MY175638A - Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectic and polysilicon films. - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectic and polysilicon films.Info
- Publication number
- MY175638A MY175638A MYPI2015002194A MYPI2015002194A MY175638A MY 175638 A MY175638 A MY 175638A MY PI2015002194 A MYPI2015002194 A MY PI2015002194A MY PI2015002194 A MYPI2015002194 A MY PI2015002194A MY 175638 A MY175638 A MY 175638A
- Authority
- MY
- Malaysia
- Prior art keywords
- polishing composition
- aqueous
- dielectic
- silicon oxide
- containing silicon
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- 125000002947 alkylene group Chemical group 0.000 abstract 1
- 125000000129 anionic group Chemical group 0.000 abstract 1
- 239000012736 aqueous medium Substances 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 239000002270 dispersing agent Substances 0.000 abstract 1
- 229920001519 homopolymer Polymers 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- 229920003169 water-soluble polymer Polymers 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38071910P | 2010-09-08 | 2010-09-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY175638A true MY175638A (en) | 2020-07-03 |
Family
ID=44773986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2015002194A MY175638A (en) | 2010-09-08 | 2011-09-05 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectic and polysilicon films. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20130168348A1 (enExample) |
| EP (1) | EP2428541B1 (enExample) |
| JP (1) | JP5965906B2 (enExample) |
| KR (1) | KR101906135B1 (enExample) |
| CN (1) | CN103080256B (enExample) |
| IL (1) | IL224645A (enExample) |
| MY (1) | MY175638A (enExample) |
| RU (1) | RU2573672C2 (enExample) |
| SG (2) | SG11201606187RA (enExample) |
| TW (1) | TWI525164B (enExample) |
| WO (1) | WO2012032451A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2625236B1 (en) | 2010-10-07 | 2017-12-13 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| SG190334A1 (en) | 2010-12-10 | 2013-06-28 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| JP6125507B2 (ja) | 2011-09-07 | 2017-05-10 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | グリコシドを含む化学機械研磨（ｃｍｐ）組成物 |
| SG11201403505UA (en) * | 2011-12-21 | 2014-07-30 | Basf Se | Method for manufacturing cmp composition and application thereof |
| CN104178033A (zh) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | 纳米二氧化铈抛光液组合物 |
| US20150104940A1 (en) | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
| EP3080240B1 (en) * | 2013-12-11 | 2024-10-16 | FujiFilm Electronic Materials USA, Inc. | Cleaning formulation for removing residues on surfaces |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9551075B2 (en) | 2014-08-04 | 2017-01-24 | Sinmat, Inc. | Chemical mechanical polishing of alumina |
| EP3323142B1 (en) * | 2015-07-13 | 2024-08-28 | CMC Materials LLC | Methods and compositions for processing dielectric substrate |
| KR101693278B1 (ko) * | 2015-09-25 | 2017-01-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
| KR101628878B1 (ko) * | 2015-09-25 | 2016-06-16 | 영창케미칼 주식회사 | Cmp용 슬러리 조성물 및 이를 이용한 연마방법 |
| KR101871569B1 (ko) * | 2016-02-25 | 2018-08-02 | 삼성에스디아이 주식회사 | 이방 도전성 필름 및 이에 의해 접속된 디스플레이 장치 |
| KR101827366B1 (ko) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
| US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| KR102677797B1 (ko) * | 2016-12-22 | 2024-06-24 | 주식회사 케이씨텍 | Sti 공정용 연마 슬러리 조성물 |
| JP6761339B2 (ja) | 2016-12-28 | 2020-09-23 | 花王株式会社 | 酸化セリウム砥粒 |
| EP3562900A4 (en) * | 2016-12-30 | 2020-09-02 | Fujifilm Electronic Materials U.S.A., Inc. | POLISHING COMPOSITIONS |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| WO2018179061A1 (ja) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| CN108587478B (zh) * | 2018-07-03 | 2020-09-25 | 中国人民解放军国防科技大学 | 一种改性纳米二氧化硅复合抛光液及其应用 |
| KR102296085B1 (ko) | 2019-07-01 | 2021-09-01 | 남기호 | 스마트 트램폴린 및 스마트 트램폴린을 이용한 건강관리 시스템 |
| KR20220057561A (ko) * | 2019-09-04 | 2022-05-09 | 씨엠씨 머티리얼즈, 인코포레이티드 | 폴리실리콘 cmp용 조성물 및 방법 |
| TWI767355B (zh) * | 2019-10-24 | 2022-06-11 | 美商慧盛材料美國責任有限公司 | 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法 |
| JP2022061016A (ja) * | 2020-10-05 | 2022-04-15 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| JP7777017B2 (ja) * | 2021-03-30 | 2025-11-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物、及び窒化ケイ素を選択的に除去する方法 |
