CN103080256A - 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法 - Google Patents
用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法 Download PDFInfo
- Publication number
- CN103080256A CN103080256A CN2011800415038A CN201180041503A CN103080256A CN 103080256 A CN103080256 A CN 103080256A CN 2011800415038 A CN2011800415038 A CN 2011800415038A CN 201180041503 A CN201180041503 A CN 201180041503A CN 103080256 A CN103080256 A CN 103080256A
- Authority
- CN
- China
- Prior art keywords
- acid
- polishing composition
- oxide
- polysilicon
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 99
- 238000005498 polishing Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 65
- 229920005591 polysilicon Polymers 0.000 title claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 53
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 14
- 230000008569 process Effects 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 10
- 239000010452 phosphate Substances 0.000 claims abstract description 10
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 9
- 229920001519 homopolymer Polymers 0.000 claims abstract description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 70
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 68
- -1 anion phosphate Chemical class 0.000 claims description 53
- 150000001875 compounds Chemical class 0.000 claims description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 36
- 239000006061 abrasive grain Substances 0.000 claims description 31
- 150000004767 nitrides Chemical class 0.000 claims description 29
- 239000003795 chemical substances by application Substances 0.000 claims description 25
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 12
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 9
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 150000003016 phosphoric acids Chemical class 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 239000013543 active substance Substances 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 6
- 238000009833 condensation Methods 0.000 claims description 6
- 230000005494 condensation Effects 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 239000003002 pH adjusting agent Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 238000000018 DNA microarray Methods 0.000 claims description 5
- 239000008139 complexing agent Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 125000005702 oxyalkylene group Chemical group 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 239000012313 reversal agent Substances 0.000 claims description 4
- 239000011557 critical solution Substances 0.000 claims description 3
- 239000002655 kraft paper Substances 0.000 claims description 3
- 239000001205 polyphosphate Substances 0.000 claims description 3
- 235000011176 polyphosphates Nutrition 0.000 claims description 3
- 239000003352 sequestering agent Substances 0.000 claims description 3
- 150000005846 sugar alcohols Polymers 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 150000001457 metallic cations Chemical class 0.000 claims description 2
- 125000005341 metaphosphate group Chemical group 0.000 claims description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims 1
- 229920001223 polyethylene glycol Polymers 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 abstract description 6
- 239000002270 dispersing agent Substances 0.000 abstract description 4
- 125000000129 anionic group Chemical group 0.000 abstract description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract description 2
- 125000002947 alkylene group Chemical group 0.000 abstract 1
- 239000012736 aqueous medium Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 59
- 239000002585 base Substances 0.000 description 49
- 239000002253 acid Substances 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 36
- 239000000377 silicon dioxide Substances 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 229960001866 silicon dioxide Drugs 0.000 description 16
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 15
- 150000003839 salts Chemical class 0.000 description 15
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 239000004743 Polypropylene Substances 0.000 description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000002950 deficient Effects 0.000 description 9
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 8
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 8
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 6
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229920002125 Sokalan® Polymers 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 235000019253 formic acid Nutrition 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229930182817 methionine Natural products 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- 239000004584 polyacrylic acid Substances 0.000 description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 6
- 229960002429 proline Drugs 0.000 description 6
- 229940095064 tartrate Drugs 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 description 5
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 5
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 5
- XUYPXLNMDZIRQH-LURJTMIESA-N N-acetyl-L-methionine Chemical compound CSCC[C@@H](C(O)=O)NC(C)=O XUYPXLNMDZIRQH-LURJTMIESA-N 0.000 description 5
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 5
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000004475 Arginine Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 4
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- OPTASPLRGRRNAP-UHFFFAOYSA-N cytosine Chemical compound NC=1C=CNC(=O)N=1 OPTASPLRGRRNAP-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000001530 fumaric acid Substances 0.000 description 4
- 229960002989 glutamic acid Drugs 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 229920001983 poloxamer Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 4
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 4
- 235000019832 sodium triphosphate Nutrition 0.000 description 4
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical class NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 4
- 229940124530 sulfonamide Drugs 0.000 description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 4
- 229940005605 valeric acid Drugs 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 3
- DMKKMGYBLFUGTO-UHFFFAOYSA-N 2-methyloxirane;oxirane Chemical compound C1CO1.C1CO1.CC1CO1 DMKKMGYBLFUGTO-UHFFFAOYSA-N 0.000 description 3
- BRARRAHGNDUELT-UHFFFAOYSA-N 3-hydroxypicolinic acid Chemical compound OC(=O)C1=NC=CC=C1O BRARRAHGNDUELT-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- 239000004471 Glycine Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 3
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical class SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 241001460678 Napo <wasp> Species 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 229940024606 amino acid Drugs 0.000 description 3
- 150000001414 amino alcohols Chemical class 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 235000003704 aspartic acid Nutrition 0.000 description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 3
- 235000010980 cellulose Nutrition 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 239000011246 composite particle Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 3
- 229960003151 mercaptamine Drugs 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- 229920000428 triblock copolymer Polymers 0.000 description 3
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 3
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 description 3
- PBLZLIFKVPJDCO-UHFFFAOYSA-N 12-aminododecanoic acid Chemical compound NCCCCCCCCCCCC(O)=O PBLZLIFKVPJDCO-UHFFFAOYSA-N 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 2
- UFBJCMHMOXMLKC-UHFFFAOYSA-N 2,4-dinitrophenol Chemical compound OC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O UFBJCMHMOXMLKC-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 2
- OQEBBZSWEGYTPG-UHFFFAOYSA-N 3-aminobutanoic acid Chemical compound CC(N)CC(O)=O OQEBBZSWEGYTPG-UHFFFAOYSA-N 0.000 description 2
- CUYKNJBYIJFRCU-UHFFFAOYSA-N 3-aminopyridine Chemical compound NC1=CC=CN=C1 CUYKNJBYIJFRCU-UHFFFAOYSA-N 0.000 description 2
- IJFXRHURBJZNAO-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 2
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 2
- UHBIKXOBLZWFKM-UHFFFAOYSA-N 8-hydroxy-2-quinolinecarboxylic acid Chemical compound C1=CC=C(O)C2=NC(C(=O)O)=CC=C21 UHBIKXOBLZWFKM-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- DGMPVYSXXIOGJY-UHFFFAOYSA-N Fusaric acid Chemical compound CCCCC1=CC=C(C(O)=O)N=C1 DGMPVYSXXIOGJY-UHFFFAOYSA-N 0.000 description 2
- NYHBQMYGNKIUIF-UUOKFMHZSA-N Guanosine Chemical compound C1=NC=2C(=O)NC(N)=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O NYHBQMYGNKIUIF-UUOKFMHZSA-N 0.000 description 2
- NTYJJOPFIAHURM-UHFFFAOYSA-N Histamine Chemical compound NCCC1=CN=CN1 NTYJJOPFIAHURM-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000004373 Pullulan Substances 0.000 description 2
- 229920001218 Pullulan Polymers 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 229920002359 Tetronic® Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 235000010443 alginic acid Nutrition 0.000 description 2
- 229920000615 alginic acid Polymers 0.000 description 2
