JP2017527446A5 - - Google Patents
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- Publication number
- JP2017527446A5 JP2017527446A5 JP2016574054A JP2016574054A JP2017527446A5 JP 2017527446 A5 JP2017527446 A5 JP 2017527446A5 JP 2016574054 A JP2016574054 A JP 2016574054A JP 2016574054 A JP2016574054 A JP 2016574054A JP 2017527446 A5 JP2017527446 A5 JP 2017527446A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- acid
- range
- abrasive particles
- alumina abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 17
- 230000001737 promoting effect Effects 0.000 claims description 16
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- 229920006318 anionic polymer Polymers 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- IRLPACMLTUPBCL-KQYNXXCUSA-N 5'-adenylyl sulfate Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](COP(O)(=O)OS(O)(=O)=O)[C@@H](O)[C@H]1O IRLPACMLTUPBCL-KQYNXXCUSA-N 0.000 claims description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 150000007524 organic acids Chemical class 0.000 claims description 7
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 claims description 6
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 239000008365 aqueous carrier Substances 0.000 claims description 6
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 6
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims description 6
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 6
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 6
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000008119 colloidal silica Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910021485 fumed silica Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 3
- 239000003082 abrasive agent Substances 0.000 claims 2
- 230000003796 beauty Effects 0.000 claims 1
- 235000005985 organic acids Nutrition 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462015084P | 2014-06-20 | 2014-06-20 | |
| US62/015,084 | 2014-06-20 | ||
| PCT/US2015/036477 WO2015195946A1 (en) | 2014-06-20 | 2015-06-18 | Cmp slurry compositions and methods for aluminum polishing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017527446A JP2017527446A (ja) | 2017-09-21 |
| JP2017527446A5 true JP2017527446A5 (enExample) | 2018-06-28 |
| JP6800418B2 JP6800418B2 (ja) | 2020-12-16 |
Family
ID=54869067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016574054A Active JP6800418B2 (ja) | 2014-06-20 | 2015-06-18 | アルミニウムの研磨のためのｃｍｐスラリー組成物及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20150368515A1 (enExample) |
| JP (1) | JP6800418B2 (enExample) |
| KR (2) | KR102783735B1 (enExample) |
| CN (1) | CN106661427B (enExample) |
| TW (1) | TWI561620B (enExample) |
| WO (1) | WO2015195946A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9359686B1 (en) | 2015-01-09 | 2016-06-07 | Apple Inc. | Processes to reduce interfacial enrichment of alloying elements under anodic oxide films and improve anodized appearance of heat treatable alloys |
| US20160289858A1 (en) * | 2015-04-03 | 2016-10-06 | Apple Inc. | Process to mitigate grain texture differential growth rates in mirror-finish anodized aluminum |
| US11352708B2 (en) | 2016-08-10 | 2022-06-07 | Apple Inc. | Colored multilayer oxide coatings |
| US11242614B2 (en) | 2017-02-17 | 2022-02-08 | Apple Inc. | Oxide coatings for providing corrosion resistance on parts with edges and convex features |
| US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| JP7034667B2 (ja) * | 2017-10-24 | 2022-03-14 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| KR102533083B1 (ko) * | 2017-12-18 | 2023-05-17 | 주식회사 케이씨텍 | 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 |
| US11549191B2 (en) | 2018-09-10 | 2023-01-10 | Apple Inc. | Corrosion resistance for anodized parts having convex surface features |
| CN113710761B (zh) * | 2019-04-17 | 2024-04-09 | Cmc材料有限责任公司 | 用于钨擦光应用的经表面涂覆的研磨剂颗粒 |
| CN111020590A (zh) * | 2019-11-25 | 2020-04-17 | 昆山兰博旺新材料技术服务有限公司 | 环保型铝合金化学抛光液 |
| JP7697781B2 (ja) * | 2020-03-25 | 2025-06-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法 |
| TWI883133B (zh) * | 2020-03-25 | 2025-05-11 | 日商福吉米股份有限公司 | 研磨用組合物、其製造方法、研磨方法及半導體基板的製造方法 |
| CN115198275B (zh) * | 2022-06-07 | 2024-02-09 | 湖北奥美伦科技有限公司 | 一种砂面铝合金掩蔽剂及其制备方法和应用 |
| CN117327450A (zh) * | 2023-09-21 | 2024-01-02 | 浙江芯秦微电子科技有限公司 | 一种抛光液的制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010046395A (ko) * | 1999-11-12 | 2001-06-15 | 안복현 | 연마용 조성물 |
| US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
| US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| CN101802125B (zh) * | 2007-09-21 | 2013-11-06 | 卡伯特微电子公司 | 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| GB2478250B (en) * | 2008-12-22 | 2014-09-03 | Kao Corp | Polishing liquid composition for magnetic-disk substrate |
| JP5613422B2 (ja) * | 2010-02-12 | 2014-10-22 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| US20130005149A1 (en) * | 2010-02-22 | 2013-01-03 | Basf Se | Chemical-mechanical planarization of substrates containing copper, ruthenium, and tantalum layers |
| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
| JP6050934B2 (ja) * | 2011-11-08 | 2016-12-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
-
2015
- 2015-05-12 TW TW104115074A patent/TWI561620B/zh active
- 2015-06-18 JP JP2016574054A patent/JP6800418B2/ja active Active
- 2015-06-18 CN CN201580033196.7A patent/CN106661427B/zh active Active
- 2015-06-18 US US14/743,583 patent/US20150368515A1/en not_active Abandoned
- 2015-06-18 KR KR1020227043670A patent/KR102783735B1/ko active Active
- 2015-06-18 KR KR1020177001259A patent/KR20170023080A/ko not_active Ceased
- 2015-06-18 WO PCT/US2015/036477 patent/WO2015195946A1/en not_active Ceased
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