JP2020536386A - タングステンバフ用途のための表面処理研削粒子 - Google Patents
タングステンバフ用途のための表面処理研削粒子 Download PDFInfo
- Publication number
- JP2020536386A JP2020536386A JP2020519089A JP2020519089A JP2020536386A JP 2020536386 A JP2020536386 A JP 2020536386A JP 2020519089 A JP2020519089 A JP 2020519089A JP 2020519089 A JP2020519089 A JP 2020519089A JP 2020536386 A JP2020536386 A JP 2020536386A
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- Prior art keywords
- acid
- polishing composition
- monomer unit
- substrate
- ethane
- Prior art date
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- Granted
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 36
- 239000010937 tungsten Substances 0.000 title claims abstract description 36
- 238000000227 grinding Methods 0.000 title claims description 20
- 239000002245 particle Substances 0.000 title description 52
- 238000005498 polishing Methods 0.000 claims abstract description 229
- 239000000203 mixture Substances 0.000 claims abstract description 191
- 239000000178 monomer Substances 0.000 claims abstract description 94
- 229920001577 copolymer Polymers 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000007800 oxidant agent Substances 0.000 claims abstract description 44
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 30
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 16
- 239000010941 cobalt Substances 0.000 claims abstract description 13
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 64
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 26
- 235000001014 amino acid Nutrition 0.000 claims description 23
- 150000001413 amino acids Chemical class 0.000 claims description 23
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 10
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 9
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical compound [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 claims description 8
- 239000004475 Arginine Substances 0.000 claims description 8
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 8
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 8
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 8
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 8
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 8
- 239000004472 Lysine Substances 0.000 claims description 8
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 8
- 229910001447 ferric ion Inorganic materials 0.000 claims description 7
- DZSVIVLGBJKQAP-UHFFFAOYSA-N 1-(2-methyl-5-propan-2-ylcyclohex-2-en-1-yl)propan-1-one Chemical compound CCC(=O)C1CC(C(C)C)CC=C1C DZSVIVLGBJKQAP-UHFFFAOYSA-N 0.000 claims description 6
- -1 acrylic ester Chemical class 0.000 claims description 5
- SFRLSTJPMFGBDP-UHFFFAOYSA-N 1,2-diphosphonoethylphosphonic acid Chemical compound OP(O)(=O)CC(P(O)(O)=O)P(O)(O)=O SFRLSTJPMFGBDP-UHFFFAOYSA-N 0.000 claims description 4
- INJFRROOFQOUGJ-UHFFFAOYSA-N 2-[hydroxy(methoxy)phosphoryl]butanedioic acid Chemical compound COP(O)(=O)C(C(O)=O)CC(O)=O INJFRROOFQOUGJ-UHFFFAOYSA-N 0.000 claims description 4