- WQZGKKKJIJFFOK-PQMKYFCFSA-N alpha-D-mannose Chemical compound OC[C@H]1O[C@H](O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-PQMKYFCFSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 235000001014 amino acid Nutrition 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 239000008346 aqueous phase Substances 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical compound C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- CUBCNYWQJHBXIY-UHFFFAOYSA-N benzoic acid;2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1O CUBCNYWQJHBXIY-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229960004106 citric acid Drugs 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- MLIREBYILWEBDM-UHFFFAOYSA-N cyanoacetic acid Chemical compound OC(=O)CC#N MLIREBYILWEBDM-UHFFFAOYSA-N 0.000 description 2
- LJOODBDWMQKMFB-UHFFFAOYSA-N cyclohexylacetic acid Chemical compound OC(=O)CC1CCCCC1 LJOODBDWMQKMFB-UHFFFAOYSA-N 0.000 description 2
- UFULAYFCSOUIOV-UHFFFAOYSA-N cysteamine Chemical compound NCCS UFULAYFCSOUIOV-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- GJQPMPFPNINLKP-UHFFFAOYSA-N diclofenamide Chemical compound NS(=O)(=O)C1=CC(Cl)=C(Cl)C(S(N)(=O)=O)=C1 GJQPMPFPNINLKP-UHFFFAOYSA-N 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- QMMFVYPAHWMCMS-UHFFFAOYSA-N dimethyl monosulfide Natural products CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 229940050410 gluconate Drugs 0.000 description 2
- 229950006191 gluconic acid Drugs 0.000 description 2
- YMAWOPBAYDPSLA-UHFFFAOYSA-N glycylglycine Chemical compound [NH3+]CC(=O)NCC([O-])=O YMAWOPBAYDPSLA-UHFFFAOYSA-N 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 229940049920 malate Drugs 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 2
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 2
- HYWYRSMBCFDLJT-UHFFFAOYSA-N nimesulide Chemical compound CS(=O)(=O)NC1=CC=C([N+]([O-])=O)C=C1OC1=CC=CC=C1 HYWYRSMBCFDLJT-UHFFFAOYSA-N 0.000 description 2
- 229960000965 nimesulide Drugs 0.000 description 2
- 239000000123 paper Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 2
- 150000003009 phosphonic acids Chemical class 0.000 description 2
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 2
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 235000018102 proteins Nutrition 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 102000004169 proteins and genes Human genes 0.000 description 2
- 235000019423 pullulan Nutrition 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- WRHZVMBBRYBTKZ-UHFFFAOYSA-N pyrrole-2-carboxylic acid Chemical compound OC(=O)C1=CC=CN1 WRHZVMBBRYBTKZ-UHFFFAOYSA-N 0.000 description 2
- 229940107700 pyruvic acid Drugs 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 2
- QZAYGJVTTNCVMB-UHFFFAOYSA-N serotonin Chemical compound C1=C(O)C=C2C(CCN)=CNC2=C1 QZAYGJVTTNCVMB-UHFFFAOYSA-N 0.000 description 2
- 239000001488 sodium phosphate Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- SKIVFJLNDNKQPD-UHFFFAOYSA-N sulfacetamide Chemical compound CC(=O)NS(=O)(=O)C1=CC=C(N)C=C1 SKIVFJLNDNKQPD-UHFFFAOYSA-N 0.000 description 2
- 229960002673 sulfacetamide Drugs 0.000 description 2
- DZQVFHSCSRACSX-UHFFFAOYSA-N sulfaperin Chemical compound N1=CC(C)=CN=C1NS(=O)(=O)C1=CC=C(N)C=C1 DZQVFHSCSRACSX-UHFFFAOYSA-N 0.000 description 2
- 229960000277 sulfaperin Drugs 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- CDQDMLWGTVLQEE-UHFFFAOYSA-N (1-methylimidazol-2-yl)methanol Chemical compound CN1C=CN=C1CO CDQDMLWGTVLQEE-UHFFFAOYSA-N 0.000 description 1
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical class [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 description 1
- NIONDZDPPYHYKY-SNAWJCMRSA-N (2E)-hexenoic acid Chemical compound CCC\C=C\C(O)=O NIONDZDPPYHYKY-SNAWJCMRSA-N 0.000 description 1
- VJXNQJXQILTYCF-UHFFFAOYSA-N (4-aminophenoxy)arsonic acid Chemical compound NC1=CC=C(O[As](O)(O)=O)C=C1 VJXNQJXQILTYCF-UHFFFAOYSA-N 0.000 description 1
- NWXMGUDVXFXRIG-WESIUVDSSA-N (4s,4as,5as,6s,12ar)-4-(dimethylamino)-1,6,10,11,12a-pentahydroxy-6-methyl-3,12-dioxo-4,4a,5,5a-tetrahydrotetracene-2-carboxamide Chemical compound C1=CC=C2[C@](O)(C)[C@H]3C[C@H]4[C@H](N(C)C)C(=O)C(C(N)=O)=C(O)[C@@]4(O)C(=O)C3=C(O)C2=C1O NWXMGUDVXFXRIG-WESIUVDSSA-N 0.000 description 1
- NQBWNECTZUOWID-UHFFFAOYSA-N (E)-cinnamyl (E)-cinnamate Natural products C=1C=CC=CC=1C=CC(=O)OCC=CC1=CC=CC=C1 NQBWNECTZUOWID-UHFFFAOYSA-N 0.000 description 1
- MTXSIJUGVMTTMU-JTQLQIEISA-N (S)-anabasine Chemical compound N1CCCC[C@H]1C1=CC=CN=C1 MTXSIJUGVMTTMU-JTQLQIEISA-N 0.000 description 1
- MYKUKUCHPMASKF-VIFPVBQESA-N (S)-nornicotine Chemical compound C1CCN[C@@H]1C1=CC=CN=C1 MYKUKUCHPMASKF-VIFPVBQESA-N 0.000 description 1
- DEVUYWTZRXOMSI-UHFFFAOYSA-N (sulfamoylamino)benzene Chemical compound NS(=O)(=O)NC1=CC=CC=C1 DEVUYWTZRXOMSI-UHFFFAOYSA-N 0.000 description 1
- DHBZRQXIRAEMRO-UHFFFAOYSA-N 1,1,2,2-tetramethylhydrazine Chemical compound CN(C)N(C)C DHBZRQXIRAEMRO-UHFFFAOYSA-N 0.000 description 1
- QWGIINOTSOHDFH-UHFFFAOYSA-N 1,3-dihydroimidazo[2,1-a]isoindol-2-one Chemical compound C1=C2C=CC=CC2=C2N1CC(=O)N2 QWGIINOTSOHDFH-UHFFFAOYSA-N 0.000 description 1
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 description 1
- PUCYIVFXTPWJDD-UHFFFAOYSA-N 1,6-dihydroxycyclohexa-2,4-dienecarboxylic acid Chemical compound OC1C=CC=CC1(O)C(O)=O PUCYIVFXTPWJDD-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- QPKNDHZQPGMLCJ-UHFFFAOYSA-N 1-(3-aminophenyl)ethanol Chemical compound CC(O)C1=CC=CC(N)=C1 QPKNDHZQPGMLCJ-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 description 1
- DLOLXKMKUIJUIX-UHFFFAOYSA-N 1-cyclohexyl-2,3-dihydropyrrole Chemical compound C1=CCCN1C1CCCCC1 DLOLXKMKUIJUIX-UHFFFAOYSA-N 0.000 description 1
- ZRECPFOSZXDFDT-UHFFFAOYSA-N 1-decylpyrrolidin-2-one Chemical compound CCCCCCCCCCN1CCCC1=O ZRECPFOSZXDFDT-UHFFFAOYSA-N 0.000 description 1
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical class CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 1
- VPUAYOJTHRDUTK-UHFFFAOYSA-N 1-ethylpyrrole Chemical compound CCN1C=CC=C1 VPUAYOJTHRDUTK-UHFFFAOYSA-N 0.000 description 1
- WRNAVSFPKQSYQC-UHFFFAOYSA-N 1-hexadecylpyrrolidin-2-one Chemical compound CCCCCCCCCCCCCCCCN1CCCC1=O WRNAVSFPKQSYQC-UHFFFAOYSA-N 0.000 description 1
- BAWUFGWWCWMUNU-UHFFFAOYSA-N 1-hexylpyrrolidin-2-one Chemical compound CCCCCCN1CCCC1=O BAWUFGWWCWMUNU-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- LNOKAIMHDJWRDG-UHFFFAOYSA-N 1-octadecylpyrrolidin-2-one Chemical compound CCCCCCCCCCCCCCCCCCN1CCCC1=O LNOKAIMHDJWRDG-UHFFFAOYSA-N 0.000 description 1
- ZOMATQMEHRJKLO-UHFFFAOYSA-N 1h-imidazol-2-ylmethanol Chemical compound OCC1=NC=CN1 ZOMATQMEHRJKLO-UHFFFAOYSA-N 0.000 description 1
- RABBMOYULJIAFU-UHFFFAOYSA-N 1h-pyrrole;thiophene Chemical class C=1C=CNC=1.C=1C=CSC=1 RABBMOYULJIAFU-UHFFFAOYSA-N 0.000 description 1
- JXBKZAYVMSNKHA-UHFFFAOYSA-N 1h-tetrazol-1-ium-5-olate Chemical compound OC=1N=NNN=1 JXBKZAYVMSNKHA-UHFFFAOYSA-N 0.000 description 1
- YPJUNDFVDDCYIH-UHFFFAOYSA-M 2,2,3,3,4,4,4-heptafluorobutanoate Chemical compound [O-]C(=O)C(F)(F)C(F)(F)C(F)(F)F YPJUNDFVDDCYIH-UHFFFAOYSA-M 0.000 description 1
- OMGHIGVFLOPEHJ-UHFFFAOYSA-N 2,5-dihydro-1h-pyrrol-1-ium-2-carboxylate Chemical compound OC(=O)C1NCC=C1 OMGHIGVFLOPEHJ-UHFFFAOYSA-N 0.000 description 1
- SYOANZBNGDEJFH-UHFFFAOYSA-N 2,5-dihydro-1h-triazole Chemical compound C1NNN=C1 SYOANZBNGDEJFH-UHFFFAOYSA-N 0.000 description 1
- GOJFAKBEASOYNM-UHFFFAOYSA-N 2-(2-aminophenoxy)aniline Chemical compound NC1=CC=CC=C1OC1=CC=CC=C1N GOJFAKBEASOYNM-UHFFFAOYSA-N 0.000 description 1
- CLLLODNOQBVIMS-UHFFFAOYSA-N 2-(2-methoxyethoxy)acetic acid Chemical compound COCCOCC(O)=O CLLLODNOQBVIMS-UHFFFAOYSA-N 0.000 description 1
- PLXBWEPPAAQASG-UHFFFAOYSA-N 2-(Dimethylamino)acetonitrile Chemical compound CN(C)CC#N PLXBWEPPAAQASG-UHFFFAOYSA-N 0.000 description 1
- YBDSNEVSFQMCTL-UHFFFAOYSA-N 2-(diethylamino)ethanethiol Chemical compound CCN(CC)CCS YBDSNEVSFQMCTL-UHFFFAOYSA-N 0.000 description 1
- KKFXHYYEYJRTCE-UHFFFAOYSA-N 2-(diethylamino)propanenitrile Chemical compound CCN(CC)C(C)C#N KKFXHYYEYJRTCE-UHFFFAOYSA-N 0.000 description 1
- DENMGZODXQRYAR-UHFFFAOYSA-N 2-(dimethylamino)ethanethiol Chemical compound CN(C)CCS DENMGZODXQRYAR-UHFFFAOYSA-N 0.000 description 1
- AUABZJZJXPSZCN-UHFFFAOYSA-N 2-(dimethylamino)phenol Chemical compound CN(C)C1=CC=CC=C1O AUABZJZJXPSZCN-UHFFFAOYSA-N 0.000 description 1
- QWQYQGBSIFODKK-UHFFFAOYSA-N 2-(ethylaminomethyl)propanedinitrile Chemical compound CCNCC(C#N)C#N QWQYQGBSIFODKK-UHFFFAOYSA-N 0.000 description 1
- ZGEXYNBHYVEWKT-UHFFFAOYSA-N 2-(hydroxymethyl)-5-phenylmethoxypyran-4-one Chemical compound O1C(CO)=CC(=O)C(OCC=2C=CC=CC=2)=C1 ZGEXYNBHYVEWKT-UHFFFAOYSA-N 0.000 description 1
- RILLZYSZSDGYGV-UHFFFAOYSA-N 2-(propan-2-ylamino)ethanol Chemical compound CC(C)NCCO RILLZYSZSDGYGV-UHFFFAOYSA-N 0.000 description 1
- QACKMXGIVCKHSR-UHFFFAOYSA-N 2-(propan-2-ylamino)propanenitrile Chemical compound CC(C)NC(C)C#N QACKMXGIVCKHSR-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- MIZIOHLLYXVEHJ-UHFFFAOYSA-N 2-[benzyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CC1=CC=CC=C1 MIZIOHLLYXVEHJ-UHFFFAOYSA-N 0.000 description 1
- YNHTVQAHPKWIGG-UHFFFAOYSA-N 2-aminoacetic acid;4-aminobutanoic acid Chemical compound NCC(O)=O.NCCCC(O)=O YNHTVQAHPKWIGG-UHFFFAOYSA-N 0.000 description 1
- VMKPDXOZTSISIW-UHFFFAOYSA-N 2-aminobenzenecarbohydroxamic acid Chemical compound NC1=CC=CC=C1C(=O)NO VMKPDXOZTSISIW-UHFFFAOYSA-N 0.000 description 1
- YAZSBRQTAHVVGE-UHFFFAOYSA-N 2-aminobenzenesulfonamide Chemical compound NC1=CC=CC=C1S(N)(=O)=O YAZSBRQTAHVVGE-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- XRXMNWGCKISMOH-UHFFFAOYSA-N 2-bromobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1Br XRXMNWGCKISMOH-UHFFFAOYSA-N 0.000 description 1
