RU2573672C2 - Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния - Google Patents

Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния Download PDF

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Publication number
RU2573672C2
RU2573672C2 RU2013115237/05A RU2013115237A RU2573672C2 RU 2573672 C2 RU2573672 C2 RU 2573672C2 RU 2013115237/05 A RU2013115237/05 A RU 2013115237/05A RU 2013115237 A RU2013115237 A RU 2013115237A RU 2573672 C2 RU2573672 C2 RU 2573672C2
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Russia
Prior art keywords
acid
polishing composition
oxide
polysilicon
aqueous
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RU2013115237/05A
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English (en)
Russian (ru)
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RU2013115237A (ru
Inventor
Южуо ЛИ
Джеа-Джу ЧУ
Шиам Сундар ВЕНКАТАРАМАН
Вей Лан Уиллиам ЧИУ
Харви Уэйн ПИНДЕР
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Басф Се
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Publication of RU2013115237A publication Critical patent/RU2013115237A/ru
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Publication of RU2573672C2 publication Critical patent/RU2573672C2/ru

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2013115237/05A 2010-09-08 2011-09-05 Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния RU2573672C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38071910P 2010-09-08 2010-09-08
US61/380,719 2010-09-08
PCT/IB2011/053867 WO2012032451A1 (en) 2010-09-08 2011-09-05 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

Publications (2)

Publication Number Publication Date
RU2013115237A RU2013115237A (ru) 2014-10-20
RU2573672C2 true RU2573672C2 (ru) 2016-01-27

Family

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Family Applications (1)

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RU2013115237/05A RU2573672C2 (ru) 2010-09-08 2011-09-05 Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния

Country Status (11)

Country Link
US (1) US20130168348A1 (enExample)
EP (1) EP2428541B1 (enExample)
JP (1) JP5965906B2 (enExample)
KR (1) KR101906135B1 (enExample)
CN (1) CN103080256B (enExample)
IL (1) IL224645A (enExample)
MY (1) MY175638A (enExample)
RU (1) RU2573672C2 (enExample)
SG (2) SG11201606187RA (enExample)
TW (1) TWI525164B (enExample)
WO (1) WO2012032451A1 (enExample)

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KR102296085B1 (ko) 2019-07-01 2021-09-01 남기호 스마트 트램폴린 및 스마트 트램폴린을 이용한 건강관리 시스템
KR20220057561A (ko) * 2019-09-04 2022-05-09 씨엠씨 머티리얼즈, 인코포레이티드 폴리실리콘 cmp용 조성물 및 방법
TWI767355B (zh) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法
JP2022061016A (ja) * 2020-10-05 2022-04-15 花王株式会社 酸化珪素膜用研磨液組成物
JP7777017B2 (ja) * 2021-03-30 2025-11-27 株式会社フジミインコーポレーテッド 研磨用組成物、及び窒化ケイ素を選択的に除去する方法
CN113549399B (zh) * 2021-08-03 2022-02-15 万华化学集团电子材料有限公司 适用于硅片粗抛光的化学机械抛光组合物及其应用
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