- OOOLSJAKRPYLSA-UHFFFAOYSA-N 2-ethyl-2-phosphonobutanedioic acid Chemical compound CCC(P(O)(O)=O)(C(O)=O)CC(O)=O OOOLSJAKRPYLSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000004471 Glycine Substances 0.000 claims description 4
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 4
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 4
- 235000004279 alanine Nutrition 0.000 claims description 4
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 4
- GTTBQSNGUYHPNK-UHFFFAOYSA-N hydroxymethylphosphonic acid Chemical compound OCP(O)(O)=O GTTBQSNGUYHPNK-UHFFFAOYSA-N 0.000 claims description 4
- MXYOPVWZZKEAGX-UHFFFAOYSA-N 1-phosphonoethylphosphonic acid Chemical compound OP(=O)(O)C(C)P(O)(O)=O MXYOPVWZZKEAGX-UHFFFAOYSA-N 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- MYWGVBFSIIZBHJ-UHFFFAOYSA-N 4-phosphonobutane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(C(O)=O)C(C(O)=O)CP(O)(O)=O MYWGVBFSIIZBHJ-UHFFFAOYSA-N 0.000 claims 3
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910000428 cobalt oxide Inorganic materials 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 description 20
- 230000001590 oxidative effect Effects 0.000 description 19
- 230000003628 erosive effect Effects 0.000 description 16
- 239000010410 layer Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 239000000872 buffer Substances 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 12
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 11
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000012141 concentrate Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 6
- 239000003139 biocide Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 150000007513 acids Chemical class 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000003115 biocidal effect Effects 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 150000003009 phosphonic acids Chemical class 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910000462 iron(III) oxide hydroxide Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
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- 239000006228 supernatant Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- ZHTZXROPWGWVRN-UHFFFAOYSA-N 2-(4-ethenylphenyl)propan-2-ylphosphonic acid Chemical compound CC(C)(c1ccc(C=C)cc1)P(O)(O)=O ZHTZXROPWGWVRN-UHFFFAOYSA-N 0.000 description 1
- GQTFHSAAODFMHB-UHFFFAOYSA-N 2-prop-2-enoyloxyethanesulfonic acid Chemical compound OS(=O)(=O)CCOC(=O)C=C GQTFHSAAODFMHB-UHFFFAOYSA-N 0.000 description 1
- KFNGWPXYNSJXOP-UHFFFAOYSA-N 3-(2-methylprop-2-enoyloxy)propane-1-sulfonic acid Chemical compound CC(=C)C(=O)OCCCS(O)(=O)=O KFNGWPXYNSJXOP-UHFFFAOYSA-N 0.000 description 1
- NYUTUWAFOUJLKI-UHFFFAOYSA-N 3-prop-2-enoyloxypropane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCOC(=O)C=C NYUTUWAFOUJLKI-UHFFFAOYSA-N 0.000 description 1
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical class [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- JFPCSTPGEBHGHL-UHFFFAOYSA-N OP(O)=O.NC(=O)C=C Chemical compound OP(O)=O.NC(=O)C=C JFPCSTPGEBHGHL-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