| CN113549399B (zh) * | 2021-08-03 | 2022-02-15 | 万华化学集团电子材料有限公司 | 适用于硅片粗抛光的化学机械抛光组合物及其应用 |
| KR102773634B1 (ko) | 2022-04-13 | 2025-02-25 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법 |
| CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
| CN116000782B (zh) * | 2022-12-27 | 2023-09-19 | 昂士特科技(深圳)有限公司 | 用于金属合金cmp的化学机械抛光组合物 |
Family Cites Families (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2610705C3 (de) | 1976-03-13 | 1978-10-19 | Henkel Kgaa, 4000 Duesseldorf | Saure galvanische Kupferbäder |
| US5478882A (en) | 1987-09-21 | 1995-12-26 | The Geon Company | Articles from reinforced plasticized polyvinyl halide resin |
| US5057560A (en) | 1987-10-05 | 1991-10-15 | Ciba-Geigy Corporation | Thermotropic copolymer hydrogels from N,N-dimethylacrylamide and methoxy-ethyl (meth) acrylate |
| FR2694939B1 (fr) | 1992-08-20 | 1994-12-23 | Schlumberger Cie Dowell | Polymères thermoviscosifiants, leur synthèse et leurs applications notamment dans l'industrie pétrolière. |
| US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6110396A (en) | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| DE69917010T2 (de) | 1998-02-24 | 2005-04-07 | Showa Denko K.K. | Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US6299659B1 (en) | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
| JP2000109816A (ja) * | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ−の調製方法 |
| EP1036836B1 (en) | 1999-03-18 | 2004-11-03 | Kabushiki Kaisha Toshiba | Aqueous dispersion for chemical mechanical polishing |
| US6110832A (en) * | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
| US7425581B2 (en) | 1999-07-30 | 2008-09-16 | Universiteit Utrecht | Temperature sensitive polymers |
| US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
| DE10006538C2 (de) | 2000-02-15 | 2002-11-28 | Forsch Pigmente Und Lacke E V | Verfahren zur Beschichtung von Partikeln mit LCST-Polymeren |
| JP2001240850A (ja) | 2000-02-29 | 2001-09-04 | Sanyo Chem Ind Ltd | 研磨用砥粒分散剤および研磨用スラリー |
| KR100378180B1 (ko) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| TWI281493B (en) | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
| US6682642B2 (en) | 2000-10-13 | 2004-01-27 | Shipley Company, L.L.C. | Seed repair and electroplating bath |
| US7037352B2 (en) * | 2000-12-12 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Polishing particle and method for producing polishing particle |
| FR2824832B1 (fr) | 2001-05-16 | 2005-05-27 | Oreal | Polymeres hydrosolubles a squelette hydrosoluble et a unites laterales a lcst, leur procede de preparation, compositions aqueuses les contenant, et leur utilisation dans le domaine cosmetique |
| DE10152993A1 (de) | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
| US7011930B2 (en) | 2002-03-15 | 2006-03-14 | The Penn State Research Foundation | Method for control of temperature-sensitivity of polymers in solution |
| JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
| US6616514B1 (en) | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
| US6645265B1 (en) | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
| GB2393447B (en) * | 2002-08-07 | 2006-04-19 | Kao Corp | Polishing composition |
| DE10243438A1 (de) | 2002-09-18 | 2004-03-25 | Merck Patent Gmbh | Oberflächenmodifizierte Effektpigmente |
| EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| DE10254430A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
| DE10254432A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
| WO2004094581A1 (en) | 2003-04-18 | 2004-11-04 | Ekc Technology, Inc. | Aqueous fluoride compositions for cleaning semiconductor devices |
| JP4363890B2 (ja) * | 2003-04-30 | 2009-11-11 | 共栄社化学株式会社 | 水系研磨加工液 |
| KR100539983B1 (ko) | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Ｃｍｐ용 세리아 연마제 및 그 제조 방법 |
| US7037351B2 (en) | 2003-07-09 | 2006-05-02 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
| CN1849379B (zh) * | 2003-07-11 | 2011-12-14 | 格雷斯公司 | 用于化学机械抛光的磨料颗粒 |
| KR100574225B1 (ko) | 2003-10-10 | 2006-04-26 | 요업기술원 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
| DE10358092A1 (de) | 2003-12-10 | 2005-07-14 | Merck Patent Gmbh | Oberflächenmodifizierte Partikel |
| KR100640600B1 (ko) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
