WO2008105342A1 - 金属用研磨液及び研磨方法 - Google Patents
金属用研磨液及び研磨方法 Download PDFInfo
- Publication number
- WO2008105342A1 WO2008105342A1 PCT/JP2008/053065 JP2008053065W WO2008105342A1 WO 2008105342 A1 WO2008105342 A1 WO 2008105342A1 JP 2008053065 W JP2008053065 W JP 2008053065W WO 2008105342 A1 WO2008105342 A1 WO 2008105342A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- metal
- polishing liquid
- disclosed
- abrasive grains
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 8
- 239000007788 liquid Substances 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000006061 abrasive grain Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000011163 secondary particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097016963A KR101418626B1 (ko) | 2007-02-27 | 2008-02-22 | 금속용 연마액 및 연마방법 |
JP2009501221A JP5381701B2 (ja) | 2007-02-27 | 2008-02-22 | 金属用研磨液及び研磨方法 |
CN200880005185.8A CN101611476B (zh) | 2007-02-27 | 2008-02-22 | 金属用研磨液以及研磨方法 |
US12/527,607 US8821750B2 (en) | 2007-02-27 | 2008-02-22 | Metal polishing slurry and polishing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-047007 | 2007-02-27 | ||
JP2007047007 | 2007-02-27 | ||
JP2007-125840 | 2007-05-10 | ||
JP2007125840 | 2007-05-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008105342A1 true WO2008105342A1 (ja) | 2008-09-04 |
Family
ID=39721177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053065 WO2008105342A1 (ja) | 2007-02-27 | 2008-02-22 | 金属用研磨液及び研磨方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8821750B2 (ja) |
JP (2) | JP5381701B2 (ja) |
KR (1) | KR101418626B1 (ja) |
CN (2) | CN102690607B (ja) |
TW (1) | TWI410469B (ja) |
WO (1) | WO2008105342A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231486A (ja) * | 2008-03-21 | 2009-10-08 | Kao Corp | シリコンウエハ用研磨液組成物 |
JP2010080499A (ja) * | 2008-09-24 | 2010-04-08 | Fujifilm Corp | 研磨液 |
JP2010114402A (ja) * | 2008-10-07 | 2010-05-20 | Hitachi Chem Co Ltd | Cmp用研磨液及びこのcmp用研磨液を用いた研磨方法 |
JP2012512757A (ja) * | 2008-12-20 | 2012-06-07 | キャボット マイクロエレクトロニクス コーポレイション | ワイヤーソー切断の間の乾燥性を向上させるための組成物 |
CN102786879A (zh) * | 2012-07-17 | 2012-11-21 | 清华大学 | 钛酸钡化学机械抛光水性组合物及其应用 |
WO2013069623A1 (ja) * | 2011-11-08 | 2013-05-16 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2014061417A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Cmp用研磨液、貯蔵液及び研磨方法 |
CN104119802A (zh) * | 2014-08-06 | 2014-10-29 | 江苏天恒纳米科技股份有限公司 | 一种蓝宝石材料表面超精密加工专用纳米浆料 |
WO2017002705A1 (ja) * | 2015-06-30 | 2017-01-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2017155242A (ja) * | 2013-04-02 | 2017-09-07 | 信越化学工業株式会社 | コロイダルシリカ研磨材 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103333661B (zh) | 2008-12-11 | 2015-08-19 | 日立化成株式会社 | Cmp用研磨液以及使用该研磨液的研磨方法 |
WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
JP5648567B2 (ja) * | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
CN103222036B (zh) | 2010-11-22 | 2016-11-09 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
KR20130129397A (ko) | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
KR101293790B1 (ko) * | 2010-12-31 | 2013-08-06 | 제일모직주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
KR102028217B1 (ko) * | 2011-11-25 | 2019-10-02 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