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- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
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- 235000003704 aspartic acid Nutrition 0.000 description 1
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- 238000010923 batch production Methods 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 229910001412 inorganic anion Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- 150000007524 organic acids Chemical class 0.000 description 1
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- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Inorganic materials [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
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- 239000004800 polyvinyl chloride Substances 0.000 description 1
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- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
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- MNCGMVDMOKPCSQ-UHFFFAOYSA-M sodium;2-phenylethenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C=CC1=CC=CC=C1 MNCGMVDMOKPCSQ-UHFFFAOYSA-M 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- 150000003890 succinate salts Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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Abstract
Description
この実施例は、本発明の実施形態に従って、表面被覆ジルコニア研削材を含み、さらに過酸化水素を含む研磨組成物の経時的なコロイド安定性を実証する。
この実施例は、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されたアルミナ、ジルコニア、または酸化セリウム研削材を含む研磨組成物を用いて、タングステンでオーバーコートしたパターン化酸化ケイ素被覆ウェハのバフ研磨の侵食に対する効果を実証する。
この実施例は、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されたアルミナ研削材を含む研磨組成物によって示されるTEOSおよび窒化ケイ素の除去率に対する有機ホスホン酸の効果を実証する。
この実施例は、アクリル酸−2−アクリルアミド−2−メチル−1−プロパンスルホン酸(AA−AMPS)コポリマーがシリカではなくアルミナ上に表面被覆を形成することを実証する。平均粒子サイズ50nm、100nm、および120nmのコロイド状シリカの10%水性分散液を、Waring(商標)ブレンダーを使用して、24,000の分子量を有する1.6%のAA−AMPSコポリマーと高せん断で5分間混合した。各分散液の最終的なpHを3.0に調整した。得られた溶液を1時間静置した後、約80,000gの遠心力場で遠心分離した。上清をサンプリングし、残留AA−AMPSについてクロマトグラフィーにより分析した。50nm、100nm、および120nmのシリカ分散液のそれぞれについて、AA−AMPSコポリマーの100%が上清で回収された。100nmの粒子サイズを有するアルファアルミナを使用して同じ分析を行った場合、AA−AMPSの70%のみが回収され、その一方でAA−AMPSの30%がアルミナ粒子に表面結合していることがわかった。
この実施例は、AA−AMPSコポリマーで処理されたシリカとアルミナのコロイド安定性の比較を示す。
この実施例は、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆したアルミナ研削材を含む研磨組成物を用いて、タングステンオーバーコートしたパターン化酸化ケイ素被覆ウェハのバフ研磨の侵食に対する効果を実証する。
この実施例は、表面被覆したセリア研削材のみを含む研磨組成物の時間の関数としてのコロイド安定性を実証する。
この実施例は、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆した研削材を含む研磨組成物が示すタングステン、TEOS、窒化ケイ素、およびTiNの除去率に対する有機ホスホン酸の効果を実証する。
Claims (25)
- 化学機械研磨組成物であって、
(a)セリア、チタニア、ジルコニア、およびそれらの組み合わせからなる群から選択される研削材であって、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されているか、またはスルホン酸モノマー単位およびホスホン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されている、研削材と、
(b)酸化剤と、
(c)水と、を含み、
前記研磨組成物が約2〜約5のpHを有する、化学機械研磨組成物。 - 前記コポリマーが、2−アクリルアミド−2−メチルプロパンスルホン酸モノマー単位およびアクリル酸モノマー単位からなる、請求項1に記載の研磨組成物。
- 前記研磨組成物が、2−アミノエチルホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、エチレンジアミンテトラ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、エタン−1,1−ジホスホン酸、エタン−1,1,2−トリホスホン酸、エタン−1−ヒドロキシ−1,1−ジホスホン酸、エタン−1−ヒドロキシ−1,1,2−トリホスホン酸、エタン−1,2−ジカルボキシ−1,2−ジホスホン酸、メタンヒドロキシホスホン酸、2−ホスホノブタン−1,2−ジカルボン酸、1−ホスホノブタン−2,3,4−トリカルボン酸、α−メチルホスホノコハク酸、およびそれらの組み合わせから選択される有機ホスホン酸をさらに含む、請求項1に記載の研磨組成物。
