DE602004027901D1 - Belegte metalloxidteilchen für cmp - Google Patents
Belegte metalloxidteilchen für cmpInfo
- Publication number
- DE602004027901D1 DE602004027901D1 DE602004027901T DE602004027901T DE602004027901D1 DE 602004027901 D1 DE602004027901 D1 DE 602004027901D1 DE 602004027901 T DE602004027901 T DE 602004027901T DE 602004027901 T DE602004027901 T DE 602004027901T DE 602004027901 D1 DE602004027901 D1 DE 602004027901D1
- Authority
- DE
- Germany
- Prior art keywords
- polishing composition
- metal oxide
- oxide particles
- substrate
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 title abstract 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 3
- 150000004706 metal oxides Chemical class 0.000 title abstract 3
- 238000005498 polishing Methods 0.000 abstract 6
- 229920000642 polymer Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- -1 silane compound Chemical class 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 229920003169 water-soluble polymer Polymers 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/419,580 US7044836B2 (en) | 2003-04-21 | 2003-04-21 | Coated metal oxide particles for CMP |
PCT/US2004/012133 WO2004094547A2 (en) | 2003-04-21 | 2004-04-19 | Coated metal oxide particles for cmp |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004027901D1 true DE602004027901D1 (de) | 2010-08-12 |
Family
ID=33159333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004027901T Expired - Lifetime DE602004027901D1 (de) | 2003-04-21 | 2004-04-19 | Belegte metalloxidteilchen für cmp |
Country Status (9)
Country | Link |
---|---|
US (1) | US7044836B2 (de) |
EP (1) | EP1620518B1 (de) |
JP (1) | JP4782673B2 (de) |
KR (1) | KR101195289B1 (de) |
CN (2) | CN102127370A (de) |
AT (1) | ATE472582T1 (de) |
DE (1) | DE602004027901D1 (de) |
TW (1) | TWI268954B (de) |
WO (1) | WO2004094547A2 (de) |
Families Citing this family (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
US7709053B2 (en) * | 2004-07-29 | 2010-05-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing of polymer-coated particles for chemical mechanical polishing |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7265055B2 (en) | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
WO2008117573A1 (ja) * | 2007-03-27 | 2008-10-02 | Jsr Corporation | 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 |
JP2008288398A (ja) * | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法 |
JP5327427B2 (ja) * | 2007-06-19 | 2013-10-30 | Jsr株式会社 | 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法 |
SG184772A1 (en) * | 2007-09-21 | 2012-10-30 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
JP5519507B2 (ja) * | 2007-09-21 | 2014-06-11 | キャボット マイクロエレクトロニクス コーポレイション | アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法 |
US20090090696A1 (en) * | 2007-10-08 | 2009-04-09 | Cabot Microelectronics Corporation | Slurries for polishing oxide and nitride with high removal rates |
DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
KR101256551B1 (ko) * | 2008-03-06 | 2013-04-19 | 주식회사 엘지화학 | Cmp 슬러리 및 이를 이용한 연마 방법 |
US7959695B2 (en) * | 2008-03-21 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Fixed abrasive articles utilizing coated abrasive particles |
EP2389417B1 (de) | 2009-01-20 | 2017-03-15 | Cabot Corporation | Zusammensetzungen mit silanmodifzierten metalloxiden |
