SG10201606566SA - Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon filmsInfo
- Publication number
- SG10201606566SA SG10201606566SA SG10201606566SA SG10201606566SA SG10201606566SA SG 10201606566S A SG10201606566S A SG 10201606566SA SG 10201606566S A SG10201606566S A SG 10201606566SA SG 10201606566S A SG10201606566S A SG 10201606566SA SG 10201606566S A SG10201606566S A SG 10201606566SA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon oxide
- containing silicon
- oxide dielectric
- substrates containing
- polysilicon films
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38071910P | 2010-09-08 | 2010-09-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201606566SA true SG10201606566SA (en) | 2016-09-29 |
Family
ID=44773986
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606187RA SG11201606187RA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| SG10201606566SA SG10201606566SA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606187RA SG11201606187RA (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20130168348A1 (zh) |
| EP (1) | EP2428541B1 (zh) |
| JP (1) | JP5965906B2 (zh) |
| KR (1) | KR101906135B1 (zh) |
| CN (1) | CN103080256B (zh) |
| IL (1) | IL224645A (zh) |
| MY (1) | MY175638A (zh) |
| RU (1) | RU2573672C2 (zh) |
| SG (2) | SG11201606187RA (zh) |
| TW (1) | TWI525164B (zh) |
| WO (1) | WO2012032451A1 (zh) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9070632B2 (en) | 2010-10-07 | 2015-06-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| CN103249790A (zh) | 2010-12-10 | 2013-08-14 | 巴斯夫欧洲公司 | 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法 |
| CN103764775B (zh) | 2011-09-07 | 2016-05-18 | 巴斯夫欧洲公司 | 包含苷的化学机械抛光(cmp)组合物 |
| SG11201403505UA (en) * | 2011-12-21 | 2014-07-30 | Basf Se | Method for manufacturing cmp composition and application thereof |
| CN104178033A (zh) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | 纳米二氧化铈抛光液组合物 |
| US20150104940A1 (en) | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
| KR102283723B1 (ko) * | 2013-12-11 | 2021-07-30 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 표면 잔류물 제거용 세정 제형 |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9551075B2 (en) * | 2014-08-04 | 2017-01-24 | Sinmat, Inc. | Chemical mechanical polishing of alumina |
| EP4345142A3 (en) * | 2015-07-13 | 2024-05-29 | CMC Materials LLC | Methods and compositions for processing dielectric substrate |
| KR101628878B1 (ko) * | 2015-09-25 | 2016-06-16 | 영창케미칼 주식회사 | Cmp용 슬러리 조성물 및 이를 이용한 연마방법 |
| KR101693278B1 (ko) * | 2015-09-25 | 2017-01-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
| KR101871569B1 (ko) * | 2016-02-25 | 2018-08-02 | 삼성에스디아이 주식회사 | 이방 도전성 필름 및 이에 의해 접속된 디스플레이 장치 |
| KR101827366B1 (ko) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
| US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| KR102677797B1 (ko) * | 2016-12-22 | 2024-06-24 | 주식회사 케이씨텍 | Sti 공정용 연마 슬러리 조성물 |
| JP6761339B2 (ja) | 2016-12-28 | 2020-09-23 | 花王株式会社 | 酸化セリウム砥粒 |
| WO2018125905A1 (en) * | 2016-12-30 | 2018-07-05 | Fujifilm Planar Solutions, LLC | Polishing compositions |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| WO2018179061A1 (ja) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
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| WO2021046080A1 (en) * | 2019-09-04 | 2021-03-11 | Cabot Microelectronics Corporation | Composition and method for polysilicon cmp |
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| CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
| CN116000782B (zh) * | 2022-12-27 | 2023-09-19 | 昂士特科技(深圳)有限公司 | 用于金属合金cmp的化学机械抛光组合物 |
Family Cites Families (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2610705C3 (de) | 1976-03-13 | 1978-10-19 | Henkel Kgaa, 4000 Duesseldorf | Saure galvanische Kupferbäder |
| US5478882A (en) | 1987-09-21 | 1995-12-26 | The Geon Company | Articles from reinforced plasticized polyvinyl halide resin |
