JP2013540849A5 - - Google Patents
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- JP2013540849A5 JP2013540849A5 JP2013527714A JP2013527714A JP2013540849A5 JP 2013540849 A5 JP2013540849 A5 JP 2013540849A5 JP 2013527714 A JP2013527714 A JP 2013527714A JP 2013527714 A JP2013527714 A JP 2013527714A JP 2013540849 A5 JP2013540849 A5 JP 2013540849A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- aqueous polishing
- water
- aqueous
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 claims 14
- 238000000034 method Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229920001577 copolymer Polymers 0.000 claims 3
- 229920001519 homopolymer Polymers 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims 2
- 229910019142 PO4 Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 125000002947 alkylene group Chemical group 0.000 claims 2
- 125000000129 anionic group Chemical group 0.000 claims 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 239000002270 dispersing agent Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 2
- 239000010452 phosphate Substances 0.000 claims 2
- 229920001223 polyethylene glycol Polymers 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- AFINAILKDBCXMX-PBHICJAKSA-N (2s,3r)-2-amino-3-hydroxy-n-(4-octylphenyl)butanamide Chemical compound CCCCCCCCC1=CC=C(NC(=O)[C@@H](N)[C@@H](C)O)C=C1 AFINAILKDBCXMX-PBHICJAKSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 239000002202 Polyethylene glycol Substances 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 239000012736 aqueous medium Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000003002 pH adjusting agent Substances 0.000 claims 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920001451 polypropylene glycol Polymers 0.000 claims 1
- 229910052700 potassium Chemical group 0.000 claims 1
- 239000011591 potassium Chemical group 0.000 claims 1
- 239000011734 sodium Chemical group 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 229920003169 water-soluble polymer Polymers 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38071910P | 2010-09-08 | 2010-09-08 | |
| US61/380,719 | 2010-09-08 | ||
| PCT/IB2011/053867 WO2012032451A1 (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013540849A JP2013540849A (ja) | 2013-11-07 |
| JP2013540849A5 true JP2013540849A5 (enExample) | 2014-10-30 |
| JP5965906B2 JP5965906B2 (ja) | 2016-08-10 |
Family
ID=44773986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013527714A Expired - Fee Related JP5965906B2 (ja) | 2010-09-08 | 2011-09-05 | 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20130168348A1 (enExample) |
| EP (1) | EP2428541B1 (enExample) |
| JP (1) | JP5965906B2 (enExample) |
| KR (1) | KR101906135B1 (enExample) |
| CN (1) | CN103080256B (enExample) |
| IL (1) | IL224645A (enExample) |
| MY (1) | MY175638A (enExample) |
| RU (1) | RU2573672C2 (enExample) |
| SG (2) | SG11201606187RA (enExample) |
| TW (1) | TWI525164B (enExample) |
| WO (1) | WO2012032451A1 (enExample) |
Families Citing this family (30)
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| EP2625236B1 (en) | 2010-10-07 | 2017-12-13 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| SG190334A1 (en) | 2010-12-10 | 2013-06-28 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| JP6125507B2 (ja) | 2011-09-07 | 2017-05-10 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | グリコシドを含む化学機械研磨（ｃｍｐ）組成物 |
| SG11201403505UA (en) * | 2011-12-21 | 2014-07-30 | Basf Se | Method for manufacturing cmp composition and application thereof |
| CN104178033A (zh) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | 纳米二氧化铈抛光液组合物 |
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| EP3080240B1 (en) * | 2013-12-11 | 2024-10-16 | FujiFilm Electronic Materials USA, Inc. | Cleaning formulation for removing residues on surfaces |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
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| EP3323142B1 (en) * | 2015-07-13 | 2024-08-28 | CMC Materials LLC | Methods and compositions for processing dielectric substrate |
| KR101693278B1 (ko) * | 2015-09-25 | 2017-01-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
| KR101628878B1 (ko) * | 2015-09-25 | 2016-06-16 | 영창케미칼 주식회사 | Cmp용 슬러리 조성물 및 이를 이용한 연마방법 |
| KR101871569B1 (ko) * | 2016-02-25 | 2018-08-02 | 삼성에스디아이 주식회사 | 이방 도전성 필름 및 이에 의해 접속된 디스플레이 장치 |
| KR101827366B1 (ko) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
| US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| KR102677797B1 (ko) * | 2016-12-22 | 2024-06-24 | 주식회사 케이씨텍 | Sti 공정용 연마 슬러리 조성물 |
| JP6761339B2 (ja) | 2016-12-28 | 2020-09-23 | 花王株式会社 | 酸化セリウム砥粒 |
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| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| WO2018179061A1 (ja) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| CN108587478B (zh) * | 2018-07-03 | 2020-09-25 | 中国人民解放军国防科技大学 | 一种改性纳米二氧化硅复合抛光液及其应用 |
| KR102296085B1 (ko) | 2019-07-01 | 2021-09-01 | 남기호 | 스마트 트램폴린 및 스마트 트램폴린을 이용한 건강관리 시스템 |
| KR20220057561A (ko) * | 2019-09-04 | 2022-05-09 | 씨엠씨 머티리얼즈, 인코포레이티드 | 폴리실리콘 cmp용 조성물 및 방법 |
| TWI767355B (zh) * | 2019-10-24 | 2022-06-11 | 美商慧盛材料美國責任有限公司 | 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法 |
| JP2022061016A (ja) * | 2020-10-05 | 2022-04-15 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| JP7777017B2 (ja) * | 2021-03-30 | 2025-11-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物、及び窒化ケイ素を選択的に除去する方法 |
| CN113549399B (zh) * | 2021-08-03 | 2022-02-15 | 万华化学集团电子材料有限公司 | 适用于硅片粗抛光的化学机械抛光组合物及其应用 |
| KR102773634B1 (ko) | 2022-04-13 | 2025-02-25 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법 |
| CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
| CN116000782B (zh) * | 2022-12-27 | 2023-09-19 | 昂士特科技(深圳)有限公司 | 用于金属合金cmp的化学机械抛光组合物 |
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| JP4367494B2 (ja) * | 2007-02-09 | 2009-11-18 | 住友電気工業株式会社 | ＧａＡｓウエハの化学機械研磨方法 |
| EP2131389A4 (en) * | 2007-03-26 | 2011-06-22 | Jsr Corp | Aqueous dispersion for chemical-mechanical polishing and method for chemical-mechanical polishing for a semiconductor assembly |
| KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
-
2011
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/ko not_active Expired - Fee Related
- 2011-09-05 CN CN201180041503.8A patent/CN103080256B/zh not_active Expired - Fee Related
- 2011-09-05 RU RU2013115237/05A patent/RU2573672C2/ru not_active IP Right Cessation
- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en not_active Ceased
- 2011-09-05 SG SG11201606187RA patent/SG11201606187RA/en unknown
- 2011-09-05 MY MYPI2015002194A patent/MY175638A/en unknown
- 2011-09-05 EP EP11179985.4A patent/EP2428541B1/en not_active Not-in-force
- 2011-09-05 SG SG10201606566SA patent/SG10201606566SA/en unknown
- 2011-09-05 US US13/821,746 patent/US20130168348A1/en not_active Abandoned
- 2011-09-05 JP JP2013527714A patent/JP5965906B2/ja not_active Expired - Fee Related
- 2011-09-06 TW TW100132009A patent/TWI525164B/zh not_active IP Right Cessation
-
2013
- 2013-02-10 IL IL224645A patent/IL224645A/en active IP Right Grant
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