HK1046151A1 - 含硅烷改性研磨顆粒的化學機械拋光(cmp)組合物 - Google Patents

含硅烷改性研磨顆粒的化學機械拋光(cmp)組合物

Info

Publication number
HK1046151A1
HK1046151A1 HK02107771.8A HK02107771A HK1046151A1 HK 1046151 A1 HK1046151 A1 HK 1046151A1 HK 02107771 A HK02107771 A HK 02107771A HK 1046151 A1 HK1046151 A1 HK 1046151A1
Authority
HK
Hong Kong
Prior art keywords
abrasive particles
composition containing
containing silane
cmp composition
silane modified
Prior art date
Application number
HK02107771.8A
Other languages
English (en)
Inventor
史蒂文‧K‧格魯姆賓
克里斯托弗‧C‧斯特賴恩茲
王淑敏
Original Assignee
卡伯特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡伯特微電子公司 filed Critical 卡伯特微電子公司
Publication of HK1046151A1 publication Critical patent/HK1046151A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
HK02107771.8A 1999-07-07 2002-10-26 含硅烷改性研磨顆粒的化學機械拋光(cmp)組合物 HK1046151A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14270699P 1999-07-07 1999-07-07
PCT/US2000/018342 WO2001004226A2 (en) 1999-07-07 2000-07-05 Cmp composition containing silane modified abrasive particles

Publications (1)

Publication Number Publication Date
HK1046151A1 true HK1046151A1 (zh) 2002-12-27

Family

ID=22500954

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02107771.8A HK1046151A1 (zh) 1999-07-07 2002-10-26 含硅烷改性研磨顆粒的化學機械拋光(cmp)組合物

Country Status (14)

