WO2011049318A3 - Cmp용 슬러리 조성물 및 연마방법 - Google Patents

Cmp용 슬러리 조성물 및 연마방법 Download PDF

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Publication number
WO2011049318A3
WO2011049318A3 PCT/KR2010/007006 KR2010007006W WO2011049318A3 WO 2011049318 A3 WO2011049318 A3 WO 2011049318A3 KR 2010007006 W KR2010007006 W KR 2010007006W WO 2011049318 A3 WO2011049318 A3 WO 2011049318A3
Authority
WO
WIPO (PCT)
Prior art keywords
cmp
slurry composition
polyethylene glycol
polishing method
polymer additive
Prior art date
Application number
PCT/KR2010/007006
Other languages
English (en)
French (fr)
Other versions
WO2011049318A2 (ko
Inventor
신동목
최은미
조승범
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to EP10825143.0A priority Critical patent/EP2489714B1/en
Priority to US13/502,062 priority patent/US8822339B2/en
Priority to JP2012534111A priority patent/JP5568641B2/ja
Priority to CN201080056417.XA priority patent/CN102648265B/zh
Publication of WO2011049318A2 publication Critical patent/WO2011049318A2/ko
Publication of WO2011049318A3 publication Critical patent/WO2011049318A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

본 발명은 연마입자; 분산제; 이온성 고분자 첨가제; 및 2 이상의 폴리에틸렌글리콜 반복단위를 포함하고, 적어도 하나의 폴리에틸렌글리콜 반복단위가 분지형으로 이루어진 폴리올레핀-폴리에틸렌글리콜 공중합체를 함유한 비이온성 고분자 첨가제를 포함하는 CMP 용 슬러리 조성물 및 이 이용한 연마 방법에 관한 것이다. 상기 CMP 용 슬러리 조성물은 단결정 실리콘막 또는 폴리실리콘막에 대한 연마율이 낮고 실리콘 산화막에 대한 연마율이 높아 우수한 연마 선택비를 나타낸다.
PCT/KR2010/007006 2009-10-13 2010-10-13 Cmp용 슬러리 조성물 및 연마방법 WO2011049318A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP10825143.0A EP2489714B1 (en) 2009-10-13 2010-10-13 Slurry composition for cmp, and polishing method
US13/502,062 US8822339B2 (en) 2009-10-13 2010-10-13 Slurry composition for CMP, and polishing method
JP2012534111A JP5568641B2 (ja) 2009-10-13 2010-10-13 Ｃｍｐ用スラリー組成物及び研磨方法
CN201080056417.XA CN102648265B (zh) 2009-10-13 2010-10-13 Cmp浆料组合物及抛光方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090097048 2009-10-13
KR10-2009-0097048 2009-10-13

Publications (2)

Publication Number Publication Date
WO2011049318A2 WO2011049318A2 (ko) 2011-04-28
WO2011049318A3 true WO2011049318A3 (ko) 2011-09-01

Family

ID=43900784

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007006 WO2011049318A2 (ko) 2009-10-13 2010-10-13 Cmp용 슬러리 조성물 및 연마방법

Country Status (7)

Country Link
US (1) US8822339B2 (ko)
EP (1) EP2489714B1 (ko)
JP (1) JP5568641B2 (ko)
KR (1) KR101178236B1 (ko)
CN (1) CN102648265B (ko)
TW (1) TWI431080B (ko)
WO (1) WO2011049318A2 (ko)

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TWI713611B (zh) * 2015-10-23 2020-12-21 日商霓塔杜邦股份有限公司 研磨用組合物
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WO2018142516A1 (ja) * 2017-02-01 2018-08-09 日立化成株式会社 研磨液、研磨液セット及び研磨方法
CN107353833B (zh) * 2017-07-24 2020-05-12 包头天骄清美稀土抛光粉有限公司 高选择性浅槽隔离化学机械抛光浆料的制备工艺
KR102210251B1 (ko) * 2017-11-10 2021-02-01 삼성에스디아이 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR20230110824A (ko) * 2018-03-23 2023-07-25 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
CN108838745B (zh) * 2018-06-27 2019-08-13 大连理工大学 一种钇铝石榴石晶体的高效化学机械抛光方法
KR102279324B1 (ko) * 2018-12-21 2021-07-21 주식회사 케이씨텍 연마 슬러리 조성물
ES2952507T3 (es) * 2019-02-26 2023-10-31 Byk Chemie Gmbh Composición que comprende un copolímero tipo peine
JP7267893B2 (ja) * 2019-03-27 2023-05-02 株式会社フジミインコーポレーテッド 研磨用組成物
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Also Published As

Publication number Publication date
US20120270399A1 (en) 2012-10-25
TW201127923A (en) 2011-08-16
TWI431080B (zh) 2014-03-21
EP2489714A2 (en) 2012-08-22
JP5568641B2 (ja) 2014-08-06
US8822339B2 (en) 2014-09-02
EP2489714B1 (en) 2015-08-12
WO2011049318A2 (ko) 2011-04-28
EP2489714A4 (en) 2014-08-13
CN102648265A (zh) 2012-08-22
CN102648265B (zh) 2014-12-10
JP2013507786A (ja) 2013-03-04
KR101178236B1 (ko) 2012-08-29
KR20110040721A (ko) 2011-04-20

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