JP6940495B2 - 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法 - Google Patents
所望のゼータ電位を有する研磨用物品を形成するための装置及び方法 Download PDFInfo
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- JP6940495B2 JP6940495B2 JP2018521856A JP2018521856A JP6940495B2 JP 6940495 B2 JP6940495 B2 JP 6940495B2 JP 2018521856 A JP2018521856 A JP 2018521856A JP 2018521856 A JP2018521856 A JP 2018521856A JP 6940495 B2 JP6940495 B2 JP 6940495B2
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- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 description 1
- JTHZUSWLNCPZLX-UHFFFAOYSA-N 6-fluoro-3-methyl-2h-indazole Chemical compound FC1=CC=C2C(C)=NNC2=C1 JTHZUSWLNCPZLX-UHFFFAOYSA-N 0.000 description 1
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical compound CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 1
- COCLLEMEIJQBAG-UHFFFAOYSA-N 8-methylnonyl 2-methylprop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C(C)=C COCLLEMEIJQBAG-UHFFFAOYSA-N 0.000 description 1
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- 244000043261 Hevea brasiliensis Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
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- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
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- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 235000019270 ammonium chloride Nutrition 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
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- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
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- YIOJGTBNHQAVBO-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)azanium Chemical compound C=CC[N+](C)(C)CC=C YIOJGTBNHQAVBO-UHFFFAOYSA-N 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
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- XWNVSPGTJSGNPU-UHFFFAOYSA-N ethyl 4-chloro-1h-indole-2-carboxylate Chemical compound C1=CC=C2NC(C(=O)OCC)=CC2=C1Cl XWNVSPGTJSGNPU-UHFFFAOYSA-N 0.000 description 1
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- IHBKAGRPNRKYAO-UHFFFAOYSA-M methyl sulfate;trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium Chemical compound COS([O-])(=O)=O.CC(=C)C(=O)OCC[N+](C)(C)C IHBKAGRPNRKYAO-UHFFFAOYSA-M 0.000 description 1
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- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- HMZGPNHSPWNGEP-UHFFFAOYSA-N octadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C(C)=C HMZGPNHSPWNGEP-UHFFFAOYSA-N 0.000 description 1
- FSAJWMJJORKPKS-UHFFFAOYSA-N octadecyl prop-2-enoate Chemical class CCCCCCCCCCCCCCCCCCOC(=O)C=C FSAJWMJJORKPKS-UHFFFAOYSA-N 0.000 description 1
