DE60030444D1 - Cmp-zusammensetzung enthaltend silanmodifizierte-schleifteilchen - Google Patents

Cmp-zusammensetzung enthaltend silanmodifizierte-schleifteilchen

Info

Publication number
DE60030444D1
DE60030444D1 DE60030444T DE60030444T DE60030444D1 DE 60030444 D1 DE60030444 D1 DE 60030444D1 DE 60030444 T DE60030444 T DE 60030444T DE 60030444 T DE60030444 T DE 60030444T DE 60030444 D1 DE60030444 D1 DE 60030444D1
Authority
DE
Germany
Prior art keywords
silano
composition containing
cmp composition
grinding particles
modified grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030444T
Other languages
English (en)
Other versions
DE60030444T2 (de
Inventor
K Grumbine
C Streinz
Shumin Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of DE60030444D1 publication Critical patent/DE60030444D1/de
Publication of DE60030444T2 publication Critical patent/DE60030444T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
DE60030444T 1999-07-07 2000-07-05 Cmp-zusammensetzung enthaltend silanmodifizierte-schleifteilchen Expired - Lifetime DE60030444T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14270699P 1999-07-07 1999-07-07
US142706P 1999-07-07
PCT/US2000/018342 WO2001004226A2 (en) 1999-07-07 2000-07-05 Cmp composition containing silane modified abrasive particles

Publications (2)

Publication Number Publication Date
DE60030444D1 true DE60030444D1 (de) 2006-10-12
DE60030444T2 DE60030444T2 (de) 2006-12-14

Family

ID=22500954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030444T Expired - Lifetime DE60030444T2 (de) 1999-07-07 2000-07-05 Cmp-zusammensetzung enthaltend silanmodifizierte-schleifteilchen

Country Status (14)

Country Link
US (2) US6582623B1 (de)
EP (1) EP1200532B1 (de)
JP (2) JP2003520283A (de)
KR (1) KR100590665B1 (de)
CN (1) CN1209429C (de)
AT (1) ATE338100T1 (de)
AU (1) AU5785700A (de)
CA (1) CA2378492A1 (de)
DE (1) DE60030444T2 (de)
HK (1) HK1046151A1 (de)
IL (1) IL147039A0 (de)
MY (1) MY126717A (de)
TW (1) TW538110B (de)
WO (1) WO2001004226A2 (de)

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KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법
KR102415203B1 (ko) * 2020-08-24 2022-06-30 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
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HK1046151A1 (zh) 2002-12-27
ATE338100T1 (de) 2006-09-15
TW538110B (en) 2003-06-21
DE60030444T2 (de) 2006-12-14
EP1200532B1 (de) 2006-08-30
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KR20020026940A (ko) 2002-04-12
CN1367809A (zh) 2002-09-04
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US6582623B1 (en) 2003-06-24
JP2007088499A (ja) 2007-04-05
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