JP6035346B2 - 半導体装置の製造方法及びcmp組成物の使用方法 - Google Patents
半導体装置の製造方法及びcmp組成物の使用方法 Download PDFInfo
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- JP6035346B2 JP6035346B2 JP2014548215A JP2014548215A JP6035346B2 JP 6035346 B2 JP6035346 B2 JP 6035346B2 JP 2014548215 A JP2014548215 A JP 2014548215A JP 2014548215 A JP2014548215 A JP 2014548215A JP 6035346 B2 JP6035346 B2 JP 6035346B2
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- 239000000203 mixture Substances 0.000 title claims description 109
- 238000000034 method Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000002245 particle Substances 0.000 claims description 74
- 238000005498 polishing Methods 0.000 claims description 52
- 239000000126 substance Substances 0.000 claims description 22
- 229920001577 copolymer Polymers 0.000 claims description 21
- 229910019142 PO4 Inorganic materials 0.000 claims description 20
- 235000021317 phosphate Nutrition 0.000 claims description 20
- 239000004094 surface-active agent Substances 0.000 claims description 20
- 239000012736 aqueous medium Substances 0.000 claims description 19
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 18
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 16
- 239000010452 phosphate Substances 0.000 claims description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 15
- 239000002270 dispersing agent Substances 0.000 claims description 15
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 15
- 239000000178 monomer Substances 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 13
- 238000005227 gel permeation chromatography Methods 0.000 claims description 13
- 239000010954 inorganic particle Substances 0.000 claims description 12
- 125000000129 anionic group Chemical group 0.000 claims description 11
- 239000011146 organic particle Substances 0.000 claims description 11
- 239000012313 reversal agent Substances 0.000 claims description 11
- 229920002554 vinyl polymer Polymers 0.000 claims description 10
- 229920003169 water-soluble polymer Polymers 0.000 claims description 10
- 125000002947 alkylene group Chemical group 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 7
- 229920001519 homopolymer Polymers 0.000 claims description 7
- 239000005368 silicate glass Substances 0.000 claims description 7
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 6
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002296 dynamic light scattering Methods 0.000 claims description 6
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 239000011734 sodium Chemical group 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229920001400 block copolymer Polymers 0.000 claims description 4
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 4
- 229920000388 Polyphosphate Polymers 0.000 claims description 3
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000001205 polyphosphate Substances 0.000 claims description 3
- 235000011176 polyphosphates Nutrition 0.000 claims description 3
