JP2010538457A - イオン性高分子電解質を含有する銅cmp組成物及び方法 - Google Patents
イオン性高分子電解質を含有する銅cmp組成物及び方法 Download PDFInfo
- Publication number
- JP2010538457A JP2010538457A JP2010522907A JP2010522907A JP2010538457A JP 2010538457 A JP2010538457 A JP 2010538457A JP 2010522907 A JP2010522907 A JP 2010522907A JP 2010522907 A JP2010522907 A JP 2010522907A JP 2010538457 A JP2010538457 A JP 2010538457A
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- JP
- Japan
- Prior art keywords
- composition
- polyelectrolyte
- copper
- complexing agent
- cmp
- Prior art date
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- Granted
Links
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
本発明のCMP組成物は、1質量パーセントの過酸化水素の存在下で4インチ径の銅ブランケットウエハを研磨するために利用された。2つの組成物は、0.1質量パーセントのコロイダルシリカ研磨剤(60nmの平均粒子サイズ)、15,000g/molの重量平均分子量を有する100ppmのポリ(マドクアット)を含み、さらに0.05か0.5質量パーセントのグリシンが併用された。他の2つの組成物は0.1質量パーセントの二酸化チタン及び100ppmのポリ(マドクアット)を含み、さらに0.05か1質量パーセントのグリシンが併用された。比較例を、研磨剤だけと、研磨剤と高分子電解質(グリシンを含まない)と、さらに研磨剤とグリシン(高分子電解質を含まない)とを含有する組成物とした。各々の組成物はpH5を有した。ウエハは、次の作業条件下でLogitech Model II CDP(イギリス、Glasgow、Logitech Ltd.製)上で研磨した。作業条件は、DlOO研磨パッド、80回毎分(rpm)のプラテンスピード、75rpmのキャリアスピード、3ポンド毎平方インチ(psi)のダウンフォース、及び200ミリリッター毎分(mL/min)のスラリー流速であった。
本発明のCMP組成物は4インチ径の銅ブランケットウエハを研磨するために利用された。その組成物は、0.1質量パーセントのコロイダルシリカ研磨剤(60nmの平均粒子サイズ)、200,000g/molの重量平均分子量を有して60:40のPAAのPAMに対するモル比を有する100〜1000ppmのPAA-PAMコポリマーを含み、さらに1質量パーセントのIDAが併用された。ウエハは、0.8〜1.6質量パーセントの範囲の様々な濃度の過酸化水素の存在下であって、5〜7の範囲のpHであって、さらに次の作業条件下でLogitech Model II CDP(イギリス、Glasgow、Logitech Ltd.製)上で研磨した。作業条件は、DlOO研磨パッド、80rpmのプラテンスピード、75rpmのキャリアスピード、3psiのダウンフォース、及び200mL/minのスラリー流速であった。
本発明のCMP組成物は、4インチ径の銅ブランケットウエハを研磨するために利用された。その組成物は、0.1質量パーセントのコロイダルシリカ研磨剤(60nmの平均粒子サイズ)、1000ppmのDISPERBYKTM191、及び0.1質量パーセントのシリコーングリコールコポリマーの非イオン性界面活性剤(SILWETTML7604、Connecticut、Danbury、OSi Specialties、報告によれば5〜8の範囲のHLBを有する。)を含み、さらに、1質量パーセントのIDAが併用された。ウエハは、0.8質量パーセントの過酸化水素又は0.1質量パーセントの過ヨウ素酸の存在下であって、pH7で、さらに次の作業条件下でLogitech Model II CDP(イギリス、Glasgow、Logitech Ltd.製)上で研磨した。作業条件は、DlOO研磨パッド、80rpmのプラテンスピード、75rpmのキャリアスピード、1psi又は3psiのダウンフォース、及び150mL/minのスラリー流速であった。各々の場合において、1psiダウンフォースの銅除去速度は1200Å/minであり、3psiダウンフォースの銅除去速度は3200Å/minであった。その組成物に対するスタチックエッチング速度は各々の酸化剤について18Å/minであった。
Claims (25)
- 銅含有基材を研磨するための化学機械研磨(CMP)組成物であって、該組成物が、
(a)1質量パーセント以下の粒子状研磨剤、
(b)高分子電解質、
(c)銅錯化剤、及び
(d)水性キャリア、
を含む、組成物。 - 前記高分子電解質が少なくとも10,000グラム-パー-モル(g/mol)の重量平均分子量を有する、請求項1に記載の組成物。
- 前記高分子電解質がアニオン性又は両性ポリマーを含む、請求項1に記載の組成物。
- 前記高分子電解質がアクリル酸のポリマー又はコポリマーを含む、請求項1に記載の組成物。
- 前記銅錯化剤がアミノポリカルボキシレートを含む、請求項1に記載の組成物。
- 前記高分子電解質がカチオン性ポリマーを含む、請求項1に記載の組成物。
