JP4367494B2 - GaAsウエハの化学機械研磨方法 - Google Patents
GaAsウエハの化学機械研磨方法 Download PDFInfo
- Publication number
- JP4367494B2 JP4367494B2 JP2007030735A JP2007030735A JP4367494B2 JP 4367494 B2 JP4367494 B2 JP 4367494B2 JP 2007030735 A JP2007030735 A JP 2007030735A JP 2007030735 A JP2007030735 A JP 2007030735A JP 4367494 B2 JP4367494 B2 JP 4367494B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- chemical mechanical
- mechanical polishing
- stage
- gaas wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 253
- 239000000126 substance Substances 0.000 title claims description 99
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 5
- 239000007788 liquid Substances 0.000 claims description 59
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 18
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000008119 colloidal silica Substances 0.000 claims description 12
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 10
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 claims description 9
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 9
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 9
- 235000011152 sodium sulphate Nutrition 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 64
- 238000002474 experimental method Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000017550 sodium carbonate Nutrition 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
Claims (1)
- GaAsウエハを化学機械研磨装置に装填し、
水以外の組成の質量比として19〜22%のジクロロイソシアヌル酸、20〜31%のトリポリ燐酸ナトリウム、7〜8%の硫酸ナトリウム、2〜4%の炭酸ナトリウム、および40〜47%のコロイダルシリカを含む第1組成の化学機械研磨液を前記研磨装置に供給して第1段階の研磨を行い、
その後に、前記水以外の組成の質量比として23%のジクロロイソシアヌル酸、16%のトリポリ燐酸ナトリウム、8%の硫酸ナトリウム、3%の炭酸ナトリウム、および50%のコロイダルシリカを含む第2組成の化学機械研磨液を前記研磨装置に供給して第2段階の研磨を行うことを特徴とするGaAsウエハの化学機械研磨方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007030735A JP4367494B2 (ja) | 2007-02-09 | 2007-02-09 | GaAsウエハの化学機械研磨方法 |
TW096148706A TW200847259A (en) | 2007-02-09 | 2007-12-19 | Mechano-chemical polishing method for GaAs wafer |
KR1020080003895A KR20080074725A (ko) | 2007-02-09 | 2008-01-14 | GaAs 웨이퍼의 화학 기계 연마 방법 |
DE102008004441A DE102008004441A1 (de) | 2007-02-09 | 2008-01-15 | Mechano-chemisches Polierverfahren für GaAs-Wafer |
US12/010,342 US20080194182A1 (en) | 2007-02-09 | 2008-01-24 | Mechano-chemical polishing method for GaAs wafer |
CNA2008100086079A CN101239450A (zh) | 2007-02-09 | 2008-01-29 | 用于GaAs晶片的机械化学抛光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007030735A JP4367494B2 (ja) | 2007-02-09 | 2007-02-09 | GaAsウエハの化学機械研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008198724A JP2008198724A (ja) | 2008-08-28 |
JP4367494B2 true JP4367494B2 (ja) | 2009-11-18 |
Family
ID=39597745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007030735A Active JP4367494B2 (ja) | 2007-02-09 | 2007-02-09 | GaAsウエハの化学機械研磨方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080194182A1 (ja) |
JP (1) | JP4367494B2 (ja) |
KR (1) | KR20080074725A (ja) |
CN (1) | CN101239450A (ja) |
DE (1) | DE102008004441A1 (ja) |
TW (1) | TW200847259A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110371334B (zh) * | 2019-08-09 | 2021-09-10 | 普菱兴云智能科技(广州)有限公司 | 一种颗粒灌装生产线 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101775257A (zh) * | 2009-01-14 | 2010-07-14 | Axt公司 | 一种用于GaAs晶片的粗抛光溶液和粗抛光方法 |
CN101781526A (zh) * | 2009-01-15 | 2010-07-21 | Axt公司 | 用于GaAs晶片的化学抛光溶液和化学抛光方法 |
WO2012032451A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
JP5741497B2 (ja) | 2012-02-15 | 2015-07-01 | 信越半導体株式会社 | ウェーハの両面研磨方法 |
CN103100965B (zh) * | 2013-02-05 | 2015-07-01 | 中国电子科技集团公司第四十六研究所 | InP单晶片双面抛光方法及装置 |
CN107953152A (zh) * | 2017-12-19 | 2018-04-24 | 北京创昱科技有限公司 | 一种GaAs晶片的精密抛光方法 |
US20210024781A1 (en) * | 2018-03-28 | 2021-01-28 | Fujimi Incorporated | Gallium compound-based semiconductor substrate polishing composition |
CN109370444A (zh) * | 2018-12-12 | 2019-02-22 | 中国电子科技集团公司第四十六研究所 | 一种适用于砷化镓晶片抛光的抛光药液 |
CN115386299B (zh) * | 2022-08-16 | 2023-08-22 | 威科赛乐微电子股份有限公司 | 一种砷化镓衬底抛光液及其应用 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
JP3077665B2 (ja) | 1998-03-30 | 2000-08-14 | 住友電気工業株式会社 | 第iii−v族化合物半導体の研磨剤とその供給方法 |
JP2002018705A (ja) | 2000-07-07 | 2002-01-22 | Hitachi Cable Ltd | 半導体ウエーハの両面同時ポリッシュ方法 |
JP4311247B2 (ja) | 2004-03-19 | 2009-08-12 | 日立電線株式会社 | 研磨用砥粒、研磨剤、研磨液の製造方法 |
-
2007
- 2007-02-09 JP JP2007030735A patent/JP4367494B2/ja active Active
- 2007-12-19 TW TW096148706A patent/TW200847259A/zh unknown
-
2008
- 2008-01-14 KR KR1020080003895A patent/KR20080074725A/ko not_active Application Discontinuation
- 2008-01-15 DE DE102008004441A patent/DE102008004441A1/de not_active Withdrawn
- 2008-01-24 US US12/010,342 patent/US20080194182A1/en not_active Abandoned
- 2008-01-29 CN CNA2008100086079A patent/CN101239450A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110371334B (zh) * | 2019-08-09 | 2021-09-10 | 普菱兴云智能科技(广州)有限公司 | 一种颗粒灌装生产线 |
Also Published As
Publication number | Publication date |
---|---|
JP2008198724A (ja) | 2008-08-28 |
TW200847259A (en) | 2008-12-01 |
DE102008004441A1 (de) | 2008-08-14 |
US20080194182A1 (en) | 2008-08-14 |
CN101239450A (zh) | 2008-08-13 |
KR20080074725A (ko) | 2008-08-13 |
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