JP2005513765A - ポリマー性錯体形成剤を使用する銅cmpのための方法 - Google Patents
ポリマー性錯体形成剤を使用する銅cmpのための方法 Download PDFInfo
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- JP2005513765A JP2005513765A JP2003551828A JP2003551828A JP2005513765A JP 2005513765 A JP2005513765 A JP 2005513765A JP 2003551828 A JP2003551828 A JP 2003551828A JP 2003551828 A JP2003551828 A JP 2003551828A JP 2005513765 A JP2005513765 A JP 2005513765A
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- acid
- polishing
- abrasive
- substrate
- copolymer
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- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical class [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical class [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- PBSASXNAZJHOBR-UHFFFAOYSA-N n-(2-methylpropyl)prop-2-enamide Chemical compound CC(C)CNC(=O)C=C PBSASXNAZJHOBR-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000012285 osmium tetroxide Substances 0.000 description 1
- 229910000489 osmium tetroxide Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002924 oxiranes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229920002502 poly(methyl methacrylate-co-methacrylic acid) Polymers 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical group O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical group 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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Abstract
Description
この例は、本発明によるポリマー被覆研磨材粒子の製造方法を説明する。
この例は、非ポリマー有機酸の存在下でのポリマー被覆粒子研磨材のコロイド安定性を説明する。
この例は、研磨材粒子上にポリマー被覆の存在することが基材の除去速度と選択性を改善することを説明する。
この例は、負に帯電したポリマー又はコポリマーで被覆した研磨材粒子の研磨有効性を説明する。
この例は、負に帯電したポリマー又はコポリマーで被覆したコロイド的に安定な研磨材粒子とコロイド的に安定でない非被覆研磨材粒子が表面欠陥に及ぼす効果を比較する。
この例は、負に帯電したポリマー又はコポリマーで被覆した研磨材粒子を含むCMP系を使用した基材除去速度を、被覆していない負に帯電した研磨材粒子を含む従来のCMP系と比較する。
この例は、ポリマー性錯体形成剤で被覆した研磨材粒子を用いるCMP中に達成される、表面粗さと引っかきのレベルを評価する。
この例は、CMP系で研磨した基材表面上の表面欠陥の数に関して、CMP系中の有機酸に対するポリマー性錯体形成剤の相対量が重要であることを説明する。
この例は、銅含有基材のCMP後に記録したディッシング値に及ぼす異なるカルボン酸含有ポリマー性錯体形成剤の効果を説明する。
この例は、CMP系で研磨した基材からの銅の除去速度に及ぼすCMP系中のポリマー性錯体形成剤の分子量の効果を説明する。
この例は、CMP系で研磨した基材表面の表面欠陥の数に関して、CMP系のポリマー性錯体形成剤とともに使用する非ポリマー性有機酸の種類が重要であることを説明する。
この例は、CMP系で研磨した基材表面の銅のディッシングと酸化物の侵食に関して、CMP系に非イオン界面活性剤の存在することが重要であることを説明する。
Claims (30)
- 銅を含む金属層を含む基材を研磨する方法であって、
(i)次の(a)〜(d)、すなわち、
(a)液体キャリアー、
(b)研磨パッド、
(c)研磨材、及び
(d)負に帯電したポリマー又はコポリマーであって、(I)スルホン酸、スルホネート、スルフェート、ホスホン酸、ホスホネート、及びホスフェートよりなる群から選択される1つ以上のモノマーを含み、(ii)20,000g/mol以上の分子量を有し、且つ(iii)上記研磨材が当該負に帯電したポリマー又はコポリマーと上記研磨材との相互作用により低下するゼータ電位の値を有するように、上記研磨材の少なくとも一部を被覆する、負に帯電したポリマー又はコポリマー、
を含む化学機械的研磨系を用意する工程、
(ii)銅を含む金属層を含む基材をこの化学機械的研磨系と接触させる工程、及び、
(iii)当該基材の少なくとも一部を摩滅させて当該基材の金属層を研磨する工程、を含む基材研磨方法。 - 前記負に帯電したポリマー又はコポリマーの分子量が40,000g/mol〜50,000g/molである、請求項1記載の方法。