- OHCJMDUSHFIIQM-UHFFFAOYSA-N 2-chloro-n-hydroxybenzamide Chemical compound ONC(=O)C1=CC=CC=C1Cl OHCJMDUSHFIIQM-UHFFFAOYSA-N 0.000 description 1
- PWOBDMNCYMQTCE-UHFFFAOYSA-N 2-chlorobenzenethiol Chemical compound SC1=CC=CC=C1Cl PWOBDMNCYMQTCE-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- JJJOZVFVARQUJV-UHFFFAOYSA-N 2-ethylhexylphosphonic acid Chemical compound CCCCC(CC)CP(O)(O)=O JJJOZVFVARQUJV-UHFFFAOYSA-N 0.000 description 1
- XIGPZJPFILCQSC-UHFFFAOYSA-N 2-fluoro-n-hydroxybenzamide Chemical compound ONC(=O)C1=CC=CC=C1F XIGPZJPFILCQSC-UHFFFAOYSA-N 0.000 description 1
- BWLBGMIXKSTLSX-UHFFFAOYSA-M 2-hydroxyisobutyrate Chemical compound CC(C)(O)C([O-])=O BWLBGMIXKSTLSX-UHFFFAOYSA-M 0.000 description 1
- PGTISPYIJZXZSE-UHFFFAOYSA-N 2-methylpent-2-enamide Chemical compound CCC=C(C)C(N)=O PGTISPYIJZXZSE-UHFFFAOYSA-N 0.000 description 1
- YZVWMFBVTTUSAW-UHFFFAOYSA-N 2-morpholin-4-ylethanethiol Chemical compound SCCN1CCOCC1 YZVWMFBVTTUSAW-UHFFFAOYSA-N 0.000 description 1
- UOBYKYZJUGYBDK-UHFFFAOYSA-N 2-naphthoic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC=C21 UOBYKYZJUGYBDK-UHFFFAOYSA-N 0.000 description 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 description 1
- LXNAJQBFIIYIIS-UHFFFAOYSA-N 2-piperidin-1-ylethanethiol Chemical class SCCN1CCCCC1 LXNAJQBFIIYIIS-UHFFFAOYSA-N 0.000 description 1
- GDMZHPUPLWQIBD-UHFFFAOYSA-N 2-pyrrol-1-ylaniline Chemical class NC1=CC=CC=C1N1C=CC=C1 GDMZHPUPLWQIBD-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- JVQHRYVXOWBSNS-UHFFFAOYSA-N 3,3-dimethylpyrrolidine-2,5-dione Chemical compound CC1(C)CC(=O)NC1=O JVQHRYVXOWBSNS-UHFFFAOYSA-N 0.000 description 1
- BRMWTNUJHUMWMS-UHFFFAOYSA-N 3-Methylhistidine Natural products CN1C=NC(CC(N)C(O)=O)=C1 BRMWTNUJHUMWMS-UHFFFAOYSA-N 0.000 description 1
- ULUIMLJNTCECJU-UHFFFAOYSA-N 3-amino-4-hydroxybenzenesulfonate;hydron Chemical compound NC1=CC(S(O)(=O)=O)=CC=C1O ULUIMLJNTCECJU-UHFFFAOYSA-N 0.000 description 1
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- YERHKEWRHQIXFY-UHFFFAOYSA-N 3-benzoylpyridine-2-carboxylic acid Chemical compound OC(=O)C1=NC=CC=C1C(=O)C1=CC=CC=C1 YERHKEWRHQIXFY-UHFFFAOYSA-N 0.000 description 1
- XTMUXJBJCMRWPG-UHFFFAOYSA-N 3-chloropyridine-2-carboxylic acid Chemical class OC(=O)C1=NC=CC=C1Cl XTMUXJBJCMRWPG-UHFFFAOYSA-N 0.000 description 1
- WRPMHFHMXOUTTI-UHFFFAOYSA-N 3-ethylhex-2-enoic acid Chemical compound CCCC(CC)=CC(O)=O WRPMHFHMXOUTTI-UHFFFAOYSA-N 0.000 description 1
- LMHIBYREWJHKNZ-UHFFFAOYSA-N 3-methylpyridine-2-carboxylic acid Chemical compound CC1=CC=CN=C1C(O)=O LMHIBYREWJHKNZ-UHFFFAOYSA-N 0.000 description 1
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 description 1
- ZXVONLUNISGICL-UHFFFAOYSA-N 4,6-dinitro-o-cresol Chemical compound CC1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1O ZXVONLUNISGICL-UHFFFAOYSA-N 0.000 description 1
- UAACPUXQSNTFKD-UHFFFAOYSA-N 4-[di(propan-2-yl)amino]butan-1-ol Chemical compound CC(C)N(C(C)C)CCCCO UAACPUXQSNTFKD-UHFFFAOYSA-N 0.000 description 1
- DKGYBSPSUUVQRL-UHFFFAOYSA-N 4-amino-n-hydroxybenzamide Chemical compound NC1=CC=C(C(=O)NO)C=C1 DKGYBSPSUUVQRL-UHFFFAOYSA-N 0.000 description 1
- DODOQPRLYSBBHR-UHFFFAOYSA-N 4-chloro-n-hydroxybenzamide Chemical compound ONC(=O)C1=CC=C(Cl)C=C1 DODOQPRLYSBBHR-UHFFFAOYSA-N 0.000 description 1
- QSNSCYSYFYORTR-UHFFFAOYSA-N 4-chloroaniline Chemical compound NC1=CC=C(Cl)C=C1 QSNSCYSYFYORTR-UHFFFAOYSA-N 0.000 description 1
- TXWGRZYCKOMFFZ-UHFFFAOYSA-N 4-fluoro-n-hydroxybenzamide Chemical compound ONC(=O)C1=CC=C(F)C=C1 TXWGRZYCKOMFFZ-UHFFFAOYSA-N 0.000 description 1
- AXBVSRMHOPMXBA-UHFFFAOYSA-N 4-nitrothiophenol Chemical compound [O-][N+](=O)C1=CC=C(S)C=C1 AXBVSRMHOPMXBA-UHFFFAOYSA-N 0.000 description 1
- MXXLHBCSVDDTIX-UHFFFAOYSA-N 4-oxo-1h-pyridine-2-carboxylic acid Chemical compound OC(=O)C1=CC(O)=CC=N1 MXXLHBCSVDDTIX-UHFFFAOYSA-N 0.000 description 1
- XICPRTQGMNZJLE-UHFFFAOYSA-N 5-(2-phenylethyl)-1,3-diazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)C1CCC1=CC=CC=C1 XICPRTQGMNZJLE-UHFFFAOYSA-N 0.000 description 1
- JOMBXHCJYIMCPC-UHFFFAOYSA-N 5-cyclopropyl-2h-tetrazole Chemical compound C1CC1C1=NNN=N1 JOMBXHCJYIMCPC-UHFFFAOYSA-N 0.000 description 1
- PHELEJSJZGCLEJ-UHFFFAOYSA-N 5-nitroquinoline-2-carboxylic acid Chemical compound [O-][N+](=O)C1=CC=CC2=NC(C(=O)O)=CC=C21 PHELEJSJZGCLEJ-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- XURXQNUIGWHWHU-UHFFFAOYSA-N 6-bromopyridine-2-carboxylic acid Chemical compound OC(=O)C1=CC=CC(Br)=N1 XURXQNUIGWHWHU-UHFFFAOYSA-N 0.000 description 1
- NAMCDLUESQLMOZ-UHFFFAOYSA-N 6-ethyl-1,3,5-triazine-2,4-diamine Chemical class CCC1=NC(N)=NC(N)=N1 NAMCDLUESQLMOZ-UHFFFAOYSA-N 0.000 description 1
- LTUUGSGSUZRPRV-UHFFFAOYSA-N 6-methylpyridine-2-carboxylic acid Chemical compound CC1=CC=CC(C(O)=O)=N1 LTUUGSGSUZRPRV-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- FHVDTGUDJYJELY-UHFFFAOYSA-N 6-{[2-carboxy-4,5-dihydroxy-6-(phosphanyloxy)oxan-3-yl]oxy}-4,5-dihydroxy-3-phosphanyloxane-2-carboxylic acid Chemical compound O1C(C(O)=O)C(P)C(O)C(O)C1OC1C(C(O)=O)OC(OP)C(O)C1O FHVDTGUDJYJELY-UHFFFAOYSA-N 0.000 description 1
- UAWVRVFHMOSAPU-UHFFFAOYSA-N 7-chlorokynurenic acid Chemical compound C1=CC(Cl)=CC2=NC(C(=O)O)=CC(O)=C21 UAWVRVFHMOSAPU-UHFFFAOYSA-N 0.000 description 1
- HSHGZXNAXBPPDL-HZGVNTEJSA-N 7beta-aminocephalosporanic acid Chemical compound S1CC(COC(=O)C)=C(C([O-])=O)N2C(=O)[C@@H]([NH3+])[C@@H]12 HSHGZXNAXBPPDL-HZGVNTEJSA-N 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JEGZRTMZYUDVBF-UHFFFAOYSA-N Benz[a]acridine Chemical compound C1=CC=C2C3=CC4=CC=CC=C4N=C3C=CC2=C1 JEGZRTMZYUDVBF-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- QRYRORQUOLYVBU-VBKZILBWSA-N Carnosic acid Natural products CC([C@@H]1CC2)(C)CCC[C@]1(C(O)=O)C1=C2C=C(C(C)C)C(O)=C1O QRYRORQUOLYVBU-VBKZILBWSA-N 0.000 description 1
- 108010087806 Carnosine Proteins 0.000 description 1
- GJSURZIOUXUGAL-UHFFFAOYSA-N Clonidine Chemical compound ClC1=CC=CC(Cl)=C1NC1=NCCN1 GJSURZIOUXUGAL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MIKUYHXYGGJMLM-GIMIYPNGSA-N Crotonoside Natural products C1=NC2=C(N)NC(=O)N=C2N1[C@H]1O[C@@H](CO)[C@H](O)[C@@H]1O MIKUYHXYGGJMLM-GIMIYPNGSA-N 0.000 description 1
- 239000001879 Curdlan Substances 0.000 description 1
- 229920002558 Curdlan Polymers 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- NYHBQMYGNKIUIF-UHFFFAOYSA-N D-guanosine Natural products C1=2NC(N)=NC(=O)C=2N=CN1C1OC(CO)C(O)C1O NYHBQMYGNKIUIF-UHFFFAOYSA-N 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- 206010056474 Erythrosis Diseases 0.000 description 1
- GHASVSINZRGABV-UHFFFAOYSA-N Fluorouracil Chemical compound FC1=CNC(=O)NC1=O GHASVSINZRGABV-UHFFFAOYSA-N 0.000 description 1
- SXRSQZLOMIGNAQ-UHFFFAOYSA-N Glutaraldehyde Chemical compound O=CCCCC=O SXRSQZLOMIGNAQ-UHFFFAOYSA-N 0.000 description 1
- 108010008488 Glycylglycine Proteins 0.000 description 1
- LKDRXBCSQODPBY-AMVSKUEXSA-N L-(-)-Sorbose Chemical compound OCC1(O)OC[C@H](O)[C@@H](O)[C@@H]1O LKDRXBCSQODPBY-AMVSKUEXSA-N 0.000 description 1
- AHLPHDHHMVZTML-BYPYZUCNSA-N L-Ornithine Chemical compound NCCC[C@H](N)C(O)=O AHLPHDHHMVZTML-BYPYZUCNSA-N 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- 229930182821 L-proline Natural products 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- TYMRLRRVMHJFTF-UHFFFAOYSA-N Mafenide Chemical compound NCC1=CC=C(S(N)(=O)=O)C=C1 TYMRLRRVMHJFTF-UHFFFAOYSA-N 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- 239000005956 Metaldehyde Substances 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- GMPKIPWJBDOURN-UHFFFAOYSA-N Methoxyamine Chemical group CON GMPKIPWJBDOURN-UHFFFAOYSA-N 0.000 description 1
- HWGBHCRJGXAGEU-UHFFFAOYSA-N Methylthiouracil Chemical compound CC1=CC(=O)NC(=S)N1 HWGBHCRJGXAGEU-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- 239000010022 Myron Substances 0.000 description 1
- 241001439614 Myron Species 0.000 description 1
- JDHILDINMRGULE-LURJTMIESA-N N(pros)-methyl-L-histidine Chemical compound CN1C=NC=C1C[C@H](N)C(O)=O JDHILDINMRGULE-LURJTMIESA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- CQOVPNPJLQNMDC-UHFFFAOYSA-N N-beta-alanyl-L-histidine Natural products NCCC(=O)NC(C(O)=O)CC1=CN=CN1 CQOVPNPJLQNMDC-UHFFFAOYSA-N 0.000 description 1
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- RQQDJYROSYLPPK-UHFFFAOYSA-N N1=CC=CC2=CC=CC=C21.N1=CC=CC2=CC=CC=C21 Chemical compound N1=CC=CC2=CC=CC=C21.N1=CC=CC2=CC=CC=C21 RQQDJYROSYLPPK-UHFFFAOYSA-N 0.000 description 1
- UAOZLNLYTGMSAV-UHFFFAOYSA-N NN.CN(C)C Chemical compound NN.CN(C)C UAOZLNLYTGMSAV-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- RHGKLRLOHDJJDR-UHFFFAOYSA-N Ndelta-carbamoyl-DL-ornithine Natural products OC(=O)C(N)CCCNC(N)=O RHGKLRLOHDJJDR-UHFFFAOYSA-N 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- MYKUKUCHPMASKF-UHFFFAOYSA-N Nornicotine Natural products C1CCNC1C1=CC=CN=C1 MYKUKUCHPMASKF-UHFFFAOYSA-N 0.000 description 1
- AHLPHDHHMVZTML-UHFFFAOYSA-N Orn-delta-NH2 Natural products NCCCC(N)C(O)=O AHLPHDHHMVZTML-UHFFFAOYSA-N 0.000 description 1
- UTJLXEIPEHZYQJ-UHFFFAOYSA-N Ornithine Natural products OC(=O)C(C)CCCN UTJLXEIPEHZYQJ-UHFFFAOYSA-N 0.000 description 1
- 229920002230 Pectic acid Polymers 0.000 description 1
- 229920000805 Polyaspartic acid Polymers 0.000 description 1
