CN1897226A - 一种化学机械抛光机 - Google Patents
一种化学机械抛光机 Download PDFInfo
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Abstract
本发明公开了一种化学机械抛光机,包括含有研磨垫及研磨液注入口的研磨头,还包括放置硅片的平台,所述的研磨头中包含多个研磨垫及研磨液注入口。其研磨头中的各个研磨垫的压力和转速以及旋转方向都可以单独控制,通过调节小研磨垫分布,转速和压力,使硅片径向研磨速率分布的控制变得很容易,增加硅片表面抛光区域的均匀性。研磨液通过研磨头上的注入口,直接注入到硅片表面,并且可以根据需要从一个研磨液注入口单独注入研磨液,也可以从多个研磨液注入口同时注入研磨液,可大大减少研磨液用量,降低化学机械抛光工艺成本。
Description
技术领域
本发明涉及半导体制造领域,尤其涉及一种化学机械抛光机。
背景技术
化学机械抛光工艺能提供光滑高质的硅片表面,而且被认为是唯一能提供硅片全局和局部平坦化的工艺技术。化学机械抛光工艺已被广泛用于层间介质,、金属层,如钨栓塞、铜连线,浅沟槽隔离的去除和平整,成为半导体制造工艺中发展最快的领域之一。
如图1所示,在传统的化学机械抛光工艺过成中,研磨头携带着硅片向下贴压在研磨垫上,含有化学反应物和研磨颗粒的研磨液也被同时滴加在研磨垫上。硅片和研磨垫之间通过自身旋转及硅片在研磨垫上的水平方向运动,利用硅片表面淀积层与研磨垫和研磨颗粒之间的机械作用,及与研磨液之间的化学作用,达到淀积层的去除和平坦化。
但是,在使用中发现,硅片与研磨垫之间研磨液的配送均匀性和经研磨头向硅片所施压力沿硅片径向的分布均匀性很难控制。因此,虽然经过化学机械抛光处理过的硅片表面具有较高的平坦度,但硅片经过抛光后,其表面淀积层的膜厚均匀性一直难以调控。这种控制将随着硅片自身尺寸的不断大型化而变得愈发困难。
另外,由于研磨液是从研磨垫的中心滴加并通过离心力向研磨垫四周输送,实际被利用的研磨液只占全部消耗的研磨液的25%以下。大部份研磨液都被直接浪费掉。
发明内容
本发明所要解决的技术问题是提供一种化学机械抛光机,可以控制硅片径向研磨速率的分布,增加硅片表面抛光区域膜厚的均匀性,并提高研磨液的使用效率,节约成本。
为解决上述技术问题,本发明一种化学机械抛光机,包括含有研磨垫及研磨液注入口的研磨头,它还包括位于研磨头下方放置硅片的平台,所述的研磨头中包含多个研磨垫及研磨液注入口。
作为一种优选技术方案,本发明的一种化学机械抛光机,最好其中所述各个研磨垫施加在硅片上的压力和各个研磨垫的转速以及各个研磨垫的旋转方向都单独控制。
作为另一种优选技术方案,本发明的一种化学机械抛光机,最好其中所述的研磨液注入口,在通过其将研磨液注入到硅片表面时,通过单个研磨液注入口注入研磨液,或者通过多个研磨液注入口同时注入研磨液。
与已有技术中的化学机械抛光机相比,本发明一种化学机械抛光机,其研磨头中的各个研磨垫施加在硅片的压力和转速以及旋转方向都可以单独控制,通过调节小研磨垫的分布、转速和施加在硅片的压力,使硅片径向研磨速率分布的控制变得很容易,增加硅片表面抛光区域的均匀性。研磨液通过研磨头上的注入口,直接注入到硅片表面,并且可以根据需要从一个研磨液注入口单独注入研磨液,也可以从多个研磨液注入口同时注入研磨液,可大大减少研磨液用量,降低化学机械抛光工艺成本。并且本发明研磨头在尺寸上和硅片相当,可以减小化学机械抛光机的占地面积。
附图说明
下面结合附图和实施例对本发明作进一步描述:
图1为已有技术的化学机械抛光机结构示意图;
图2为本发明一种化学机械抛光机结构示意图。
具体实施方式