KR101325343B1 (ko) * | 2011-12-29 | 2013-11-08 | 주식회사 케이씨텍 | 연마 제1 입자 및 연마 제2 입자를 포함하는 cmp 슬러리 조성물 |
CN102533129A (zh) * | 2011-12-30 | 2012-07-04 | 大连三达奥克化学股份有限公司 | 不锈钢工件振磨光饰剂及生产方法 |
CN102533128A (zh) * | 2011-12-30 | 2012-07-04 | 大连三达奥克化学股份有限公司 | 铜及铜合金工件振磨光饰剂及生产方法 |
US10557058B2 (en) | 2012-02-21 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set, and substrate polishing method |
US9346977B2 (en) | 2012-02-21 | 2016-05-24 | Hitachi Chemical Company, Ltd. | Abrasive, abrasive set, and method for abrading substrate |
JP5943072B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
SG11201407086TA (en) | 2012-05-22 | 2015-02-27 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
JP5943073B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
JP6332041B2 (ja) * | 2014-01-20 | 2018-05-30 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
SG11201607359XA (en) * | 2014-03-20 | 2016-10-28 | Fujimi Inc | Polishing composition, polishing method, and method for producing substrate |
US9309442B2 (en) * | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
KR101613359B1 (ko) * | 2014-07-15 | 2016-04-27 | 에스케이하이닉스 주식회사 | 화학적 기계적 연마용 나노 세리아 슬러리 조성물 및 이의 제조방법 |
US20170183537A1 (en) * | 2014-08-26 | 2017-06-29 | K.C. Tech Co., Ltd | Polishing slurry composition |
WO2016032145A1 (ko) * | 2014-08-26 | 2016-03-03 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
KR101660384B1 (ko) * | 2014-10-30 | 2016-09-27 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
CN105826179B (zh) * | 2015-01-06 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
KR101710580B1 (ko) * | 2015-07-23 | 2017-02-27 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
US10077381B2 (en) | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
CN105598825A (zh) * | 2015-12-24 | 2016-05-25 | 天津晶岭微电子材料有限公司 | 提高glsi硅通孔碱性cmp中铜膜厚度一致性的方法 |
KR102522528B1 (ko) * | 2016-09-21 | 2023-04-17 | 가부시끼가이샤 레조낙 | 슬러리 및 연마 방법 |
CN108250978A (zh) * | 2016-12-28 | 2018-07-06 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液及其应用 |
WO2018147074A1 (ja) * | 2017-02-08 | 2018-08-16 | 日立化成株式会社 | 研磨液及び研磨方法 |
CN107236519A (zh) * | 2017-05-19 | 2017-10-10 | 南通华兴石油仪器有限公司 | 一种石油仪器用研磨液 |
US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
US11469182B2 (en) * | 2020-11-10 | 2022-10-11 | Nanya Technology Corporation | Semiconductor device structure with manganese-containing lining layer and method for preparing the same |
US11646268B2 (en) * | 2020-11-13 | 2023-05-09 | Nanya Technology Corporation | Semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing liner having different thicknesses |
WO2022254841A1 (ja) * | 2021-06-01 | 2022-12-08 | 信越半導体株式会社 | 両面研磨方法及び両面研磨シリコンウェーハ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005302974A (ja) * | 2004-04-12 | 2005-10-27 | Jsr Corp | 化学機械研磨用水系分散体及び化学機械研磨方法 |
JP2005302973A (ja) * | 2004-04-12 | 2005-10-27 | Jsr Corp | 化学機械研磨用水系分散体及び化学機械研磨方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
JP3416855B2 (ja) * | 1994-04-15 | 2003-06-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US6143662A (en) * | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
CN1197687C (zh) * | 1998-06-29 | 2005-04-20 | 台湾积体电路制造股份有限公司 | 化学机械研磨机台 |
JP4544379B2 (ja) * | 1999-06-28 | 2010-09-15 | 日産化学工業株式会社 | ガラス製ハードディスク用研磨剤 |