- 108010020346 Polyglutamic Acid Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 108010039918 Polylysine Proteins 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 101710194948 Protein phosphatase PhpP Proteins 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 239000004141 Sodium laurylsulphate Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- LXNHXLLTXMVWPM-UHFFFAOYSA-N Vitamin B6 Natural products CC1=NC=C(CO)C(CO)=C1O LXNHXLLTXMVWPM-UHFFFAOYSA-N 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- NIONDZDPPYHYKY-UHFFFAOYSA-N Z-hexenoic acid Natural products CCCC=CC(O)=O NIONDZDPPYHYKY-UHFFFAOYSA-N 0.000 description 1
- UEDBHEFYEKZZBA-UHFFFAOYSA-N ac1np5zy Chemical compound C1=CC=[C+]=C[CH]1 UEDBHEFYEKZZBA-UHFFFAOYSA-N 0.000 description 1
- RRUDCFGSUDOHDG-UHFFFAOYSA-N acetohydroxamic acid Chemical compound CC(O)=NO RRUDCFGSUDOHDG-UHFFFAOYSA-N 0.000 description 1
- 229960001171 acetohydroxamic acid Drugs 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 description 1
- 238000012382 advanced drug delivery Methods 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 235000010419 agar Nutrition 0.000 description 1
- 229940072056 alginate Drugs 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- QTQUJRIHTSIVOF-UHFFFAOYSA-N amino(phenyl)methanol Chemical compound NC(O)C1=CC=CC=C1 QTQUJRIHTSIVOF-UHFFFAOYSA-N 0.000 description 1
- 150000008361 aminoacetonitriles Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229930014345 anabasine Natural products 0.000 description 1
- JNFRNXKCODJPMC-UHFFFAOYSA-N aniline;boric acid Chemical compound OB(O)O.NC1=CC=CC=C1 JNFRNXKCODJPMC-UHFFFAOYSA-N 0.000 description 1
- 229920001448 anionic polyelectrolyte Polymers 0.000 description 1
- 239000003146 anticoagulant agent Substances 0.000 description 1
- 229940127219 anticoagulant drug Drugs 0.000 description 1
- NWCHELUCVWSRRS-UHFFFAOYSA-N atrolactic acid Chemical compound OC(=O)C(O)(C)C1=CC=CC=C1 NWCHELUCVWSRRS-UHFFFAOYSA-N 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- HNYOPLTXPVRDBG-UHFFFAOYSA-N barbituric acid Chemical compound O=C1CC(=O)NC(=O)N1 HNYOPLTXPVRDBG-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- VDEUYMSGMPQMIK-UHFFFAOYSA-N benzhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1 VDEUYMSGMPQMIK-UHFFFAOYSA-N 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- NHOWLEZFTHYCTP-UHFFFAOYSA-N benzylhydrazine Chemical compound NNCC1=CC=CC=C1 NHOWLEZFTHYCTP-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- AGSPXMVUFBBBMO-UHFFFAOYSA-N beta-aminopropionitrile Chemical compound NCCC#N AGSPXMVUFBBBMO-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- UOFFEDRAIFYOBS-UHFFFAOYSA-N butan-1-imine Chemical compound CCCC=N UOFFEDRAIFYOBS-UHFFFAOYSA-N 0.000 description 1
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical class CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 1
- FUFJGUQYACFECW-UHFFFAOYSA-L calcium hydrogenphosphate Chemical compound [Ca+2].OP([O-])([O-])=O FUFJGUQYACFECW-UHFFFAOYSA-L 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229940044199 carnosine Drugs 0.000 description 1
- CQOVPNPJLQNMDC-ZETCQYMHSA-N carnosine Chemical compound [NH3+]CCC(=O)N[C@H](C([O-])=O)CC1=CNC=N1 CQOVPNPJLQNMDC-ZETCQYMHSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- NQBWNECTZUOWID-QSYVVUFSSA-N cinnamyl cinnamate Chemical compound C=1C=CC=CC=1\C=C/C(=O)OC\C=C\C1=CC=CC=C1 NQBWNECTZUOWID-QSYVVUFSSA-N 0.000 description 1
- 229960002173 citrulline Drugs 0.000 description 1
- 235000013477 citrulline Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229960002896 clonidine Drugs 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- YQHLDYVWEZKEOX-UHFFFAOYSA-N cumene hydroperoxide Chemical compound OOC(C)(C)C1=CC=CC=C1 YQHLDYVWEZKEOX-UHFFFAOYSA-N 0.000 description 1
- 235000019316 curdlan Nutrition 0.000 description 1
- 229940078035 curdlan Drugs 0.000 description 1
- 229940104302 cytosine Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000012973 diazabicyclooctane Substances 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- 229960005081 diclofenamide Drugs 0.000 description 1
- UCQFCFPECQILOL-UHFFFAOYSA-N diethyl hydrogen phosphate Chemical compound CCOP(O)(=O)OCC UCQFCFPECQILOL-UHFFFAOYSA-N 0.000 description 1
- PQZTVWVYCLIIJY-UHFFFAOYSA-N diethyl(propyl)amine Chemical compound CCCN(CC)CC PQZTVWVYCLIIJY-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical class [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- MPAYEWNVIPXRDP-UHFFFAOYSA-N ethanimine Chemical compound CC=N MPAYEWNVIPXRDP-UHFFFAOYSA-N 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N ethyl formate Chemical compound CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- WHRIKZCFRVTHJH-UHFFFAOYSA-N ethylhydrazine Chemical compound CCNN WHRIKZCFRVTHJH-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 description 1
- ZZKAIKCETMSCBY-UHFFFAOYSA-N formic acid;styrene Chemical compound OC=O.C=CC1=CC=CC=C1 ZZKAIKCETMSCBY-UHFFFAOYSA-N 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerol Substances OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- 229940043257 glycylglycine Drugs 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 229940029575 guanosine Drugs 0.000 description 1
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 1
- 229940005740 hexametaphosphate Drugs 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- UYXAWHWODHRRMR-UHFFFAOYSA-N hexobarbital Chemical compound O=C1N(C)C(=O)NC(=O)C1(C)C1=CCCCC1 UYXAWHWODHRRMR-UHFFFAOYSA-N 0.000 description 1
- 229960002456 hexobarbital Drugs 0.000 description 1
- 229960001340 histamine Drugs 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- FDGQSTZJBFJUBT-UHFFFAOYSA-N hypoxanthine Chemical compound O=C1NC=NC2=C1NC=N2 FDGQSTZJBFJUBT-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229960000448 lactic acid Drugs 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- NCBZRJODKRCREW-UHFFFAOYSA-N m-anisidine Chemical compound COC1=CC=CC(N)=C1 NCBZRJODKRCREW-UHFFFAOYSA-N 0.000 description 1
- 229960003640 mafenide Drugs 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- GKKDCARASOJPNG-UHFFFAOYSA-N metaldehyde Chemical compound CC1OC(C)OC(C)OC(C)O1 GKKDCARASOJPNG-UHFFFAOYSA-N 0.000 description 1
- MKIJJIMOAABWGF-UHFFFAOYSA-N methyl 2-sulfanylacetate Chemical compound COC(=O)CS MKIJJIMOAABWGF-UHFFFAOYSA-N 0.000 description 1
- 229960002545 methylthiouracil Drugs 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- CPQCSJYYDADLCZ-UHFFFAOYSA-N n-methylhydroxylamine Chemical compound CNO CPQCSJYYDADLCZ-UHFFFAOYSA-N 0.000 description 1
- KVBGVZZKJNLNJU-UHFFFAOYSA-N naphthalene-2-sulfonic acid Chemical class C1=CC=CC2=CC(S(=O)(=O)O)=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- RGHXWDVNBYKJQH-UHFFFAOYSA-N nitroacetic acid Chemical compound OC(=O)C[N+]([O-])=O RGHXWDVNBYKJQH-UHFFFAOYSA-N 0.000 description 1
- RBXVOQPAMPBADW-UHFFFAOYSA-N nitrous acid;phenol Chemical class ON=O.OC1=CC=CC=C1 RBXVOQPAMPBADW-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- HEGSGKPQLMEBJL-RKQHYHRCSA-N octyl beta-D-glucopyranoside Chemical compound CCCCCCCCO[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O HEGSGKPQLMEBJL-RKQHYHRCSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- KHPXUQMNIQBQEV-UHFFFAOYSA-N oxaloacetic acid Chemical compound OC(=O)CC(=O)C(O)=O KHPXUQMNIQBQEV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BHAAPTBBJKJZER-UHFFFAOYSA-N p-anisidine Chemical compound COC1=CC=C(N)C=C1 BHAAPTBBJKJZER-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- LCLHHZYHLXDRQG-ZNKJPWOQSA-N pectic acid Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)O[C@H](C(O)=O)[C@@H]1OC1[C@H](O)[C@@H](O)[C@@H](OC2[C@@H]([C@@H](O)[C@@H](O)[C@H](O2)C(O)=O)O)[C@@H](C(O)=O)O1 LCLHHZYHLXDRQG-ZNKJPWOQSA-N 0.000 description 1
- TZMFJUDUGYTVRY-UHFFFAOYSA-N pentane-2,3-dione Chemical compound CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 description 1
- HWGNBUXHKFFFIH-UHFFFAOYSA-I pentasodium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O HWGNBUXHKFFFIH-UHFFFAOYSA-I 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229960004554 phenglutarimide Drugs 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- VUNXBQRNMNVUMV-UHFFFAOYSA-N phenyl(piperazin-1-yl)methanone Chemical compound C=1C=CC=CC=1C(=O)N1CCNCC1 VUNXBQRNMNVUMV-UHFFFAOYSA-N 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 229960002036 phenytoin Drugs 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229940075930 picrate Drugs 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-M picrate anion Chemical compound [O-]C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-M 0.000 description 1
- 229960000502 poloxamer Drugs 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 239000010318 polygalacturonic acid Substances 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 150000004804 polysaccharides Chemical class 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- ZVJHJDDKYZXRJI-UHFFFAOYSA-N pyrroline Natural products C1CC=NC1 ZVJHJDDKYZXRJI-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012712 reversible addition−fragmentation chain-transfer polymerization Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229940076279 serotonin Drugs 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- 235000019830 sodium polyphosphate Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940086735 succinate Drugs 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- SEEPANYCNGTZFQ-UHFFFAOYSA-N sulfadiazine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=NC=CC=N1 SEEPANYCNGTZFQ-UHFFFAOYSA-N 0.000 description 1
- 229960004306 sulfadiazine Drugs 0.000 description 1
- ZZORFUFYDOWNEF-UHFFFAOYSA-N sulfadimethoxine Chemical compound COC1=NC(OC)=CC(NS(=O)(=O)C=2C=CC(N)=CC=2)=N1 ZZORFUFYDOWNEF-UHFFFAOYSA-N 0.000 description 1