- 125000005341 metaphosphate group Chemical group 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 238000009826 distribution Methods 0.000 description 12
- -1 aminosilane compound Chemical class 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 241001460678 Napo <wasp> Species 0.000 description 9
- 229920002359 Tetronic® Polymers 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 239000003002 pH adjusting agent Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 7
- 229940005740 hexametaphosphate Drugs 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229940117927 ethylene oxide Drugs 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000003115 biocidal effect Effects 0.000 description 4
- 239000003139 biocide Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 229920001983 poloxamer Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical class [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000002902 bimodal effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 125000003827 glycol group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical class [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- FYLKJKIAQCRLPZ-UHFFFAOYSA-N NN=O.NN=O Chemical compound NN=O.NN=O FYLKJKIAQCRLPZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- MWIPBPIJVVSXNR-UHFFFAOYSA-N ON=[NH]=O Chemical class ON=[NH]=O MWIPBPIJVVSXNR-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010556 emulsion polymerization method Methods 0.000 description 1
- JOUOJMIHRPQLAA-UHFFFAOYSA-N ethenylphosphonic acid;prop-2-enoic acid Chemical compound OC(=O)C=C.OP(O)(=O)C=C JOUOJMIHRPQLAA-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- VGPXMTPKYDNMQA-UHFFFAOYSA-N furan-2,5-dione;prop-2-enamide Chemical compound NC(=O)C=C.O=C1OC(=O)C=C1 VGPXMTPKYDNMQA-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000005324 oxide salts Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229920006301 statistical copolymer Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000010558 suspension polymerization method Methods 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
(B)少なくとも1種類の、分散剤又は電荷反転剤(charge reversal agent)としてのアニオン性リン酸塩(アニオニックホスフェート;anionic phosphate)又はホスホン酸塩(ホスホネート;phosphonate)と、
(C)少なくとも1種類の界面活性剤と、
(D)水性媒体と、
を含むCMP組成物の存在下で、
ボロンリンシリケートガラス(BPSG)材料を化学−機械研磨する、半導体装置の製造方法が発見された。このCMP組成物は、以下、(Q)又はCMP組成物(Q)と称する。
・無機粒子の1種の、
・異なる種類の無機粒子の混合物又は複合物、
・有機粒子の1種の、
・異なる種類の有機粒子の混合物又は複合物、又は、
・1種以上の無機粒子及び1種以上の有機粒子の混合物又は複合物と、することができる。
・金属酸化物又は炭化物のような無機粒子(メタロイド、メタロイド酸化物又は窒化物を含む)、
・ポリマー粒子のような有機粒子、又は、
・無機及び有機粒子の複合物又は混合物と、することができる。
[M+ n(PO3)n] (I)
及び、一般式(II)、(III)のポリリン酸塩であって、
M+ nPnO3n+1 (II)
M+H2PnO3n+1 (III)
Mはアンモニウム、ナトリウム及び/又はカリウムであり、数nは2以上10,000以下である。式(I)、(II)又は(III)のポリリン酸塩に関し、数nは、好ましくは、2以上2,000以下、より好ましくは2以上300以下、最も好ましくは2以上50以下、特に2以上15以下、例えば3以上8以下である。
(B)分散剤また電荷反転剤である、グラハム塩(NaPO3)40−50、カルゴン(NaPO3)15−20、nが約5000のクロール塩(NaPO3)n、及びヘキサメタリン酸アンモニウム、ヘキサメタリン酸ナトリウム、及びヘキサメタリン酸カリウムからなる群より選択される水溶性縮合リン酸塩、
(C)少なくとも1種類の界面活性剤、及び、
(D)水性媒体。
(B)少なくとも1種類の、分散剤又は電荷反転剤としてのアニオン性リン酸塩又はホスホン酸塩、
(C)直鎖又は分岐アルキレンオキシド単独重合体又は共重合体である、水溶性ポリマー界面活性剤、及び
(D)水性媒体。
(B)分散剤又は電荷反転剤としての、水溶性縮合リン酸塩、
(C)エチレンジアミンのエチレン−オキシド/プロピレン−オキシド共重合体である水溶性ポリマー界面活性剤、及び、
