JP2017527446A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017527446A5 JP2017527446A5 JP2016574054A JP2016574054A JP2017527446A5 JP 2017527446 A5 JP2017527446 A5 JP 2017527446A5 JP 2016574054 A JP2016574054 A JP 2016574054A JP 2016574054 A JP2016574054 A JP 2016574054A JP 2017527446 A5 JP2017527446 A5 JP 2017527446A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- acid
- range
- abrasive particles
- alumina abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 17
- 230000001737 promoting effect Effects 0.000 claims description 16
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- 229920006318 anionic polymer Polymers 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- IRLPACMLTUPBCL-KQYNXXCUSA-N 5'-adenylyl sulfate Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](COP(O)(=O)OS(O)(=O)=O)[C@@H](O)[C@H]1O IRLPACMLTUPBCL-KQYNXXCUSA-N 0.000 claims description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 150000007524 organic acids Chemical class 0.000 claims description 7
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 claims description 6
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 239000008365 aqueous carrier Substances 0.000 claims description 6
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 6
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims description 6
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 6
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 6
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000008119 colloidal silica Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910021485 fumed silica Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 3
- 239000003082 abrasive agent Substances 0.000 claims 2
- 230000003796 beauty Effects 0.000 claims 1
- 235000005985 organic acids Nutrition 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462015084P | 2014-06-20 | 2014-06-20 | |
| US62/015,084 | 2014-06-20 | ||
| PCT/US2015/036477 WO2015195946A1 (en) | 2014-06-20 | 2015-06-18 | Cmp slurry compositions and methods for aluminum polishing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017527446A JP2017527446A (ja) | 2017-09-21 |
| JP2017527446A5 true JP2017527446A5 (enExample) | 2018-06-28 |
| JP6800418B2 JP6800418B2 (ja) | 2020-12-16 |
Family
ID=54869067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016574054A Active JP6800418B2 (ja) | 2014-06-20 | 2015-06-18 | アルミニウムの研磨のためのｃｍｐスラリー組成物及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20150368515A1 (enExample) |
| JP (1) | JP6800418B2 (enExample) |
| KR (2) | KR102783735B1 (enExample) |
| CN (1) | CN106661427B (enExample) |
| TW (1) | TWI561620B (enExample) |
| WO (1) | WO2015195946A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9359686B1 (en) | 2015-01-09 | 2016-06-07 | Apple Inc. | Processes to reduce interfacial enrichment of alloying elements under anodic oxide films and improve anodized appearance of heat treatable alloys |
| US20160289858A1 (en) * | 2015-04-03 | 2016-10-06 | Apple Inc. | Process to mitigate grain texture differential growth rates in mirror-finish anodized aluminum |
| US11352708B2 (en) | 2016-08-10 | 2022-06-07 | Apple Inc. | Colored multilayer oxide coatings |
| US11242614B2 (en) | 2017-02-17 | 2022-02-08 | Apple Inc. | Oxide coatings for providing corrosion resistance on parts with edges and convex features |
| US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| JP7034667B2 (ja) * | 2017-10-24 | 2022-03-14 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| KR102533083B1 (ko) * | 2017-12-18 | 2023-05-17 | 주식회사 케이씨텍 | 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 |