- 229960000973 sulfadimethoxine Drugs 0.000 description 1
- ASWVTGNCAZCNNR-UHFFFAOYSA-N sulfamethazine Chemical compound CC1=CC(C)=NC(NS(=O)(=O)C=2C=CC(N)=CC=2)=N1 ASWVTGNCAZCNNR-UHFFFAOYSA-N 0.000 description 1
- 229960005158 sulfamethizole Drugs 0.000 description 1
- VACCAVUAMIDAGB-UHFFFAOYSA-N sulfamethizole Chemical compound S1C(C)=NN=C1NS(=O)(=O)C1=CC=C(N)C=C1 VACCAVUAMIDAGB-UHFFFAOYSA-N 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- GECHUMIMRBOMGK-UHFFFAOYSA-N sulfapyridine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=CC=CC=N1 GECHUMIMRBOMGK-UHFFFAOYSA-N 0.000 description 1
- 229960002211 sulfapyridine Drugs 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920000208 temperature-responsive polymer Polymers 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- OVCXRBARSPBVMC-UHFFFAOYSA-N triazolopyridine Chemical compound C=1N2C(C(C)C)=NN=C2C=CC=1C=1OC=NC=1C1=CC=C(F)C=C1 OVCXRBARSPBVMC-UHFFFAOYSA-N 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- 235000019801 trisodium phosphate Nutrition 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 229960004441 tyrosine Drugs 0.000 description 1
- 235000019158 vitamin B6 Nutrition 0.000 description 1
- 239000011726 vitamin B6 Substances 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
发现了一种含水抛光组合物,所述含水抛光组合物包含:(A)至少一种磨料颗粒,当其分散于不含组分(B)且pH值为3-9的含水介质中时带正电荷,如电泳迁移率所证实的那样;(B)至少一种选自线性和支化氧化烯均聚物和共聚物的水溶性聚合物;和(C)至少一种阴离子磷酸盐分散剂;以及一种使用所述含水抛光组合物以抛光用于电子、机械和光学器件的衬底材料的方法。
Description
本发明涉及一种新型含水抛光组合物,其尤其适于抛光包含氧化硅电介质和多晶硅膜且任选包含氮化硅膜的半导体衬底。
此外,本发明涉及一种抛光用于制造电子、机械和光学器件的衬底的新型方法,所述衬底材料包含氧化硅和多晶硅膜,且任选包含氮化硅膜。引用文献
本申请所引文献通过引用全文引入。
发明背景
化学机械平坦化或抛光(CMP)是获得集成电路(IC)器件局部和全局平坦度的主要方法。该技术通常采用含有磨料和其他添加剂的CMP组合物或淤浆作为在施加负载下处于旋转衬底表面与抛光垫之间的活性化学品。因此,CMP方法兼具物理过程如摩擦以及化学过程如氧化或螯合。不希望衬底材料由纯物理作用或纯化学作用而移除或抛光,而是希望二者的协同增效组合以获得快速均匀的移除。
以此方式移除衬底材料直至获得所需的平坦度或者直至阻挡子层或停止层暴露。最终,获得平坦的无缺陷表面,其能通过后续的光刻、图案化、蚀刻和薄膜加工而进行合适的多层IC器件制造。
浅槽隔离(STI)为特定的CMP应用,其通常需要在图案化晶片衬底上相对于氮化硅选择性移除二氧化硅。在这种情况下,用电介质材料如二氧化硅过量填充经蚀刻的沟槽,使用氮化硅阻挡膜作为停止层抛光该电介质材料。在从阻挡膜清除二氧化硅且同时使暴露的氮化硅和沟槽氧化硅的移除最小化的情况下结束CMP方法。
这要求CMP淤浆能实现二氧化硅材料移除速率MRR对氮化硅移除速率MRR的高相对比,该比值在本领域中也称为氧化物对氮化物的选择性。
近年来,也将多晶硅膜用作为阻挡膜或电极材料(参见美国专利US6,626,968B2)。因此,非常希望提供允许对包含氧化硅电介质材料和多晶硅膜的衬底进行全局平坦化的CMP淤浆和方法。这要求CMP淤浆具有高氧化物对多晶硅的选择性。
甚至更希望提供允许对额外包含氮化硅膜的衬底进行全局平坦化的CMP淤浆和方法。
在这种情况下,氧化物对氮化物的选择性不应过高,以避免在包含氧化硅、氮化硅和多晶硅区域的全局平坦化、异质、图案化表面中形成碟形缺陷和其他破坏及缺陷。然而,氮化硅对多晶硅的选择性也应高。
在STI应用中,氧化铈基CMP淤浆由于其能实现较高的氧化物对氮化物选择性而颇受关注,所述高氧化物对氮化物选择性归因于氧化铈对二氧化硅的高化学亲和力,这在本领域也称为氧化铈的化学齿化作用(toothaction)。
尽管如此,必须借助“调节”该选择性的添加剂以改善氧化铈基CMP淤浆的氧化物对多晶硅的选择性。
已进行了许多尝试以调节氧化铈基CMP淤浆的选择性。
因此,Jae-Don Lee等在Journal of the Electrochemical Society,149(8),G477-G481,2002中公开了具有不同亲水-亲脂平衡(HLB)值的非离子表面活性剂如聚氧化乙烯、氧化乙烯-氧化丙烯共聚物和氧化乙烯-氧化丙烯-氧化乙烯三嵌段共聚物对CMP期间的氧化物对多晶硅选择性的影响。然而,使用热解法二氧化硅作为磨料。
P.W.Carter等在Electrochemical and Solid-State Letters,8(8),G218-G221(2005),Interfacial Reactivity between Ceria and Silicon Dioxideand Silicon Nitride Surfaces,Organic Additive Effects中公开了谷氨酸、吡啶甲酸、4-羟基苯甲酸、咪唑、乙酸、甲酸、3-羟基吡啶甲酸、邻氨基苯甲酸、吡咯甲酸、环己烷甲酸、哌嗪、吡啶、2-苯基乙酸、苯甲酸、3-氨基苯酚、琥珀酸、甜菜碱、甘氨酸、脯氨酸、苯磺酸、吗啉、水杨酸、对苯二甲酸、苹果酸、异丙醇、柠檬酸和草酸对氧化物对氮化物的选择性的影响。
Y.N.Prasad等在Electrochemical and Solid-State Letters,9(12),G337-G339(2006),Role ofAmino-Acid Absorption on Silica and SiliconNitride Surfaces during STI CMP中公开了脯氨酸和精氨酸的影响。
Hyun-Goo Kang等在Journal of Material Research,第22卷第3期,2007年,第777-787页公开了在浅槽隔离化学机械平坦化中,氧化铈淤浆中的磨料粒度和聚丙烯酸分子量对SiO2/Si3N4膜移除选择性的影响。
S.Kim等在Journal of Colloid and Interface Science,319(2008),第48-52页中公开了用于化学机械抛光(CMP)的阴离子聚电解质的吸收行为。
S.V.Babu等在Electrochemical and Solid-State Letters,7(12),G327-G330(2004),Slurry Additive Effects on the Suppression of SiliconNitride Removal during CMP中研究了精氨酸、赖氨酸、脯氨酸、N-甲基甘氨酸、丙氨酸、甘氨酸、吡啶甲酸、N,N-二甲基甘氨酸、3-氨基丁酸和异烟酸的影响。
Jae-Dong Lee等在Journal of the Electrochemical Society,149(8),G477-G481,2002,Effects of Nonionic Surfactants on Oxide-To-PolysiliconSelectivity during Chemical Mechanical Polishing中公开了表面活性剂如聚氧化乙烯(PEO)和氧化乙烯-氧化丙烯-氧化乙烯三嵌段共聚物对选择性的影响。然而,并未提及氧化物对氮化物的选择性。
美国专利US5,738,800、US6,042,741、US6,132,637和US6,218,305B公开了氧化铈基CMP淤浆,其包含络合剂,如苹果酸、酒石酸、葡糖酸、柠檬酸、邻二羟基苯甲酸和多羟基苯甲酸、邻苯二甲酸、焦儿茶酚、焦棓酚、棓酸、单宁酸及其盐。此外,所述氧化铈基CMP淤浆包含阴离子、阳离子、两性或非离子表面活性剂。其声称该氧化铈基CMP淤浆具有高氧化物对氮化物选择性。
美国专利US5,759,917、US6,689,692B1和US6,984,588B2公开了氧化铈基CMP淤浆,其包含羧酸,如乙酸、己二酸、丁酸、癸酸、己酸、辛酸、柠檬酸、戊二酸、乙醇酸、甲酸、富马酸、乳酸、月桂酸、苹果酸、马来酸、丙二酸、肉豆蔻酸、草酸、棕榈酸、邻苯二甲酸、丙酸、丙酮酸、硬脂酸、琥珀酸、酒石酸、戊酸、2-(2-甲氧基乙氧基)乙酸、2-[2-(2-甲氧基乙氧基)乙氧基]乙酸、聚乙二醇二(羧甲基)醚及其衍生物和盐。此外,所述氧化铈基CMP淤浆包含水溶性有机和无机盐,如硝酸盐、磷酸盐和硫酸盐。其声称该氧化铈基CMP淤浆优先于氮化硅层地抛光氧化硅过填充物。
美国专利US6,299,659B1公开了一种氧化铈基CMP淤浆,其中用硅烷、钛酸酯、锆酸酯、铝和磷酸盐偶联剂处理磨料颗粒以改善氧化物对氮化物的选择性。
美国专利申请US2002/0034875A1和美国专利US6,626,968B2公开了一种氧化铈基CMP淤浆,其包含有表面活性剂,pH值调节剂如氢氧化钾、硫酸、硝酸、盐酸或磷酸以及含有亲水官能团和疏水官能团的聚合物如聚乙烯基甲基醚(PVME)、聚乙二醇(PEG)、聚氧化乙烯23月桂基醚(POLE)、聚丙酸(PPA)、聚丙烯酸(PM)和聚乙二醇二醚(PEGBE)。所述氧化铈基CMP淤浆提高了氧化物对多晶硅的选择性。
美国专利US6,436,835B1公开了一种用于浅槽隔离工艺的氧化铈基CMP淤浆,其包含具有羧酸或羧酸盐或磺酸或胺磺酰基的水溶性有机化合物,如聚丙烯酸、聚甲基丙烯酸、萘磺酸-福尔马林缩合物、苹果酸、乳酸、酒石酸、葡糖酸、柠檬酸、琥珀酸、己二酸、富马酸、天冬氨酸、谷氨酸、甘氨酸4-氨基丁酸、6-氨基己酸、12-氨基月桂酸、精氨酸、甘氨酰甘氨酸、月桂基苯磺酸及其铵盐。其声称所述氧化铈基CMP淤浆具有高氧化物对氮化物的选择性。
美国专利US6,491,843B1、US6,544,892B2和US6,627,107B2公开了一种用于改善氧化物对氮化物选择性的氧化铈基CMP淤浆,其包含α-氨基酸如赖氨酸、丙氨酸和脯氨酸。
美国专利US6,616,514B1公开了一种用于改善氧化物对氮化物选择性的氧化铈基CMP淤浆,其包含具有至少3个在含水介质中不可离解的羟基的有机多元醇,或由至少一种具有至少3个在含水介质中不可离解的羟基的单体所形成的聚合物,如甘露糖醇、山梨糖醇、甘露糖、木糖醇、山梨糖、蔗糖和糊精。
美国专利US7,071,105B2和美国申请US2006/0144824A1公开了氧化铈基CMP淤浆,其包含抛光添加剂,所述抛光添加剂包含pKa为4-9的官能团。所述抛光添加剂选自如下组:芳基胺、氨基醇、脂族胺、杂环族胺、异羟肟酸、氨基羧酸、环状单羧酸、不饱和单羧酸、取代酚、磺酰胺、硫醇及其盐,尤其是氯化物、溴化物、硫酸盐、磺酸盐、三氟甲磺酸盐、乙酸盐、三氟乙酸盐、苦味酸盐、全氟丁酸盐以及钠、钾和铵盐。
明确提及的芳基胺为苯胺、4-氯苯胺、3-甲氧基苯胺、N-甲基苯胺、4-甲氧基苯胺、对甲苯胺、邻氨基苯甲酸、3-氨基-4-羟基苯磺酸、氨基苄醇、氨基苄胺、1-(-氨基苯基)吡咯、1-(3-氨基苯基)乙醇、2-氨基苯基醚、2,5-双(4-氨基苯基)-1,3,4-二唑、2-(2-氨基苯基)-1H-1,3,4-三唑、2-氨基苯、3-氨基苯、4-氨基苯、二甲基氨基苯酚、2-氨基硫代苯酚、3-氨基硫代苯酚、4-氨基苯基甲基硫醚、2-氨基苯磺酰胺、邻氨基苯磺酸、3-氨基苯硼酸、5-氨基间苯二甲酸、乙酰磺胺、磺胺酸、邻-或对-氨苯基胂酸和(3R)-3-(4-三氟甲基苯基氨基)戊酸。
明确提及的氨基醇为三乙醇胺、苄基二乙醇胺、三(羟甲基)氨基甲烷、羟胺和四环素。
明确提及的脂族胺为甲氧基胺、羟胺、N-甲基羟胺、N,O-二甲基羟胺、β-二氟乙基胺、乙二胺、三亚乙基二胺、((丁基氨基)(2-羟基苯基)甲基)磷酸二乙酯、亚氨基乙烷、亚氨基丁烷、三烯丙基胺、氰胺如氨基乙腈、二甲基氨基乙腈、2-氨基-2-氰基丙烷、异丙基氨基丙腈、二乙基氨基丙腈、氨基丙腈、二氰基二乙基胺、肼、甲基肼、四甲基肼、N,N-二甲基肼、苯肼、N,N-二乙基肼、三甲基肼、乙基肼及其盐。
明确提及的杂环族胺为咪唑、1-甲基咪唑、2-甲基咪唑、2-乙基咪唑、2-羟甲基咪唑、1-甲基-2-羟甲基咪唑、苯并咪唑、喹啉、异喹啉、羟基喹啉、三聚氰胺、吡啶、联吡啶、2-甲基吡啶、4-甲基吡啶、2-氨基吡啶、3-氨基吡啶、2,3-吡啶二甲酸、2,5-吡啶二甲酸、2,6-吡啶二甲酸、5-丁基-2-吡啶甲酸、2-吡啶甲酸、3-羟基-2-吡啶甲酸、4-羟基-2-吡啶甲酸、3-苯甲酰基-2-吡啶甲酸、6-甲基-2-吡啶甲酸、3-甲基-2-吡啶甲酸、6-溴-2-吡啶甲酸、6-氯-2-吡啶甲酸、3,6-二氯-2-吡啶甲酸、4-肼基-3,5,6-三氯-2-吡啶甲酸、2-喹啉甲酸、4-甲氧基-2-喹啉甲酸、8-羟基-2-喹啉甲酸、4,8-羟基-2-喹啉甲酸、7-氯-4-羟基-2-喹啉甲酸、5,7-二氯-4-羟基-2-喹啉甲酸、5-硝基-2-喹啉甲酸、1-异喹啉甲酸、3-异喹啉甲酸、吖啶、苯并喹啉、苯并吖啶、可乐定、毒藜碱、降烟碱、三唑并吡啶、吡哆素、5-羟色胺、组胺、苯二氮杂氮丙啶、吗啉、1,8-二氮杂双环(5,4,0)十一碳烯-7、DABCO、六亚甲基四胺、哌嗪、N-苯甲酰基哌嗪、1-甲苯磺酰基哌嗪、N-羧乙基哌嗪、1,2,3-三唑、1,2,4-三唑、2-氨基噻唑、吡咯、吡咯-2-甲酸、3-吡咯啉-2-甲酸、乙基吡咯啉、环己基吡咯啉、甲苯基吡咯啉、四唑、5-环丙基四唑、5-羟基四唑、5-苯氧基四唑、5-苯基四唑、氟尿嘧啶、甲基硫尿嘧啶、5,5-二苯基乙内酰脲、5,5-二甲基-2,4-唑烷二酮、邻苯二甲酰亚胺、琥珀酰亚胺、3,3-甲基苯基戊二酰亚胺、3,3-二甲基琥珀酰亚胺、咪唑并[2,3-b]噻唑(thioxazole)、羟基咪唑并[2,3-a]异吲哚、5,5-甲基苯基巴比妥酸、1,5,5-三甲基巴比妥酸、海索比妥、5,5-二甲基巴比妥酸、1,5-二甲基-5-苯巴比妥酸及其盐。
具体提及的异羟肟酸为甲异羟肟酸、乙异羟肟酸、苯异羟肟酸、水杨苷异羟肟酸、2-氨基苯异羟肟酸、2-氯苯异羟肟酸、2-氟苯异羟肟酸、2-硝基苯异羟肟酸、3-硝基苯异羟肟酸、4-氨基苯异羟肟酸、4-氯苯异羟肟酸、4-氟苯异羟肟酸、4-硝基苯异羟肟酸及其盐。
明确提及的氨基羧酸为谷氨酸、β-羟基谷氨酸、天冬氨酸、天冬酰胺、重氮丝胺酸、半胱氨酸、组氨酸、3-甲基组氨酸、胞嘧啶、7-氨基头孢烷酸和肌肽。
明确提及的环状单羧酸为萘-2-甲酸、环己烷甲酸、环己基乙酸、2-苯基乳酸、4-羟基苯甲酸、3-羟基苯甲酸、2-吡啶甲酸、顺-和反-环己烷甲酸、苯甲酸及其盐。
明确提及的不饱和单羧酸为肉桂酸、丙烯酸、3-氯丙基-2-烯甲酸、巴豆酸、4-丁-2-烯甲酸、顺或反-2-戊酸、2-甲基-2-戊酸、2-己烯酸和3-乙基-2-己烯酸及其盐。
明确提及的酚为硝基苯酚、2,6-二卤-4-硝基苯酚、2,6-二C1-12烷基-4-硝基苯酚、2,4-二硝基苯酚、3,4-二硝基苯酚、2-C1-12烷基-4,6-二硝基苯酚、2-卤-4,6-二硝基苯酚、二硝基邻甲酚、苦味酸及其盐。
明确提及的磺酰胺为N-氯甲苯基磺酰胺、二氯苯磺胺米隆(dichlorophenamide mafenide)、尼美舒利(nimesulide)、磺胺甲基硫代二嗪、磺胺培林(sulfaperin)、乙酰磺胺、磺胺嘧啶、磺胺二甲氧哒嗪、磺胺二甲嘧啶、磺胺吡啶、磺胺喹啉及其盐。
明确提及的硫醇为二硫化二氢、半胱胺、半胱氨酰基半胱氨酸、甲基半胱氨酸、苯硫酚、对氯苯硫酚、邻氨基苯硫酚、邻巯基苯乙酸对硝基苯硫醇、2-巯基乙磺酸盐、N-二甲基半胱胺、二丙基半胱胺、二乙基半胱胺、巯基乙基吗啉、甲基硫基乙醇酸盐、巯基乙胺、N-三甲基半胱氨酸、谷胱甘肽、巯基乙基哌啶、二乙基氨基丙烷硫醇及其盐。
据信所述抛光添加剂能提高氧化物对氮化物的选择性。
美国专利申请US2006/0124594A1公开了一种氧化铈基CMP淤浆,其具有至少1.5cP的粘度且包含增粘剂,所述增粘剂包括非离子聚合物如聚乙二醇(PEG)。据称该氧化铈基CMP淤浆具有高氧化物对氮化物选择性和低晶片内非均匀性WIWNU。
美国专利申请US2006/0207188A1公开了一种氧化铈基CMP淤浆,其包含诸如聚丙烯酸或聚甲基丙烯酸烷基酯的聚合物与诸如丙烯酰胺、甲基丙烯酰胺、乙基-甲基丙烯酰胺、乙烯基吡啶或乙烯基吡咯烷酮的单体的反应产物。据信所述反应产物也能提高氧化物对氮化物的选择性。
美国专利申请US2006/0216935A1公开了一种氧化铈基CMP淤浆,其包含蛋白质、赖氨酸和/或精氨酸,以及吡咯烷酮类化合物如聚乙烯基吡咯烷酮(PVP)、N-辛基-2-吡咯烷酮、N-乙基-2-吡咯烷酮、N-羟乙基-2-吡咯烷酮、N-环己基-2-吡咯烷酮、N-丁基-2-吡咯烷酮、N-己基-2-吡咯烷酮、N-癸基-2-吡咯烷酮、N-十八烷基-2-吡咯烷酮和N-十六烷基-2-吡咯烷酮。所述氧化铈基CMP淤浆可进一步包含分散剂,如聚丙烯酸、二醇和聚二醇。具体实施例使用脯氨酸、聚乙烯基吡咯烷酮或N-辛基-2-吡咯烷酮、PPO/PEO嵌段共聚物和戊二醛。据信所述氧化铈基CMP淤浆不腐蚀性地移除沟槽二氧化硅,由此允许超出端点的延伸性抛光而基本不提高最小台阶高度。
美国专利申请US2007/0077865A1公开了一种氧化铈基CMP淤浆,其包含优选获自由BASF销售的PluronicTM族的聚氧化乙烯/聚氧化丙烯共聚物。所述氧化铈基CMP淤浆可进一步包含氨基醇如2-二甲基氨基-2-甲基-1-丙醇(DMAMP)、2-氨基-2-乙基-1-丙醇(AMP)、2-(2-氨基乙基氨基)乙醇、2-(异丙基氨基)乙醇、2-(甲基氨基)乙醇、2-(二乙基氨基)乙醇、2-(2-二甲基氨基)乙氧基)乙醇、1,1'-[[3-(二甲基氨基)丙基]亚氨基]-双-2-丙醇、2-(2-丁基氨基)乙醇、2-(叔丁基氨基)乙醇、2-(二异丙基氨基)乙醇和N-(3-氨基丙基)吗啉。所述氧化铈基CMP淤浆可进一步包含季铵化合物,如四甲基氢氧化铵;成膜剂,如烷基胺、链烷醇胺、羟胺、磷酸酯、月桂基硫酸钠、脂肪酸、聚丙烯酸酯、聚甲基丙烯酸酯、聚乙烯基膦酸酯、聚苹果酸酯、聚苯乙烯磺酸酯、聚乙烯基硫酸酯、苯并三唑、三唑和苯并咪唑;以及络合剂,如乙酰丙酮、乙酸盐、乙醇酸盐、乳酸盐、葡糖酸盐、棓酸、草酸盐、邻苯二甲酸盐、柠檬酸盐、琥珀酸盐、酒石酸盐、苹果酸盐、乙二胺四乙酸、乙二醇、焦儿茶酚、焦棓酚、单宁酸、盐和膦酸。据信所述氧化铈基CMP淤浆提供了良好的氧化硅对多晶硅选择性和/或氮化硅对多晶硅选择性。
美国专利申请US2007/0175104A1公开了一种氧化铈基CMP淤浆,其包含选自具有被选自如下组的任何成员取代的N-单取代或N,N-二取代骨架的水溶性聚合物的多晶硅抛光抑制剂:丙烯酰胺、甲基丙烯酰胺及其α-取代衍生物;聚乙二醇;聚乙烯基吡咯烷酮;烷氧基化的直链脂族醇以及基于乙炔的二醇的氧化乙烯加合物。所述氧化铈基CMP淤浆可包含其他水溶性聚合物,如多醣如藻酸、果胶酸、羧甲基纤维素、琼脂、凝胶多糖和茁霉多糖(pullulan);聚羧酸,如聚天冬氨酸、聚谷氨酸、聚赖氨酸、聚苹果酸、聚甲基丙烯酸、聚酰亚胺酸、聚马来酸、聚衣康酸、聚富马酸、聚(对苯乙烯甲酸)、聚丙烯酸、聚丙烯酰胺、氨基聚丙烯酰胺、聚乙醛酸及其盐;以及乙烯基聚合物,如聚乙烯醇和聚丙烯醛。据称所述氧化铈基CMP淤浆具有高氧化硅对多晶硅选择性。
美国专利申请US2007/0191244A1公开了一种氧化铈基CMP淤浆,其包含具有30-500重均分子量且含有羟基和羧基或两者的化合物,如柠檬酸盐、苹果酸盐、葡糖酸盐、酒石酸盐、2-羟基异丁酸盐、己二酸盐、辛酸盐、琥珀酸盐、含EDTA的化合物、戊二酸盐、亚甲基琥珀酸盐、甘露糖、甘油糖-半乳糖-庚糖、赤藓糖-甘露糖-辛糖、阿拉伯糖-半乳糖-壬糖和谷氨酰胺。所述氧化铈基CMP淤浆可进一步包含线性聚合物酸或具有烷氧基聚亚烷基二醇侧链的接枝型聚合物酸。据称所述氧化铈基CMP淤浆实现了改善的经抛光晶片的全局平坦度。
美国专利申请US2007/0218811A1公开了一种氧化铈基CMP淤浆,其具有4-7.5的pH值且包含分散剂、聚羧酸和100-1000ppm的强酸,所述强酸的第一可离解酸基的pKa值为3.2或更小。作为实例提及了丙烯酸和甲基丙烯酸的聚合物作为阴离子分散剂,聚氧乙烯衍生物作为非离子分散剂,和聚乙烯基吡咯烷酮作为阳离子分散剂。具体提及的强酸为硫酸、HCl、硝酸、磷酸、草酸、马来酸、苦味酸、亚硫酸、硫代亚硫酸、酰氨基硫酸、氯酸、高氯酸、亚氯酸、氢碘酸、高碘酸、碘酸、氢溴酸、高溴酸、铬酸、亚硝酸、二膦酸、三聚磷酸、次膦酸、吡啶甲酸、膦酸、异烟酸、烟酸、三氯乙酸、二氯乙酸、氯乙酸、氰基乙酸、草酰乙酸、硝基乙酸、溴乙酸、氟乙酸、苯氧基乙酸、邻溴苯甲酸、邻硝基苯甲酸、邻氯苯甲酸、对氨基苯甲酸、邻氨基苯甲酸、邻苯二甲酸、富马酸、丙二酸、酒石酸、柠檬酸、邻氯苯胺、2,2'-联吡啶、4,4'-联吡啶、2,6-吡啶二甲酸、丙酮酸、聚苯乙烯磺酸、聚磺酸、谷氨酸、水杨酸、天冬氨酸、2-氨基乙基膦酸、赖氨酸、精氨酸、异亮氨酸、肌氨酸、鸟氨酸、鸟苷、瓜氨酸、酪氨酸、缬氨酸、次黄质、蛋氨酸、赖氨酸和亮氨酸。据称所述氧化铈基CMP淤浆导致有效的高速操作、更容易的过程管理和更小的膜厚度波动(由于图案密度差异所导致)。
