrolyte-modified kaolinite nanocontainers for entrapment of corrosion inhibitor benzotriazole | |
US11866340B2 (en) | Silica particle and method for producing the same | |
KR102067819B1 (ko) | 나노 구조체의 안정화 방법 | |
Osseo-Asare et al. | Chemical-mechanical polishing of tungsten: an electrophoretic mobility investigation of alumina-tungstate interactions | |
Volkova et al. | Effect of Magnetite Content and Specificity of Nickel (II) Ions on Electrokinetic Properties of Composites Based on Porous Silica Particles | |
CN109456732A (zh) | 一种金刚石磁性聚集磨料的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20160122 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20160122 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20160210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20160210 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160928 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180404 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6321022 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |