TWI535836B - 用於鎢拋光之組合物 - Google Patents

用於鎢拋光之組合物 Download PDF

Info

Publication number
TWI535836B
TWI535836B TW104109036A TW104109036A TWI535836B TW I535836 B TWI535836 B TW I535836B TW 104109036 A TW104109036 A TW 104109036A TW 104109036 A TW104109036 A TW 104109036A TW I535836 B TWI535836 B TW I535836B
Authority
TW
Taiwan
Prior art keywords
composition
acid
polishing
colloidal ceria
abrasive particles
Prior art date
Application number
TW104109036A
Other languages
English (en)
Chinese (zh)
Other versions
TW201546252A (zh
Inventor
琳 富
傑佛瑞 戴薩
史帝芬 葛倫拜
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201546252A publication Critical patent/TW201546252A/zh
Application granted granted Critical
Publication of TWI535836B publication Critical patent/TWI535836B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104109036A 2014-03-21 2015-03-20 用於鎢拋光之組合物 TWI535836B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/222,086 US9309442B2 (en) 2014-03-21 2014-03-21 Composition for tungsten buffing

Publications (2)

Publication Number Publication Date
TW201546252A TW201546252A (zh) 2015-12-16
TWI535836B true TWI535836B (zh) 2016-06-01

Family

ID=54141489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109036A TWI535836B (zh) 2014-03-21 2015-03-20 用於鎢拋光之組合物

Country Status (7)

Country Link
US (1) US9309442B2 (enExample)
EP (1) EP3120380B1 (enExample)
JP (1) JP6616394B2 (enExample)
KR (1) KR102390227B1 (enExample)
CN (1) CN106133881B (enExample)
TW (1) TWI535836B (enExample)
WO (1) WO2015143270A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201610328YA (en) * 2014-06-25 2017-01-27 Cabot Microelectronics Corp Colloidal silica chemical-mechanical polishing composition
US10688623B2 (en) 2014-09-30 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispersion system with real time control
JP2017061612A (ja) * 2015-09-25 2017-03-30 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
WO2017169602A1 (ja) * 2016-03-30 2017-10-05 株式会社フジミインコーポレーテッド カチオン変性シリカ原料分散液
US10316218B2 (en) * 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
EP3681964B1 (en) * 2017-09-15 2023-11-22 CMC Materials, Inc. Composition for tungsten cmp
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
EP4087904B1 (en) 2020-01-07 2026-01-28 CMC Materials LLC Derivatized polyamino acids
KR20210095465A (ko) * 2020-01-23 2021-08-02 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN111593350A (zh) * 2020-06-18 2020-08-28 周家勤 一种铝合金镜面化学抛光液及其抛光方法
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR20250059910A (ko) * 2023-10-25 2025-05-07 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3810588B2 (ja) 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
EP1200532B1 (en) 1999-07-07 2006-08-30 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles
US6334880B1 (en) 1999-12-07 2002-01-01 Silbond Corporation Abrasive media and aqueous slurries for chemical mechanical polishing and planarization
TWI296006B (enExample) * 2000-02-09 2008-04-21 Jsr Corp
US6646348B1 (en) 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP4435391B2 (ja) 2000-08-04 2010-03-17 扶桑化学工業株式会社 コロイド状シリカスラリー
DE10065027A1 (de) 2000-12-23 2002-07-04 Degussa Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
TW591089B (en) 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
DE10164262A1 (de) 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7056449B2 (en) 2002-08-14 2006-06-06 Rohm And Haas Company Aqueous silica dispersion
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
JPWO2004100242A1 (ja) 2003-05-09 2006-07-13 三洋化成工業株式会社 Cmpプロセス用研磨液及び研磨方法
US8309615B2 (en) 2003-08-04 2012-11-13 Rohm And Haas Company Aqueous silica dispersion
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7022255B2 (en) 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US7247567B2 (en) 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US20060124592A1 (en) 2004-12-09 2006-06-15 Miller Anne E Chemical mechanical polish slurry
SG160384A1 (en) * 2004-12-13 2010-04-29 Planar Solutions Llc Colloidal silica based chemical mechanical polishing slurry
JP2008546214A (ja) 2005-06-06 2008-12-18 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス
US20070075042A1 (en) 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR20070088245A (ko) 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US8163049B2 (en) 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
US8961677B2 (en) 2006-04-26 2015-02-24 Silbond Corporation Suspension of nanoparticles and method for making the same
US7585340B2 (en) 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
WO2007146680A1 (en) 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
JP4836731B2 (ja) 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
WO2008015943A1 (fr) 2006-07-31 2008-02-07 Fuso Chemical Co.Ltd. Sol de silice et son procédé de production
JP2008117807A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 研磨用組成物及び研磨方法
US20080149591A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
US7691287B2 (en) 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
JP5381701B2 (ja) * 2007-02-27 2014-01-08 日立化成株式会社 金属用研磨液及び研磨方法
CN101641288B (zh) 2007-03-27 2013-07-03 扶桑化学工业株式会社 胶态二氧化硅及其制造方法
JP2008288398A (ja) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法
US7915071B2 (en) 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
KR101232442B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
US7994057B2 (en) 2007-09-21 2011-08-09 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
DE102008008184A1 (de) * 2008-02-08 2009-08-13 Evonik Degussa Gmbh Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion
JP5441345B2 (ja) 2008-03-27 2014-03-12 富士フイルム株式会社 研磨液、及び研磨方法
KR101263625B1 (ko) * 2008-04-16 2013-05-10 히타치가세이가부시끼가이샤 Cmp용 연마액 및 연마방법
US8021449B2 (en) 2008-04-18 2011-09-20 Saint-Gobain Abrasives, Inc. Hydrophilic and hydrophobic silane surface modification of abrasive grains
JP5619009B2 (ja) 2008-09-19 2014-11-05 キャボット マイクロエレクトロニクス コーポレイションCabot Microelectronics Corporation 低k誘電体のためのバリアースラリー
JP5312887B2 (ja) * 2008-09-24 2013-10-09 富士フイルム株式会社 研磨液
JP5632378B2 (ja) 2008-09-26 2014-11-26 ロディア オペレーションズRhodia Operations 化学機械研磨用研磨剤組成物及びその使用法
WO2010035613A1 (ja) * 2008-09-26 2010-04-01 扶桑化学工業株式会社 屈曲構造及び/又は分岐構造を持つシリカ二次粒子を含有するコロイダルシリカ及びその製造方法
US9382450B2 (en) 2009-01-20 2016-07-05 Cabot Corporation Compositions comprising silane modified metal oxides
US8119529B2 (en) 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
KR20130029441A (ko) 2009-08-19 2013-03-22 히타치가세이가부시끼가이샤 Cmp 연마액 및 연마 방법
JP2011216582A (ja) * 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Cmp研磨液及び研磨方法
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5844135B2 (ja) * 2010-12-24 2016-01-13 花王株式会社 研磨液組成物の製造方法
US8366059B2 (en) 2011-01-06 2013-02-05 GM Global Technology Operations LLC Position controlled cable guide clip
WO2014119301A1 (ja) * 2013-02-01 2014-08-07 株式会社フジミインコーポレーテッド 表面選択性研磨組成物