US6527817B1 (en) * | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
JP3490038B2 (ja) * | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
ATE302830T1 (de) * | 2000-03-31 | 2005-09-15 | Poliermittel und verfahren zur herstellung planarer schichten | |
JP4253141B2 (ja) | 2000-08-21 | 2009-04-08 | 株式会社東芝 | 化学機械研磨用スラリおよび半導体装置の製造方法 |
KR100481651B1 (ko) * | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
JP2003113369A (ja) | 2001-07-10 | 2003-04-18 | Sumitomo Chem Co Ltd | 金属研磨材組成物及び研磨方法 |
US6638328B1 (en) * | 2002-04-25 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd | Bimodal slurry system |
CN100336179C (zh) * | 2002-04-30 | 2007-09-05 | 日立化成工业株式会社 | 研磨液及研磨方法 |
JP2003347248A (ja) | 2002-05-28 | 2003-12-05 | Hitachi Chem Co Ltd | 半導体絶縁膜用cmp研磨剤及び基板の研磨方法 |
TWI334882B (en) * | 2004-03-12 | 2010-12-21 | K C Tech Co Ltd | Polishing slurry and method of producing same |
JP2005285944A (ja) | 2004-03-29 | 2005-10-13 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
US20070196975A1 (en) * | 2004-04-12 | 2007-08-23 | Hitachi Chemical Co., Ltd. | Metal-Polishing Liquid And Polishing Method Using The Same |
DE602005023557D1 (de) | 2004-04-12 | 2010-10-28 | Jsr Corp | Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren |
US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
JP2006128552A (ja) | 2004-11-01 | 2006-05-18 | Hitachi Chem Co Ltd | Cmp用研磨液及び研磨方法 |
JP2006147993A (ja) | 2004-11-24 | 2006-06-08 | Hitachi Chem Co Ltd | Cmp用研磨液及び研磨方法 |
JP4776269B2 (ja) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜cmp用スラリー、および半導体装置の製造方法 |
TWI271555B (en) * | 2005-06-13 | 2007-01-21 | Basf Ag | Slurry composition for polishing color filter |
JP2007012679A (ja) | 2005-06-28 | 2007-01-18 | Asahi Glass Co Ltd | 研磨剤および半導体集積回路装置の製造方法 |
JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、GaxIn1−xAsyP1−y結晶の表面処理方法およびGaxIn1−xAsyP1−y結晶基板 |
JP5533664B2 (ja) * | 2008-11-10 | 2014-06-25 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
-
2008
- 2008-02-22 JP JP2009501221A patent/JP5381701B2/ja active Active
- 2008-02-22 WO PCT/JP2008/053065 patent/WO2008105342A1/ja active Application Filing
- 2008-02-22 CN CN201210144194.3A patent/CN102690607B/zh active Active
- 2008-02-22 CN CN200880005185.8A patent/CN101611476B/zh active Active
- 2008-02-22 US US12/527,607 patent/US8821750B2/en active Active
- 2008-02-22 KR KR1020097016963A patent/KR101418626B1/ko active IP Right Grant
- 2008-02-27 TW TW097106916A patent/TWI410469B/zh active
-
2012
- 2012-07-13 JP JP2012157758A patent/JP5533951B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005302974A (ja) * | 2004-04-12 | 2005-10-27 | Jsr Corp | 化学機械研磨用水系分散体及び化学機械研磨方法 |
JP2005302973A (ja) * | 2004-04-12 | 2005-10-27 | Jsr Corp | 化学機械研磨用水系分散体及び化学機械研磨方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231486A (ja) * | 2008-03-21 | 2009-10-08 | Kao Corp | シリコンウエハ用研磨液組成物 |
JP2010080499A (ja) * | 2008-09-24 | 2010-04-08 | Fujifilm Corp | 研磨液 |
JP2010114402A (ja) * | 2008-10-07 | 2010-05-20 | Hitachi Chem Co Ltd | Cmp用研磨液及びこのcmp用研磨液を用いた研磨方法 |
JP2012512757A (ja) * | 2008-12-20 | 2012-06-07 | キャボット マイクロエレクトロニクス コーポレイション | ワイヤーソー切断の間の乾燥性を向上させるための組成物 |
