JP6530401B2 - 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 - Google Patents

窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 Download PDF

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JP6530401B2
JP6530401B2 JP2016536711A JP2016536711A JP6530401B2 JP 6530401 B2 JP6530401 B2 JP 6530401B2 JP 2016536711 A JP2016536711 A JP 2016536711A JP 2016536711 A JP2016536711 A JP 2016536711A JP 6530401 B2 JP6530401 B2 JP 6530401B2
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cationic polymer
composition
cmp
polishing
poly
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JP2017505532A5 (enExample
JP2017505532A (ja
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ディネガ ドミトリー
ディネガ ドミトリー
シェカール サイラム
シェカール サイラム
レンホーァ ジア
レンホーァ ジア
マテジャ ダニエル
マテジャ ダニエル
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016536711A 2013-12-09 2014-12-04 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 Active JP6530401B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/100,339 2013-12-09
US14/100,339 US9850402B2 (en) 2013-12-09 2013-12-09 CMP compositions and methods for selective removal of silicon nitride
PCT/US2014/068524 WO2015088871A1 (en) 2013-12-09 2014-12-04 Cmp compositions and methods for selective removal of silicon nitride

Publications (3)

Publication Number Publication Date
JP2017505532A JP2017505532A (ja) 2017-02-16
JP2017505532A5 JP2017505532A5 (enExample) 2018-01-11
JP6530401B2 true JP6530401B2 (ja) 2019-06-12

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JP2016536711A Active JP6530401B2 (ja) 2013-12-09 2014-12-04 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法

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Country Link
US (1) US9850402B2 (enExample)
JP (1) JP6530401B2 (enExample)
KR (1) KR102307728B1 (enExample)
CN (1) CN105814668B (enExample)
TW (1) TWI546372B (enExample)
WO (1) WO2015088871A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
SG10202002601QA (en) 2014-10-17 2020-05-28 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US9597768B1 (en) 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
CN113103145B (zh) 2015-10-30 2023-04-11 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP6962247B2 (ja) * 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
US10584266B2 (en) 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
US12227673B2 (en) * 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
KR102874253B1 (ko) * 2019-09-30 2025-10-20 버슘머트리얼즈 유에스, 엘엘씨 반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
JP2022553347A (ja) 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 酸化ケイ素に比べて窒化ケイ素およびポリシリコンについて高い選択性を有する研磨組成物および方法
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7778621B2 (ja) 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法
KR20220153788A (ko) * 2021-05-12 2022-11-21 성균관대학교산학협력단 무기 입자를 포함하는 수분산액
US20230242790A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970042941A (ko) * 1995-12-29 1997-07-26 베일리 웨인 피 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20090047870A1 (en) 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
KR101243517B1 (ko) * 2007-09-21 2013-03-20 히타치가세이가부시끼가이샤 실리콘막 연마용 ｃｍｐ 슬러리 및 연마방법
CN102159662B (zh) * 2008-09-19 2014-05-21 卡伯特微电子公司 用于低k电介质的阻挡物浆料
JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
US8808573B2 (en) 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
CN104541361A (zh) * 2012-05-07 2015-04-22 巴斯夫欧洲公司 制造半导体装置的方法
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials

Also Published As

Publication number Publication date
CN105814668A (zh) 2016-07-27
WO2015088871A1 (en) 2015-06-18
KR20160095123A (ko) 2016-08-10
TW201525121A (zh) 2015-07-01
JP2017505532A (ja) 2017-02-16
CN105814668B (zh) 2018-10-26
TWI546372B (zh) 2016-08-21
US20150159046A1 (en) 2015-06-11
US9850402B2 (en) 2017-12-26
KR102307728B1 (ko) 2021-10-05

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