WO2004083328A3 - Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles - Google Patents

Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles Download PDF

Info

Publication number
WO2004083328A3
WO2004083328A3 PCT/US2004/007468 US2004007468W WO2004083328A3 WO 2004083328 A3 WO2004083328 A3 WO 2004083328A3 US 2004007468 W US2004007468 W US 2004007468W WO 2004083328 A3 WO2004083328 A3 WO 2004083328A3
Authority
WO
WIPO (PCT)
Prior art keywords
chemical
abrasive particles
planarization process
mechanical planarization
slurry compositions
Prior art date
Application number
PCT/US2004/007468
Other languages
French (fr)
Other versions
WO2004083328A2 (en
Inventor
Sharad Mathur
Hamad Moini
Ivan Petrovic
Original Assignee
Engelhard Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Engelhard Corp filed Critical Engelhard Corp
Priority to JP2006507090A priority Critical patent/JP2007525815A/en
Priority to EP04719748A priority patent/EP1620517A2/en
Publication of WO2004083328A2 publication Critical patent/WO2004083328A2/en
Publication of WO2004083328A3 publication Critical patent/WO2004083328A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A chemical-mechanical abrasive composition for use in semiconductor processing uses abrasive particles having a non-spherical morphology.
PCT/US2004/007468 2003-03-17 2004-03-11 Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles WO2004083328A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006507090A JP2007525815A (en) 2003-03-17 2004-03-11 Slurry compositions for use in chemical-mechanical planarization processes
EP04719748A EP1620517A2 (en) 2003-03-17 2004-03-11 Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/ 2002-05-28
US45521603P 2003-03-17 2003-03-17
US60/455,216 2003-03-17
US50944503P 2003-10-08 2003-10-08
US60/509,445 2003-10-08
US10/792,738 US20040216388A1 (en) 2003-03-17 2004-03-05 Slurry compositions for use in a chemical-mechanical planarization process

Publications (2)

Publication Number Publication Date
WO2004083328A2 WO2004083328A2 (en) 2004-09-30
WO2004083328A3 true WO2004083328A3 (en) 2004-11-11

Family

ID=33314230

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/007468 WO2004083328A2 (en) 2003-03-17 2004-03-11 Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles

Country Status (5)

Country Link
US (1) US20040216388A1 (en)
EP (1) EP1620517A2 (en)
JP (1) JP2007525815A (en)
KR (1) KR20050111391A (en)
WO (1) WO2004083328A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087529B2 (en) * 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
US7223156B2 (en) 2003-11-14 2007-05-29 Amcol International Corporation Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces
US7919815B1 (en) * 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
US20060283093A1 (en) * 2005-06-15 2006-12-21 Ivan Petrovic Planarization composition
KR101022982B1 (en) * 2005-09-30 2011-03-18 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Polishing slurries and methods for utilizing same
EP1994112B1 (en) * 2006-01-25 2018-09-19 LG Chem, Ltd. Cmp slurry and method for polishing semiconductor wafer using the same
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
ES2582573T3 (en) 2008-09-30 2016-09-13 The Procter & Gamble Company Hard surface liquid cleaning compositions
EP2328999A1 (en) 2008-09-30 2011-06-08 The Procter & Gamble Company Liquid hard surface cleaning composition
EP2328998A1 (en) 2008-09-30 2011-06-08 The Procter & Gamble Company Liquid hard surface cleaning composition
KR101279971B1 (en) 2008-12-31 2013-07-05 제일모직주식회사 CMP slurry composition for polishing copper barrier layer, polishing method using the composition, and semiconductor device manifactured by the method
US7763577B1 (en) * 2009-02-27 2010-07-27 Uwiz Technology Co., Ltd. Acidic post-CMP cleaning composition
US20100258143A1 (en) * 2009-04-13 2010-10-14 Microchip Technology Incorporated Scrubber clean before oxide chemical mechanical polish (cmp) for reduced microscratches and improved yields
EP2516609B1 (en) * 2009-12-22 2013-11-27 The Procter and Gamble Company Liquid cleaning and/or cleansing composition
US8680036B2 (en) 2009-12-22 2014-03-25 The Procter & Gamble Company Liquid cleaning composition comprising color-stable polyurethane abrasive particles
JP5902669B2 (en) 2010-04-21 2016-04-13 ザ プロクター アンド ギャンブル カンパニー Liquid cleaning and / or cleansing composition
EP2431451A1 (en) 2010-09-21 2012-03-21 The Procter & Gamble Company Liquid detergent composition with abrasive particles
US9353337B2 (en) 2010-09-21 2016-05-31 The Procter & Gamble Company Liquid cleaning composition
JP5702469B2 (en) 2010-09-21 2015-04-15 ザ プロクター アンド ギャンブルカンパニー Liquid cleaning composition
EP2721136A1 (en) 2011-06-20 2014-04-23 The Procter and Gamble Company Liquid cleaning and/or cleansing composition
RU2566750C2 (en) 2011-06-20 2015-10-27 Дзе Проктер Энд Гэмбл Компани Liquid composition for cleaning and/or fine purification
EP2537917A1 (en) 2011-06-20 2012-12-26 The Procter & Gamble Company Liquid detergent composition with abrasive particles
US8852643B2 (en) 2011-06-20 2014-10-07 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
KR20130090209A (en) * 2012-02-03 2013-08-13 삼성전자주식회사 Apparatus and method for treating substrate
EP2719752B1 (en) 2012-10-15 2016-03-16 The Procter and Gamble Company Liquid detergent composition with abrasive particles
WO2014190865A1 (en) * 2013-05-31 2014-12-04 Unilever N.V. Composition for cleaning of hard surfaces
WO2018123875A1 (en) * 2016-12-26 2018-07-05 株式会社フジミインコーポレーテッド Polishing composition and polishing method
CN114539813B (en) * 2020-11-18 2024-09-24 华为技术有限公司 Non-spherical silica particles, method for producing the same, and polishing liquid

