JP2017517900A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017517900A5 JP2017517900A5 JP2017501124A JP2017501124A JP2017517900A5 JP 2017517900 A5 JP2017517900 A5 JP 2017517900A5 JP 2017501124 A JP2017501124 A JP 2017501124A JP 2017501124 A JP2017501124 A JP 2017501124A JP 2017517900 A5 JP2017517900 A5 JP 2017517900A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- composition
- colloidal silica
- abrasive particles
- silica abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 15
- 239000002245 particle Substances 0.000 claims 15
- 239000008119 colloidal silica Substances 0.000 claims 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 8
- 238000005498 polishing Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 5
- 229910052742 iron Inorganic materials 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 239000010937 tungsten Substances 0.000 claims 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 2
- 239000003054 catalyst Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 claims 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims 1
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 claims 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims 1
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000001361 adipic acid Substances 0.000 claims 1
- 235000011037 adipic acid Nutrition 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- -1 amine compound Chemical class 0.000 claims 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims 1
- 235000003704 aspartic acid Nutrition 0.000 claims 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims 1
- 239000011976 maleic acid Substances 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000011164 primary particle Substances 0.000 claims 1
- 239000003381 stabilizer Substances 0.000 claims 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten dioxide Inorganic materials O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/222,086 US9309442B2 (en) | 2014-03-21 | 2014-03-21 | Composition for tungsten buffing |
| US14/222,086 | 2014-03-21 | ||
| PCT/US2015/021666 WO2015143270A1 (en) | 2014-03-21 | 2015-03-20 | Composition for tungsten buffing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017517900A JP2017517900A (ja) | 2017-06-29 |
| JP2017517900A5 true JP2017517900A5 (enExample) | 2018-04-12 |
| JP6616394B2 JP6616394B2 (ja) | 2019-12-04 |
Family
ID=54141489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017501124A Active JP6616394B2 (ja) | 2014-03-21 | 2015-03-20 | タングステンのバフ研磨用組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9309442B2 (enExample) |
| EP (1) | EP3120380B1 (enExample) |
| JP (1) | JP6616394B2 (enExample) |
| KR (1) | KR102390227B1 (enExample) |
| CN (1) | CN106133881B (enExample) |
| TW (1) | TWI535836B (enExample) |
| WO (1) | WO2015143270A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201610328YA (en) * | 2014-06-25 | 2017-01-27 | Cabot Microelectronics Corp | Colloidal silica chemical-mechanical polishing composition |
| US10688623B2 (en) * | 2014-09-30 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Slurry dispersion system with real time control |
| JP2017061612A (ja) * | 2015-09-25 | 2017-03-30 | Jsr株式会社 | 化学機械研磨用組成物および化学機械研磨方法 |
| US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| US9771496B2 (en) * | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
| US20190112196A1 (en) * | 2016-03-30 | 2019-04-18 | Fujimi Incorporated | Cation-modified silica raw material dispersion |
| US10316218B2 (en) * | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| CN111094481A (zh) * | 2017-09-15 | 2020-05-01 | 嘉柏微电子材料股份公司 | 用于钨化学机械抛光的组合物 |
| US10647887B2 (en) | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
| US11111435B2 (en) | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
| US10968366B2 (en) | 2018-12-04 | 2021-04-06 | Cmc Materials, Inc. | Composition and method for metal CMP |
| US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| WO2021141741A1 (en) | 2020-01-07 | 2021-07-15 | Cmc Materials, Inc. | Derivatized polyamino acids |
| KR20210095465A (ko) | 2020-01-23 | 2021-08-02 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| CN111593350A (zh) * | 2020-06-18 | 2020-08-28 | 周家勤 | 一种铝合金镜面化学抛光液及其抛光方法 |
| KR102531445B1 (ko) * | 2020-10-28 | 2023-05-12 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
| KR102782549B1 (ko) * | 2021-08-23 | 2025-03-14 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR20250059910A (ko) * | 2023-10-25 | 2025-05-07 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
Family Cites Families (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP3810588B2 (ja) | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2001004226A2 (en) | 1999-07-07 | 2001-01-18 | Cabot Microelectronics Corporation | Cmp composition containing silane modified abrasive particles |
| US6334880B1 (en) | 1999-12-07 | 2002-01-01 | Silbond Corporation | Abrasive media and aqueous slurries for chemical mechanical polishing and planarization |
| TWI296006B (enExample) * | 2000-02-09 | 2008-04-21 | Jsr Corp | |
| US6646348B1 (en) | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
| JP4435391B2 (ja) | 2000-08-04 | 2010-03-17 | 扶桑化学工業株式会社 | コロイド状シリカスラリー |
| DE10065027A1 (de) | 2000-12-23 | 2002-07-04 | Degussa | Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung |
| US6656241B1 (en) | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
| TW591089B (en) | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