Country Link
US (2) US6582623B1 (zh)
EP (1) EP1200532B1 (zh)
JP (2) JP2003520283A (zh)
KR (1) KR100590665B1 (zh)
CN (1) CN1209429C (zh)
AT (1) ATE338100T1 (zh)
AU (1) AU5785700A (zh)
CA (1) CA2378492A1 (zh)
DE (1) DE60030444T2 (zh)
HK (1) HK1046151A1 (zh)
IL (1) IL147039A0 (zh)
MY (1) MY126717A (zh)
TW (1) TW538110B (zh)
WO (1) WO2001004226A2 (zh)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
CA2378492A1 (en) * 1999-07-07 2001-01-18 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles
US7070485B2 (en) 2000-02-02 2006-07-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
DE60215095T2 (de) 2001-09-19 2007-05-10 Parker-Hannifin Corp., Cleveland Motorantrieb und System
JPWO2003038883A1 (ja) * 2001-10-31 2005-02-24 日立化成工業株式会社 研磨液及び研磨方法
JP2003277731A (ja) * 2002-03-26 2003-10-02 Catalysts & Chem Ind Co Ltd 研磨用粒子および研磨材
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
US6833186B2 (en) 2002-04-10 2004-12-21 Ppg Industries Ohio, Inc. Mineral-filled coatings having enhanced abrasion resistance and wear clarity and methods for using the same
JP4554142B2 (ja) * 2002-04-30 2010-09-29 日揮触媒化成株式会社 基板洗浄用粒子および該基板洗浄用粒子を含む洗浄材、基材の洗浄方法
US6706398B1 (en) * 2002-09-13 2004-03-16 Dow Corning Corporation Organosilicon compounds and blends for treating silica
KR100442549B1 (ko) * 2002-10-16 2004-07-30 제일모직주식회사 연마성능이 우수하고 안정성이 향상된, 금속 연마를 위한ｃｍｐ용 슬러리 조성물 및 그 제조방법
US6893476B2 (en) 2002-12-09 2005-05-17 Dupont Air Products Nanomaterials Llc Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
IL157681A0 (en) 2003-09-01 2004-03-28 J G Systems Inc Improved abrasives for chemical-mechanical polishing applications
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
FR2872823B1 (fr) * 2004-07-08 2006-10-06 Kemesys Composition de polissage mecano chimique, procede de preparation, et utilisation
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
KR100704831B1 (ko) * 2005-06-01 2007-04-09 주식회사 아이너스기술 3차원 스캐너를 이용한 실시간 검사 안내 시스템 및 방법
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
SG173361A1 (en) 2006-07-12 2011-08-29 Cabot Microelectronics Corp Cmp method for metal-containing substrates
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
CN101338082A (zh) * 2007-07-06 2009-01-07 安集微电子（上海）有限公司 改性二氧化硅溶胶及其制备方法和应用
EP2197972B1 (en) * 2007-09-21 2020-04-01 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
WO2009042073A2 (en) * 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
BRPI0911453A2 (pt) * 2008-04-18 2018-03-20 Saint Gobain Abrasifs Sa modificação da superfície de silanos hidrófilos e hidrfóbicos de orgãos abrasivos
JP5843613B2 (ja) * 2009-01-20 2016-01-13 キャボット コーポレイションＣａｂｏｔ Ｃｏｒｐｏｒａｔｉｏｎ シラン変性金属酸化物を含む組成物
US9309448B2 (en) 2010-02-24 2016-04-12 Basf Se Abrasive articles, method for their preparation and method of their use
KR101243331B1 (ko) * 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
EP2658680B1 (en) 2010-12-31 2020-12-09 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles comprising abrasive particles having particular shapes and methods of forming such articles
US8986409B2 (en) 2011-06-30 2015-03-24 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles including abrasive particles of silicon nitride
EP2726248B1 (en) 2011-06-30 2019-06-19 Saint-Gobain Ceramics & Plastics, Inc. Liquid phase sintered silicon carbide abrasive particles
BR112014007089A2 (pt) 2011-09-26 2017-03-28 Saint-Gobain Ceram & Plastics Inc artigos abrasivos incluindo materiais de partículas abrasivas, abrasivos revestidos usando os materiais de partículas abrasivas e os métodos de formação
JP5903502B2 (ja) 2011-12-30 2016-04-13 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 成形研磨粒子を備える粒子材料
JP6033886B2 (ja) 2011-12-30 2016-11-30 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 成形研磨粒子および同粒子を形成する方法
RU2014130167A (ru) 2011-12-30 2016-02-27 Сэнт-Гобэйн Керамикс Энд Пластикс Инк. Получение формованных абразивных частиц
RU2602581C2 (ru) 2012-01-10 2016-11-20 Сэнт - Гобэйн Керамикс Энд Пластик,Инк. Абразивные частицы, имеющие сложные формы, и способы их формования
US8840696B2 (en) 2012-01-10 2014-09-23 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having particular shapes and methods of forming such particles
WO2013149209A1 (en) 2012-03-30 2013-10-03 Saint-Gobain Abrasives, Inc. Abrasive products having fibrillated fibers
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
KR101813466B1 (ko) 2012-05-23 2017-12-29 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 형상화 연마입자들 및 이의 형성방법
KR20150023034A (ko) 2012-06-29 2015-03-04 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 특정 형상을 가지는 연마입자들 및 이러한 입자들 형성방법
KR101736085B1 (ko) 2012-10-15 2017-05-16 생-고뱅 어브레이시브즈, 인코포레이티드 특정한 형태들을 가진 연마 입자들 및 이러한 입자들을 형성하는 방법들
JP6057706B2 (ja) * 2012-12-28 2017-01-11 株式会社フジミインコーポレーテッド 研磨用組成物
US9074119B2 (en) 2012-12-31 2015-07-07 Saint-Gobain Ceramics & Plastics, Inc. Particulate materials and methods of forming same
KR101427883B1 (ko) 2013-02-08 2014-08-07 주식회사 케이씨텍 표면 개질된 연마입자, 그의 제조 방법 및 그를 포함하는 슬러리 조성물
MX2015013831A (es) 2013-03-29 2016-03-01 Saint Gobain Abrasives Inc Particulas abrasivas con formas particulares y metodos para elaborar las particulas.