JPWO2013069623A1 (ja) * | 2011-11-08 | 2015-04-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2013069623A1 (ja) * | 2011-11-08 | 2013-05-16 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
RU2620836C2 (ru) * | 2011-11-08 | 2017-05-30 | Фудзими Инкорпорейтед | Полирующий состав |
CN102786879A (zh) * | 2012-07-17 | 2012-11-21 | 清华大学 | 钛酸钡化学机械抛光水性组合物及其应用 |
WO2014061417A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Cmp用研磨液、貯蔵液及び研磨方法 |
JP2017155242A (ja) * | 2013-04-02 | 2017-09-07 | 信越化学工業株式会社 | コロイダルシリカ研磨材 |
CN104119802B (zh) * | 2014-08-06 | 2015-09-02 | 江苏天恒纳米科技股份有限公司 | 一种蓝宝石材料表面超精密加工专用纳米浆料 |
CN104119802A (zh) * | 2014-08-06 | 2014-10-29 | 江苏天恒纳米科技股份有限公司 | 一种蓝宝石材料表面超精密加工专用纳米浆料 |
WO2017002705A1 (ja) * | 2015-06-30 | 2017-01-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
Publication number | Publication date |
---|---|
CN102690607A (zh) | 2012-09-26 |
CN101611476B (zh) | 2015-11-25 |
US8821750B2 (en) | 2014-09-02 |
JP5381701B2 (ja) | 2014-01-08 |
CN101611476A (zh) | 2009-12-23 |
US20100120250A1 (en) | 2010-05-13 |
JP5533951B2 (ja) | 2014-06-25 |
TW200918622A (en) | 2009-05-01 |
JPWO2008105342A1 (ja) | 2010-06-03 |
KR20090128389A (ko) | 2009-12-15 |
TWI410469B (zh) | 2013-10-01 |
JP2012231170A (ja) | 2012-11-22 |
KR101418626B1 (ko) | 2014-07-14 |
CN102690607B (zh) | 2015-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008105342A1 (ja) | 金属用研磨液及び研磨方法 | |
JP6542761B2 (ja) | 混合研磨材の研磨組成物 | |
KR102267841B1 (ko) | 중합체 필름의 화학-기계적 평탄화 | |
SG148913A1 (en) | Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same | |
SG148912A1 (en) | Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same | |
JP4901301B2 (ja) | 研磨方法及び半導体装置の製造方法 | |
US20130186850A1 (en) | Slurry for cobalt applications | |
TWI547551B (zh) | Cmp研磨液以及研磨方法 | |
TWI679272B (zh) | 研磨用組成物及使用其之研磨方法 | |
TW200643157A (en) | Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method | |
SG157354A1 (en) | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios | |
JP6327326B2 (ja) | 金属用研磨液及び研磨方法 | |
TW200802580A (en) | Polishing slurry for chemical mechanical polishing (CMP) and polishing method | |
WO2009037903A1 (ja) | シリコン膜研磨用cmpスラリー及び研磨方法 | |
WO2008156054A1 (ja) | 研磨用組成物および半導体集積回路装置の製造方法 | |
WO2008120578A1 (ja) | 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法 | |
CN103042464A (zh) | 用于化学机械抛光钨的方法 | |
Wang et al. | An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers | |
CN103205205B (zh) | 一种碱性化学机械抛光液 | |
CN106553119B (zh) | 抛光半导体衬底的方法 | |
US10035929B2 (en) | pH-adjuster free chemical mechanical planarization slurry | |
Wang et al. | The Behaviors of Alkaline Slurry during the CMP of TSV Backside Heterogeneous Microstructure | |
US8288283B2 (en) | Aluminum enhanced palladium CMP process | |
WO2023032929A1 (ja) | 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法 | |
CN105297024A (zh) | 一种化学机械抛光液在提高钽抛光速率中的应用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880005185.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08711836 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009501221 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020097016963 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12527607 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08711836 Country of ref document: EP Kind code of ref document: A1 |