ATE338100T1 - Cmp-zusammensetzung enthaltend silanmodifizierte- schleifteilchen - Google Patents
Cmp-zusammensetzung enthaltend silanmodifizierte- schleifteilchenInfo
- Publication number
- ATE338100T1 ATE338100T1 AT00943380T AT00943380T ATE338100T1 AT E338100 T1 ATE338100 T1 AT E338100T1 AT 00943380 T AT00943380 T AT 00943380T AT 00943380 T AT00943380 T AT 00943380T AT E338100 T1 ATE338100 T1 AT E338100T1
- Authority
- AT
- Austria
- Prior art keywords
- abrasive particles
- composition containing
- containing silane
- cmp composition
- modified abrasive
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000002245 particle Substances 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 abstract 3
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910000000 metal hydroxide Inorganic materials 0.000 abstract 1
- 150000004692 metal hydroxides Chemical class 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- -1 silane compound Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Disintegrating Or Milling (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14270699P | 1999-07-07 | 1999-07-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE338100T1 true ATE338100T1 (de) | 2006-09-15 |
Family
ID=22500954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00943380T ATE338100T1 (de) | 1999-07-07 | 2000-07-05 | Cmp-zusammensetzung enthaltend silanmodifizierte- schleifteilchen |
Country Status (14)
Country | Link |
---|---|
US (2) | US6582623B1 (de) |
EP (1) | EP1200532B1 (de) |
JP (2) | JP2003520283A (de) |
KR (1) | KR100590665B1 (de) |
CN (1) | CN1209429C (de) |
AT (1) | ATE338100T1 (de) |
AU (1) | AU5785700A (de) |
CA (1) | CA2378492A1 (de) |
DE (1) | DE60030444T2 (de) |
HK (1) | HK1046151A1 (de) |
IL (1) | IL147039A0 (de) |
MY (1) | MY126717A (de) |
TW (1) | TW538110B (de) |
WO (1) | WO2001004226A2 (de) |
Families Citing this family (103)
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JP2003522424A (ja) | 2000-02-02 | 2003-07-22 | ロデール ホールディングス インコーポレイテッド | 研磨組成物 |
US6646348B1 (en) * | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
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JP7031485B2 (ja) * | 2018-05-11 | 2022-03-08 | 昭和電工マテリアルズ株式会社 | Cmp研磨剤及びその製造方法、並びにcmp研磨方法 |
US12030781B2 (en) * | 2019-03-29 | 2024-07-09 | The Coretec Group Inc. | Method of preparing cyclosilane |
KR102525287B1 (ko) * | 2019-10-18 | 2023-04-24 | 삼성에스디아이 주식회사 | 구리 막 연마용 cmp 슬러리 조성물 및 이를 이용한 구리 막 연마 방법 |
CN111087930A (zh) * | 2019-12-23 | 2020-05-01 | 长江存储科技有限责任公司 | 一种化学机械抛光研磨剂的制备方法及化学机械抛光方法 |
WO2021133901A1 (en) | 2019-12-27 | 2021-07-01 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive articles and methods of forming same |
KR102589505B1 (ko) * | 2020-03-03 | 2023-10-13 | 삼성에스디아이 주식회사 | 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 구리 막 연마 방법 |
KR102619857B1 (ko) * | 2020-05-20 | 2023-12-29 | 삼성에스디아이 주식회사 | 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법 |
KR102415203B1 (ko) * | 2020-08-24 | 2022-06-30 | 에스케이씨솔믹스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
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CN112680187A (zh) * | 2021-01-04 | 2021-04-20 | 上海晖研材料科技有限公司 | 一种表面改性的二氧化硅及含其的磨料组合物 |
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US4563483A (en) * | 1983-07-06 | 1986-01-07 | Creative Products Resource Ltd. | Concrete cleaning composition |
US5226930A (en) * | 1988-06-03 | 1993-07-13 | Monsanto Japan, Ltd. | Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
JP3303544B2 (ja) | 1994-07-27 | 2002-07-22 | ソニー株式会社 | 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法 |
US5645736A (en) | 1995-12-29 | 1997-07-08 | Symbios Logic Inc. | Method for polishing a wafer |
JP3927270B2 (ja) * | 1996-12-27 | 2007-06-06 | 富士通株式会社 | 研磨剤、研磨方法および半導体装置の製造方法 |
US6299659B1 (en) * | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
US6372648B1 (en) | 1998-11-16 | 2002-04-16 | Texas Instruments Incorporated | Integrated circuit planarization method |
KR100590665B1 (ko) * | 1999-07-07 | 2006-06-19 | 캐보트 마이크로일렉트로닉스 코포레이션 | 실란으로 개질된 연마제 입자를 함유하는 cmp 조성물 |
-
2000
- 2000-07-05 KR KR20027000127A patent/KR100590665B1/ko active IP Right Grant
- 2000-07-05 US US09/609,884 patent/US6582623B1/en not_active Expired - Lifetime
- 2000-07-05 WO PCT/US2000/018342 patent/WO2001004226A2/en active IP Right Grant
- 2000-07-05 EP EP00943380A patent/EP1200532B1/de not_active Expired - Lifetime
- 2000-07-05 AU AU57857/00A patent/AU5785700A/en not_active Abandoned
- 2000-07-05 JP JP2001509432A patent/JP2003520283A/ja not_active Withdrawn
- 2000-07-05 CN CNB008092818A patent/CN1209429C/zh not_active Expired - Lifetime
- 2000-07-05 CA CA002378492A patent/CA2378492A1/en not_active Abandoned
- 2000-07-05 AT AT00943380T patent/ATE338100T1/de not_active IP Right Cessation
- 2000-07-05 DE DE60030444T patent/DE60030444T2/de not_active Expired - Lifetime
- 2000-07-05 IL IL14703900A patent/IL147039A0/xx unknown
- 2000-07-07 MY MYPI20003110 patent/MY126717A/en unknown
- 2000-07-07 TW TW089113522A patent/TW538110B/zh not_active IP Right Cessation
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2002
- 2002-10-26 HK HK02107771.8A patent/HK1046151A1/zh unknown
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2003
- 2003-06-06 US US10/456,858 patent/US20030209522A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
CA2378492A1 (en) | 2001-01-18 |
KR100590665B1 (ko) | 2006-06-19 |
EP1200532B1 (de) | 2006-08-30 |
MY126717A (en) | 2006-10-31 |
WO2001004226A3 (en) | 2002-10-03 |
DE60030444T2 (de) | 2006-12-14 |
HK1046151A1 (zh) | 2002-12-27 |
EP1200532A1 (de) | 2002-05-02 |
US20030209522A1 (en) | 2003-11-13 |
JP2003520283A (ja) | 2003-07-02 |
KR20020026940A (ko) | 2002-04-12 |
IL147039A0 (en) | 2002-08-14 |
DE60030444D1 (de) | 2006-10-12 |
WO2001004226A2 (en) | 2001-01-18 |
AU5785700A (en) | 2001-01-30 |
CN1367809A (zh) | 2002-09-04 |
US6582623B1 (en) | 2003-06-24 |
JP2007088499A (ja) | 2007-04-05 |
TW538110B (en) | 2003-06-21 |
CN1209429C (zh) | 2005-07-06 |
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