SG11201606187RA - Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon filmsInfo
- Publication number
- SG11201606187RA SG11201606187RA SG11201606187RA SG11201606187RA SG11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA SG 11201606187R A SG11201606187R A SG 11201606187RA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon oxide
- containing silicon
- oxide dielectric
- substrates containing
- polysilicon films
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38071910P | 2010-09-08 | 2010-09-08 | |
| PCT/IB2011/053867 WO2012032451A1 (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201606187RA true SG11201606187RA (en) | 2016-09-29 |
Family
ID=44773986
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606187RA SG11201606187RA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| SG10201606566SA SG10201606566SA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606566SA SG10201606566SA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20130168348A1 (enExample) |
| EP (1) | EP2428541B1 (enExample) |
| JP (1) | JP5965906B2 (enExample) |
| KR (1) | KR101906135B1 (enExample) |
| CN (1) | CN103080256B (enExample) |
| IL (1) | IL224645A (enExample) |
| MY (1) | MY175638A (enExample) |
| RU (1) | RU2573672C2 (enExample) |
| SG (2) | SG11201606187RA (enExample) |
| TW (1) | TWI525164B (enExample) |
| WO (1) | WO2012032451A1 (enExample) |
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| SG190334A1 (en) | 2010-12-10 | 2013-06-28 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| JP6125507B2 (ja) | 2011-09-07 | 2017-05-10 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | グリコシドを含む化学機械研磨（ｃｍｐ）組成物 |
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| CN102965025B (zh) | 2005-11-11 | 2014-10-29 | 日立化成株式会社 | 氧化硅用研磨剂、其用途以及研磨方法 |
| CN101374922B (zh) | 2006-01-25 | 2013-06-12 | Lg化学株式会社 | 用于抛光半导体晶片的cmp浆料及使用该浆料的方法 |
| US8524111B2 (en) * | 2006-01-31 | 2013-09-03 | Hitachi Chemical Company, Ltd. | CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method |
| US20070264827A1 (en) * | 2006-05-09 | 2007-11-15 | Promos Technologies Pte. Ltd. | Method for achieving uniform chemical mechanical polishing in integrated circuit manufacturing |
| KR100829594B1 (ko) | 2006-10-10 | 2008-05-14 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법 |
| US9120952B2 (en) | 2006-10-27 | 2015-09-01 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (CMP) processing |
| JP2008186898A (ja) * | 2007-01-29 | 2008-08-14 | Nissan Chem Ind Ltd | 研磨用組成物 |
| JP4367494B2 (ja) * | 2007-02-09 | 2009-11-18 | 住友電気工業株式会社 | ＧａＡｓウエハの化学機械研磨方法 |
| EP2131389A4 (en) * | 2007-03-26 | 2011-06-22 | Jsr Corp | Aqueous dispersion for chemical-mechanical polishing and method for chemical-mechanical polishing for a semiconductor assembly |
| KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
-
2011
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/ko not_active Expired - Fee Related
- 2011-09-05 CN CN201180041503.8A patent/CN103080256B/zh not_active Expired - Fee Related
- 2011-09-05 RU RU2013115237/05A patent/RU2573672C2/ru not_active IP Right Cessation
- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en not_active Ceased
- 2011-09-05 SG SG11201606187RA patent/SG11201606187RA/en unknown
- 2011-09-05 MY MYPI2015002194A patent/MY175638A/en unknown
- 2011-09-05 EP EP11179985.4A patent/EP2428541B1/en not_active Not-in-force
- 2011-09-05 SG SG10201606566SA patent/SG10201606566SA/en unknown
- 2011-09-05 US US13/821,746 patent/US20130168348A1/en not_active Abandoned
- 2011-09-05 JP JP2013527714A patent/JP5965906B2/ja not_active Expired - Fee Related
- 2011-09-06 TW TW100132009A patent/TWI525164B/zh not_active IP Right Cessation
-
2013
- 2013-02-10 IL IL224645A patent/IL224645A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20130168348A1 (en) | 2013-07-04 |
| TWI525164B (zh) | 2016-03-11 |
| KR101906135B1 (ko) | 2018-10-10 |
| RU2013115237A (ru) | 2014-10-20 |
| MY175638A (en) | 2020-07-03 |
| RU2573672C2 (ru) | 2016-01-27 |
| JP2013540849A (ja) | 2013-11-07 |
| EP2428541A1 (en) | 2012-03-14 |
| EP2428541B1 (en) | 2019-03-06 |
| TW201226491A (en) | 2012-07-01 |
| KR20130102587A (ko) | 2013-09-17 |
| CN103080256B (zh) | 2015-06-24 |
| WO2012032451A1 (en) | 2012-03-15 |
| JP5965906B2 (ja) | 2016-08-10 |
| CN103080256A (zh) | 2013-05-01 |
| IL224645A (en) | 2017-11-30 |
| SG10201606566SA (en) | 2016-09-29 |
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