| US20070240366A1 (en) * | 2004-05-19 | 2007-10-18 | Nissan Chemical Industries, Ltd | Composition for Polishing |
| JP4420391B2 (ja) | 2004-05-28 | 2010-02-24 | 三井金属鉱業株式会社 | セリウム系研摩材 |
| US7026441B2 (en) | 2004-08-12 | 2006-04-11 | Intel Corporation | Thermoresponsive sensor comprising a polymer solution |
| US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
| JP4755984B2 (ja) * | 2004-09-28 | 2011-08-24 | 日立化成工業株式会社 | Ｃｍｐ研磨剤及び基板の研磨方法 |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | Enthone | 微電子裝置上的銅電沈積 |
| KR100674927B1 (ko) | 2004-12-09 | 2007-01-26 | 삼성전자주식회사 | Ｃｍｐ용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법 |
| CN100375770C (zh) * | 2005-01-17 | 2008-03-19 | 上海大学 | 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法 |
| JP4131270B2 (ja) | 2005-03-01 | 2008-08-13 | トヨタ自動車株式会社 | 車輌の制駆動力制御装置 |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| US20060216935A1 (en) | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
| US7722692B2 (en) * | 2005-04-04 | 2010-05-25 | Show A Denko K.K. | Cerium oxide-based abrasive, and production method and use thereof |
| FR2889194A1 (fr) | 2005-07-27 | 2007-02-02 | Rhodia Chimie Sa | Copolymere a blocs comprenant un bloc lcst presentant une temperature inferieur critique de solubilite, formulations comprenant le copolymere et utilisation pour vectoriser un ingredient actif |
| WO2007019342A2 (en) | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| KR101325856B1 (ko) | 2005-09-30 | 2013-11-05 | 닛산 가가쿠 고교 가부시키 가이샤 | 감열 응답성 고분자를 이용한 구멍 패턴 첨부막을 가지는칩 및 그 제조 방법 |
| US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| CN102965025B (zh) | 2005-11-11 | 2014-10-29 | 日立化成株式会社 | 氧化硅用研磨剂、其用途以及研磨方法 |
| CN101374922B (zh) | 2006-01-25 | 2013-06-12 | Lg化学株式会社 | 用于抛光半导体晶片的cmp浆料及使用该浆料的方法 |
| US8524111B2 (en) * | 2006-01-31 | 2013-09-03 | Hitachi Chemical Company, Ltd. | CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method |
| US20070264827A1 (en) * | 2006-05-09 | 2007-11-15 | Promos Technologies Pte. Ltd. | Method for achieving uniform chemical mechanical polishing in integrated circuit manufacturing |
| KR100829594B1 (ko) | 2006-10-10 | 2008-05-14 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법 |
| US9120952B2 (en) | 2006-10-27 | 2015-09-01 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (CMP) processing |
| JP2008186898A (ja) * | 2007-01-29 | 2008-08-14 | Nissan Chem Ind Ltd | 研磨用組成物 |
| JP4367494B2 (ja) * | 2007-02-09 | 2009-11-18 | 住友電気工業株式会社 | ＧａＡｓウエハの化学機械研磨方法 |
| EP2131389A4 (en) * | 2007-03-26 | 2011-06-22 | Jsr Corp | Aqueous dispersion for chemical-mechanical polishing and method for chemical-mechanical polishing for a semiconductor assembly |
| KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
-
2011
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/ko not_active Expired - Fee Related
- 2011-09-05 CN CN201180041503.8A patent/CN103080256B/zh not_active Expired - Fee Related
- 2011-09-05 RU RU2013115237/05A patent/RU2573672C2/ru not_active IP Right Cessation
- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en not_active Ceased
- 2011-09-05 SG SG11201606187RA patent/SG11201606187RA/en unknown
- 2011-09-05 MY MYPI2015002194A patent/MY175638A/en unknown
- 2011-09-05 EP EP11179985.4A patent/EP2428541B1/en not_active Not-in-force
- 2011-09-05 SG SG10201606566SA patent/SG10201606566SA/en unknown
- 2011-09-05 US US13/821,746 patent/US20130168348A1/en not_active Abandoned
- 2011-09-05 JP JP2013527714A patent/JP5965906B2/ja not_active Expired - Fee Related
- 2011-09-06 TW TW100132009A patent/TWI525164B/zh not_active IP Right Cessation
-
2013
- 2013-02-10 IL IL224645A patent/IL224645A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20130168348A1 (en) | 2013-07-04 |
| TWI525164B (zh) | 2016-03-11 |
| KR101906135B1 (ko) | 2018-10-10 |
| RU2013115237A (ru) | 2014-10-20 |
| RU2573672C2 (ru) | 2016-01-27 |
| JP2013540849A (ja) | 2013-11-07 |
| EP2428541A1 (en) | 2012-03-14 |
| SG11201606187RA (en) | 2016-09-29 |
| EP2428541B1 (en) | 2019-03-06 |
| TW201226491A (en) | 2012-07-01 |
| KR20130102587A (ko) | 2013-09-17 |
| CN103080256B (zh) | 2015-06-24 |
| WO2012032451A1 (en) | 2012-03-15 |
| JP5965906B2 (ja) | 2016-08-10 |
| CN103080256A (zh) | 2013-05-01 |
| IL224645A (en) | 2017-11-30 |
| SG10201606566SA (en) | 2016-09-29 |
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