WO2009017095A1 - 金属用研磨液及び研磨方法 - Google Patents

金属用研磨液及び研磨方法 Download PDF

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Publication number
WO2009017095A1
WO2009017095A1 PCT/JP2008/063535 JP2008063535W WO2009017095A1 WO 2009017095 A1 WO2009017095 A1 WO 2009017095A1 JP 2008063535 W JP2008063535 W JP 2008063535W WO 2009017095 A1 WO2009017095 A1 WO 2009017095A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
metal
polishing liquid
metals
functional group
Prior art date
Application number
PCT/JP2008/063535
Other languages
English (en)
French (fr)
Inventor
Yutaka Nomura
Masato Fukasawa
Hiroshi Nakagawa
Original Assignee
Hitachi Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co., Ltd. filed Critical Hitachi Chemical Co., Ltd.
Priority to US12/670,292 priority Critical patent/US8288282B2/en
Priority to JP2009525396A priority patent/JP5327050B2/ja
Publication of WO2009017095A1 publication Critical patent/WO2009017095A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　酸化金属溶解剤、金属の酸化剤、金属防食剤、重量平均分子量が８，０００以上のアニオン性官能基及びノニオン性官能基を有する水溶性ポリマ及び水を含有し、ｐＨが２．５以上５．０以下である金属用研磨液とし、ＣＭＰ中に生じる研磨摩擦力を低下させると共に、被研磨面の平坦性に優れる金属用研磨液を提供する。
PCT/JP2008/063535 2007-07-30 2008-07-28 金属用研磨液及び研磨方法 WO2009017095A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/670,292 US8288282B2 (en) 2007-07-30 2008-07-28 Polishing liquid for metal and method of polishing
JP2009525396A JP5327050B2 (ja) 2007-07-30 2008-07-28 金属用研磨液及び研磨方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-197349 2007-07-30
JP2007197349 2007-07-30

Publications (1)

Publication Number Publication Date
WO2009017095A1 true WO2009017095A1 (ja) 2009-02-05

Family

ID=40304325

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063535 WO2009017095A1 (ja) 2007-07-30 2008-07-28 金属用研磨液及び研磨方法

Country Status (5)

Country Link
US (1) US8288282B2 (ja)
JP (1) JP5327050B2 (ja)
KR (1) KR101472617B1 (ja)
TW (1) TWI382106B (ja)
WO (1) WO2009017095A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011020208A (ja) * 2009-07-15 2011-02-03 Hitachi Chem Co Ltd Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
JP2015171748A (ja) * 2014-03-12 2015-10-01 株式会社ディスコ 加工方法
JP2016029123A (ja) * 2014-07-25 2016-03-03 旭硝子株式会社 研磨剤と研磨方法、および研磨用添加液
WO2017204035A1 (ja) * 2016-05-26 2017-11-30 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法
JP2019087660A (ja) * 2017-11-08 2019-06-06 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP2020002356A (ja) * 2018-06-28 2020-01-09 ケーシーテック カンパニー リミテッド 研磨用スラリー組成物

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* Cited by examiner, † Cited by third party
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WO2010092865A1 (ja) 2009-02-16 2010-08-19 日立化成工業株式会社 研磨剤及び研磨方法
SG196817A1 (en) * 2009-02-16 2014-02-13 Hitachi Chemical Co Ltd Polishing agent for copper polishing and polishing method using same
JP2014027012A (ja) * 2012-07-24 2014-02-06 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
MA35300B1 (fr) * 2013-01-18 2014-08-01 Univ Hassan 1Er Settat Optimisation des phosphates pour les traitements de surface et les opérations de polissage
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
KR101682085B1 (ko) 2015-07-09 2016-12-02 주식회사 케이씨텍 텅스텐 연마용 슬러리 조성물
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
KR20200032601A (ko) * 2018-09-18 2020-03-26 주식회사 케이씨텍 연마용 슬러리 조성물

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JP2000323444A (ja) * 1999-05-10 2000-11-24 Kao Corp 研磨液組成物
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2005217396A (ja) * 2003-12-22 2005-08-11 Rohm & Haas Electronic Materials Cmp Holdings Inc 銅の低ダウンフォース圧力研磨のための組成物及び方法
WO2007069488A1 (ja) * 2005-12-16 2007-06-21 Jsr Corporation 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
WO2007077886A1 (ja) * 2005-12-27 2007-07-12 Hitachi Chemical Co., Ltd. 金属用研磨液及び被研磨膜の研磨方法

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US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
TW476777B (en) * 1998-08-31 2002-02-21 Hitachi Chemical Co Ltd Abrasive liquid for metal and method for polishing
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
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JP2000323444A (ja) * 1999-05-10 2000-11-24 Kao Corp 研磨液組成物
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2005217396A (ja) * 2003-12-22 2005-08-11 Rohm & Haas Electronic Materials Cmp Holdings Inc 銅の低ダウンフォース圧力研磨のための組成物及び方法
WO2007069488A1 (ja) * 2005-12-16 2007-06-21 Jsr Corporation 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
WO2007077886A1 (ja) * 2005-12-27 2007-07-12 Hitachi Chemical Co., Ltd. 金属用研磨液及び被研磨膜の研磨方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011020208A (ja) * 2009-07-15 2011-02-03 Hitachi Chem Co Ltd Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
JP2015171748A (ja) * 2014-03-12 2015-10-01 株式会社ディスコ 加工方法
JP2016029123A (ja) * 2014-07-25 2016-03-03 旭硝子株式会社 研磨剤と研磨方法、および研磨用添加液
WO2017204035A1 (ja) * 2016-05-26 2017-11-30 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法
JPWO2017204035A1 (ja) * 2016-05-26 2019-04-25 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法
JP2019087660A (ja) * 2017-11-08 2019-06-06 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP7187770B2 (ja) 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP2020002356A (ja) * 2018-06-28 2020-01-09 ケーシーテック カンパニー リミテッド 研磨用スラリー組成物
US11279851B2 (en) 2018-06-28 2022-03-22 Kctech Co., Ltd. Polishing slurry composition

Also Published As

Publication number Publication date
US20100197201A1 (en) 2010-08-05
KR101472617B1 (ko) 2014-12-15
TW200916608A (en) 2009-04-16
JP5327050B2 (ja) 2013-10-30
JPWO2009017095A1 (ja) 2010-10-21
KR20100065304A (ko) 2010-06-16
TWI382106B (zh) 2013-01-11
US8288282B2 (en) 2012-10-16

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