US9187654B2 (en) | 2009-05-06 | 2015-11-17 | Carrie A. Feeney | Barrier coatings post-formation treated with multi-valent metal cations |
US7947125B1 (en) * | 2009-10-30 | 2011-05-24 | Canon Kabushiki Kaisha | Fine particle dispersion liquid containing tantalum oxide fine particles, tantalum oxide fine particle-resin composite, and method of producing fine particle dispersion liquid |
CN102101976A (zh) * | 2009-12-18 | 2011-06-22 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
US20130005219A1 (en) * | 2010-02-01 | 2013-01-03 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same |
US8639020B1 (en) | 2010-06-16 | 2014-01-28 | Intel Corporation | Method and system for modeling subjects from a depth map |
JP5695367B2 (ja) * | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP5940270B2 (ja) | 2010-12-09 | 2016-06-29 | 花王株式会社 | 研磨液組成物 |
TWI547552B (zh) * | 2012-03-19 | 2016-09-01 | 福吉米股份有限公司 | 硏光加工用硏磨材及使用此之基板的製造方法 |
JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
CN104582899B (zh) * | 2012-08-30 | 2018-11-09 | 日立化成株式会社 | 研磨剂、研磨剂套剂及基体的研磨方法 |
JP6054149B2 (ja) * | 2012-11-15 | 2016-12-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
SG11201505490RA (en) * | 2013-02-01 | 2015-08-28 | Fujimi Inc | Surface selective polishing compositions |
CN105189676B (zh) * | 2013-05-15 | 2021-03-23 | 巴斯夫欧洲公司 | 包含一种或多种选自n-乙烯基均聚物和n-乙烯基共聚物的聚合物的化学机械抛光组合物 |
WO2014199739A1 (ja) | 2013-06-12 | 2014-12-18 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
US9284472B2 (en) | 2013-08-09 | 2016-03-15 | Fujimi Incorporated | SiCN and SiN polishing slurries and polishing methods using the same |
CN103526207B (zh) * | 2013-09-23 | 2016-01-20 | 无锡阳工机械制造有限公司 | 一种除锈浆料 |
CN103484876B (zh) * | 2013-09-23 | 2016-01-13 | 无锡阳工机械制造有限公司 | 一种除锈浆料 |
CN103498160B (zh) * | 2013-09-23 | 2016-01-20 | 无锡阳工机械制造有限公司 | 一种抛光浆料 |
CN103498161B (zh) * | 2013-09-23 | 2016-01-20 | 无锡阳工机械制造有限公司 | 一种金属抛光防腐浆料 |
US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
CN103666282B (zh) * | 2013-12-13 | 2015-02-25 | 上海大学 | 用于计算机硬盘基片无磨粒抛光液组合物 |
CN104745087B (zh) * | 2013-12-25 | 2018-07-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液以及抛光方法 |
CN103756571A (zh) * | 2013-12-25 | 2014-04-30 | 上海华明高纳稀土新材料有限公司 | 稀土抛光粉及其制备方法 |
CN104745083B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液以及抛光方法 |
US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
WO2015146468A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP6350861B2 (ja) * | 2014-07-15 | 2018-07-04 | スピードファム株式会社 | コロイダルシリカ及びそれを含有する半導体ウエハ研磨用組成物 |
JP6517555B2 (ja) * | 2014-09-30 | 2019-05-22 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
KR102630261B1 (ko) | 2014-10-17 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
CN105802507A (zh) * | 2014-12-29 | 2016-07-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其应用 |
JP6028046B2 (ja) * | 2015-01-05 | 2016-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
US9758697B2 (en) | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
US10414947B2 (en) | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
US9505952B2 (en) | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
CN105369253B (zh) * | 2015-10-21 | 2017-11-17 | 上海铝通化学科技有限公司 | 防冲孔铝化学抛光添加剂及其应用 |
JP2017082061A (ja) * | 2015-10-26 | 2017-05-18 | 関東化學株式会社 | ゲル化剤 |
JP6940495B2 (ja) | 2015-10-30 | 2021-09-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