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549374A (en) * 1982-08-12 1985-10-29 International Business Machines Corporation Method for polishing semiconductor wafers with montmorillonite slurry
EP0773269A2 (en) * 1995-11-13 1997-05-14 Kabushiki Kaisha Toshiba Polishing slurry
WO2001048807A1 (en) * 1999-12-28 2001-07-05 Intel Corporation Abrasives for chemical mechanical polishing
WO2003064551A1 (en) * 2002-01-25 2003-08-07 Ekc Technology, Inc. Compositions and methods for chemical-mechanical planarization o f noble-metal-featured substrates. these treated substrates
WO2004063301A1 (en) * 2003-01-03 2004-07-29 Air Products And Chemicals, Inc. Composition and method used for chemical mechanical planarization of metals

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2441534A (en) * 1940-01-24 1948-05-11 Babcock & Wilcox Co Abrasive materials and method of manufacturing the same
US3105013A (en) * 1961-09-14 1963-09-24 Bristol Myers Co Fluoride dentifrices containing calcined aluminum silicate abrasives
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US4038099A (en) * 1971-08-30 1977-07-26 The Mearl Corporation Rutile-coated mica nacreous pigments and process for the preparation thereof
US4122163A (en) * 1976-08-02 1978-10-24 Indiana University Foundation Dentifrice preparation comprising purified, calcined kaolin abrasives
US4755223A (en) * 1986-08-22 1988-07-05 Antonio Castaldo Liquid composition for cleaning and polishing cymbals comprising kaolin clay
US4767466A (en) * 1986-09-16 1988-08-30 Engelhard Corporation Bulking pigments
US4956015A (en) * 1988-01-19 1990-09-11 Mitsubishi Kasei Corporation Polishing composition
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
JPH05154760A (en) * 1991-12-02 1993-06-22 Fujimi Inkooporeetetsudo:Kk Polishing composition and polishing method for silicon wafer
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
NL9401433A (en) * 1994-09-02 1996-04-01 Univ Utrecht Synthetic swellable clay minerals.
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
JPH09139368A (en) * 1995-11-14 1997-05-27 Sony Corp Chemically and mechanically polishing method
US6030491A (en) * 1997-08-19 2000-02-29 Micron Technology, Inc. Processing compositions and methods of using same
TW419518B (en) * 1998-02-20 2001-01-21 Ind Tech Res Inst Non-Newtonian-fluid-behaviored formulation
US6475407B2 (en) * 1998-05-19 2002-11-05 Showa Denko K.K. Composition for polishing metal on semiconductor wafer and method of using same
KR100324311B1 (en) * 1998-10-26 2002-05-13 김영환 Manufacturing method of slurry for chemical mechanical polishing process of semiconductor device
JP3709752B2 (en) * 1999-01-26 2005-10-26 株式会社村田製作所 Dielectric ceramic composition and ceramic multilayer substrate
US6251150B1 (en) * 1999-05-27 2001-06-26 Ekc Technology, Inc. Slurry composition and method of chemical mechanical polishing using same
JP4557105B2 (en) * 1999-05-28 2010-10-06 日産化学工業株式会社 Polishing composition
TW486514B (en) * 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6391467B1 (en) * 1999-07-08 2002-05-21 Exxonmobil Oil Corporation Cast film made from metallocene-catalyzed polypropylene
US6322425B1 (en) * 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
JP2002220584A (en) * 2001-01-29 2002-08-09 Sumitomo Chem Co Ltd Precision abrasive
US7087529B2 (en) * 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549374A (en) * 1982-08-12 1985-10-29 International Business Machines Corporation Method for polishing semiconductor wafers with montmorillonite slurry