美国专利申请US2008/0085602A1和US2008/0124913A1公开了氧化铈基CMP淤浆,其包含0.001-0.1重量%的选自氧化乙烯-氧化丙烯-氧化乙烯三嵌段共聚物和聚丙烯酸的非离子表面活性剂作为分散剂。据称所述氧化铈基淤浆具有高氧化硅和氮化硅对多晶硅的选择性。
电子器件,尤其是半导体集成电路(IC)的制造需要尤其涉及高选择性CMP的高精度方法。
尽管现有技术的氧化铈基CMP淤浆可具有令人满意的氧化物对多晶硅的选择性且可获得具有良好的全局和局部平坦度的抛光晶片(例如晶片内非均匀性(WIWNU)和晶片间非均匀性(WTWNU)),但IC构造,尤其是具有LSI(大规模集成)或VLSI(超大规模集成)的IC的不断减小的尺寸需要持续改善氧化铈基CMP淤浆,以满足集成电路器件制造商日益提高的技术和经济要求。
然而,该持续改善现有技术氧化铈基CMP淤浆的迫切需要不仅适用于集成电路器件领域,而且也必须改善在制造其他电子器件的领域中的抛光和平坦化功效,所述其他电子器件如液晶面板、有机电致发光面板、印刷电路板、微机械、DNA芯片、微装置、光伏电池和磁头;以及高精度机械器件和光学器件,尤其是光学玻璃如光掩模、透镜和棱镜;无机导电膜如氧化铟锡(ITO);光集成电路、光开关元件、光波导、光学单晶如光纤端面和闪烁体、固态激光器单晶、用于蓝色激光LED的蓝宝石衬底、半导体单晶和用于磁盘的玻璃基材。这类电子和光学器件的制造也需要高精度CMP工艺步骤。
欧洲专利申请EP1338636A1公开了一种氧化铈基CMP淤浆,其包含选自纤维素、结晶纤维素、纤维素衍生物、二氧化硅、藻酸盐、β-萘磺酸盐福尔马林缩合物、磷酸氢钙、蛋白质、多肽和有机高分子絮凝剂的抗凝固剂,以及分散剂或表面活性剂如缩合磷酸盐,如焦磷酸、焦磷酸钠、三聚磷酸钠或六偏磷酸钠。然而,其仅公开了玻璃的抛光。
日本专利申请JP2005-336400A公开了一种氧化铈基CMP淤浆,其包含水溶性缩合磷酸盐,如焦磷酸盐、三聚磷酸盐和六偏磷酸盐;以及水溶性碳酸盐或碳酸氢盐。所述氧化铈基CMP淤浆可进一步包含水溶性有机溶剂,如甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、乙二醇、丙二醇和1,2,3-丙三醇,酮如丙酮和甲乙酮,四氢呋喃、N,N-二甲基甲酰胺、二甲亚砜和1,4-二烷。据称所述氧化铈基CMP淤浆就抛光精度、清洁、初始抛光速率和抛光速率方面而言改善了抛光。然而,其仅公开了玻璃的抛光。
日本专利申请JP2001-240850A公开了一种CMP淤浆,其包含氧化铝、氧化锆或碳化硅作为磨料;氧化烯-氧化乙烯嵌段或无规共聚物作为分散剂,以及磷酸钠或聚磷酸钠作为“防锈剂”。所述CMP淤浆用于抛光硅晶片、玻璃、铝、陶瓷、合成二氧化硅、石英和蓝宝石。
发明目的
因此,本发明的目的是提供一种新型含水抛光组合物,特别是新型化学机械抛光(CMP)组合物,尤其是新型氧化铈基CMP淤浆,其不再具有现有技术抛光组合物的缺陷和缺点。
特别地,所述新型含水抛光组合物,特别是所述新型化学机械抛光(CMP)组合物,尤其是所述新型氧化铈基CMP淤浆应表现出显著改善的氧化物对多晶硅选择性,且获得具有优异的全局和局部平坦度(如晶片内非均匀性(WIWNU)和晶片间非均匀性(WTWNU))的抛光晶片。因此,其应非常适于制造具有尺寸小于50nm的结构的IC构造,尤其是具有LSI(大规模集成)或VLSI(超大规模集成)的IC。
此外,所述新型含水抛光组合物,特别是所述新型化学机械抛光(CMP)组合物,尤其是所述新型氧化铈基CMP淤浆应不仅格外适用于集成电路器件领域,而且也应最有效且有利地适用于其他电子器件的制造领域中,所述其他电子器件如液晶面板、有机电致发光面板、印刷电路板、微机械、DNA芯片、微装置和磁头;以及高精度机械器件和光学器件,尤其是光学玻璃如光掩模、透镜和棱镜;无机导电膜如氧化铟锡(ITO);光集成电路、光开关元件、光波导、光学单晶如光纤端面和闪烁体、固态激光器单晶、用于蓝色激光LED的蓝宝石衬底、半导体单晶和用于磁盘的玻璃基材。
最特别地,所述新型氧化铈基CMP淤浆也应表现出高氮化物对多晶硅选择性和适中的氧化物对氮化物选择性。
本发明的另一目的是提供一种抛光用于机械、电子和光学器件的衬底的新型方法,所述衬底材料包含氧化硅电介质和多晶硅膜,且任选包含氮化硅膜。
发明简述
因此,已发现所述新型含水抛光组合物,所述含水抛光组合物包含:
(A)至少一种磨料颗粒,当其分散于不含组分(C)且pH值为3-9的含水介质中时带正电荷,如电泳迁移率所证实的那样;
(B)至少一种选自线性和支化氧化烯均聚物和共聚物的水溶性或水分散性聚合物;和
(C)至少一种阴离子磷酸盐分散剂。
在下文中,将所述新型含水抛光组合物称为“本发明的组合物”。
此外,已发现所述抛光用于机械、电子和光学器件的衬底的新型方法,包括使所述衬底材料与本发明组合物接触至少一次并抛光所述衬底材料,直至获得所需平坦度。
在下文中,将所述抛光用于机械、电子和光学器件的衬底材料的新型方法称为“本发明的方法”。
本发明的优点
鉴于现有技术,令本领域技术人员惊讶且无法预料的是,本发明的目的可通过本发明的组合物和本发明的方法实现。
特别令人惊讶的是,本发明组合物呈现出显著改善的氧化物对多晶硅的选择性,且获得具有优异全局和局部平坦度的抛光晶片(如晶片内非均匀性(WIWNU)和晶片间非均匀性(WTWNU))。因此,其非常适于制造具有尺寸小于50nm的结构的IC构造,尤其是具有LSI(大规模集成)或VLSI(超大规模集成)的IC。
此外,本发明组合物在长期运输和储存期间稳定,该稳定性显著改善了后勤和过程管理。
此外,本发明组合物不仅格外适用于集成电路器件领域,而且最有效且有利地适用于制造其他电子器件的领域中,所述其他电子器件如液晶面板、有机电致发光面板、印刷电路板、微机械、DNA芯片、微装置和磁头;以及高精度机械器件和光学器件,尤其是光学玻璃如光掩模、透镜和棱镜;无机导电膜如氧化铟锡(ITO);光集成电路、光开关元件、光波导、光学单晶如光纤端面和闪烁体、固态激光器单晶、用于蓝色激光LED的蓝宝石衬底、半导体单晶和用于磁盘的玻璃基材。
最特别地,本发明组合物也表现出高氮化物对多晶硅选择性和适中的氧化物对氮化物选择性。
因此,本发明组合物最特别地适用于本发明方法。本发明方法可最有利地用于抛光(尤其是化学机械抛光)电子器件的衬底材料,所述电子器件如液晶面板、有机电致发光面板、印刷电路板、微机械、DNA芯片、微装置和磁头;以及高精度机械器件和光学器件,尤其是光学玻璃如光掩模、透镜和棱镜;无机导电膜如氧化铟锡(ITO);光集成电路、光开关元件、光波导、光学单晶如光纤端面和闪烁体、固态激光器单晶、用于蓝色激光LED的蓝宝石衬底、半导体单晶和用于磁盘的玻璃基材。
然而,最特别地是,本发明方法非常适于抛光包含氧化硅电介质和多晶硅膜且任选包含氮化硅膜的半导体晶片。本发明方法获得无蝶形缺陷、杯形缺陷(cupping)或热点的优异全局和局部平坦度和均衡性的抛光晶片,如晶片内非均匀性(WIWNU)和晶片间非均匀性(WTWNU)所例示。因此,其非常适于制造具有尺寸小于50nm的结构的IC构造,尤其是具有LSI(大规模集成)或VLSI(超大规模集成)的IC。
发明详述
本发明的组合物为含水组合物。这意指其包含水,尤其是超纯水作为主溶剂和分散剂。然而,本发明组合物可包含至少一种水溶混性有机溶剂,但所述有机溶剂的量仅为不改变本发明组合物的水性特性的少量。
本发明组合物优选包含其量为60-99.95重量%,更优选70-99.9重量%,甚至更优选80-99.9重量%,最优选90-99.9重量%的水,所述重量百分比基于本发明组合物的总重量。
“水溶性”意指本发明组合物的有关组分或成分可以以分子水平溶于水相中。
“水分散性”意指本发明组合物的有关组分或成分可分散于水相中并形成稳定的乳液或悬浮液。
本发明组合物的第一必要成分为至少一种,优选一种磨料颗粒(A)。
当分散于不含下文所述的阴离子磷酸盐分散剂(C)且具有3-9的pH值的含水介质中时,磨料颗粒(A)带正电荷。所述正电荷被磨料颗粒(A)的电泳迁移率μ(μm/s)(V/cm)所证实。电泳迁移率μ可使用诸如Malvern,Ltd的Zetasizer Nano的仪器直接测量。
磨料颗粒(A)的平均粒度可在宽范围内变化,且因此可最有利地调节以满足本发明给定组合物和方法的具体要求。由动态激光散射所测定的平均粒度优选为1-2000nm,优选1-1000nm,更优选1-750nm,最优选1-500nm。
磨料颗粒(A)的粒度分布可为单峰、双峰或多峰。粒度分布优选为单峰,从而在本发明方法期间具有易再现的磨料颗粒(A)的综合性质和易再现的条件。
此外,磨料颗粒(A)的粒度分布可为窄或宽的。粒度分布优选为窄的,仅具有少量的小颗粒和大颗粒,从而在本发明方法期间具有易再现的磨料颗粒(A)综合性质和易再现的条件。
磨料颗粒(A)可具有各种形状。因此,其可具有一种或基本上一种形状。然而,磨料颗粒(A)也可具有不同的形状。特别地,本发明给定组合物中可存在两种不同形状的磨料颗粒(A)。至于形状本身,其可为立方体、具有斜边的立方体、八面体、二十面体、球节状和具有或不具有突起或凹陷的球体。所述形状最优选为不具有或仅具有极少突起或凹陷的球体。通常优选该形状,这是因为其通常提高了磨料颗粒(A)在CMP方法期间对其所暴露的机械力的抗性。
原则上,任何类型的磨料颗粒(A)均可用于本发明的组合物中,只要其具有上述综合性质。因此,磨料颗粒(A)可为有机或无机颗粒或有机-无机混杂颗粒。磨料颗粒(A)优选为无机颗粒。
原则上,任何类型的无机磨料颗粒(A)均可用于本发明的组合物中,只要其具有上述综合性质。然而,最优选使用包含氧化铈或由氧化铈构成的无机磨料颗粒(A)。
包含氧化铈的磨料颗粒(A)可含有少量其他稀土金属氧化物。
包含氧化铈的磨料颗粒(A)优选为包含核的复合颗粒,所述核包含至少一种不同于氧化铈的其他磨料颗粒状材料或由其构成,所述其他磨料颗粒材料尤其为氧化铝、二氧化硅二氧化钛、氧化锆、氧化锌及其混合物。
这类复合颗粒(A)例如由如下文献已知:WO2005/035688A1;US6,110,396;US6,238,469B1;US6,645,265B1;K.S.Choi等,Mat.Res.Soc.Symp.Proc.,第671卷,2001Materials Research Society,M5.8.1至M5.8.10;S.-H.Lee等,J.Mater.Res.,第17卷第10期(2002),第2744-2749页;A.Jindal等,Journal of the Electrochemical Society,150(5)G314-G318(2003);Z.Lu,Journal of Materials Research,第18卷第10期,2003年10月,MaterialsResearch Society或S.Hedge等,Electrochemical and Solid-State Letters,7(12)G316-G318(2004)。
复合颗粒(A)最优选为包含选自氧化铝、二氧化硅二氧化钛、氧化锆、氧化锌及其混合物且具有20-100nm核尺寸的核的悬钩子型涂覆颗粒,其中所述核涂覆有粒度小于10nm的氧化铈颗粒。
本发明组合物中所用的磨料颗粒(A)的量可在宽范围内变化,且因此可最有利地调节以满足本发明给定组合物和方法的具体要求。本发明组合物优选包含0.005-10重量%,更优选0.01-8重量%,最优选0.01-6重量%的磨料颗粒(A),所述重量百分比基于本发明组合物的总重量。
本发明组合物的第二必要成分为至少一种,优选一种水溶性聚合物(B),其选自线性和支化的氧化烯(优选为氧化乙烯和氧化丙烯)均聚物和共聚物。
优选的氧化乙烯-氧化丙烯共聚物(B)可为含有聚氧化乙烯嵌段和聚氧化丙烯嵌段的无规共聚物、交替共聚物或嵌段共聚物。
在所述氧化乙烯-氧化丙烯嵌段共聚物中,聚氧化乙烯嵌段优选具有10-15的亲水-亲脂平衡(HLB)值。聚氧化丙烯嵌段可具有28-约32的HLB值。
水溶性聚合物(B)为常规且已知的市售材料。合适的水溶性聚合物(B)描述于下列文献中:日本专利申请JP2001-240850A,权利要求2以及第[0007]-[0014]段;美国专利申请US2007/0077865A1,第1页第[0008]段至第2页第[0010]段;美国专利申请US2006/0124594A1,第3页第[0036]段和[0037]段以及美国专利申请US2008/0124913A1,第3页第[0031]-[0033]段以及权利要求14;或者其如BASF Corporation的公司手册“PluronicTM&TetronicTM Block Copolymer Surfactants,1996”或美国专利US2006/0213780A1所示,由BASF Corporation和BASF SE以商品名PluronicTM、TetronicTM和BasensolTM销售。
最优选使用聚乙二醇(PEG)。
本发明组合物中的水溶性聚合物(B)的浓度可在宽范围内变化,且因此可最有利地调节以满足本发明给定组合物和方法的具体要求。本发明组合物优选包含其量为0.001-5重量%,更优选0.005-2.5重量%,甚至更优选0.0075-1重量%,最优选0.0075-0.5重量%的水溶性聚合物(B)。
本发明组合物包含至少一种,优选一种阴离子磷酸盐分散剂(C)。
阴离子磷酸盐分散剂(C)优选选自水溶性缩合磷酸盐。
水溶性缩合磷酸盐(C)的实例为通式I的偏磷酸盐,尤其是铵盐、钠盐和钾盐:
[M+ n(PO3)n] (I)
以及通式II和III的聚磷酸盐:
M+ nPnO3n+1 (II)
M+H2PnO3n+1 (III)
其中M为铵、钠和钾且指数n为2-10,000。就式I、II和III的聚磷酸盐而言,指数n优选为2-2,000,更优选2-300,最优选2-50,尤其是2-15,例如3-8。
特别合适的水溶性缩合磷酸盐(C)的实例为格雷姆盐(NaPO3)40-50、CalgonTM(NaPO3)15-20、Kurrol盐(NaPO3)n(其中n=约5000)以及六偏磷酸铵、六偏磷酸钠和六偏磷酸钾。
本发明组合物中的水溶性阴离子磷酸盐分散剂(C)的浓度可在宽范围内变化,且因此可最有利地调节以满足本发明给定组合物和方法的具体要求。优选地,以使得氧化铈与阴离子磷酸盐分散剂(C)的重量比为10-2000,更优选为20-1000的量使用阴离子磷酸盐分散剂(C)。
本发明组合物可任选包含至少一种不同于成分或组分(A)、(B)和(C)的功能组分(D)。
功能组分(D)优选选自通常用于氧化铈基CMP淤浆中的化合物。这类化合物(D)的实例描述于开头且例如公开于如下文献中:Y.N.Prasad等,Electrochemical and Solid-State Letters,9(12)G337-G339(2006);Hyun-Goo Kang等,Journal of Material Research,第22卷第3期,2007,第777-787页;S.Kim等,Journal of Colloid and Interface Science,319(2008),第48-52页;S.V.Babu等,Electrochemical and Solid-State Letters,7(12)G327-G330(2004);Jae-Dong Lee等,Journal of the ElectrochemicalSociety,149(8)G477-G481,2002;美国专利US5,738,800、US6,042,741、US6,132,637、US6,218,305B、US5,759,917、US6,689,692B1、US6,984,588B2、US6,299,659B1、US6,626,968B2、US6,436,835B1、US6,491,843B1、US6,544,892B2、US6,627,107B2、US6,616,514B1和US7,071,105B2;美国专利申请US2002/0034875A1、US2006/0144824A1、US2006/0207188A1、US2006/0216935A1、US2007/0077865A1、US2007/0175104A1、US2007/0191244A1和US2007/0218811A1;以及日本专利申请JP2005-336400A。
此外,功能组分(D)选自如下组:不同于颗粒(D)的有机、无机和有机-无机混杂磨料颗粒;具有最低临界溶解温度LCST或最高临界溶解温度UCST的材料;氧化剂;钝化剂;电荷反转剂;具有至少3个在含水介质中不可离解的羟基的有机多元醇;由至少一种具有至少3个在含水介质中不可离解的羟基的单体所形成的聚合物;络合剂或螯合剂;摩擦剂;稳定剂;流变剂;表面活性剂;金属阳离子和有机溶剂。
合适的有机磨料颗粒(D)及其有效量例如由美国专利申请US2008/0254628A1第4页第[0054]段或国际申请WO2005/014753A1知晓,其中其公开了由三聚氰胺和三聚氰胺衍生物(如乙酰胍胺、苯并胍胺和双氰胺)构成的固体颗粒。
合适的无机磨料颗粒(D)及其有效量例如由国际专利申请WO2005/014753A1第12页第1-8行或美国专利US6,068,787第6栏第41行至第7栏第65行知晓。
合适的有机-无机混杂磨料颗粒(D)及其有效量例如由美国专利申请US2008/0254628A1第4页第[0054]段或US2009/0013609A1第3页第[0047]段至第6页第[0087]段知晓。
合适的氧化剂(D)及其有效量例如由欧洲专利申请EP1 036 836A1第8页第[0074]段和第[0075]段或美国专利US6,068,787第4栏第40行至第7栏第45行或US7,300,601B2第4栏第18-34行知晓。优选使用有机和无机过氧化物,更优选使用无机过氧化物。特别地,使用过氧化氢。
合适的钝化剂(D)及其有效量例如由美国专利US7,300,601B2第3栏第59行至第4栏第9行或美国专利申请US2008/0254628A1桥接第4页和第5页的第[0058]段知晓。
合适的络合剂或螯合剂(D),其有时也称为摩擦剂(参见美国专利申请US2008/0254628A1第5页第[0061]段)或蚀刻剂(参见美国专利申请US2008/0254628A1第4页第[0054]段)及其有效量例如由美国专利US7,300,601B2第4栏第35-48行知晓。最特别优选使用氨基酸,尤其是甘氨酸,以及此外双氰胺和含有至少1个,优选2个,更优选3个伯氨基的三嗪类,如三聚氰胺和水溶性胍胺类,尤其是三聚氰胺、甲酰胍胺、乙酰胍胺和2,4-二氨基-6-乙基-1,3,5-三嗪。
合适的稳定剂(D)及其有效量例如由美国专利US6,068,787第8栏第4-56行知晓。
合适的流变剂(D)及其有效量例如由美国专利申请US2008/0254628A1第5页第[0065]段至第6页第[0069]段知晓。
合适的表面活性剂(D)及其有效量例如由国际专利申请WO2005/014753A1第8页第23行至第10页第17行或美国专利US7,300,601B2第5栏第4行至第6栏第8行知晓。
合适的多价金属离子(D)及其有效量例如由欧洲专利申请EP1 036836A1第8页第[0076]段至第9页第[0078]段知晓。
合适的有机溶剂(D)及其有效量例如由美国专利US7,361,603B2第7栏第32-48行或美国专利申请US2008/0254628A1第5页第[0059]段知晓。
具有最低临界溶解温度LCST或最高临界溶解温度UCST的合适材料(D)例如描述于下列文献中:H.Mori,H.Iwaya,A.Nagai和T.Endo的论文Controlled synthesis of thermoresponsive polymers derived fromL-proline via RAFT polymerization,Chemical Communication,2005,4872-4874;或D.Schmalj ohann的论文,Thermo-and pH-responsivepolymers and drug delivery,Advanced Drug Delivery Reviews,第58卷(2006),1655-1670或美国专利申请US2002/0198328A1、US2004/0209095A1、US2004/0217009A1、US2006/0141254A1、US2007/0029198A1、US2007/0289875A1、US2008/0249210A1、US2008/0050435A1或US2009/0013609A1;美国专利US5,057,560、US5,788,82和US6,682,642B2;国际专利申请WO01/60926A1、WO2004/029160A1、WO2004/0521946A1、WO2006/093242A2或WO2007/012763A1;欧洲专利申请EP0583814A1、EP1197587B1和EP1942179A1;或德国专利申请DE2610705。
原则上,可使用任何已知的通常用于CMP领域中的电荷反转剂(D)。电荷反转剂(D)优选选自含有至少一个选自羧酸根、亚磺酸根、硫酸根和膦酸根的阴离子基团的单体化合物、低聚化合物和聚合化合物。
如果存在的话,功能组分(D)的含量可变化。(D)的总量优选不超过10wt%(“wt%”意指“重量百分比”),更优选不超过2wt%,最优选不超过0.5wt%,特别是不超过0.1wt%,例如不超过0.01wt%,基于相应CMP组合物的总重量。(D)的总量优选为至少0.0001wt%,更优选至少0.001wt%,最优选至少0.008wt%,尤其是至少0.05wt%,例如至少0.3wt%,基于相应组合物的总重量。
本发明组合物可任选包含至少一种实质上不同于成分(A)、(B)和(C)的pH调节剂或缓冲剂(E)。