| US5057560A (en) | 1987-10-05 | 1991-10-15 | Ciba-Geigy Corporation | Thermotropic copolymer hydrogels from N,N-dimethylacrylamide and methoxy-ethyl (meth) acrylate |
| FR2694939B1 (fr) | 1992-08-20 | 1994-12-23 | Schlumberger Cie Dowell | Polymères thermoviscosifiants, leur synthèse et leurs applications notamment dans l'industrie pétrolière. |
| US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6110396A (en) | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| ES2216490T3 (es) | 1998-02-24 | 2004-10-16 | Showa Denko Kabushiki Kaisha | Composicion abrasiva para pulir un dispositivo semiconductor y procedimiento para producir un dispositivo semiconductor con la misma. |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US6299659B1 (en) | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
| JP2000109816A (ja) * | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ−の調製方法 |
| US6740590B1 (en) | 1999-03-18 | 2004-05-25 | Kabushiki Kaisha Toshiba | Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing |
| US6110832A (en) * | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
| US7425581B2 (en) | 1999-07-30 | 2008-09-16 | Universiteit Utrecht | Temperature sensitive polymers |
| US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
| DE10006538C2 (de) | 2000-02-15 | 2002-11-28 | Forsch Pigmente Und Lacke E V | Verfahren zur Beschichtung von Partikeln mit LCST-Polymeren |
| JP2001240850A (ja) | 2000-02-29 | 2001-09-04 | Sanyo Chem Ind Ltd | 研磨用砥粒分散剤および研磨用スラリー |
| KR100378180B1 (ko) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| TWI281493B (en) | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
| EP1197587B1 (en) | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
| US7037352B2 (en) * | 2000-12-12 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Polishing particle and method for producing polishing particle |
| FR2824832B1 (fr) | 2001-05-16 | 2005-05-27 | Oreal | Polymeres hydrosolubles a squelette hydrosoluble et a unites laterales a lcst, leur procede de preparation, compositions aqueuses les contenant, et leur utilisation dans le domaine cosmetique |
| DE10152993A1 (de) | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
| AU2003233400A1 (en) | 2002-03-15 | 2003-09-29 | The Penn State Research Foundation | Method for control of temperature-sensitivity of polymers in solution |
| JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
| US6616514B1 (en) | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
| US6645265B1 (en) | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
| GB2393447B (en) * | 2002-08-07 | 2006-04-19 | Kao Corp | Polishing composition |
| DE10243438A1 (de) | 2002-09-18 | 2004-03-25 | Merck Patent Gmbh | Oberflächenmodifizierte Effektpigmente |
| EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| DE10254430A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
| DE10254432A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
| TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
| JP4363890B2 (ja) * | 2003-04-30 | 2009-11-11 | 共栄社化学株式会社 | 水系研磨加工液 |
| KR100539983B1 (ko) | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Ｃｍｐ용 세리아 연마제 및 그 제조 방법 |
| AU2003297104A1 (en) | 2003-07-09 | 2005-02-25 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
| JP2007531631A (ja) * | 2003-07-11 | 2007-11-08 | ダブリュー・アール・グレイス・アンド・カンパニー−コネチカット | 化学機械的研磨用研磨剤粒子 |
| KR100574225B1 (ko) | 2003-10-10 | 2006-04-26 | 요업기술원 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
| DE10358092A1 (de) | 2003-12-10 | 2005-07-14 | Merck Patent Gmbh | Oberflächenmodifizierte Partikel |
| KR100640600B1 (ko) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
| JPWO2005110679A1 (ja) * | 2004-05-19 | 2008-03-21 | 日産化学工業株式会社 | 研磨用組成物 |
| JP4420391B2 (ja) | 2004-05-28 | 2010-02-24 | 三井金属鉱業株式会社 | セリウム系研摩材 |
| US7026441B2 (en) | 2004-08-12 | 2006-04-11 | Intel Corporation | Thermoresponsive sensor comprising a polymer solution |
| US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