- 前記負に帯電したポリマー又はコポリマーが、スチレンスルホン酸、ビニルスルホン酸、2−アクリルアミド−2−メチルプロパンスルホン酸、及びビニルホスホン酸よりなる群から選択される1つ以上のモノマーを含む、請求項1記載の方法。
- 前記負に帯電したポリマー又はコポリマーが、ポリスチレンスルホン酸、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)、及びそれらのコポリマーよりなる群から選択される、請求項3記載の方法。
- 前記負に帯電したポリマー又はコポリマーがアニオン性モノマーと非イオン性モノマーの混合物を含む、請求項1記載の方法。
- 前記研磨材が、アルミナ、シリカ、チタニア、セリア、ジルコニア、ゲルマニア、マグネシア、それらの同時形成生成物、及びそれらの組み合わせよりなる群から選択される金属酸化物である、請求項1記載の方法。
- 前記金属酸化物がアルミナである、請求項6記載の方法。
- 前記研磨材を前記研磨パッド上に固定する、請求項1記載の方法。
- 前記研磨材が粒子状であり、且つ前記液体キャリアーに懸濁されている、請求項1記載の方法。
- 前記液体キャリアー及びそれに溶解又は懸濁した全ての成分の重量に基づき、前記研磨材の量が2wt%以下であり、前記負に帯電したポリマー又はコポリマーの量が0.2wt%以下である、請求項9記載の方法。
- 前記系のpHが7以下である、請求項1記載の方法。
- 前記pHが2〜6である、請求項11記載の方法。
- 前記系がカルボン酸又はカルボキシレートモノマーを含むポリマー性錯体形成剤を更に含む、請求項1記載の方法。
- 前記ポリマー性錯体形成剤の分子量が10,000g/mol以上である、請求項13記載の方法。
- 前記系が有機酸を更に含む、請求項1記載の方法。
- 前記有機酸がカルボン酸である、請求項15記載の方法。
- 前記カルボン酸が、乳酸、プロピオン酸、2−ヒドロキシ酪酸、3−ヒドロキシ酪酸、2−メチル乳酸、それらの塩、及びそれらの組み合わせよりなる群から選択されるモノカルボン酸である、請求項16記載の方法。
- 前記系が有機酸を更に含む、請求項13記載の方法。
- 前記有機酸が、乳酸、プロピオン酸、2−ヒドロキシ酪酸、3−ヒドロキシ酪酸、2−メチル乳酸、それらの塩、及びそれらの組み合わせよりなる群から選択されるカルボン酸である、請求項18記載の方法。
- 前記カルボン酸の量が、重量ベースで前記ポリマー性錯体形成剤の量の90%以下である、請求項19記載の方法。
- 前記カルボン酸の量が、重量ベースで前記ポリマー性錯体形成剤の量の80%以下である、請求項20記載の方法。
- 前記カルボン酸の量が、重量ベースで前記ポリマー性錯体形成剤の量の70%以下である、請求項21記載の方法。
- 前記カルボン酸の量が、重量ベースで前記ポリマー性錯体形成剤の量の10%以上である、請求項19記載の方法。
- 前記系が、酸化剤、腐食防止剤、pH調整剤、及び界面活性剤よりなる群から選択される1つ以上の成分を更に含む、請求項1記載の方法。
- 前記系が酸化剤を含み、当該酸化剤が過酸化物である、請求項24記載の方法。
- 前記系が腐食防止剤を含み、当該腐食防止剤がベンゾトリアゾールである、請求項24記載の方法。
- 前記系が界面活性剤を含み、当該界面活性剤が非イオン界面活性剤である、請求項24記載の方法。
- 前記基材がタンタルを含む金属層を更に含む、請求項1記載の方法。
- 前記基材が絶縁層を更に含む、請求項1記載の方法。
- 前記系が、前記液体キャリアーとそれに溶解又は懸濁した全ての成分の重量に基づき、0.5wt%の研磨材、0.05wt%の負に帯電したポリマー又はコポリマー、1wt%のポリマー性錯体形成剤、及び0.7wt%の有機酸を含む、請求項18記載の方法。
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US10/246,280 US6821897B2 (en) | 2001-12-05 | 2002-09-18 | Method for copper CMP using polymeric complexing agents |
PCT/US2002/041453 WO2003050864A2 (en) | 2001-12-05 | 2002-12-03 | Method for copper cmp using polymeric complexing agents |
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JP (1) | JP4629337B2 (ja) |
CN (1) | CN100336188C (ja) |
AU (1) | AU2002364970A1 (ja) |
TW (1) | TWI276672B (ja) |
WO (1) | WO2003050864A2 (ja) |
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Also Published As
Publication number | Publication date |
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EP1451863B1 (en) | 2012-08-29 |
CN100336188C (zh) | 2007-09-05 |
TWI276672B (en) | 2007-03-21 |
CN1599951A (zh) | 2005-03-23 |
US6821897B2 (en) | 2004-11-23 |
WO2003050864A3 (en) | 2003-09-12 |
JP4629337B2 (ja) | 2011-02-09 |
EP1451863A2 (en) | 2004-09-01 |
TW200300787A (en) | 2003-06-16 |
WO2003050864A2 (en) | 2003-06-19 |
AU2002364970A1 (en) | 2003-06-23 |
US20030124959A1 (en) | 2003-07-03 |
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