CN1851896A - 一种静电卡盘 - Google Patents

一种静电卡盘 Download PDF

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Publication number
CN1851896A
CN1851896A CN 200510126303 CN200510126303A CN1851896A CN 1851896 A CN1851896 A CN 1851896A CN 200510126303 CN200510126303 CN 200510126303 CN 200510126303 A CN200510126303 A CN 200510126303A CN 1851896 A CN1851896 A CN 1851896A
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electrostatic chuck
pedestal
insulating barrier
bonding agent
diameter
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吉美爱
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Priority to CN 200510126303 priority Critical patent/CN1851896A/zh
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Abstract

本发明涉及一种半导体加工用的静电卡盘,包括基座和绝缘层,绝缘层用粘接剂粘接在基座上,绝缘层下端部设有圆形凹槽,凹槽的直径与基座连接面直径相同,深度为一层粘接剂所需的尺度,粘接剂涂于所述圆形凹槽内,绝缘层下端粘接的基座表面直径比绝缘层直径小。本发明的静电卡盘粘接剂避开了等离子体可到达的范围,被牢牢地锁在了绝缘层和基座上,不会受到等离子体的侵蚀,充分保障了工艺的稳定性。

Description

一种静电卡盘
技术领域
本发明涉及半导体加工设备,特别涉及一种半导体加工中的静电卡盘。
背景技术
在半导体制造工艺和LCD制造工艺中,为固定和支撑晶片,避免处理过程中出现移动或者错位现象,常常使用静电卡盘(简称ESC:Electrostatic chuck)。静电卡盘采用静电引力来固定晶片,比起以前采用的机械卡盘和真空吸盘,具有很多优势。静电卡盘减少了在使用机械卡盘由于压力、碰撞等原因造成的晶片破损;增大了晶片可被有效加工的面积;减少了晶片表面腐蚀物颗粒的沉积;使晶片与卡盘可以更好的进行热传导;并且可以在真空环境下工作,而真空吸盘则不可以。
一个典型的静电卡盘由绝缘层和基座组成。绝缘层用来支撑晶片,电极则埋藏在绝缘层之下的导电平面。静电卡盘是利用晶片和电极之前产生的库伦力或是利用晶片和电极之间产生的J-R力来达到固定晶片的目的。基座则用来支撑绝缘层,接入RF偏压,作为冷井或供热源,来控制晶片的温度。
一般陶瓷层和基座之间用一种粘接剂(例如硅胶)来粘接。但是由于等离子体刻蚀时,受到等离子体的侵蚀,粘接剂常常受到破坏,产生污染,更使绝缘层和基座脱离,对工程带来非常严重的影响。为了解决这个问题,人们想出了各种办法。有的在粘接剂的周围用另外一种粘接剂(如epoxy)再一次封住,如图1所示。如图1所示,在粘接剂周围用另一种粘接剂粘接,试图来减少等离子体的影响。图中1为陶瓷层,2为内嵌在陶瓷层里面的电极,4为基座,5为使用的主要粘接剂,3为在周围一圈封住的粘接剂(epoxy),可是这种方法反而加剧了腐蚀,产生了很多聚合物。
而有的靠拉低粘接剂的位置的方法,想减少等离子体的影响,如图2所示。陶瓷层1设计成帽子状,用这种方法有效地拉低了粘接剂的位置。可是,这种方法最终还是避免不了受到等离子体的侵害,要解决这一问题,最根本的方法是不让粘接剂露在等离子体可以到达的地方。
发明内容
本发明的目的是提供一种不让粘接剂暴露于等离子体的静电卡盘。
本发明针对在半导体制造工艺中,由于等离子体的侵蚀,粘接剂受到破坏,产生污染,更使绝缘层和基座脱离,对工程带来严重影响的这一问题,设计一个可行的方案:静电卡盘由基座和绝缘层粘合而成,在绝缘层下端在加工的时候,加工一个很浅的圆形凹槽,其直径与基座的粘接面的直径相同,深度为一层粘接剂所需的尺度,如0.2~2mm,与绝缘层粘接的基座的直径小于陶瓷板的直径1~2mm,基座和陶瓷用粘接剂粘接,粘接剂不露在表面,而是被陶瓷层和基座包围住。为防止有细微的缝隙,其粘接处的边缘最好可以镀上一层膜,以确保充分地密封性。
静电卡盘在此状态下,其粘接剂避开了等离子体可到达的范围,被牢牢地锁在了陶瓷层和基座上,不会受到等离子体的侵蚀,充分保障了工艺的稳定性。
附图说明
图1现有的一种静电卡盘剖面示意图;
图2现有的另一种静电卡盘剖面示意图;
图3是图2中A部分的放大结构示意图;
图4本发明的静电卡盘剖面示意图。
具体实施方式
以下实施例用于说明本发明,但不用来限制本发明的范围,有关技术领域的普通技术人员,在不脱离本实用新型的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由各项权利要求限定。
参考图4,图中1为陶瓷层,电极2内嵌在陶瓷层靠上0.5~1mm处的位置,电极的直径要小于陶瓷层的直径约4mm。陶瓷层下端在加工的时候,加工成一个很浅的圆形凹槽6,其直径与基座4的粘接面的直径相同,深度为1mm毫米。也就是说在此设计中,与陶瓷层粘接的基座的直径要小于陶瓷板的直径1~2mm,而基座和陶瓷用粘接剂粘接,粘接剂不露在表面,而是被陶瓷层和基座包围住了。
此设计要求加工工艺非常严格,必需要保证陶瓷层下面挖的凹槽很浅,只用来粘接剂的空间。为防止有细微的缝隙,其粘接处的边缘最好可以镀上一层膜,以确保充分地密封性。

