JP2017538285A - コバルト研磨促進剤 - Google Patents
コバルト研磨促進剤 Download PDFInfo
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- JP2017538285A JP2017538285A JP2017519258A JP2017519258A JP2017538285A JP 2017538285 A JP2017538285 A JP 2017538285A JP 2017519258 A JP2017519258 A JP 2017519258A JP 2017519258 A JP2017519258 A JP 2017519258A JP 2017538285 A JP2017538285 A JP 2017538285A
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- polishing composition
- cobalt
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- alkyl
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- 238000005498 polishing Methods 0.000 title claims abstract description 200
- 239000010941 cobalt Substances 0.000 title claims abstract description 128
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 128
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000000203 mixture Substances 0.000 claims abstract description 157
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000002245 particle Substances 0.000 claims abstract description 56
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 50
- 230000007797 corrosion Effects 0.000 claims abstract description 44
- 238000005260 corrosion Methods 0.000 claims abstract description 44
- 239000003112 inhibitor Substances 0.000 claims abstract description 44
- 239000000126 substance Substances 0.000 claims abstract description 29
- 239000007800 oxidant agent Substances 0.000 claims abstract description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000001413 amino acids Chemical class 0.000 claims abstract description 15
- 125000004181 carboxyalkyl group Chemical group 0.000 claims abstract description 15
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 11
- 125000005097 aminocarbonylalkyl group Chemical group 0.000 claims abstract description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 125000000129 anionic group Chemical group 0.000 claims description 14
- 125000001931 aliphatic group Chemical group 0.000 claims description 13
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 12
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 claims description 10
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical group OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 10
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 claims description 5
- 239000007998 bicine buffer Substances 0.000 claims description 5
- AWEZYTUWDZADKR-UHFFFAOYSA-N 2-[(2-amino-2-oxoethyl)azaniumyl]acetate Chemical compound NC(=O)CNCC(O)=O AWEZYTUWDZADKR-UHFFFAOYSA-N 0.000 claims description 4