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- YNXCGLKMOXLBOD-UHFFFAOYSA-N oxolan-2-ylmethyl prop-2-enoate Chemical class C=CC(=O)OCC1CCCO1 YNXCGLKMOXLBOD-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- HPAFOABSQZMTHE-UHFFFAOYSA-N phenyl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)C1=CC=CC=C1 HPAFOABSQZMTHE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0045—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by stacking sheets of abrasive material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Description
x=1−[(AC=C/AC=O)x/(AC=C/AC=O)0]
1700cm−1におけるピーク値は、FT−IR分光法を用いて得られる。AC=C/AC=O比は、硬化された液滴中のC=C結合のC=O結合に対する相対的な比率を表しており、したがって、(AC=C/AC=O)0は、液滴中の当初のAC=CのAC=Oに対する比率を意味する。一方で、(AC=C/AC=O)xは、液滴が硬化された後の硬化された基板の表面におけるAC=CのAC=Oに対する比率を意味する。ある実施形態では、ある層が最初に部分的に硬化された量は、分注された液滴中の材料の約70%以上であってよい。ある構成では、最初の層の形成ステップ中に、分注された液滴内の材料を、部分的に、約70〜80%のレベルまで、硬化することが望ましくあり得る。
本明細書に記載の研磨用物品は、少なくとも1つのプレポリマー組成物から形成されていてよい。プレポリマー組成物は、インクジェット印刷可能なプレポリマー組成物であってよい。インクジェット印刷可能な組成物は、(1)1つ以上のオリゴマー成分、(2)1つ以上のモノマー成分、(3)1つ以上のゼータ電位調整剤成分、(4)光開始剤成分、(5)無機粒子、有機粒子またはその両方、及び(6)さらなる添加物、のうちの少なくとも1つを含んでいてよい。プレポリマーのインクまたは組成物は、堆積された後に、硬化剤または化学開始剤を使用するかまたは使用しない、放射エネルギーまたは熱エネルギーへの曝露または接触といった、任意の数の手段を用いて処理されてよい。重合反応を開始するため、例えば、紫外線放射(UV)、ガンマ線、X線、加速電子、及びイオンビームが使用されてよい。本開示の目的のためには、貫通硬化剤もしくは酸素抑制剤などの、増感剤、開始剤、及び/または硬化剤といった、硬化の方法または重合を促進する添加剤の使用は限定されない。
以下の非限定的な実施例は、本明細書に記載の実施例をさらに説明するために提供されている。しかし、これらの実施例は、本明細書に記載する実施形態の全てを網羅することを意図しておらず、またその範囲を限定することを意図していない。特定の材料およびその量は、これらの実施例で記載される他の条件および詳細と同様に、本明細書に記載された実装態様を制限するために使用されるものではない。
Claims (15)
- 第1のポリマー材料から形成され、第1のゼータ電位を有する1つ以上の露出した第1の領域と、
第2のポリマー材料から形成され、第1のゼータ電位とは異なる第2のゼータ電位を有する1つ以上の露出した第2の領域と、
を備える研磨用物品であって、
前記1つ以上の露出した第1の領域及び前記1つ以上の露出した第2の領域は、前記研磨用物品の底面から前記研磨用物品の頂面まで上昇するゼータ電位の勾配を形成するように配置されている、研磨用物品。 - 第1のポリマー材料から形成され、第1のゼータ電位を有する1つ以上の露出した第1の領域と、
第2のポリマー材料から形成され、第1のゼータ電位とは異なる第2のゼータ電位を有する1つ以上の露出した第2の領域と、
を備える研磨用物品であって、
前記1つ以上の露出した第1の領域及び前記1つ以上の露出した第2の領域は、前記研磨用物品の頂面から前記研磨用物品の底面まで上昇するゼータ電位の勾配を形成するように配置されている、研磨用物品。 - 中性溶液を使って測定された前記第1のゼータ電位は、−70mV以上0mV未満であり、中性溶液を使って測定された前記第2のゼータ電位は、0mV以上50mV未満である、請求項1または2に記載の研磨用物品。
- 中性溶液を使って測定された前記第1のゼータ電位は、0mV以上50mV未満であり、中性溶液を使って測定された前記第2のゼータ電位は、−70mV以上0mV未満である、請求項1または2に記載の研磨用物品。
- 前記1つ以上の露出した第1の領域は1つ以上の第1の特徴部を含み、前記1つ以上の露出した第2の領域は1つ以上の第2の特徴部を含む、請求項1または2に記載の研磨用物品。
- 前記1つ以上の第1の特徴部に埋め込まれた研磨材粒子をさらに含む、請求項5に記載の研磨用物品。
- 前記第1のゼータ電位及び前記第2のゼータ電位とは異なる第3のゼータ電位を有する第3のポリマー材料から形成された1つ以上の第3の領域をさらに備える、請求項1または2に記載の研磨用物品。
- 前記第1のポリマー材料は、カチオン系モノマー、アニオン系モノマー、ノニオン系モノマー、またはその組み合わせから選択された第1のゼータ電位調整剤を含む第1の組成物から形成される、請求項1または2に記載の研磨用物品。
- 前記第2のポリマー材料は、第2の組成物から形成される、請求項8に記載の研磨用物品。
- 第1のゼータ電位を有する第1のポリマー材料を含む1つ以上の露出した第1の領域と、前記第1のゼータ電位とは異なる第2のゼータ電位を有する第2のポリマー材料を含む1つ以上の露出した第2の領域とを含む、第1の溝付きの表面、
前記第1の溝付きの表面と反対側の第2の平坦な表面、及び、
前記第1の溝付きの表面から前記第2の平坦な表面に向かって延びるゼータ電位の勾配であって、前記第1のゼータ電位と前記第2のゼータ電位とを含む、ゼータ電位勾配
を有する、複合研磨パッド本体を備える、研磨用物品。 - 前記ゼータ電位の勾配は、前記第1の溝付きの表面に向かってより電気陽性になっている、請求項10に記載の研磨用物品。
- 前記ゼータ電位の勾配は、前記第1の溝付きの表面に向かってより電気陰性になっている、請求項10に記載の研磨用物品。
- 前記第1の溝付きの表面が、
前記第1のポリマー材料から形成された複数の研磨用特徴部と、
前記第2のポリマー材料から形成された1つ以上のベース特徴部と
を備え、前記1つ以上のベース特徴部が共同して前記複数の研磨用特徴部を取り囲む、請求項10に記載の研磨用物品。 - 中性溶液を使って測定される前記ゼータ電位の勾配は、約−70mVから約+50mVの範囲内で変動する、請求項10に記載の研磨用物品。
- 研磨剤粒子をさらに含む、請求項10に記載の研磨用物品。
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