CN105814668B - 用于选择性移除硅氮化物的化学机械抛光组合物及方法 - Google Patents

用于选择性移除硅氮化物的化学机械抛光组合物及方法 Download PDF

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Publication number
CN105814668B
CN105814668B CN201480067424.8A CN201480067424A CN105814668B CN 105814668 B CN105814668 B CN 105814668B CN 201480067424 A CN201480067424 A CN 201480067424A CN 105814668 B CN105814668 B CN 105814668B
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China
Prior art keywords
cationic polymer
cmp
composition
polishing
abrasive
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Chinese (zh)
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CN105814668A (zh
Inventor
D.戴恩加
S.谢卡
贾仁合
D.马特加
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201480067424.8A 2013-12-09 2014-12-04 用于选择性移除硅氮化物的化学机械抛光组合物及方法 Active CN105814668B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/100,339 US9850402B2 (en) 2013-12-09 2013-12-09 CMP compositions and methods for selective removal of silicon nitride
US14/100,339 2013-12-09
PCT/US2014/068524 WO2015088871A1 (en) 2013-12-09 2014-12-04 Cmp compositions and methods for selective removal of silicon nitride

Publications (2)

Publication Number Publication Date
CN105814668A CN105814668A (zh) 2016-07-27
CN105814668B true CN105814668B (zh) 2018-10-26

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CN201480067424.8A Active CN105814668B (zh) 2013-12-09 2014-12-04 用于选择性移除硅氮化物的化学机械抛光组合物及方法

Country Status (6)

Country Link
US (1) US9850402B2 (enExample)
JP (1) JP6530401B2 (enExample)
KR (1) KR102307728B1 (enExample)
CN (1) CN105814668B (enExample)
TW (1) TWI546372B (enExample)
WO (1) WO2015088871A1 (enExample)

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US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
KR20240015167A (ko) 2014-10-17 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
US9597768B1 (en) 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
CN113103145B (zh) 2015-10-30 2023-04-11 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
KR102226055B1 (ko) * 2016-08-26 2021-03-10 페로 코포레이션 슬러리 조성물 및 선택적인 실리카 연마 방법
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP6962247B2 (ja) * 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
KR102874253B1 (ko) * 2019-09-30 2025-10-20 버슘머트리얼즈 유에스, 엘엘씨 반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법
US12269969B2 (en) 2019-10-22 2025-04-08 Cmc Materials Llc Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7778621B2 (ja) 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法
KR20220153788A (ko) * 2021-05-12 2022-11-21 성균관대학교산학협력단 무기 입자를 포함하는 수분산액
US20230242790A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon

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CN101437918A (zh) * 2006-05-02 2009-05-20 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
CN102046743A (zh) * 2005-12-06 2011-05-04 卡伯特微电子公司 具有高的氮化硅对氧化硅移除速率比的抛光组合物及方法
US20120264304A1 (en) * 2011-04-15 2012-10-18 William Ward Compositions and methods for selective polishing of silicon nitride materials

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KR101243517B1 (ko) * 2007-09-21 2013-03-20 히타치가세이가부시끼가이샤 실리콘막 연마용 ｃｍｐ 슬러리 및 연마방법
WO2010033156A2 (en) * 2008-09-19 2010-03-25 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
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JP2015521380A (ja) * 2012-05-07 2015-07-27 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ Ｎ−複素環を含む化合物を含むｃｍｐ（化学的機械研磨）組成物の存在下での、ｉｉｉ−ｖ材料の化学的機械研磨（ｃｍｐ）を含む半導体デバイスの製造方法
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
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Patent Citations (3)

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CN102046743A (zh) * 2005-12-06 2011-05-04 卡伯特微电子公司 具有高的氮化硅对氧化硅移除速率比的抛光组合物及方法
CN101437918A (zh) * 2006-05-02 2009-05-20 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
US20120264304A1 (en) * 2011-04-15 2012-10-18 William Ward Compositions and methods for selective polishing of silicon nitride materials

Also Published As

Publication number Publication date
JP2017505532A (ja) 2017-02-16
CN105814668A (zh) 2016-07-27
TW201525121A (zh) 2015-07-01
JP6530401B2 (ja) 2019-06-12
TWI546372B (zh) 2016-08-21
WO2015088871A1 (en) 2015-06-18
KR102307728B1 (ko) 2021-10-05
US20150159046A1 (en) 2015-06-11
US9850402B2 (en) 2017-12-26
KR20160095123A (ko) 2016-08-10

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