JP6373982B2 (ja) * 2013-06-24 2018-08-15 スリーエム イノベイティブ プロパティズ カンパニー 研磨粒子、研磨粒子の作製方法、及び研磨物品
TW201502263A (zh) 2013-06-28 2015-01-16 Saint Gobain Ceramics 包含成形研磨粒子之研磨物品
CN104371553B (zh) * 2013-08-14 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液以及应用
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
EP3048152A4 (en) * 2013-09-20 2016-10-19 Fujimi Inc POLISHING COMPOSITION
JP2016538149A (ja) 2013-09-30 2016-12-08 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 形状化研磨粒子及び形状化研磨粒子を形成する方法
WO2015087771A1 (ja) * 2013-12-13 2015-06-18 株式会社フジミインコーポレーテッド 金属酸化物膜付き物品
CN104745083B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
WO2015102992A1 (en) 2013-12-31 2015-07-09 Saint-Gobain Abrasives, Inc. Abrasive article including shaped abrasive particles
US9771507B2 (en) 2014-01-31 2017-09-26 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle including dopant material and method of forming same
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
CA2945493C (en) 2014-04-14 2020-08-04 Saint-Gobain Ceramics & Plastics, Inc. Abrasive article including shaped abrasive particles
CN106457522B (zh) 2014-04-14 2020-03-24 圣戈本陶瓷及塑料股份有限公司 包括成形磨粒的研磨制品
US9902045B2 (en) 2014-05-30 2018-02-27 Saint-Gobain Abrasives, Inc. Method of using an abrasive article including shaped abrasive particles
KR102501107B1 (ko) 2014-06-25 2023-02-17 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
WO2015200679A1 (en) * 2014-06-25 2015-12-30 Cabot Microelectronics Corporation Tungsten chemical-mechanical polishing composition
TWI564380B (zh) * 2014-06-25 2017-01-01 卡博特微電子公司 銅障壁層化學機械拋光組合物
CN104263248B (zh) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 一种适用于低下压力的弱酸性铜抛光液
US9707529B2 (en) 2014-12-23 2017-07-18 Saint-Gobain Ceramics & Plastics, Inc. Composite shaped abrasive particles and method of forming same
US9914864B2 (en) 2014-12-23 2018-03-13 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particles and method of forming same
US9676981B2 (en) 2014-12-24 2017-06-13 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle fractions and method of forming same
CN105985522B (zh) * 2014-12-24 2019-06-28 财团法人工业技术研究院 高分支聚硅氧烷与混成材料及其形成方法
TWI634200B (zh) 2015-03-31 2018-09-01 聖高拜磨料有限公司 固定磨料物品及其形成方法
WO2016161157A1 (en) 2015-03-31 2016-10-06 Saint-Gobain Abrasives, Inc. Fixed abrasive articles and methods of forming same
CA3118239A1 (en) 2015-06-11 2016-12-15 Saint-Gobain Ceramics & Plastics, Inc. Abrasive article including shaped abrasive particles
JP6408453B2 (ja) * 2015-11-16 2018-10-17 信越化学工業株式会社 研磨組成物及び研磨方法
SI3455321T1 (sl) 2016-05-10 2022-10-28 Saint-Gobain Ceramics & Plastics, Inc. Metode oblikovanja abrazivnih delcev
KR102313436B1 (ko) 2016-05-10 2021-10-19 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 연마 입자들 및 그 형성 방법
WO2018052097A1 (ja) * 2016-09-15 2018-03-22 株式会社Flosfia 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法
US11230653B2 (en) 2016-09-29 2022-01-25 Saint-Gobain Abrasives, Inc. Fixed abrasive articles and methods of forming same
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
US10759024B2 (en) 2017-01-31 2020-09-01 Saint-Gobain Ceramics & Plastics, Inc. Abrasive article including shaped abrasive particles
US10563105B2 (en) 2017-01-31 2020-02-18 Saint-Gobain Ceramics & Plastics, Inc. Abrasive article including shaped abrasive particles
US10865148B2 (en) 2017-06-21 2020-12-15 Saint-Gobain Ceramics & Plastics, Inc. Particulate materials and methods of forming same
CN110869206B (zh) * 2017-07-11 2023-06-30 3M创新有限公司 包括可适形涂层的磨料制品和由此形成的抛光系统
JP7031485B2 (ja) * 2018-05-11 2022-03-08 昭和電工マテリアルズ株式会社 Ｃｍｐ研磨剤及びその製造方法、並びにｃｍｐ研磨方法
KR20210146329A (ko) * 2019-03-29 2021-12-03 더 코어텍 그룹 아이앤씨. 사이클로실란 제조 방법
KR102525287B1 (ko) * 2019-10-18 2023-04-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
CN111087930A (zh) * 2019-12-23 2020-05-01 长江存储科技有限责任公司 一种化学机械抛光研磨剂的制备方法及化学机械抛光方法
WO2021133901A1 (en) 2019-12-27 2021-07-01 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles and methods of forming same
KR102589505B1 (ko) * 2020-03-03 2023-10-13 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법
KR102415203B1 (ko) * 2020-08-24 2022-06-30 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102577164B1 (ko) * 2020-12-29 2023-09-08 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 기판의 연마방법
CN112680187A (zh) * 2021-01-04 2021-04-20 上海晖研材料科技有限公司 一种表面改性的二氧化硅及含其的磨料组合物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563483A (en) * 1983-07-06 1986-01-07 Creative Products Resource Ltd. Concrete cleaning composition
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
JP3303544B2 (ja) * 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
US5645736A (en) 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
JP3927270B2 (ja) * 1996-12-27 2007-06-06 富士通株式会社 研磨剤、研磨方法および半導体装置の製造方法
US6299659B1 (en) * 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
US6372648B1 (en) 1998-11-16 2002-04-16 Texas Instruments Incorporated Integrated circuit planarization method
CA2378492A1 (en) * 1999-07-07 2001-01-18 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles

