CN105814668B - 用于选择性移除硅氮化物的化学机械抛光组合物及方法 - Google Patents

用于选择性移除硅氮化物的化学机械抛光组合物及方法 Download PDF

Info

Publication number
CN105814668B
CN105814668B CN201480067424.8A CN201480067424A CN105814668B CN 105814668 B CN105814668 B CN 105814668B CN 201480067424 A CN201480067424 A CN 201480067424A CN 105814668 B CN105814668 B CN 105814668B
Authority
CN
China
Prior art keywords
cmp
composition
polishing
oxide
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480067424.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN105814668A (zh
Inventor
D.戴恩加
S.谢卡
贾仁合
D.马特加
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN105814668A publication Critical patent/CN105814668A/zh
Application granted granted Critical
Publication of CN105814668B publication Critical patent/CN105814668B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201480067424.8A 2013-12-09 2014-12-04 用于选择性移除硅氮化物的化学机械抛光组合物及方法 Active CN105814668B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/100,339 2013-12-09
US14/100,339 US9850402B2 (en) 2013-12-09 2013-12-09 CMP compositions and methods for selective removal of silicon nitride
PCT/US2014/068524 WO2015088871A1 (en) 2013-12-09 2014-12-04 Cmp compositions and methods for selective removal of silicon nitride

Publications (2)

Publication Number Publication Date
CN105814668A CN105814668A (zh) 2016-07-27
CN105814668B true CN105814668B (zh) 2018-10-26

Family

ID=53270508

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480067424.8A Active CN105814668B (zh) 2013-12-09 2014-12-04 用于选择性移除硅氮化物的化学机械抛光组合物及方法

Country Status (6)

Country Link
US (1) US9850402B2 (enExample)
JP (1) JP6530401B2 (enExample)
KR (1) KR102307728B1 (enExample)
CN (1) CN105814668B (enExample)
TW (1) TWI546372B (enExample)
WO (1) WO2015088871A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9597768B1 (en) 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
CN109476954B (zh) * 2016-08-26 2021-07-23 福禄公司 选择性硅石抛光的浆料组合物和方法
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP6962247B2 (ja) * 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
JP7566895B2 (ja) * 2019-09-30 2024-10-15 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
WO2021081145A1 (en) 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7778621B2 (ja) 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法
KR20220153788A (ko) * 2021-05-12 2022-11-21 성균관대학교산학협력단 무기 입자를 포함하는 수분산액

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101437918A (zh) * 2006-05-02 2009-05-20 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
CN102046743A (zh) * 2005-12-06 2011-05-04 卡伯特微电子公司 具有高的氮化硅对氧化硅移除速率比的抛光组合物及方法
US20120264304A1 (en) * 2011-04-15 2012-10-18 William Ward Compositions and methods for selective polishing of silicon nitride materials

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970042941A (ko) * 1995-12-29 1997-07-26 베일리 웨인 피 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20090047870A1 (en) 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
JP5333222B2 (ja) * 2007-09-21 2013-11-06 日立化成株式会社 シリコン膜研磨用ｃｍｐスラリー及び研磨方法
US8252687B2 (en) * 2008-09-19 2012-08-28 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
EP2329519B1 (en) * 2008-09-26 2013-10-23 Rhodia Opérations Abrasive compositions for chemical mechanical polishing and methods for using same
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
SG11201407168PA (en) * 2012-05-07 2014-11-27 Basf Se Process for manufacture of semiconductor devices
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102046743A (zh) * 2005-12-06 2011-05-04 卡伯特微电子公司 具有高的氮化硅对氧化硅移除速率比的抛光组合物及方法
CN101437918A (zh) * 2006-05-02 2009-05-20 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
US20120264304A1 (en) * 2011-04-15 2012-10-18 William Ward Compositions and methods for selective polishing of silicon nitride materials

Also Published As

Publication number Publication date
WO2015088871A1 (en) 2015-06-18
TW201525121A (zh) 2015-07-01
JP6530401B2 (ja) 2019-06-12
KR20160095123A (ko) 2016-08-10
US20150159046A1 (en) 2015-06-11
KR102307728B1 (ko) 2021-10-05
JP2017505532A (ja) 2017-02-16
TWI546372B (zh) 2016-08-21
CN105814668A (zh) 2016-07-27
US9850402B2 (en) 2017-12-26

Similar Documents

Publication Publication Date Title
CN105814668B (zh) 用于选择性移除硅氮化物的化学机械抛光组合物及方法
KR102253294B1 (ko) 산화규소, 질화규소 및 폴리실리콘 물질의 cmp를 위한 조성물 및 방법
JP7270611B2 (ja) タングステンｃｍｐ用組成物
KR102482166B1 (ko) 텅스텐 cmp용 조성물
KR102480609B1 (ko) 텅스텐 cmp용 조성물
CN102046743B (zh) 具有高的氮化硅对氧化硅移除速率比的抛光组合物及方法
CN101437918B (zh) 用于半导体材料的化学机械抛光的组合物及方法
CN106104764B (zh) 用于钨材料的化学机械抛光的组合物及方法
TWI496855B (zh) 用於氮化矽材料之選擇性拋光之組合物及方法
KR20230144107A (ko) 텅스텐 cmp용 조성물
TWI572687B (zh) 鍺化學機械拋光
JP2008519466A (ja) 窒化ケイ素の除去速度が酸化ケイ素と比べて高い研磨組成物及び方法
KR20220034854A (ko) 벌크 텅스텐 슬러리의 배리어 필름 제거율을 증가시키는 방법
JP6999714B2 (ja) シャロートレンチアイソレーション化学機械研磨スラリー
CN114026189A (zh) 氧化硅膜用研磨液组合物
CN114787304A (zh) 低氧化物沟槽凹陷的浅沟槽隔离化学机械平面化抛光

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: Cabot Microelectronics Corp.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, America

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, America

Patentee before: CMC Materials Co.,Ltd.

CP01 Change in the name or title of a patent holder