- 前記酸化剤が、第二鉄イオンを含む、請求項1に記載の研磨組成物。
- 前記酸化剤が、過酸化水素をさらに含む、請求項4に記載の研磨組成物。
- 前記研磨組成物が、アミノ酸をさらに含む、請求項1に記載の研磨組成物。
- 前記アミノ酸が、グリシン、リジン、アルギニン、またはアラニンである、請求項6に記載の研磨組成物。
- 化学機械研磨組成物であって、
(a)アルミナ研削材であって、前記アルミナが、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されているか、または前記研削材が、スルホン酸モノマー単位およびホスホン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されている、アルミナ研削材と、
(b)酸化剤と、
(c)有機ホスホン酸と、
(d)水と、を含み、
前記研磨組成物が約2〜約5のpHを有する、化学機械研磨組成物。 - 前記コポリマーが、2−アクリルアミド−2−メチルプロパンスルホン酸モノマー単位およびアクリル酸モノマー単位からなる、請求項8に記載の研磨組成物。
- 前記有機ホスホン酸が、2−アミノエチルホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、エチレンジアミンテトラ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、エタン−1,1−ジホスホン酸、エタン−1,1,2−トリホスホン酸、エタン−1−ヒドロキシ−1,1−ジホスホン酸、エタン−1−ヒドロキシ−1,1,2−トリホスホン酸、エタン−1,2−ジカルボキシ−1,2−ジホスホン酸、メタンヒドロキシホスホン酸、2−ホスホノブタン−1,2−ジカルボン酸、1−ホスホノブタン−2,3,4−トリカルボン酸、α−メチルホスホノコハク酸、およびそれらの組み合わせから選択される、請求項8に記載の研磨組成物。
- 前記酸化剤が、第二鉄イオンを含む、請求項8に記載の研磨組成物。
- 前記酸化剤が、過酸化水素をさらに含む、請求項11に記載の研磨組成物。
- 前記研磨組成物が、アミノ酸をさらに含む、請求項8に記載の研磨組成物。
- 前記アミノ酸が、グリシン、リジン、アルギニン、またはアラニンである、請求項13に記載の研磨組成物。
- 基板を化学機械研磨する方法であって、
(i)基板を提供することと、
(ii)研磨パッドを提供することと、
(iii)
(a)アルミナ、セリア、チタニア、ジルコニア、およびそれらの組み合わせからなる群から選択される研削材であって、スルホン酸モノマー単位およびカルボン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されているか、またはスルホン酸モノマー単位およびホスホン酸モノマー単位の組み合わせを含むコポリマーで表面被覆されている、研削材と、
(b)酸化剤と、
(c)水と、を含む化学機械研磨組成物を提供することであって、
前記研磨組成物が約2〜約5のpHを有する、化学機械研磨組成物を提供することと、
(iv)前記基板を前記研磨パッドおよび前記化学機械研磨組成物と接触させることと、
(v)前記研磨パッドおよび前記化学機械研磨組成物を前記基板に対して動かして、前記基板の少なくとも一部を研削して、前記基板を研磨することと、を含む、方法。 - 前記コポリマーが、2−アクリルアミド−2−メチルプロパンスルホン酸モノマー単位およびアクリル酸モノマー単位からなる、請求項15に記載の方法。
- 前記2−アクリルアミド−2−メチルプロパンスルホン酸モノマー単位とアクリル酸モノマー単位とのモル比の範囲が10:1〜1:10である、請求項16に記載の方法。
- 前記コポリマーが、アクリル酸エステルモノマー単位またはアリール基を含むモノマー単位を含まない、請求項15に記載の方法。
- 前記研磨組成物が、2−アミノエチルホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、エチレンジアミンテトラ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、エタン−1,1−ジホスホン酸、エタン−1,1,2−トリホスホン酸、エタン−1−ヒドロキシ−1,1−ジホスホン酸、エタン−1−ヒドロキシ−1,1,2−トリホスホン酸、エタン−1,2−ジカルボキシ−1,2−ジホスホン酸、メタンヒドロキシホスホン酸、2−ホスホノブタン−1,2−ジカルボン酸、1−ホスホノブタン−2,3,4−トリカルボン酸、α−メチルホスホノコハク酸、およびそれらの組み合わせから選択される有機ホスホン酸をさらに含む、請求項15に記載の方法。
- 前記酸化剤が、第二鉄イオンを含む、請求項15に記載の方法。
- 前記酸化剤が、過酸化水素をさらに含む、請求項20に記載の方法。
- 前記研磨組成物が、アミノ酸をさらに含む、請求項15に記載の研磨組成物。
- 前記アミノ酸が、グリシン、リジン、アルギニン、またはアラニンである、請求項22に記載の方法。
- 前記基板が、タングステンまたはコバルトの少なくとも1つの層および酸化ケイ素の少なくとも1つの層を含み、前記タングステンまたはコバルトの少なくとも一部および前記酸化ケイ素の少なくとも一部が研削されて、前記基板を研磨する、請求項15に記載の方法。
- 前記基板がさらにTiNを含み、前記TiNの少なくとも一部が研削されて、前記基板を研磨する、請求項24に記載の方法。
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EP3692107B1 (en) | 2024-02-28 |
US11043151B2 (en) | 2021-06-22 |
TW201922978A (zh) | 2019-06-16 |
US20190100677A1 (en) | 2019-04-04 |
TWI708822B (zh) | 2020-11-01 |
EP3692107A1 (en) | 2020-08-12 |
WO2019070793A1 (en) | 2019-04-11 |
EP3692107A4 (en) | 2021-07-07 |
CN111183195A (zh) | 2020-05-19 |
CN111183195B (zh) | 2022-05-10 |
KR20200051822A (ko) | 2020-05-13 |
JP7295849B2 (ja) | 2023-06-21 |
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