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 4
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 4
- 239000004472 Lysine Substances 0.000 claims description 4
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 4
- 229940081066 picolinic acid Drugs 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- 125000000547 substituted alkyl group Chemical class 0.000 claims description 3
- SFRDXVJWXWOTEW-UHFFFAOYSA-N 2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)CO SFRDXVJWXWOTEW-UHFFFAOYSA-N 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 239000000377 silicon dioxide Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 14
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 10
- 125000003342 alkenyl group Chemical group 0.000 description 10
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical class C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000003139 biocide Substances 0.000 description 6
- -1 carbide Chemical class 0.000 description 6
- 239000004471 Glycine Substances 0.000 description 5
- 230000003115 biocidal effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000003002 pH adjusting agent Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 125000004415 heterocyclylalkyl group Chemical group 0.000 description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- JKMHFZQWWAIEOD-UHFFFAOYSA-N 2-[4-(2-hydroxyethyl)piperazin-1-yl]ethanesulfonic acid Chemical compound OCC[NH+]1CCN(CCS([O-])(=O)=O)CC1 JKMHFZQWWAIEOD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 125000006538 C11 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006539 C12 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 239000007995 HEPES buffer Substances 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- 125000002648 azanetriyl group Chemical group *N(*)* 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OWMVSZAMULFTJU-UHFFFAOYSA-N bis-tris Chemical compound OCCN(CCO)C(CO)(CO)CO OWMVSZAMULFTJU-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011540 hip replacement Methods 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 238000013150 knee replacement Methods 0.000 description 1
- 229940071145 lauroyl sarcosinate Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000000399 orthopedic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000582 polyisocyanurate Polymers 0.000 description 1
- 239000011495 polyisocyanurate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229940071089 sarcosinate Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002455 scale inhibitor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本特許出願は、2014年10月21日に出願された米国仮特許出願第62/066,484号、及び2015年7月28日に出願された米国仮特許出願第62/197,992号の利益を主張し、これらの出願は参照により援用される。