Also Published As

Publication number Publication date
US9309442B2 (en) 2016-04-12
TW201546252A (zh) 2015-12-16
EP3120380A4 (en) 2017-12-13
EP3120380B1 (en) 2019-03-06
EP3120380A1 (en) 2017-01-25
KR102390227B1 (ko) 2022-04-25
CN106133881B (zh) 2019-01-08
WO2015143270A1 (en) 2015-09-24
US20150267081A1 (en) 2015-09-24
JP2017517900A (ja) 2017-06-29
CN106133881A (zh) 2016-11-16
JP6616394B2 (ja) 2019-12-04
KR20160135767A (ko) 2016-11-28

Similar Documents

Publication Publication Date Title
JP6616394B2 (ja) タングステンのバフ研磨用組成物
CN106415796B (zh) 混合研磨剂型的钨化学机械抛光组合物
JP6612789B2 (ja) タングステンの化学機械研磨組成物
KR102408747B1 (ko) 혼합 마모제 텅스텐 cmp 조성물
TWI659078B (zh) 具有陽離子界面活性劑及環糊精的鎢加工漿液
KR102774705B1 (ko) 양이온성 계면활성제를 함유하는 텅스텐-가공 슬러리
JP2019206718A (ja) 銅バリアの化学機械研磨組成物
CN106103638A (zh) 用于钨化学机械抛光的组合物
CN106104763A (zh) 用于钨化学机械抛光的组合物
CN106103639A (zh) 用于钨化学机械抛光的组合物
JP2025531390A (ja) 硫黄含有アニオン性界面活性剤を含むタングステンcmp組成物