如图2所示,本发明涉及的化学机械抛光机,由一个可自旋并且位于研磨头下方放置硅片的平台,和一个内置多个研磨垫及研磨液注入口的研磨头构成。放置硅片的平台为圆形,并可以圆心为轴心自转;所述各个研磨垫施向硅片的压力和各个研磨垫的转速以及各个研磨垫的旋转方向都可以单独控制;研磨垫可以为圆形、或多边形,并可以研磨垫的几何中心为轴心自转。
在化学机械抛光过程中,研磨头携研磨垫由上向下贴压在硅片(硅片被抛光的面朝上)上,研磨液经研磨头内的注入口直接注入到硅片表面。研磨液可以从单个研磨液注入口单独注入到硅片表面,也可以从多个研磨液注入口同时注入到硅片表面。硅片作以圆心为轴心的自转,各个小研磨垫以其几何中心为轴心自转,研磨头还携各研磨垫作水平方向往返运动。硅片表面淀积层与研磨垫和研磨颗粒之间产生机械作用,并与研磨液之间产生化学作用,从而达到淀积层的去除和平坦化。
图2所示的研磨头中共有13个小研磨垫分布在三个区域:中心1个,内圈4个,外圈8个。12个研磨液注入口分布在两个区域:内圈4个,外圈8个。各区域的研磨垫的转速、旋转方向以及对硅片的压力可被独立控制。研磨垫所在各区域对硅片表面对应的环形(或圆形)部分进行研磨,各区域通过研磨头水平方向往返运动而重叠,从而覆盖整个硅片表面。
实际应用中,研磨头内的小研磨垫和研磨液注入口的数量和分布均可随工艺需要进行优化和改进。
并且本发明化学机械抛光机的应用范围包括任何尺寸的硅片制造设备,如6、8、12、18英寸、以及更加大尺寸的硅片制造设备。
Claims (7)
1.一种化学机械抛光机,包括含有研磨垫及研磨液注入口的研磨头,其特征在于,它还包括位于研磨头下方放置硅片的平台,所述的研磨头中包含多个研磨垫及研磨液注入口。
2.如权利要求1所述的一种化学机械抛光机,其特征在于,所述放置硅片的平台为可以圆心为轴心自转的圆形平台。
3.如权利要求1所述的一种化学机械抛光机,其特征在于,所述的研磨头为可连同各研磨垫作水平方向往返运动的研磨头。
4.如权利要求1所述的一种化学机械抛光机,其特征在于,所述的多个研磨垫及研磨液注入口以内置方式包含在所述研磨头中。
5.如权利要求4所述的一种化学机械抛光机,其特征在于,所述各个研磨垫施加在硅片上的压力和各个研磨垫的转速以及各个研磨垫的旋转方向都单独控制。
6.如权利要求1所述的一种化学机械抛光机,其特征在于,其中所述的研磨液注入口,在通过其将研磨液注入到硅片表面时,通过单个研磨液注入口注入研磨液,或者通过多个研磨液注入口同时注入研磨液。
7.如权利要求1至6中任一权利要求所述的一种化学机械抛光机,其特征在于,所述研磨垫为可以研磨垫的几何中心为轴心自转的圆形、或多边形。
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CN101817160A (zh) * | 2010-04-13 | 2010-09-01 | 王敬 | 硅锭的抛光方法、系统及抛光板 |
CN101920476B (zh) * | 2009-06-11 | 2011-12-14 | 上海华虹Nec电子有限公司 | 化学机械抛光设备及其研磨液输送方法 |
CN101879700B (zh) * | 2009-05-07 | 2013-03-27 | 台湾积体电路制造股份有限公司 | 化学机械研磨元件、晶圆的研磨方法及晶圆研磨系统 |
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- 2005-07-11 CN CNA2005100276597A patent/CN1897226A/zh active Pending
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