WO2008117573A1 - 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 - Google Patents

化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 Download PDF

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Publication number
WO2008117573A1
WO2008117573A1 PCT/JP2008/052046 JP2008052046W WO2008117573A1 WO 2008117573 A1 WO2008117573 A1 WO 2008117573A1 JP 2008052046 W JP2008052046 W JP 2008052046W WO 2008117573 A1 WO2008117573 A1 WO 2008117573A1
Authority
WO
WIPO (PCT)
Prior art keywords
aqueous dispersion
mechanical polishing
chemical mechanical
kit
preparing
Prior art date
Application number
PCT/JP2008/052046
Other languages
English (en)
French (fr)
Inventor
Masatoshi Ikeda
Akihiro Takemura
Hirotaka Shida
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2009506235A priority Critical patent/JPWO2008117573A1/ja
Publication of WO2008117573A1 publication Critical patent/WO2008117573A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　本発明に係る化学機械研磨用水系分散体は、（Ａ）アミノ基およびカチオン性官能基から選択される少なくとも１種を側鎖に有する水溶性の重合体と、（Ｂ）酸化剤と、（Ｃ）アミノ酸、有機酸および無機酸から選択される少なくとも１種の（Ａ）成分以外の化合物と、（Ｄ）砥粒と、を含有する。
PCT/JP2008/052046 2007-03-27 2008-02-07 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 WO2008117573A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009506235A JPWO2008117573A1 (ja) 2007-03-27 2008-02-07 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007082510 2007-03-27
JP2007-082510 2007-03-27

Publications (1)

Publication Number Publication Date
WO2008117573A1 true WO2008117573A1 (ja) 2008-10-02

Family

ID=39788313

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052046 WO2008117573A1 (ja) 2007-03-27 2008-02-07 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JPWO2008117573A1 (ja)
TW (1) TW200845175A (ja)
WO (1) WO2008117573A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135792A (ja) * 2008-12-03 2010-06-17 Lg Chem Ltd １次化学的機械的研磨用スラリー組成物および化学的機械的研磨方法
JP4772156B1 (ja) * 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
JP2013043893A (ja) * 2011-08-22 2013-03-04 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
WO2015141687A1 (ja) * 2014-03-17 2015-09-24 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009048436B4 (de) * 2009-10-07 2012-12-20 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2004311967A (ja) * 2003-03-27 2004-11-04 Nippon Shokubai Co Ltd Ｃｍｐ研磨剤用ポリマー及び組成物
JP2005347579A (ja) * 2004-06-03 2005-12-15 Nippon Shokubai Co Ltd 研磨剤用添加剤と研磨剤
JP2006269909A (ja) * 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2006524918A (ja) * 2003-04-21 2006-11-02 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐ用被覆金属酸化物粒子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3825246B2 (ja) * 2000-11-24 2006-09-27 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4336550B2 (ja) * 2003-09-09 2009-09-30 花王株式会社 磁気ディスク用研磨液キット
JP2005353681A (ja) * 2004-06-08 2005-12-22 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤、その製造方法及び基板の研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2004311967A (ja) * 2003-03-27 2004-11-04 Nippon Shokubai Co Ltd Ｃｍｐ研磨剤用ポリマー及び組成物
JP2006524918A (ja) * 2003-04-21 2006-11-02 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐ用被覆金属酸化物粒子
JP2005347579A (ja) * 2004-06-03 2005-12-15 Nippon Shokubai Co Ltd 研磨剤用添加剤と研磨剤
JP2006269909A (ja) * 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135792A (ja) * 2008-12-03 2010-06-17 Lg Chem Ltd １次化学的機械的研磨用スラリー組成物および化学的機械的研磨方法
JP4772156B1 (ja) * 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
JP2013043893A (ja) * 2011-08-22 2013-03-04 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
WO2015141687A1 (ja) * 2014-03-17 2015-09-24 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法

Also Published As

Publication number Publication date
JPWO2008117573A1 (ja) 2010-07-15
TW200845175A (en) 2008-11-16

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