| DE10164262A1 (de) | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US7056449B2 (en) | 2002-08-14 | 2006-06-06 | Rohm And Haas Company | Aqueous silica dispersion |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| KR20060015723A (ko) | 2003-05-09 | 2006-02-20 | 산요가세이고교 가부시키가이샤 | 씨엠피 프로세스용 연마액 및 연마방법 |
| US8309615B2 (en) | 2003-08-04 | 2012-11-13 | Rohm And Haas Company | Aqueous silica dispersion |
| US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7022255B2 (en) | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
| US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US20060124592A1 (en) | 2004-12-09 | 2006-06-15 | Miller Anne E | Chemical mechanical polish slurry |
| EP1836268A4 (en) * | 2004-12-13 | 2009-12-23 | Planar Solutions Llc | COLLIDAL SILICA-BASED FRACTION FOR CHEMICAL-MECHANICAL POLISHING |
| TWI434957B (zh) | 2005-06-06 | 2014-04-21 | Advanced Tech Materials | 單板製程用之整合化學機械拋光組成物及方法 |
| US20070075042A1 (en) | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
| KR20070088245A (ko) | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
| US8163049B2 (en) | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
| US8961677B2 (en) | 2006-04-26 | 2015-02-24 | Silbond Corporation | Suspension of nanoparticles and method for making the same |
| US7585340B2 (en) | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
| WO2007146680A1 (en) | 2006-06-06 | 2007-12-21 | Florida State University Research Foundation , Inc. | Stabilized silica colloid |
| JP4836731B2 (ja) | 2006-07-18 | 2011-12-14 | 旭硝子株式会社 | 磁気ディスク用ガラス基板の製造方法 |
| DE112007001757B4 (de) | 2006-07-31 | 2023-10-05 | Fuso Chemical Co., Ltd. | Siliziumdioxid-Sol |
| JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| US20080149591A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing |
| US7691287B2 (en) | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| JP5322455B2 (ja) | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| CN101611476B (zh) * | 2007-02-27 | 2015-11-25 | 日立化成株式会社 | 金属用研磨液以及研磨方法 |
| US9550683B2 (en) | 2007-03-27 | 2017-01-24 | Fuso Chemical Co., Ltd. | Colloidal silica, and method for production thereof |
| JP2008288398A (ja) | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法 |
| US7915071B2 (en) | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
| JP5519507B2 (ja) | 2007-09-21 | 2014-06-11 | キャボット マイクロエレクトロニクス コーポレイション | アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法 |
| MY149975A (en) | 2007-09-21 | 2013-11-15 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| DE102008008184A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion |
| JP5441345B2 (ja) | 2008-03-27 | 2014-03-12 | 富士フイルム株式会社 | 研磨液、及び研磨方法 |
| CN102768954B (zh) * | 2008-04-16 | 2015-03-25 | 日立化成株式会社 | Cmp用研磨液以及研磨方法 |
| WO2009129384A2 (en) | 2008-04-18 | 2009-10-22 | Saint-Gobain Abrasives, Inc. | Hydrophilic and hydrophobic silane surface modification of abrasive grains |
| WO2010033156A2 (en) | 2008-09-19 | 2010-03-25 | Cabot Microelectronics Corporation | Barrier slurry for low-k dielectrics |
| JP5312887B2 (ja) * | 2008-09-24 | 2013-10-09 | 富士フイルム株式会社 | 研磨液 |
| CN102164853B (zh) * | 2008-09-26 | 2014-12-31 | 扶桑化学工业株式会社 | 含有具有弯曲结构和/或分支结构的二氧化硅二次颗粒的胶体二氧化硅及其制造方法 |
| KR101678114B1 (ko) | 2008-09-26 | 2016-11-21 | 로디아 오퍼레이션스 | 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법 |
| WO2010085324A1 (en) | 2009-01-20 | 2010-07-29 | Cabot Corporation | Compositons comprising silane modified metal oxides |
| US8119529B2 (en) | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
| SG176255A1 (en) | 2009-08-19 | 2012-01-30 | Hitachi Chemical Co Ltd | Polishing solution for cmp and polishing method |
| JP2011216582A (ja) | 2010-03-31 | 2011-10-27 | Fujifilm Corp | 研磨方法、および研磨液 |
| JP5141792B2 (ja) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | Cmp研磨液及び研磨方法 |
| KR101243331B1 (ko) | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법 |
| JP5844135B2 (ja) * | 2010-12-24 | 2016-01-13 | 花王株式会社 | 研磨液組成物の製造方法 |
| US8366059B2 (en) | 2011-01-06 | 2013-02-05 | GM Global Technology Operations LLC | Position controlled cable guide clip |
| SG11201505490RA (en) * | 2013-02-01 | 2015-08-28 | Fujimi Inc | Surface selective polishing compositions |
-
2014
- 2014-03-21 US US14/222,086 patent/US9309442B2/en active Active
-
2015
- 2015-03-20 EP EP15764567.2A patent/EP3120380B1/en active Active
- 2015-03-20 WO PCT/US2015/021666 patent/WO2015143270A1/en not_active Ceased
- 2015-03-20 CN CN201580015491.XA patent/CN106133881B/zh active Active
- 2015-03-20 JP JP2017501124A patent/JP6616394B2/ja active Active
- 2015-03-20 KR KR1020167028910A patent/KR102390227B1/ko active Active
- 2015-03-20 TW TW104109036A patent/TWI535836B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017517900A5 (enExample) | ||
| JP2017515302A5 (enExample) | ||
| JP6633540B2 (ja) | 混合研磨剤タングステンcmp組成物 | |
| JP6625997B2 (ja) | タングステンcmp用の組成物 | |
| US9566686B2 (en) | Composition for tungsten CMP | |
| US9303188B2 (en) | Composition for tungsten CMP | |
| KR102390227B1 (ko) | 텅스텐 버핑용 조성물 | |
| JP2022028647A (ja) | カチオン性界面活性剤及びシクロデキストリンを含むタングステン処理スラリー | |
| JP6889156B2 (ja) | カチオン性界面活性剤を含むタングステン処理スラリー | |
| EP3122836A1 (en) | Mixed abrasive tungsten cmp composition | |
| JP2006121101A5 (enExample) | ||
| JP2020534679A (ja) | タングステンcmp用組成物 | |
| JP2011530166A5 (enExample) | ||
| US10676647B1 (en) | Composition for tungsten CMP | |
| JP2018510230A5 (enExample) | ||
| JP2007324606A5 (enExample) | ||
| JPWO2021202500A5 (enExample) |