- 前記銅錯化剤がアミノ酸を含む、請求項1に記載の組成物。
- 前記高分子電解質が50から1000ppmの範囲の濃度で前記組成物中に存在する、請求項1に記載の組成物。
- 前記銅錯化剤が0.5から1.5質量パーセントの範囲の濃度で前記組成物中に存在する、請求項1に記載の組成物。
- 粒子状研磨剤が100nm以下の平均粒子サイズを有する、請求項1に記載の組成物。
- 粒子状研磨剤が二酸化チタン及び二酸化ケイ素からなる群から選ばれる少なくとも一つの金属酸化物を含む、請求項1に記載の組成物。
- 銅含有基材を研磨するための化学機械研磨(CMP)組成物であって、該組成物が、
(a)100nm以下の平均粒子サイズを有する1質量パーセント以下の粒子状研磨剤、
(b)100から1000ppmのアニオン性又は両性高分子電解質、
(c)0.5から1.5質量パーセントのアミノポリカルボキシレート銅錯化剤、及び
(d)水性キャリア、
を含む、組成物。 - 前記高分子電解質が少なくとも50,000グラム-パー-モル(g/mol)の重量平均分子量を有する、請求項12に記載の組成物。
- 前記高分子電解質がアクリル酸のポリマー又はコポリマーを含む、請求項12に記載の組成物。
- 前記高分子電解質がアクリル酸とアクリルアミドのコポリマーを含む、請求項12に記載の組成物。
- 前記アミノポリカルボキシレートがイミノ二酢酸又はその塩を含む、請求項12に記載の組成物。
- 前記粒子状研磨剤が二酸化チタン及び二酸化ケイ素からなる群から選ばれる少なくとも一つの金属酸化物を含む、請求項12に記載の組成物。
- 銅含有基材を研磨するための化学機械研磨(CMP)組成物であって、該組成物が、
(a)100nm以下の平均粒子サイズを有する1質量パーセント以下の粒子状研磨剤、
(b)10から150ppmのカチオン性高分子電解質、
(c)0.5から1.5質量パーセントのアミノ酸銅錯化剤、及び
(d)水性キャリア、
を含む、組成物。 - 前記高分子電解質が少なくとも15,000グラム-パー-モル(g/mol)の重量平均分子量を有する、請求項18に記載の組成物。
- 前記カチオン性高分子電解質がポリ(2-[(メタクリロイルオキシ)エチル]トリメチル塩化アンモニウム)を含む、請求項18に記載の組成物。
- 前記アミノ酸がグリシンを含む、請求項18に記載の組成物。
- 前記粒子状研磨剤が二酸化チタン及び二酸化ケイ素からなる群から選ばれる少なくとも一つの金属酸化物を含む、請求項18に記載の組成物。
- 銅含有基材を研磨する方法であって、該方法が、請求項1に記載のCMP組成物で該基材の表面を摩耗させること含み、適宜、酸化剤の存在下で摩耗させることを含む、方法。
- 前記CMP組成物が、100から1000ppmの高分子電解質及び0.5から1.5質量パーセントの銅錯化剤を含み、並びに該高分子電解質がアニオン性又は両性ポリマーを含み、さらに該銅錯化剤がアミノポリカルボキシレート化合物を含む、請求項23に記載の方法。
- 前記CMP組成物が、10から150ppmの高分子電解質及び0.5から1.5質量パーセントの銅錯化剤を含み、並びに該高分子電解質がカチオン性ポリマーを含み、さらに該銅錯化剤がアミノ酸を含む、請求項23に記載の方法。
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US11/895,896 US20090056231A1 (en) | 2007-08-28 | 2007-08-28 | Copper CMP composition containing ionic polyelectrolyte and method |
US11/895,896 | 2007-08-28 | ||
PCT/US2008/009852 WO2009032065A1 (en) | 2007-08-28 | 2008-08-19 | Copper cmp composition containing ionic polyelectrolyte and method |
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EP (1) | EP2190947A4 (ja) |
JP (1) | JP5960386B2 (ja) |
KR (1) | KR101305840B1 (ja) |
CN (1) | CN101796160B (ja) |
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Also Published As
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EP2190947A4 (en) | 2013-04-24 |
KR20100065341A (ko) | 2010-06-16 |
KR101305840B1 (ko) | 2013-09-23 |
JP5960386B2 (ja) | 2016-08-02 |
WO2009032065A1 (en) | 2009-03-12 |
SG183780A1 (en) | 2012-09-27 |
CN101796160A (zh) | 2010-08-04 |
US20090056231A1 (en) | 2009-03-05 |
TWI434918B (zh) | 2014-04-21 |
TW200927897A (en) | 2009-07-01 |
EP2190947A1 (en) | 2010-06-02 |
CN101796160B (zh) | 2013-07-31 |
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