KR102307728B1 - 질화규소의 선택적 제거를 위한 cmp 조성물 및 방법 - Google Patents

질화규소의 선택적 제거를 위한 cmp 조성물 및 방법 Download PDF

Info

Publication number
KR102307728B1
KR102307728B1 KR1020167018177A KR20167018177A KR102307728B1 KR 102307728 B1 KR102307728 B1 KR 102307728B1 KR 1020167018177 A KR1020167018177 A KR 1020167018177A KR 20167018177 A KR20167018177 A KR 20167018177A KR 102307728 B1 KR102307728 B1 KR 102307728B1
Authority
KR
South Korea
Prior art keywords
composition
cmp
cationic polymer
polishing
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167018177A
Other languages
English (en)
Korean (ko)
Other versions
KR20160095123A (ko
Inventor
드미트리 디네가
사이람 세카르
런허 지아
다니엘 마테야
Original Assignee
씨엠씨 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 씨엠씨 머티리얼즈, 인코포레이티드 filed Critical 씨엠씨 머티리얼즈, 인코포레이티드
Publication of KR20160095123A publication Critical patent/KR20160095123A/ko
Application granted granted Critical
Publication of KR102307728B1 publication Critical patent/KR102307728B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020167018177A 2013-12-09 2014-12-04 질화규소의 선택적 제거를 위한 cmp 조성물 및 방법 Active KR102307728B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/100,339 US9850402B2 (en) 2013-12-09 2013-12-09 CMP compositions and methods for selective removal of silicon nitride
US14/100,339 2013-12-09
PCT/US2014/068524 WO2015088871A1 (en) 2013-12-09 2014-12-04 Cmp compositions and methods for selective removal of silicon nitride

Publications (2)

Publication Number Publication Date
KR20160095123A KR20160095123A (ko) 2016-08-10
KR102307728B1 true KR102307728B1 (ko) 2021-10-05

Family

ID=53270508

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167018177A Active KR102307728B1 (ko) 2013-12-09 2014-12-04 질화규소의 선택적 제거를 위한 cmp 조성물 및 방법

Country Status (6)

Country Link
US (1) US9850402B2 (enExample)
JP (1) JP6530401B2 (enExample)
KR (1) KR102307728B1 (enExample)
CN (1) CN105814668B (enExample)
TW (1) TWI546372B (enExample)
WO (1) WO2015088871A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
CN113579992A (zh) 2014-10-17 2021-11-02 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US9597768B1 (en) 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
JP6723440B2 (ja) * 2016-08-26 2020-07-15 フエロ コーポレーション スラリー組成物及びシリカの選択的研磨の方法
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP6962247B2 (ja) * 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
US12227673B2 (en) * 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
TWI864116B (zh) * 2019-09-30 2024-12-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
WO2021081145A1 (en) 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7778621B2 (ja) 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法
KR20220153788A (ko) * 2021-05-12 2022-11-21 성균관대학교산학협력단 무기 입자를 포함하는 수분산액

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012142374A2 (en) * 2011-04-15 2012-10-18 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970042941A (ko) * 1995-12-29 1997-07-26 베일리 웨인 피 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20090047870A1 (en) 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
KR101349437B1 (ko) * 2007-09-21 2014-01-08 히타치가세이가부시끼가이샤 실리콘막 연마용 ｃｍｐ 슬러리 및 연마방법
EP2356192B1 (en) * 2008-09-19 2020-01-15 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
US8366959B2 (en) 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
CN104541361A (zh) * 2012-05-07 2015-04-22 巴斯夫欧洲公司 制造半导体装置的方法
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012142374A2 (en) * 2011-04-15 2012-10-18 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials

Also Published As

Publication number Publication date
US20150159046A1 (en) 2015-06-11
KR20160095123A (ko) 2016-08-10
TW201525121A (zh) 2015-07-01
JP2017505532A (ja) 2017-02-16
WO2015088871A1 (en) 2015-06-18
US9850402B2 (en) 2017-12-26
CN105814668B (zh) 2018-10-26
TWI546372B (zh) 2016-08-21
CN105814668A (zh) 2016-07-27
JP6530401B2 (ja) 2019-06-12

Similar Documents

Publication Publication Date Title
KR102307728B1 (ko) 질화규소의 선택적 제거를 위한 cmp 조성물 및 방법
KR102253294B1 (ko) 산화규소, 질화규소 및 폴리실리콘 물질의 cmp를 위한 조성물 및 방법
EP2029689B1 (en) Polishing composition containing polyether amine
CN101437912B (zh) 氧化稳定的化学机械抛光组合物及方法
KR101173753B1 (ko) 구리-부동태화 ｃｍｐ 조성물 및 방법
TWI747352B (zh) 化學機械拋光組合物及其使用方法
JP6603234B2 (ja) タングステン材料のｃｍｐ用組成物及び方法
KR102444550B1 (ko) 게르마늄 화학적 기계적 연마
KR20220042239A (ko) 텅스텐 cmp용 조성물
CN114026189A (zh) 氧化硅膜用研磨液组合物

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160706

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20191114

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20210114

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210712

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210927

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210928

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240826

Start annual number: 4

End annual number: 4