CoO+H2O→Co(OH)2→Co2++2OH−
Co2++2OH−+2RNH→Co(RN)2+2H2O
実施形態1 化学機械研磨組成物であって、
(a)研磨粒子と、
(b)以下の式NR1R2R3を有する化合物から選択されるコバルト促進剤であって、式中、R1、R2、及びR3が、水素、カルボキシアルキル、置換カルボキシアルキル、ヒドロキシアルキル、置換ヒドロキシアルキル、及びアミノカルボニルアルキルから独立して選択され、R1、R2、及びR3のうちの何れもが、水素;ジカルボキシ複素環;ヘテロシクリルアルキル−α−アミノ酸;N−(アミドアルキル)アミノ酸;非置換複素環;アルキル置換複素環;置換アルキル−置換複素環;N−アミノアルキル−α−アミノ酸;及びこれらの組み合わせではないか、又はR1、R2、及びR3のうちの1つが、水素;ジカルボキシ複素環;ヘテロシクリルアルキル−α−アミノ酸;N−(アミドアルキル)アミノ酸;非置換複素環;アルキル置換複素環;置換アルキル−置換複素環;N−アミノアルキル−α−アミノ酸;及びこれらの組み合わせである、前記コバルト促進剤と、
(c)コバルト腐食抑制剤と、
(d)コバルトを酸化させる酸化剤と、
(e)水と、を含み、
前記研磨組成物が、約3〜約8.5のpHを有する、前記化学機械研磨組成物。
実施形態2 前記研磨組成物が、約0.1重量%〜約2重量%の研磨粒子を含む、実施形態1に記載の研磨組成物。
実施形態3 前記コバルト促進剤が、イミノ二酢酸、ピコリン酸、ジピコリン酸、ビシン、[(2−アミノ−2−オキソエチル)アミノ]酢酸、リジン、イミダゾール、ヒスチジン、2−[ビス(2−ヒドロキシエチル)アミノ]−2−(ヒドロキシメチル)−1,3−プロパンジオール、及びこれらの組み合わせから選択される、実施形態1又は実施形態2に記載の研磨組成物。
実施形態4 前記コバルト促進剤が、約5mM〜約100mMの濃度で前記研磨組成物中に存在する、実施形態1から実施形態3の何れか1つに記載の研磨組成物。
実施形態5 前記コバルト腐食抑制剤が、アニオン性頭部基と、C8〜C14の脂肪族末端基とを含む、実施形態1から実施形態4の何れか1つに記載の研磨組成物。
実施形態6 前記コバルト腐食抑制剤が、以下の式:RCON(CH3)COOHを有し、式中、RはC8〜C13の脂肪族基である、実施形態1に記載の研磨組成物。
実施形態7 前記研磨組成物が、約10ppm〜約1000ppmの前記コバルト腐食抑制剤を含む、実施形態1から実施形態6の何れか1つに記載の研磨組成物。
実施形態8 前記酸化剤が過酸化水素である、実施形態1から実施形態7の何れか1つに記載の研磨組成物。
実施形態9 前記研磨組成物が約7〜約8のpHを有する、実施形態1から実施形態8の何れか1つに記載の研磨組成物。
実施形態10 基板を化学的機械的研磨する方法であって、
(i)基板を研磨パッド及び実施形態1から実施形態9の何れか1つに記載の化学機械研磨組成物と接触させることと、
(ii)前記研磨パッド及び前記化学機械研磨組成物を前記基板に対して動かすことと、
(iii)前記基板を研磨するために、前記基板の少なくとも一部を研削することと、を含む、前記方法。
実施形態11 前記基板がコバルトを含み、及び前記コバルトの少なくとも一部が、前記基板を研磨するために研削される、実施形態10に記載の方法。
実施形態12 前記基板が半導体デバイスを含む、実施形態10又は実施形態11に記載の方法。
本実施例は、コバルト促進剤を、コバルト腐食抑制剤なしで含む研磨組成物によって示されるコバルト除去速度を明示する。コバルトのブランケット層を含む個々の基板を、研磨組成物1A〜1Vを用いて研磨した。研磨組成物1A〜1Sは、本発明の研磨組成物である。研磨組成物1T〜1Vは、比較用の研磨組成物である。全ての研磨組成物は、70nmの平均粒子サイズを有する湿式法シリカ0.5重量%(シリカは扶桑化学工業株式会社(日本)から入手)と、pH5〜7の過酸化水素1重量%と、約40mM濃度の促進剤とを含有した。表1に促進剤について記載した。研磨後に、コバルト除去速度を測定したが、その結果を表1に示す。相対速度は、グリシンを含有する研磨組成物1Rで観測された除去速度を基準として計算している。
本実施例は、コバルト促進剤を、コバルト腐食抑制剤と共に及びコバルト腐食抑制剤なしで含む、研磨組成物によって示されるコバルト除去速度を明示する。
本実施例は、本発明の実施形態による、コバルト促進剤としてイミノ二酢酸を含む研磨組成物によって示されるコバルト除去速度を明示する。
Claims (20)
- 化学機械研磨組成物であって、
(a)研磨粒子と、
(b)以下の式NR1R2R3を有する化合物から選択されるコバルト促進剤であって、式中、R1、R2、及びR3が、水素、カルボキシアルキル、置換カルボキシアルキル、ヒドロキシアルキル、置換ヒドロキシアルキル、及びアミノカルボニルアルキルから独立して選択され、R1、R2、及びR3のうちの何れもが、水素;ジカルボキシ複素環;ヘテロシクリルアルキル−α−アミノ酸;N−(アミドアルキル)アミノ酸;非置換複素環;アルキル置換複素環;置換アルキル−置換複素環;N−アミノアルキル−α−アミノ酸;及びこれらの組み合わせではないか、又はR1、R2、及びR3のうちの1つが、水素;ジカルボキシ複素環;ヘテロシクリルアルキル−α−アミノ酸;N−(アミドアルキル)アミノ酸;非置換複素環;アルキル置換複素環;置換アルキル−置換複素環;N−アミノアルキル−α−アミノ酸;及びこれらの組み合わせである、前記コバルト促進剤と、
(c)コバルト腐食抑制剤と、
(d)コバルトを酸化させる酸化剤と、