(D)水性媒体。
(B)CMP組成物中の量が2〜150質量ppmである、分散剤又は電荷反転剤としての水溶性縮合リン酸塩、
(C)CMP組成物中の量が50〜5000質量ppmの、直鎖又は分岐のアルキレンオキシド単独重合体又は共重合体である水溶性ポリマー界面活性剤、及び、
(D)水性媒体。
(B)分散剤また電荷反転剤である、グラハム塩(NaPO3)40−50、カルゴン(NaPO3)15−20、nが約5000のクロール塩(NaPO3)n、及びヘキサメタリン酸アンモニウム、ヘキサメタリン酸ナトリウム、及びヘキサメタリン酸カリウムからなる群より選択され、CMP組成物中の量が2〜150質量ppmである水溶性縮合リン酸塩、
(C)CMP組成物中の量が50〜5000質量ppmの、直鎖又は分岐のアルキレンオキシド単独重合体又は共重合体である水溶性ポリマー界面活性剤、及び、
(D)水性媒体。
pH電極を用いてpH値を測定した(スコット、ブルーライン、PH0−14/−5 100℃/3mol/L、塩化ナトリウム)。
粒子(A)として使用するセリア粒子は、平均粒子径が100nm以上200nmのコロイダルタイプのものである。平均粒子径は、マルバーンインスツールメンツ社の高パフォーマンス粒子径測定器(HPPS)又はHoriba LB550のような機器を使用し、動的光散乱により測定した。これらセリア粒子は、下記ではセリア粒子(A1)とする。
CMP方法:
研磨機器:AMAT Mirr(200mmウェハを研磨可能)
研磨基板:ボロンリンシリケートガラス(BPSG)シリコン酸化物、テトラエトキシシラン(TEOS)シリコン酸化物、LPCVDシリコン窒化物及び非晶質ポリシリコンを含む多層基板
この基板を、以下、基板(S1)とする。
流量:160ml/分
研磨パッド:IC1010−k グローブパッド コンディショナー:3M A166;インサイチュコンディショニング 5lbs
盤rpm:93rpm
キャリアrpm:87rpm
ダウンフォース:2.0、2.5及び3.0 psi
研磨時間:60秒
研磨する基板の膜厚を、CMの前と後で、Thermawave Optiprobe 2600を用いて測定した。これにより、材料除去速度が得られた。
水性研磨組成物Q1〜Q7を作製するために、セリア粒子(A1)、ヘキサメタリン酸ナトリウム(セリアのヘキサメタリン酸ナトリウムに対する質量比が200:1)を、超純水に分散又は溶解させた。ヘキサメタリン酸ナトリウムは分散剤として使用した。上記混合物に、界面活性剤を、1質量%保存溶液(stock solution)と共に添加した。
実施例Q1〜Q7のCMP組成物と、そのpH特性を下記表1に示す。ここで、CMP組成物の水性媒体(D)は脱イオン化水である。成分(A)、(B)、(C)の量は、対応するCMP組成物の百万分の一(ppm)又は質量パーセント(質量%)で特定した。(D)以外の成分の量が、全体でCMP組成物のy質量%である場合、(D)の量は、CMP組成物の(100−y)質量%である。
表2に、CMP組成物Q1〜Q7を用いた基板(S1)の化学−機械研磨処理におけるBPSG/TEOS選択性データを示す。実施例5、6及び8〜15では、1よりも低いBPSG/TEOS選択性が得られた。
Claims (13)
- 化学機械研磨(CMP)組成物の存在下で、ボロンリンシリケートガラス(BPSG)層及びテトラエチルオルトケイ酸塩(TEOS)層を化学機械研磨する工程を含む半導体装置の製造方法であって、
前記CMP組成物が、
(A)無機粒子、有機粒子又はそれらの混合物若しくは複合体と、
(B)少なくとも1種類の、分散剤又は電荷反転剤であるアニオン性リン酸塩又はホスホン酸塩と、
(C)少なくとも1種類の界面活性剤と、
(D)水性媒体と、
を含み、
BPSGのTEOSに対する選択性が0.5:1〜1:1であることを特徴とする半導体装置の製造方法。 - 前記粒子(A)は無機粒子である請求項1に記載の半導体装置の製造方法。
- 前記粒子(A)はセリア粒子である請求項2に記載の半導体装置の製造方法。
- 前記粒子(A)の動的光散乱により測定される平均粒子径が、50nm以上250nm以下である請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記アニオン性リン酸塩又はホスホン酸塩は、水溶性縮合リン酸塩からなる群より選択される請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記水溶性縮合リン酸塩(B)は、一般式(I)のメタリン酸塩:
[M+ n(PO3)n] (I)
と、一般式(II)、(III)のポリリン酸塩:
M+ nPnO3n+1 (II)、
M+H2PnO3n+1 (III)
と、からなる群より選択され、Mはアンモニウム、ナトリウム及び/又はカリウムであり、nは2以上10,000以下である請求項5に記載の半導体装置の製造方法。 - 前記アニオン性リン酸塩又はホスホン酸塩(B)は、ポリビニルホスホネート、及び/又は、モノマー単位としてビニルホスホン酸及び他のモノマーを含む共重合体の脱プロトン化体である請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記アニオン性リン酸塩又はホスホン酸塩(B)は、ゲル浸透クロマトグラフィーにより測定される重量平均分子量が1,000ダルトン以上70,000ダルトン以下のポリビニルホスホネートである請求項7に記載の半導体装置の製造方法。
- 前記界面活性剤(C)は、水溶性ポリマー界面活性剤である請求項1〜8のいずれか1項に記載の半導体装置の製造方法。
- 前記水溶性ポリマー界面活性剤(C)は、直鎖又は分岐アルキレンオキシド単独重合体又は共重合体である請求項9に記載の半導体装置の製造方法。
- 前記直鎖又は分岐アルキレンオキシド単独重合体又は共重合体(C)は、エチレンオキシド及びプロピレンオキシドモノマー単位を含むブロック共重合体である請求項9に記載の半導体装置の製造方法。
- 前記CMP組成物のpH値は、4以上10以下である請求項1〜11のいずれか1項に記載の半導体装置の製造方法。
- 前記CMP組成物が、
(A)動的光散乱により測定される平均粒子径が50nm以上250nm以下のセリア粒子であって、その量が前記CMP組成物の0.05質量%以上1.5質量%以下であるセリア粒子と、
(B)分散剤又は電荷反転剤としての水溶性縮合リン酸塩であって、その量が前記CMP組成物の2質量ppm以上150質量ppm以下である水溶性縮合リン酸塩と、
(C)直鎖又は分岐アルキレンオキシド単独重合体又は共重合体である水溶性ポリマー界面活性剤であって、その量が前記CMP組成物の50質量ppm以上5000質量ppm以下である水溶性ポリマー界面活性剤と、
(D)水性媒体と、
を含有する請求項1に記載の半導体装置の製造方法。
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