| KR100985609B1 (ko) * | 2004-09-28 | 2010-10-05 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ연마제 |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| TW200632147A (zh) | 2004-11-12 | 2006-09-16 | ||
| KR100674927B1 (ko) | 2004-12-09 | 2007-01-26 | 삼성전자주식회사 | Ｃｍｐ용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법 |
| CN100375770C (zh) * | 2005-01-17 | 2008-03-19 | 上海大学 | 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法 |
| JP4131270B2 (ja) | 2005-03-01 | 2008-08-13 | トヨタ自動車株式会社 | 車輌の制駆動力制御装置 |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| US20060216935A1 (en) | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
| CN101155891B (zh) * | 2005-04-04 | 2012-07-04 | 昭和电工株式会社 | 氧化铈系研磨材料、其制造方法及用途 |
| FR2889194A1 (fr) | 2005-07-27 | 2007-02-02 | Rhodia Chimie Sa | Copolymere a blocs comprenant un bloc lcst presentant une temperature inferieur critique de solubilite, formulations comprenant le copolymere et utilisation pour vectoriser un ingredient actif |
| JP2009503910A (ja) | 2005-08-05 | 2009-01-29 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 金属フィルム平坦化用高スループット化学機械研磨組成物 |
| WO2007040118A1 (ja) | 2005-09-30 | 2007-04-12 | Toyama Prefecture | 感熱応答性高分子を用いた穴パタン付き膜を有するチップ及びその製造方法 |
| US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| WO2007055278A1 (ja) | 2005-11-11 | 2007-05-18 | Hitachi Chemical Co., Ltd. | 酸化ケイ素用研磨剤、添加液および研磨方法 |
| EP1994112B1 (en) | 2006-01-25 | 2018-09-19 | LG Chem, Ltd. | Cmp slurry and method for polishing semiconductor wafer using the same |
| JP4985409B2 (ja) * | 2006-01-31 | 2012-07-25 | 日立化成工業株式会社 | 絶縁膜研磨用ｃｍｐ研磨剤、研磨方法、該研磨方法で研磨された半導体電子部品 |
| US20070264827A1 (en) * | 2006-05-09 | 2007-11-15 | Promos Technologies Pte. Ltd. | Method for achieving uniform chemical mechanical polishing in integrated circuit manufacturing |
| KR100829594B1 (ko) | 2006-10-10 | 2008-05-14 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법 |
| US9120952B2 (en) | 2006-10-27 | 2015-09-01 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (CMP) processing |
| JP2008186898A (ja) * | 2007-01-29 | 2008-08-14 | Nissan Chem Ind Ltd | 研磨用組成物 |
| JP4367494B2 (ja) * | 2007-02-09 | 2009-11-18 | 住友電気工業株式会社 | ＧａＡｓウエハの化学機械研磨方法 |
| EP2437285A2 (en) * | 2007-03-26 | 2012-04-04 | JSR Corporation | Chemical mechanical polishing method for semiconductor device using an aqueous dispersion |
| KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
-
2011
- 2011-09-05 EP EP11179985.4A patent/EP2428541B1/en not_active Not-in-force
- 2011-09-05 JP JP2013527714A patent/JP5965906B2/ja not_active Expired - Fee Related
- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en active Application Filing
- 2011-09-05 SG SG11201606187RA patent/SG11201606187RA/en unknown
- 2011-09-05 US US13/821,746 patent/US20130168348A1/en not_active Abandoned
- 2011-09-05 MY MYPI2015002194A patent/MY175638A/en unknown
- 2011-09-05 RU RU2013115237/05A patent/RU2573672C2/ru not_active IP Right Cessation
- 2011-09-05 SG SG10201606566SA patent/SG10201606566SA/en unknown
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/ko active IP Right Grant
- 2011-09-05 CN CN201180041503.8A patent/CN103080256B/zh not_active Expired - Fee Related
- 2011-09-06 TW TW100132009A patent/TWI525164B/zh not_active IP Right Cessation
-
2013
- 2013-02-10 IL IL224645A patent/IL224645A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| MY175638A (en) | 2020-07-03 |
| IL224645A (en) | 2017-11-30 |
| TW201226491A (en) | 2012-07-01 |
| KR20130102587A (ko) | 2013-09-17 |
| EP2428541A1 (en) | 2012-03-14 |
| JP5965906B2 (ja) | 2016-08-10 |
| RU2573672C2 (ru) | 2016-01-27 |
| WO2012032451A1 (en) | 2012-03-15 |
| KR101906135B1 (ko) | 2018-10-10 |
| JP2013540849A (ja) | 2013-11-07 |
| TWI525164B (zh) | 2016-03-11 |
| CN103080256B (zh) | 2015-06-24 |
| CN103080256A (zh) | 2013-05-01 |
| SG11201606187RA (en) | 2016-09-29 |
| RU2013115237A (ru) | 2014-10-20 |
| US20130168348A1 (en) | 2013-07-04 |
| EP2428541B1 (en) | 2019-03-06 |
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