EP0773269A2 (en) * 1995-11-13 1997-05-14 Kabushiki Kaisha Toshiba Polishing slurry
WO2001048807A1 (en) * 1999-12-28 2001-07-05 Intel Corporation Abrasives for chemical mechanical polishing
US20030129838A1 (en) * 1999-12-28 2003-07-10 Cadien Kenneth C. Abrasives for chemical mechanical polishing
WO2003064551A1 (en) * 2002-01-25 2003-08-07 Ekc Technology, Inc. Compositions and methods for chemical-mechanical planarization o f noble-metal-featured substrates. these treated substrates
WO2004063301A1 (en) * 2003-01-03 2004-07-29 Air Products And Chemicals, Inc. Composition and method used for chemical mechanical planarization of metals

Also Published As

Publication number Publication date
WO2004083328A2 (en) 2004-09-30
US20040216388A1 (en) 2004-11-04
JP2007525815A (en) 2007-09-06
KR20050111391A (en) 2005-11-24
EP1620517A2 (en) 2006-02-01

Similar Documents

Publication Publication Date Title
WO2004083328A3 (en) Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles
TW200720383A (en) Polishing fluids and methods for CMP
WO2006074248A3 (en) Engineered non-polymeric organic particles for chemical mechanical planarization
WO2008116043A3 (en) Abrasive articles, rotationally reciprocating tools, and methods
WO2004072199A3 (en) Mixed-abrasive polishing composition and method for using the same
WO2009046311A3 (en) Composite slurries of nano silicon carbide and alumina
PL1660606T3 (en) Abrasive particles for chemical mechanical polishing
WO2002102920A8 (en) A silica and a silica-based slurry
MY126717A (en) Cmp composition containing silane modified abrasive particles.
TW200718511A (en) Abrasive tools having a permeable structure
TW200738855A (en) CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
TW200706703A (en) Integrated chemical mechanical polishing composition and process for single platen processing
AU2003238888A1 (en) Abrasive particles to clean semiconductor wafers during chemical mechanical planarization
WO2008116049A3 (en) Methods of removing defects in surfaces
WO2006081149A3 (en) Novel polishing slurries and abrasive-free solutions having a multifunctional activator
EP1205965A4 (en) Abrasive compound for cmp, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for cmp abrasive compound
WO2011005456A3 (en) Cmp compositions and methods for suppressing polysilicon removal rates
WO2007041199A3 (en) Polishing slurries and methods for utilizing same
EP1650278A3 (en) Composition for selectively polishing silicon nitride layer and polishing method employing it
TW200706619A (en) Polishing composition and method for defect improvement by reduced particle stiction on copper surface
EP1994112A4 (en) Cmp slurry and method for polishing semiconductor wafer using the same
AU2003254825A1 (en) Cmp abrasive and substrate polishing method
TW200705376A (en) Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
TW200738856A (en) Polishing composition and polishing method
TW200704760A (en) Adjuvant for chemical mechanical polishing slurry

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004719748

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2006507090

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020057017570

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020057017570

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004719748

Country of ref document: EP