(e)水と、を含み、
前記研磨組成物が、約3〜約8.5のpHを有する、前記化学機械研磨組成物。 - 前記研磨組成物が、約0.1重量%〜約2重量%の研磨粒子を含む、請求項1に記載の研磨組成物。
- 前記コバルト促進剤が、イミノ二酢酸、ピコリン酸、ジピコリン酸、ビシン、[(2−アミノ−2−オキソエチル)アミノ]酢酸、リジン、イミダゾール、ヒスチジン、2−[ビス(2−ヒドロキシエチル)アミノ]−2−(ヒドロキシメチル)−1,3−プロパンジオール、及びこれらの組み合わせから選択される、請求項1又は請求項2に記載の研磨組成物。
- 前記コバルト促進剤が、約5mM〜約100mMの濃度で前記研磨組成物中に存在する、請求項1から請求項3の何れか1項に記載の研磨組成物。
- 前記コバルト腐食抑制剤が、アニオン性頭部基と、C8〜C14の脂肪族末端基とを含む、請求項1から請求項4の何れか1項に記載の研磨組成物。
- 前記コバルト腐食抑制剤が、以下の式:RCON(CH3)COOHを有し、式中、RはC8〜C13の脂肪族基である、請求項1に記載の研磨組成物。
- 前記研磨組成物が、約10ppm〜約1000ppmの前記コバルト腐食抑制剤を含む、請求項1から請求項6の何れか1項に記載の研磨組成物。
- 前記酸化剤が過酸化水素である、請求項1から請求項7の何れか1項に記載の研磨組成物。
- 前記研磨組成物が約7〜約8のpHを有する、請求項1から請求項8の何れか1項に記載の研磨組成物。
- 基板を化学的機械的研磨する方法であって、
(i)研磨パッド、及び、
(a)研磨粒子と、
(b)以下の式NR1R2R3を有する化合物から選択されるコバルト促進剤であって、式中、R1、R2、及びR3が、水素、カルボキシアルキル、置換カルボキシアルキル、ヒドロキシアルキル、置換ヒドロキシアルキル、及びアミノカルボニルアルキルから独立して選択され、R1、R2、及びR3のうちの何れもが、水素;ジカルボキシ複素環;ヘテロシクリルアルキル−α−アミノ酸;N−(アミドアルキル)アミノ酸;非置換複素環;アルキル置換複素環;置換アルキル−置換複素環;N−アミノアルキル−α−アミノ酸ではないか、又はR1、R2、及びR3のうちの1つが、水素;ジカルボキシ複素環;ヘテロシクリルアルキル−α−アミノ酸;N−(アミドアルキル)アミノ酸;非置換複素環;アルキル置換複素環;置換アルキル−置換複素環;N−アミノアルキル−α−アミノ酸である、前記コバルト促進剤と、
(c)コバルト腐食抑制剤と、その組み合わせと、
(d)コバルトを酸化させる酸化剤と、
(e)水と、を含む、化学機械研磨組成物であって、
前記研磨組成物が、約3〜約8.5のpHを有する、前記化学機械研磨組成物を、基板と接触させることと、
(ii)前記研磨パッド及び前記化学機械研磨組成物を前記基板に対して動かすことと、
(iii)前記基板を研磨するために、前記基板の少なくとも一部を研削することと、を含む、前記方法。 - 前記研磨組成物が、約0.1重量%〜約2重量%の研磨粒子を含む、請求項10に記載の方法。
- 前記コバルト促進剤が、イミノ二酢酸、ピコリン酸、ジピコリン酸、ビシン、[(2−アミノ−2−オキソエチル)アミノ]酢酸、リジン、イミダゾール、ヒスチジン、2−[ビス(2−ヒドロキシエチル)アミノ]−2−(ヒドロキシメチル)−1,3−プロパンジオール、及びこれらの組み合わせから選択される、請求項10又は請求項11に記載の方法。
- 前記コバルト促進剤が、約5mM〜約100mMの濃度で前記研磨組成物中に存在する、請求項10から請求項12の何れか1項に記載の方法。
- 前記コバルト腐食抑制剤が、アニオン性頭部基と、C8〜C14の脂肪族末端基とを含む、請求項10から請求項13の何れか1項に記載の方法。
- 前記コバルト腐食抑制剤が、以下の式:RCON(CH3)COOHを有し、式中、RはC8〜C13の脂肪族基である、請求項10に記載の方法。
- 前記研磨組成物が、約10ppm〜約1000ppmの前記コバルト腐食抑制剤を含む、請求項10から請求項15の何れか1項に記載の方法。
- 前記酸化剤が過酸化水素である、請求項10から請求項16の何れか1項に記載の方法。
- 前記研磨組成物が約7〜約8のpHを有する、請求項10から請求項17の何れか1項に記載の方法。
- 前記基板が、コバルトを含み、及び前記コバルトの少なくとも一部が、前記基板を研磨するために研削される、請求項10から請求項18の何れか1項に記載の方法。
- 前記基板が半導体デバイスを含む、請求項10から請求項19の何れか1項に記載の方法。
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CN107148457A (zh) | 2017-09-08 |
JP6646051B2 (ja) | 2020-02-14 |
US20160115353A1 (en) | 2016-04-28 |
CN107148457B (zh) | 2019-07-09 |
KR20170076719A (ko) | 2017-07-04 |
US9688885B2 (en) | 2017-06-27 |
WO2016065060A1 (en) | 2016-04-28 |
US20170260421A1 (en) | 2017-09-14 |
US9850403B2 (en) | 2017-12-26 |
EP3210238B1 (en) | 2019-06-26 |
EP3210238A4 (en) | 2018-04-18 |
EP3210238A1 (en) | 2017-08-30 |
KR102538575B1 (ko) | 2023-06-01 |
TW201634652A (zh) | 2016-10-01 |
TWI580767B (zh) | 2017-05-01 |
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