合适的pH调节剂或缓冲剂(E)及其有效量例如由欧洲专利申请EP1036 836A1第8页第[0080]、[0085]段和第[0086]段;国际专利申请WO2005/014753A1第12页第19-24行;美国专利申请US2008/0254628A1第6页第[0073]段或美国专利US7,300,601B2第5栏第33-63行知晓。pH调节剂或缓冲剂(E)的实例为氢氧化钾、氢氧化铵、氢氧化四甲铵(TMAH)、硝酸和硫酸。
如果存在的话,则pH调节剂或缓冲剂(E)的含量可变化。(E)的总量优选不超过20wt%,更优选不超过7wt%,最优选不超过2wt%,尤其是不超过0.5wt%,例如不超过0.1wt%,基于相应CMP组合物的总重量。(E)的总量优选为至少0.001wt%,更优选为至少0.01wt%,最优选为至少0.05wt%,尤其是至少0.1wt%,例如至少0.5wt%,基于相应组合物的总重量。
优选地,通过使用上述pH调节剂(E)将本发明组合物的pH值设定为3-10,更优选3-8,甚至更优选3-7,最优选5-7。
本发明组合物的制备没有任何特殊性,而是可通过将上述成分(A)、(B)和(C)以及任选的(D)和/或(E)溶解或分散于含水介质,尤其是去离子水中而进行。为此,可使用常规和标准的混合方法和混合设备,如搅拌釜、在线溶解器、高剪切高速搅拌机、超声混合器、均化器喷嘴或对流式混合器。由此获得的本发明组合物优选可滤经具有适当筛孔的过滤器,以移除粗粒状颗粒,如细分散的固体磨料颗粒(A)的附聚体或聚集体。
本发明组合物非常适于本发明的方法。
在本发明方法中,使电子、机械和光学器件,尤其是电子器件,最优选集成电路器件的衬底材料与本发明的组合物接触至少一次并抛光,尤其是化学机械抛光,直至获得所需平坦度。
本发明方法在具有由低k或超低k氧化硅材料构成的隔离层和多晶硅层且任选包含氮化硅层的硅半导体晶片的CMP中表现出其特殊优势。
合适的低k或超低k材料及制备绝缘介电层的合适方法例如描述于美国专利申请US2005/0176259A1第2页第[0025]-[0027]段、US2005/0014667A1第1页第[0003]段、US2005/0266683A1第1页第[0003]段和第2页第[0024]段或US2008/0280452A1第[0024]-[0026]段或美国专利US7,250,391B2第1栏第49-54行或欧洲专利申请EP1306415A2第4页第[0031]段中。
本发明的方法尤其适于需要在图案化晶片衬底上相对于多晶硅选择性移除二氧化硅的浅槽隔离(STI)。在该方法中,用介电材料如二氧化硅过量填充经蚀刻的沟槽,并使用氮化硅阻挡膜作为停止层而抛光。在该优选的实施方案中,在从阻挡膜清除二氧化硅同时使暴露的多晶硅和沟槽氧化硅移除降至最低的情况下结束本发明方法。
此外,本发明方法也特别适于其中也存在氮化硅层的浅槽隔离(STI),这是因为本发明组合物表现出高氧化物对多晶硅的选择性,且兼具适中的氧化物对氮化物的选择性。
因此,本发明的方法表现出大于50,优选大于75,最优选大于100的氧化物对多晶硅选择性以及大于10,优选大于20,最优选大于25的氮化物对多晶硅选择性。
氧化物对氮化物的选择性优选为3-10。
氮化物对多晶硅的选择性优选>10。
本发明方法没有特殊性,而是可用通常用于具有IC的半导体晶片制造中的CMP的方法和设备进行。
正如本领域所已知的那样,用于CMP的典型设备由覆盖有抛光垫的旋转平台构成。将晶片以其上面朝下面向抛光垫的方式安装在载体或夹头上。载体将晶片固定在水平位置。抛光和夹持装置的该特殊设置也称为硬平台设计。载体可保持位于载体保留表面与未抛光晶片表面之间的载体垫。该垫可充当晶片的缓冲垫。
在载体下方,通常也水平放置较大直径的平台并提供与待抛光晶片表面平行的表面。其抛光垫在平坦化工艺期间与晶片表面接触。在本发明的CMP方法期间,本发明组合物以连续流形式或以逐滴方式施加至抛光垫上。
使载体与平台二者围绕由所述载体和平台垂直延伸的相应轴旋转。旋转的载体轴可相对于旋转的平台保持固定或者可相对于平台水平摆动。载体的旋转方向通常(但并非必须)与平台的旋转方向相同。载体和平台的旋转速率通常(但并非必须)设定为不同值。
平台的温度通常设定为10-70°C的温度。
进一步的细节参见国际专利申请WO2004/063301A1,尤其是第16页第[0036]段至第18页第[0040]段以及图1。
借助本发明的方法可获得具有包含图案化多晶硅以及低k和超低k材料层(尤其是二氧化硅层)的IC的半导体晶片,其具有优异的平坦度。因此,可获得也具有优异平坦度的铜镶嵌图案,且在成品中,IC具有优异的电功能性。
对比实验的实施例
实施例1
含水抛光组合物1-6的制备
为了制备含水抛光组合物1-6,将氧化铈(由动态激光散射测得的平均粒度d50为120-140nm)、聚乙二醇(PEG10K;重均分子量:10,000)和六偏磷酸钠(PP;氧化铈与PP的重量比=200,下文称为PP200)分散或溶解于超纯水中。用量汇总于表1中。
表1:含水抛光组合物1-6的组成
组合物编号 | 氧化铈,重量% | PEG10K,重量% | PP200 | pH |
1(对比例) | 0.5 | - | - | 5.5 |
2(对比例) | 0.5 | 0.01 | - | 5.5 |
3(对比例) | 0.5 | 0.1 | - | 5.5 |
4(对比例) | 0.5 | - | + | 6.7 |
5(本发明) | 0.5 | 0.01 | + | 6.7 |
6(本发明) | 0.5 | 0.1 | + | 6.7 |
实施例2和3以及对比实施例C1-C4
硅半导体晶片上的多晶硅层的CMP
实施例2使用实施例1中的组合物5。实施例3使用实施例1中的组合物6。
对比实验C1-C4分别使用实施例1中的组合物1-4。
在下文中,使用如下CMP工艺参数:
-抛光设备:Strasbaugh6EGnHance(旋转型);
-平台速率:90rpm;
-载体速率:70rpm;
-由Rohm&Haas生产的IC1000/Suba400K凹槽抛光垫;
-使用S603M金刚石调节剂原位调节;
-淤浆流动速率:200ml/分钟;
-衬底:200mm热氧化物、PETEOS、氮化硅和多晶硅晶片;
-下压力:3.5psi(240毫巴);
-抛光时间:1分钟。
通过激光干涉仪(FilmTekTM2000)在多晶硅晶片中心的一个位置(位置1)和位于位置1周围且与晶片边缘的距离相同的4个位置(位置2-5)处测量多晶硅材料移除速率MRR。
在下文中,将表现出较高的MRR的位置称为“热点”。
表2提供了所得MRR的总结。
表2:多晶硅材料移除速率MRR热点的出现
表2的结果清楚显示:当组合物仅包含氧化铈时,多晶硅的MRR非常高。添加PEG10K使平均MRR降低。然而,正如热点外观所证实的那样,观察到多晶硅的非均匀移除。PEG10K浓度升高导致范围缩减和MRR降低。添加PP200也导致MRR降低,这可由PEG10K和PP200的协同作用加以抑制。
除此之外,与对比实验相比,在实验2和3中,晶片上吸收的颗粒数量显著更低。
实施例4和5
包含PP200和PEG10K的含水抛光组合物的选择性
实施例4使用实施例1的含水抛光组合物5。
实施例5使用包含0.25重量%氧化铈以及0.05重量%PEG10K和PP200的抛光组合物。
用所述方法测定热氧化物(TOX)、PETEOS、氮化硅和多晶硅晶片的MRR。所得MRR汇总于表3中。
表3:热氧化物(TOX)、PETEOS、氮化硅(SiN)和多晶硅(PSi)晶片的MRR
计算后的选择性汇总于表4中。
表4:氧化物对多晶硅(PSi)、氧化物对氮化硅(SiN)以及氮化物对多晶硅(SiN:PSi)的选择性
所述结果显示所述含水抛光组合物非常适于含有二氧化硅、氮化硅和多晶硅层的半导体晶片的CMP。因此,氧化物对多晶硅的选择性格外高,而氧化物对氮化物的选择性处于可避免在含有二氧化硅、氮化硅和多晶硅区域的全局平坦化、异质、图案化表面中形成碟形缺陷和其他破坏及缺陷的有利范围内。此外,氮化物对多晶硅的选择性远高于10。
在CMP以后,观察晶片是否形成不希望的残留膜。然而,并未形成不希望的残留膜。
实施例6-9
包含0.5重量%氧化铈、0.1重量%PEG10K和不同量的PP的含水抛光组合物的选择性
用所述方法测定氧化铈对PP的比例对热氧化物(TOX)、PETEOS、氮化硅和多晶硅晶片的影响。所得MRR汇总于表5中。
表5:氧化铈对PP的比例对热氧化物(TOX)、PETEOS、氮化硅(SiN)和多晶硅(PSi)晶片的影响
计算后的选择性汇总于表6中。
表6:氧化物对多晶硅(PSi)、氧化物对氮化物(SiN)以及氮化物对多晶硅(SiN:PSi)的选择性
所述结果显示可通过改变氧化铈对PP的比例有利地调节MRR和选择性。可获得格外高的氧化物对多晶硅的选择性以及高氮化物对多晶硅的选择性,而氧化物对氮化物的选择性保持在可避免在含有二氧化硅、氮化硅和多晶硅区域的全局平坦化、异质、图案化表面中形成碟形缺陷以及其他破坏和缺陷的有利范围内。
Claims (19)
1.一种含水抛光组合物,所述含水抛光组合物包含:
(A)至少一种磨料颗粒,当其分散于不含组分(C)且pH值为3-9的含水介质中时带正电荷,如电泳迁移率所证实的那样;
(B)至少一种选自线性和支化氧化烯均聚物和共聚物的水溶性聚合物;和
(C)至少一种阴离子磷酸盐分散剂。
2.根据权利要求1的含水抛光组合物,其特征在于磨料颗粒(A)包含氧化铈或由氧化铈构成。
3.根据权利要求1或2的含水抛光组合物,其特征在于其包含0.005-10重量%的磨料颗粒(A),基于所述抛光组合物的总重量。
4.根据权利要求1-3中任一项的含水抛光组合物,其特征在于线性和支化氧化烯均聚物和共聚物(B)选自氧化乙烯和氧化丙烯的均聚物及共聚物。
5.根据权利要求4的含水抛光组合物,其特征在于其包含聚乙二醇PEG作为氧化乙烯均聚物(B)。
6.根据权利要求1-5中任一项的含水抛光组合物,其特征在于阴离子磷酸盐分散剂(C)选自水溶性缩合磷酸盐。
7.根据权利要求6的含水抛光组合物,其特征在于水溶性缩合磷酸盐(C)选自如下组:
通式I的偏磷酸盐:
[M+ n(PO3)n] (I)
以及通式II和III的聚磷酸盐:
M+ nPnO3n+1 (II)
M+H2PnO3n+1 (III)
其中M为铵、钠和钾且指数n为2-10,000。
8.根据权利要求1-7中任一项的含水抛光组合物,其特征在于其包含至少一种不同于组分(A)、(B)和(C)的pH调节剂或缓冲剂(E)。
9.根据权利要求1-8中任一项的含水抛光组合物,其特征在于其包含至少一种不同于组分(A)、(B)和(C)的功能组分(D)。
10.根据权利要求9的含水抛光组合物,其特征在于功能组分(D)选自如下组:不同于颗粒(A)的有机、无机和有机-无机混杂磨料颗粒、具有最低临界溶解温度LCST或最高临界溶解温度UCST的材料、氧化剂、钝化剂、电荷反转剂、具有至少2个在所述含水介质中不可离解的羟基的有机多元醇、由至少一种具有至少2个在所述含水介质中不可离解的羟基的单体所形成的低聚物和聚合物、络合剂或螯合剂、摩擦剂、稳定剂、流变剂、表面活性剂、金属阳离子和有机溶剂。
11.根据权利要求1-10中任一项的含水抛光组合物,其特征在于pH值为3-10。
12.一种抛光用于电子、机械和光学器件的衬底的方法,包括使所述衬底与含水抛光组合物接触至少一次并抛光该衬底材料,直至获得所需的平坦度,其特征在于使用如权利要求1-11中任一项的含水抛光组合物。
13.根据权利要求12的方法,其特征在于所述衬底包含至少一个含有至少一种氧化硅电介质材料或由至少一种氧化硅电介质材料构成的层和至少一个含有多晶硅或由多晶硅构成的层。
14.根据权利要求13的方法,其特征在于氧化物对多晶硅的选择性大于50。
15.根据权利要求14的方法,其特征在于所述衬底材料额外包含至少一个含有氮化硅或由氮化硅构成的层。
16.根据权利要求15的方法,其特征在于氧化物对氮化物的选择性为3-6。
17.根据权利要求15或16的方法,其特征在于氮化物对多晶硅的选择性>10。
18.根据权利要求12-17中任一项的方法,其特征在于所述电子器件为集成电路器件、液晶面板、有机电致发光面板、印刷电路板、微机械、DNA芯片、微装置和磁头;所述机械器件为高精度机械器件;且所述光学器件为光学玻璃如光掩模、透镜和棱镜,无机导电膜如氧化铟锡(ITO),光集成电路,光开关元件,光波导,光学单晶如光纤端面和闪烁体,固态激光器单晶,用于蓝色激光LED的蓝宝石衬底,半导体单晶和用于磁盘的玻璃基材。
19.根据权利要求18的方法,其特征在于所述集成电路器件包含具有尺寸小于50nm的结构且具有大规模集成度或超大规模集成度的集成电路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38071910P | 2010-09-08 | 2010-09-08 | |
US61/380,719 | 2010-09-08 | ||
PCT/IB2011/053867 WO2012032451A1 (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103080256A true CN103080256A (zh) | 2013-05-01 |
CN103080256B CN103080256B (zh) | 2015-06-24 |
Family
ID=44773986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180041503.8A Expired - Fee Related CN103080256B (zh) | 2010-09-08 | 2011-09-05 | 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US20130168348A1 (zh) |
EP (1) | EP2428541B1 (zh) |
JP (1) | JP5965906B2 (zh) |
KR (1) | KR101906135B1 (zh) |
CN (1) | CN103080256B (zh) |
IL (1) | IL224645A (zh) |
MY (1) | MY175638A (zh) |
RU (1) | RU2573672C2 (zh) |
SG (2) | SG10201606566SA (zh) |
TW (1) | TWI525164B (zh) |
WO (1) | WO2012032451A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106104763A (zh) * | 2014-03-11 | 2016-11-09 | 嘉柏微电子材料股份公司 | 用于钨化学机械抛光的组合物 |
CN107011805A (zh) * | 2015-09-25 | 2017-08-04 | 优备材料有限公司 | 浆料和使用其的衬底抛光方法 |
CN108026434A (zh) * | 2015-09-25 | 2018-05-11 | 荣昌化学制品株式会社 | Cmp用浆料组合物及利用该组合物的抛光方法 |
CN108587478A (zh) * | 2018-07-03 | 2018-09-28 | 中国人民解放军国防科技大学 | 一种改性纳米二氧化硅复合抛光液及其应用 |
CN109153888A (zh) * | 2016-05-16 | 2019-01-04 | 凯斯科技股份有限公司 | 高阶梯差抛光料浆组合物 |
CN113549399A (zh) * | 2021-08-03 | 2021-10-26 | 万华化学集团电子材料有限公司 | 适用于硅片粗抛光的化学机械抛光组合物及其应用 |
CN114729229A (zh) * | 2019-10-24 | 2022-07-08 | 弗萨姆材料美国有限责任公司 | 高氧化物去除速率浅沟隔离化学机械平面化组合物 |
CN115160933A (zh) * | 2022-07-27 | 2022-10-11 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103249789B (zh) | 2010-10-07 | 2016-01-13 | 巴斯夫欧洲公司 | 含水抛光组合物及化学机械抛光具有图案化或未图案化低k电介质层的基材的方法 |
WO2012077063A1 (en) | 2010-12-10 | 2012-06-14 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
KR20140059230A (ko) | 2011-09-07 | 2014-05-15 | 바스프 에스이 | 글리코시드를 포함하는 화학 기계 연마 (cmp) 조성물 |
EP2794733B1 (en) * | 2011-12-21 | 2019-05-15 | Basf Se | Method for manufacturing cmp composition and application thereof |
CN104178033A (zh) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | 纳米二氧化铈抛光液组合物 |
US20150104940A1 (en) | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
EP3080240A4 (en) * | 2013-12-11 | 2017-07-19 | FujiFilm Electronic Materials USA, Inc. | Cleaning formulation for removing residues on surfaces |
US9551075B2 (en) * | 2014-08-04 | 2017-01-24 | Sinmat, Inc. | Chemical mechanical polishing of alumina |
CN107851568B (zh) | 2015-07-13 | 2021-10-08 | Cmc材料股份有限公司 | 用于加工介电基板的方法及组合物 |
KR101871569B1 (ko) * | 2016-02-25 | 2018-08-02 | 삼성에스디아이 주식회사 | 이방 도전성 필름 및 이에 의해 접속된 디스플레이 장치 |
US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
JP6761339B2 (ja) | 2016-12-28 | 2020-09-23 | 花王株式会社 | 酸化セリウム砥粒 |
US10711159B2 (en) | 2016-12-30 | 2020-07-14 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions |
US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
WO2018179061A1 (ja) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
KR102296085B1 (ko) | 2019-07-01 | 2021-09-01 | 남기호 | 스마트 트램폴린 및 스마트 트램폴린을 이용한 건강관리 시스템 |
US20210062043A1 (en) * | 2019-09-04 | 2021-03-04 | Cabot Microelectronics Corporation | Composition and method for polysilicon cmp |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1251380A (zh) * | 1998-10-05 | 2000-04-26 | Tdk株式会社 | 磨料料浆及其制备方法 |
CN1654585A (zh) * | 2005-01-17 | 2005-08-17 | 上海大学 | 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法 |
Family Cites Families (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2610705C3 (de) | 1976-03-13 | 1978-10-19 | Henkel Kgaa, 4000 Duesseldorf | Saure galvanische Kupferbäder |
US5478882A (en) | 1987-09-21 | 1995-12-26 | The Geon Company | Articles from reinforced plasticized polyvinyl halide resin |
US5057560A (en) | 1987-10-05 | 1991-10-15 | Ciba-Geigy Corporation | Thermotropic copolymer hydrogels from N,N-dimethylacrylamide and methoxy-ethyl (meth) acrylate |
FR2694939B1 (fr) | 1992-08-20 | 1994-12-23 | Schlumberger Cie Dowell | Polymères thermoviscosifiants, leur synthèse et leurs applications notamment dans l'industrie pétrolière. |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6110396A (en) | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