KR20170076191A (ko) * | 2015-12-24 | 2017-07-04 | 주식회사 케이씨텍 | 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
TWI631197B (zh) * | 2016-01-25 | 2018-08-01 | 卡博特微電子公司 | 含陽離子聚合物添加劑之拋光組合物 |
CN106010297B (zh) | 2016-06-20 | 2018-07-31 | 上海新安纳电子科技有限公司 | 一种氧化铝抛光液的制备方法 |
KR101943704B1 (ko) * | 2016-06-27 | 2019-01-29 | 삼성에스디아이 주식회사 | 금속막용 cmp 슬러리 조성물 및 연마 방법 |
JP6282708B2 (ja) * | 2016-10-07 | 2018-02-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、それを用いた研磨方法、及びその製造方法 |
WO2018229005A1 (en) * | 2017-06-15 | 2018-12-20 | Rhodia Operations | Cerium based particles |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7167042B2 (ja) * | 2017-09-29 | 2022-11-08 | 昭和電工マテリアルズ株式会社 | 研磨液、研磨液セット及び研磨方法 |
US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
CN108084888B (zh) * | 2018-01-18 | 2020-07-31 | 合肥京东方半导体有限公司 | 一种抛光液用基液及其制备方法 |
JP2019167404A (ja) * | 2018-03-22 | 2019-10-03 | Jsr株式会社 | 化学機械研磨用組成物及び回路基板の製造方法 |
WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
US20200172759A1 (en) * | 2018-12-04 | 2020-06-04 | Cabot Microelectronics Corporation | Composition and method for cobalt cmp |
US10781343B2 (en) | 2019-01-24 | 2020-09-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Acid polishing composition and method of polishing a substrate having enhanced defect inhibition |
TW202132527A (zh) * | 2019-12-12 | 2021-09-01 | 日商Jsr股份有限公司 | 化學機械研磨用組成物及研磨方法 |
CN112872916B (zh) * | 2020-12-28 | 2023-03-10 | 富联裕展科技(深圳)有限公司 | 抛光系统及抛光方法 |
KR102577164B1 (ko) * | 2020-12-29 | 2023-09-08 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 기판의 연마방법 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
KR20220149148A (ko) * | 2021-04-30 | 2022-11-08 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법 |
CN116200127A (zh) * | 2021-11-30 | 2023-06-02 | 安集微电子(上海)有限公司 | 一种制备纳米复合颗粒分散液的方法及纳米复合颗粒分散液、化学机械抛光液 |
CN114481286A (zh) * | 2021-12-28 | 2022-05-13 | 广东省科学院化工研究所 | 一种用于电解抛光的固体颗粒物 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4563483A (en) * | 1983-07-06 | 1986-01-07 | Creative Products Resource Ltd. | Concrete cleaning composition |
US4665116A (en) * | 1985-08-28 | 1987-05-12 | Turtle Wax, Inc. | Clear cleaner/polish composition |
US5226930A (en) * | 1988-06-03 | 1993-07-13 | Monsanto Japan, Ltd. | Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
JP3303544B2 (ja) * | 1994-07-27 | 2002-07-22 | ソニー株式会社 | 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法 |
US5645736A (en) * | 1995-12-29 | 1997-07-08 | Symbios Logic Inc. | Method for polishing a wafer |
KR970042941A (ko) * | 1995-12-29 | 1997-07-26 | 베일리 웨인 피 | 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물 |
US6602439B1 (en) * | 1997-02-24 | 2003-08-05 | Superior Micropowders, Llc | Chemical-mechanical planarization slurries and powders and methods for using same |
US6372648B1 (en) * | 1998-11-16 | 2002-04-16 | Texas Instruments Incorporated | Integrated circuit planarization method |
KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
WO2001004226A2 (en) | 1999-07-07 | 2001-01-18 | Cabot Microelectronics Corporation | Cmp composition containing silane modified abrasive particles |
EP1104778B1 (de) | 1999-11-22 | 2004-11-03 | JSR Corporation | Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren |
JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Jsr株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