| US11549191B2 (en) | 2018-09-10 | 2023-01-10 | Apple Inc. | Corrosion resistance for anodized parts having convex surface features |
| KR20210142756A (ko) | 2019-04-17 | 2021-11-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 텅스텐 버프 적용을 위한 표면 코팅된 연마제 입자 |
| CN111020590A (zh) * | 2019-11-25 | 2020-04-17 | 昆山兰博旺新材料技术服务有限公司 | 环保型铝合金化学抛光液 |
| JP7697781B2 (ja) * | 2020-03-25 | 2025-06-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法 |
| TWI883133B (zh) * | 2020-03-25 | 2025-05-11 | 日商福吉米股份有限公司 | 研磨用組合物、其製造方法、研磨方法及半導體基板的製造方法 |
| CN115198275B (zh) * | 2022-06-07 | 2024-02-09 | 湖北奥美伦科技有限公司 | 一种砂面铝合金掩蔽剂及其制备方法和应用 |
| CN117327450A (zh) * | 2023-09-21 | 2024-01-02 | 浙江芯秦微电子科技有限公司 | 一种抛光液的制备方法 |
| US20250376604A1 (en) * | 2024-06-05 | 2025-12-11 | Entegris, Inc. | Silica-based slurry for selective polishing of silicon nitride and silicon carbide |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010046395A (ko) * | 1999-11-12 | 2001-06-15 | 안복현 | 연마용 조성물 |
| US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
| US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| JP5519507B2 (ja) * | 2007-09-21 | 2014-06-11 | キャボット マイクロエレクトロニクス コーポレイション | アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法 |
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| CN102265339B (zh) * | 2008-12-22 | 2014-11-19 | 花王株式会社 | 磁盘基板用研磨液组合物 |
| JP5613422B2 (ja) * | 2010-02-12 | 2014-10-22 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| KR101839633B1 (ko) * | 2010-02-22 | 2018-03-16 | 바스프 에스이 | 구리, 루테늄 및 탄탈룸 층을 포함하는 기판의 화학 기계적 평탄화 |
| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
| JP6050934B2 (ja) * | 2011-11-08 | 2016-12-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
-
2015
- 2015-05-12 TW TW104115074A patent/TWI561620B/zh active
- 2015-06-18 KR KR1020227043670A patent/KR102783735B1/ko active Active
- 2015-06-18 JP JP2016574054A patent/JP6800418B2/ja active Active
- 2015-06-18 CN CN201580033196.7A patent/CN106661427B/zh active Active
- 2015-06-18 US US14/743,583 patent/US20150368515A1/en not_active Abandoned
- 2015-06-18 WO PCT/US2015/036477 patent/WO2015195946A1/en not_active Ceased
- 2015-06-18 KR KR1020177001259A patent/KR20170023080A/ko not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017527446A5 (enExample) | ||
| JP5957292B2 (ja) | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 | |
| KR102253294B1 (ko) | 산화규소, 질화규소 및 폴리실리콘 물질의 cmp를 위한 조성물 및 방법 | |
| JP2018500456A5 (enExample) | ||
| JP2006121101A5 (enExample) | ||
| JP2015201644A5 (enExample) | ||
| KR102589681B1 (ko) | 연마용 조성물 및 연마 방법 | |
| JP2009540575A5 (enExample) | ||
| TWI683896B (zh) | 研磨用組成物 | |
| TWI580767B (zh) | 鈷拋光加速劑 | |
| EP3122836A1 (en) | Mixed abrasive tungsten cmp composition | |
| KR20170074869A (ko) | 연마용 조성물 | |
| EP3406684B1 (en) | Polishing composition and method for polishing silicon substrate | |
| JP2013540849A5 (enExample) | ||
| JP2018513229A5 (enExample) | ||
| KR102480644B1 (ko) | 표면 처리 조성물, 그의 제조 방법, 및 이를 사용한 표면 처리 방법 | |
| CN1422314A (zh) | 用于优先除去氧化硅的系统 | |
| JP2010538457A5 (enExample) | ||
| JP2007088424A5 (enExample) | ||
| JP2012511251A5 (enExample) | ||
| CN107075310A (zh) | 钴凹陷控制剂 | |
| TW200703491A (en) | Composition for selectively polishing silicon nitride layer and polishing method employing it | |
| CN109716488A (zh) | 表面处理组合物、以及使用其的表面处理方法和半导体基板的制造方法 | |
| WO2009117070A3 (en) | Compositions for polishing aluminum/copper and titanium in damascene structures | |
| TW201708492A (zh) | 研磨用組成物及矽基板之研磨方法 |