Claims (4)

1、一种静电卡盘,包括基座和绝缘层,绝缘层用粘接剂粘接在基座上,其特征在于,绝缘层下端部设有圆形凹槽,凹槽的直径与基座连接面直径相同,深度为一层粘接剂所需的尺度,粘接剂涂于所述圆形凹槽内。
2、如权利要求1所述的静电卡盘,其特征在于,所述凹槽的深度为0.5~2毫米。
3、如权利要求1所述的静电卡盘,其特征在于,所述绝缘层下端粘接的基座表面直径比绝缘层直径小1~2毫米。
4、如权利要求1至3之一所述的静电卡盘,其特征在于,在基座与绝缘层粘接处的边缘镀有一层膜。
CN 200510126303 2005-12-05 2005-12-05 一种静电卡盘 Pending CN1851896A (zh)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104247003A (zh) * 2012-04-26 2014-12-24 应用材料公司 针对防止静电夹盘的黏接粘合剂侵蚀的方法及设备
CN106997842A (zh) * 2016-01-22 2017-08-01 应用材料公司 控制电容耦合等离子体工艺设备的边缘环的射频振幅
US11446788B2 (en) 2014-10-17 2022-09-20 Applied Materials, Inc. Precursor formulations for polishing pads produced by an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11524384B2 (en) 2017-08-07 2022-12-13 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
US11685014B2 (en) 2018-09-04 2023-06-27 Applied Materials, Inc. Formulations for advanced polishing pads
US11724362B2 (en) 2014-10-17 2023-08-15 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US11772229B2 (en) 2016-01-19 2023-10-03 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11958162B2 (en) 2014-10-17 2024-04-16 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11964359B2 (en) 2015-10-30 2024-04-23 Applied Materials, Inc. Apparatus and method of forming a polishing article that has a desired zeta potential
US11986922B2 (en) 2015-11-06 2024-05-21 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US12023853B2 (en) 2014-10-17 2024-07-02 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104247003B (zh) * 2012-04-26 2018-06-15 应用材料公司 针对防止静电夹盘的黏接粘合剂侵蚀的方法及设备
CN104247003A (zh) * 2012-04-26 2014-12-24 应用材料公司 针对防止静电夹盘的黏接粘合剂侵蚀的方法及设备
US11724362B2 (en) 2014-10-17 2023-08-15 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US11446788B2 (en) 2014-10-17 2022-09-20 Applied Materials, Inc. Precursor formulations for polishing pads produced by an additive manufacturing process
US12023853B2 (en) 2014-10-17 2024-07-02 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11958162B2 (en) 2014-10-17 2024-04-16 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11964359B2 (en) 2015-10-30 2024-04-23 Applied Materials, Inc. Apparatus and method of forming a polishing article that has a desired zeta potential
US11986922B2 (en) 2015-11-06 2024-05-21 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US11772229B2 (en) 2016-01-19 2023-10-03 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
CN106997842A (zh) * 2016-01-22 2017-08-01 应用材料公司 控制电容耦合等离子体工艺设备的边缘环的射频振幅
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
US11980992B2 (en) 2017-07-26 2024-05-14 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11524384B2 (en) 2017-08-07 2022-12-13 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
US11685014B2 (en) 2018-09-04 2023-06-27 Applied Materials, Inc. Formulations for advanced polishing pads

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