WO2001057919A1 (fr) * | 2000-02-04 | 2001-08-09 | Showa Denko K. K. | Composite de polissage destine a etre utilise dans la fabrication des circuits lsi, et procede de fabrication de circuits lsi |
US6656241B1 (en) * | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
-
2003
- 2003-04-21 US US10/419,580 patent/US7044836B2/en not_active Expired - Lifetime
-
2004
- 2004-04-19 CN CN201010578445XA patent/CN102127370A/zh active Pending
- 2004-04-19 CN CNA2004800173753A patent/CN1809620A/zh active Pending
- 2004-04-19 WO PCT/US2004/012133 patent/WO2004094547A2/en active Application Filing
- 2004-04-19 DE DE602004027901T patent/DE602004027901D1/de not_active Expired - Lifetime
- 2004-04-19 EP EP04760040A patent/EP1620518B1/de not_active Expired - Lifetime
- 2004-04-19 KR KR1020057020038A patent/KR101195289B1/ko active IP Right Grant
- 2004-04-19 JP JP2006513149A patent/JP4782673B2/ja not_active Expired - Fee Related
- 2004-04-19 AT AT04760040T patent/ATE472582T1/de not_active IP Right Cessation
- 2004-04-21 TW TW093111152A patent/TWI268954B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1620518A2 (de) | 2006-02-01 |
US7044836B2 (en) | 2006-05-16 |
KR101195289B1 (ko) | 2012-10-26 |
WO2004094547A3 (en) | 2004-12-16 |
JP2006524918A (ja) | 2006-11-02 |
TW200427826A (en) | 2004-12-16 |
ATE472582T1 (de) | 2010-07-15 |
EP1620518B1 (de) | 2010-06-30 |
CN102127370A (zh) | 2011-07-20 |
US20040209555A1 (en) | 2004-10-21 |
JP4782673B2 (ja) | 2011-09-28 |
KR20060007028A (ko) | 2006-01-23 |
WO2004094547A2 (en) | 2004-11-04 |
CN1809620A (zh) | 2006-07-26 |
TWI268954B (en) | 2006-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602004027901D1 (de) | Belegte metalloxidteilchen für cmp | |
WO2004072199A3 (en) | Mixed-abrasive polishing composition and method for using the same | |
ATE307859T1 (de) | Verfahren zum polieren oder planarisieren eines substrats | |
WO2006044417B1 (en) | Cmp composition with a polymer additive for polishing noble metals | |
TWI260342B (en) | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication | |
DE60307111D1 (de) | Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten | |
CN1209429C (zh) | 含硅烷改性研磨颗粒的化学机械抛光(cmp)组合物 | |
ATE459698T1 (de) | Ummantelte schleifkörner, verfahren zu ihrer herstellung sowie ihre verwendung zur herstellung von schleifmitteln | |
Kim et al. | Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size | |
TW200630471A (en) | CMP composition containing surface-modified abrasive particles | |
CN109848821A (zh) | 一种镍合金的绿色环保化学机械抛光方法 | |
CN102190962A (zh) | 抛光组合物及利用该组合物的抛光方法 | |
JPH04226862A (ja) | 砥粒物品 | |
DE60330971D1 (de) | Halbleiterschleif prozess zu seiner herstellung und polierverfahren | |
KR20170073628A (ko) | 코발트 파임 제어제 | |
ATE258577T1 (de) | Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen | |
TW200642978A (en) | Slurry composition and method for polishing organic polymer-based ophthalmic substrates | |
JP2017538285A (ja) | コバルト研磨促進剤 | |
CN1951636A (zh) | 涂附磨具及其生产方法 | |
WO2006113447A3 (en) | Superabrasive coatings | |
WO2003082519B1 (en) | Conditioner and conditioning methods for smooth pads | |
CN106041741B (zh) | 一种含有多孔结构的cmp抛光垫修整器 | |
CN106553119A (zh) | 抛光半导体衬底的方法 | |
KR20180065909A (ko) | 비트리파이드 본드 지석 | |
EP1344496A3 (de) | Vorrichtung zum Entfernen von Hornhaut und Verfahren zur seiner Herstellung |