Also Published As

Publication number Publication date
JP2003520283A (ja) 2003-07-02
US20030209522A1 (en) 2003-11-13
MY126717A (en) 2006-10-31
AU5785700A (en) 2001-01-30
ATE338100T1 (de) 2006-09-15
TW538110B (en) 2003-06-21
DE60030444T2 (de) 2006-12-14
EP1200532B1 (en) 2006-08-30
KR100590665B1 (ko) 2006-06-19
KR20020026940A (ko) 2002-04-12
CN1367809A (zh) 2002-09-04
DE60030444D1 (de) 2006-10-12
WO2001004226A3 (en) 2002-10-03
EP1200532A1 (en) 2002-05-02
US6582623B1 (en) 2003-06-24
JP2007088499A (ja) 2007-04-05
CN1209429C (zh) 2005-07-06
CA2378492A1 (en) 2001-01-18
IL147039A0 (en) 2002-08-14
WO2001004226A2 (en) 2001-01-18

Similar Documents

Publication Publication Date Title
IL147039A0 (en) Cmp composition containing silane modified abrasive particles
WO2004072199A3 (en) Mixed-abrasive polishing composition and method for using the same
AU4810200A (en) Slurry composition and method of chemical mechanical polishing using same
AU2266301A (en) Method of polishing or planarizing a substrate
AU2002213054A1 (en) Ceramic aggregate particles
TW200516132A (en) Abrasive particles for chemical mechanical polishing
WO2006074248A3 (en) Engineered non-polymeric organic particles for chemical mechanical planarization
AU1660001A (en) Composition and method for planarizing surfaces
AU2001271308A1 (en) Polishing composition for metal cmp
MY150866A (en) Compositions and methods for polishing silicon nitride materials
EP2394960A3 (en) Method for producing cerium oxide
ATE361960T1 (de) Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren
TW365563B (en) Polishing agent for semiconductor and method for its production
MX9709110A (es) Rueda abrasiva de alumina con retencion de esquema mejorada.
AU1660101A (en) Composition and method for planarizing surfaces
TWI319761B (en) Cerium oxide abrasive and slurry containing the same
EP1610367A3 (en) Cerium oxide abrasive and method of polishing substrates
GB2357510B (en) Powder coating compositions
TW200740972A (en) Metal polishing slurry
MY153666A (en) Cmp method for metal-containing substrates
MY128556A (en) Use of a wafer edge polishing composition
TW200738856A (en) Polishing composition and polishing method
UA88774C2 (ru) противозасаливающая композиция, абразивное изделие, содержащее противозасаливающую композицию, и процесс шлифования поверхности
TW200717635A (en) Polishing method for semiconductor wafer
MY154310A (en) Onium-containing cmp compositions and methods for use thereof