JP3672493B2 (ja) | 1998-02-24 | 2005-07-20 | 昭和電工株式会社 | 半導体装置研磨用研磨材組成物及びそれを用いた半導体装置の製造方法 |
US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
US6299659B1 (en) | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
TWI267549B (en) | 1999-03-18 | 2006-12-01 | Toshiba Corp | Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded wiring |
US6110832A (en) * | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
US7425581B2 (en) | 1999-07-30 | 2008-09-16 | Universiteit Utrecht | Temperature sensitive polymers |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
DE10006538C2 (de) | 2000-02-15 | 2002-11-28 | Forsch Pigmente Und Lacke E V | Verfahren zur Beschichtung von Partikeln mit LCST-Polymeren |
JP2001240850A (ja) | 2000-02-29 | 2001-09-04 | Sanyo Chem Ind Ltd | 研磨用砥粒分散剤および研磨用スラリー |
KR100378180B1 (ko) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
TWI281493B (en) | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
KR100852636B1 (ko) | 2000-10-13 | 2008-08-18 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 시드 보충 및 전기도금조 |
US7037352B2 (en) * | 2000-12-12 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Polishing particle and method for producing polishing particle |
FR2824832B1 (fr) | 2001-05-16 | 2005-05-27 | Oreal | Polymeres hydrosolubles a squelette hydrosoluble et a unites laterales a lcst, leur procede de preparation, compositions aqueuses les contenant, et leur utilisation dans le domaine cosmetique |
DE10152993A1 (de) | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
WO2003078947A2 (en) | 2002-03-15 | 2003-09-25 | The Penn State Research Foundation | Method for control of temperature-sensitivity of polymers in solution |
JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
US6645265B1 (en) | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
GB2393447B (en) * | 2002-08-07 | 2006-04-19 | Kao Corp | Polishing composition |
DE10243438A1 (de) | 2002-09-18 | 2004-03-25 | Merck Patent Gmbh | Oberflächenmodifizierte Effektpigmente |
DE10254430A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
DE10254432A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
JP4363890B2 (ja) * | 2003-04-30 | 2009-11-11 | 共栄社化学株式会社 | 水系研磨加工液 |
KR100539983B1 (ko) | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
KR101123210B1 (ko) | 2003-07-09 | 2012-03-19 | 다이니아 케미컬스 오이 | 화학적 기계적 평탄화용 비-중합성 유기 입자 |
CA2532114A1 (en) * | 2003-07-11 | 2005-01-27 | W.R. Grace & Co.-Conn. | Abrasive particles for chemical mechanical polishing |
KR100574225B1 (ko) | 2003-10-10 | 2006-04-26 | 요업기술원 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
DE10358092A1 (de) | 2003-12-10 | 2005-07-14 | Merck Patent Gmbh | Oberflächenmodifizierte Partikel |
KR100640600B1 (ko) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
US20070240366A1 (en) * | 2004-05-19 | 2007-10-18 | Nissan Chemical Industries, Ltd | Composition for Polishing |
JP4420391B2 (ja) | 2004-05-28 | 2010-02-24 | 三井金属鉱業株式会社 | セリウム系研摩材 |
US7026441B2 (en) | 2004-08-12 | 2006-04-11 | Intel Corporation | Thermoresponsive sensor comprising a polymer solution |
US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
WO2006035779A1 (ja) * | 2004-09-28 | 2006-04-06 | Hitachi Chemical Co., Ltd. | Cmp研磨剤及び基板の研磨方法 |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
TW200632147A (zh) | 2004-11-12 | 2006-09-16 | ||
KR100674927B1 (ko) | 2004-12-09 | 2007-01-26 | 삼성전자주식회사 | Cmp용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법 |
JP4131270B2 (ja) | 2005-03-01 | 2008-08-13 | トヨタ自動車株式会社 | 車輌の制駆動力制御装置 |
US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
US20060216935A1 (en) | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
JP3929481B2 (ja) * | 2005-04-04 | 2007-06-13 | 昭和電工株式会社 | 酸化セリウム系研磨材、その製造方法及び用途 |
FR2889194A1 (fr) | 2005-07-27 | 2007-02-02 | Rhodia Chimie Sa | Copolymere a blocs comprenant un bloc lcst presentant une temperature inferieur critique de solubilite, formulations comprenant le copolymere et utilisation pour vectoriser un ingredient actif |
JP2009503910A (ja) | 2005-08-05 | 2009-01-29 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属フィルム平坦化用高スループット化学機械研磨組成物 |
KR101325856B1 (ko) | 2005-09-30 | 2013-11-05 | 닛산 가가쿠 고교 가부시키 가이샤 | 감열 응답성 고분자를 이용한 구멍 패턴 첨부막을 가지는칩 및 그 제조 방법 |
US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
US20070175104A1 (en) | 2005-11-11 | 2007-08-02 | Hitachi Chemical Co., Ltd. | Polishing slurry for silicon oxide, additive liquid and polishing method |
CN101374922B (zh) | 2006-01-25 | 2013-06-12 | Lg化学株式会社 | 用于抛光半导体晶片的cmp浆料及使用该浆料的方法 |
JP4985409B2 (ja) * | 2006-01-31 | 2012-07-25 | 日立化成工業株式会社 | 絶縁膜研磨用cmp研磨剤、研磨方法、該研磨方法で研磨された半導体電子部品 |
US20070264827A1 (en) * | 2006-05-09 | 2007-11-15 | Promos Technologies Pte. Ltd. | Method for achieving uniform chemical mechanical polishing in integrated circuit manufacturing |
KR100829594B1 (ko) | 2006-10-10 | 2008-05-14 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법 |
WO2008052216A2 (en) | 2006-10-27 | 2008-05-02 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (cmp) processing |
JP2008186898A (ja) * | 2007-01-29 | 2008-08-14 | Nissan Chem Ind Ltd | 研磨用組成物 |
JP4367494B2 (ja) * | 2007-02-09 | 2009-11-18 | 住友電気工業株式会社 | GaAsウエハの化学機械研磨方法 |
WO2008117592A1 (ja) * | 2007-03-26 | 2008-10-02 | Jsr Corporation | 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法 |
KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
-
2011
- 2011-09-05 JP JP2013527714A patent/JP5965906B2/ja not_active Expired - Fee Related
- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en active Application Filing
- 2011-09-05 US US13/821,746 patent/US20130168348A1/en not_active Abandoned
- 2011-09-05 RU RU2013115237/05A patent/RU2573672C2/ru not_active IP Right Cessation
- 2011-09-05 SG SG10201606566SA patent/SG10201606566SA/en unknown
- 2011-09-05 CN CN201180041503.8A patent/CN103080256B/zh not_active Expired - Fee Related
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/ko active IP Right Grant
- 2011-09-05 MY MYPI2015002194A patent/MY175638A/en unknown
- 2011-09-05 SG SG11201606187RA patent/SG11201606187RA/en unknown
- 2011-09-05 EP EP11179985.4A patent/EP2428541B1/en not_active Not-in-force
- 2011-09-06 TW TW100132009A patent/TWI525164B/zh not_active IP Right Cessation
-
2013
- 2013-02-10 IL IL224645A patent/IL224645A/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1251380A (zh) * | 1998-10-05 | 2000-04-26 | Tdk株式会社 | 磨料料浆及其制备方法 |
CN1654585A (zh) * | 2005-01-17 | 2005-08-17 | 上海大学 | 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106104763B (zh) * | 2014-03-11 | 2020-07-21 | 嘉柏微电子材料股份公司 | 用于钨化学机械抛光的组合物 |
CN106104763A (zh) * | 2014-03-11 | 2016-11-09 | 嘉柏微电子材料股份公司 | 用于钨化学机械抛光的组合物 |
CN107011805A (zh) * | 2015-09-25 | 2017-08-04 | 优备材料有限公司 | 浆料和使用其的衬底抛光方法 |
CN108026434A (zh) * | 2015-09-25 | 2018-05-11 | 荣昌化学制品株式会社 | Cmp用浆料组合物及利用该组合物的抛光方法 |
CN107011805B (zh) * | 2015-09-25 | 2020-03-31 | 优备材料有限公司 | 浆料和使用其的衬底抛光方法 |
CN109153888A (zh) * | 2016-05-16 | 2019-01-04 | 凯斯科技股份有限公司 | 高阶梯差抛光料浆组合物 |
CN108587478A (zh) * | 2018-07-03 | 2018-09-28 | 中国人民解放军国防科技大学 | 一种改性纳米二氧化硅复合抛光液及其应用 |
CN108587478B (zh) * | 2018-07-03 | 2020-09-25 | 中国人民解放军国防科技大学 | 一种改性纳米二氧化硅复合抛光液及其应用 |
CN114729229A (zh) * | 2019-10-24 | 2022-07-08 | 弗萨姆材料美国有限责任公司 | 高氧化物去除速率浅沟隔离化学机械平面化组合物 |
CN113549399A (zh) * | 2021-08-03 | 2021-10-26 | 万华化学集团电子材料有限公司 | 适用于硅片粗抛光的化学机械抛光组合物及其应用 |
CN113549399B (zh) * | 2021-08-03 | 2022-02-15 | 万华化学集团电子材料有限公司 | 适用于硅片粗抛光的化学机械抛光组合物及其应用 |
CN115160933A (zh) * | 2022-07-27 | 2022-10-11 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103080256B (zh) | 2015-06-24 |
RU2013115237A (ru) | 2014-10-20 |
IL224645A (en) | 2017-11-30 |
SG10201606566SA (en) | 2016-09-29 |
SG11201606187RA (en) | 2016-09-29 |
RU2573672C2 (ru) | 2016-01-27 |
EP2428541B1 (en) | 2019-03-06 |
US20130168348A1 (en) | 2013-07-04 |
TW201226491A (en) | 2012-07-01 |
WO2012032451A1 (en) | 2012-03-15 |
MY175638A (en) | 2020-07-03 |
JP5965906B2 (ja) | 2016-08-10 |
JP2013540849A (ja) | 2013-11-07 |
TWI525164B (zh) | 2016-03-11 |
KR20130102587A (ko) | 2013-09-17 |
KR101906135B1 (ko) | 2018-10-10 |
EP2428541A1 (en) | 2012-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103080256B (zh) | 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法 | |
TWI538970B (zh) | 化學機械研磨含有氧化矽介電質薄膜及多晶矽及/或氮化矽薄膜之基材的方法 | |
JP5022195B2 (ja) | 化学的機械的研磨用スラリー組成物及びその前駆体組成物 | |
CN103097476B (zh) | 化学机械抛光用于电子、机械和光学器件的衬底的含水抛光组合物和方法 | |
CN103189457B (zh) | 用于化学机械抛光电子、机械和光学器件用基底材料的含水抛光组合物和方法 | |
JP5459466B2 (ja) | 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板 | |
CN103210047A (zh) | 含n取代的二氮烯*二氧化物和/或n’-羟基-二氮烯*氧化物盐的含水抛光组合物 | |
JP6422325B2 (ja) | 半導体基板用研磨液組成物 | |
CN101946309A (zh) | 化学机械研磨用水系分散体以及化学机械研磨方法 | |
KR20080108598A (ko) | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트 | |
JP6819280B2 (ja) | 化学機械研磨用組成物および化学機械研磨方法 | |
WO2014089906A1 (zh) | 一种磷酸酯表面活性剂在自停止抛光中的应用 | |
JP3525824B2 (ja) | Cmp研磨液 | |
TWI814880B (zh) | 化學機械研磨用水系分散體 | |
JP2009147278A (ja) | 化学機械研磨用水系分散体、該分散体を調製するためのキット、および化学機械研磨用水系分散体の調製方法 | |
JP5344136B2 (ja) | 化学機械研磨用水系分散体、および該分散体の調製方法、ならびに半導体装置の化学機械研磨方法 | |
TWI796575B (zh) | 氧化矽膜用研磨液組合物 | |
JP2018053138A (ja) | 金属酸化物粒子分散液 | |
WO2023013059A1 (ja) | Cmp用研磨液、cmp用研磨液セット及び研磨方法 | |
WO2023085007A1 (ja) | 化学機械研磨用組成物および研磨方法 | |
JP2003064351A (ja) | Cmp研磨液 | |
JP5321796B2 (ja) | 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板 | |
JP2009065001A (ja) | 化学機械研磨用水系分散体、該分散体を調製するためのキット、および化学機械研磨用水系分散体の調製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150624 Termination date: 20190905 |
|
CF01 | Termination of patent right due to non-payment of annual fee |