JP2018510230A5 - - Google Patents
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- Publication number
- JP2018510230A5 JP2018510230A5 JP2017540578A JP2017540578A JP2018510230A5 JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5 JP 2017540578 A JP2017540578 A JP 2017540578A JP 2017540578 A JP2017540578 A JP 2017540578A JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- colloidal silica
- silica particles
- anionic surfactant
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/612,736 US9803109B2 (en) | 2015-02-03 | 2015-02-03 | CMP composition for silicon nitride removal |
| US14/612,736 | 2015-02-03 | ||
| PCT/US2016/014858 WO2016126458A1 (en) | 2015-02-03 | 2016-01-26 | Cmp composition for silicon nitride removal |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018510230A JP2018510230A (ja) | 2018-04-12 |
| JP2018510230A5 true JP2018510230A5 (enExample) | 2019-03-07 |
| JP6822966B2 JP6822966B2 (ja) | 2021-01-27 |
Family
ID=56552860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017540578A Active JP6822966B2 (ja) | 2015-02-03 | 2016-01-26 | 窒化ケイ素の除去のためのｃｍｐ組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9803109B2 (enExample) |
| EP (1) | EP3253843B1 (enExample) |
| JP (1) | JP6822966B2 (enExample) |
| KR (1) | KR102625476B1 (enExample) |
| CN (1) | CN107207910B (enExample) |
| TW (1) | TWI600615B (enExample) |
| WO (1) | WO2016126458A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107207268A (zh) | 2015-01-19 | 2017-09-26 | 福吉米株式会社 | 改性胶体二氧化硅及其制造方法、以及使用其的研磨剂 |
| KR102450333B1 (ko) | 2016-05-19 | 2022-10-04 | 주식회사 동진쎄미켐 | 화학-기계적 연마용 슬러리 조성물 |
| WO2018012175A1 (ja) * | 2016-07-15 | 2018-01-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法および研磨方法 |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| IL268613B2 (en) * | 2017-02-24 | 2023-10-01 | Illumina Inc | Calcium Carbonate Slurry |
| JP6881585B2 (ja) * | 2017-08-09 | 2021-06-02 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
| JP2019062078A (ja) * | 2017-09-26 | 2019-04-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| US11186748B2 (en) * | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
| KR20200038014A (ko) * | 2018-10-02 | 2020-04-10 | 주식회사 케이씨텍 | 표면처리 조성물 및 그것을 이용한 표면처리 방법 |
| US11198797B2 (en) * | 2019-01-24 | 2021-12-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates |
| JP7041714B2 (ja) * | 2019-06-26 | 2022-03-24 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| KR20210006641A (ko) * | 2019-07-09 | 2021-01-19 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| JP7440326B2 (ja) * | 2020-04-01 | 2024-02-28 | 山口精研工業株式会社 | 研磨剤組成物 |
| US12012540B2 (en) * | 2021-05-26 | 2024-06-18 | Entegris, Inc. | Compositions and methods for selectively etching silicon nitride films |
| CN114481286A (zh) * | 2021-12-28 | 2022-05-13 | 广东省科学院化工研究所 | 一种用于电解抛光的固体颗粒物 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| WO2001044402A1 (en) * | 1999-12-17 | 2001-06-21 | Cabot Microelectronics Corporation | Method of polishing or planarizing a substrate |
| CN1311009C (zh) | 2001-11-15 | 2007-04-18 | 三星电子株式会社 | 添加剂组合物、含有该添加剂组合物的淤浆组合物及使用该淤浆组合物抛光物体的方法 |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| KR100596865B1 (ko) | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법 |
| KR100582771B1 (ko) | 2004-03-29 | 2006-05-22 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007207908A (ja) | 2006-01-31 | 2007-08-16 | Fujifilm Corp | バリア層用研磨液 |
| US7902072B2 (en) * | 2006-02-28 | 2011-03-08 | Fujifilm Corporation | Metal-polishing composition and chemical-mechanical polishing method |
| JP2007258606A (ja) * | 2006-03-24 | 2007-10-04 | Fujifilm Corp | 化学的機械的研磨用研磨液 |
| US8759216B2 (en) | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR101032504B1 (ko) | 2006-06-30 | 2011-05-04 | 주식회사 엘지화학 | Ｃｍｐ 슬러리 |
| JP2008112970A (ja) | 2006-10-05 | 2008-05-15 | Hitachi Chem Co Ltd | 研磨用組成物 |
| KR101232442B1 (ko) * | 2007-09-21 | 2013-02-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 |
| US20090130849A1 (en) * | 2007-10-29 | 2009-05-21 | Wai Mun Lee | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| JP4521058B2 (ja) * | 2008-03-24 | 2010-08-11 | 株式会社Adeka | 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物 |
| JP2009289885A (ja) * | 2008-05-28 | 2009-12-10 | Fujifilm Corp | 研磨液及び研磨方法 |
| JP5467804B2 (ja) | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
| US9548211B2 (en) | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
| MY156687A (en) | 2009-06-22 | 2016-03-15 | Cabot Microelectronics Corp | Cmp compositions and method for suppressing polysilicon removal rates |
| CN102640275B (zh) | 2009-11-30 | 2015-12-02 | 巴斯夫欧洲公司 | 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂 |
| CN103998547A (zh) | 2011-12-21 | 2014-08-20 | 巴斯夫欧洲公司 | 包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物 |
| EP2662427B1 (en) * | 2012-05-10 | 2018-03-14 | Versum Materials US, LLC | Chemical mechanical polishing composition having chemical additives and methods for using same |
| US8999193B2 (en) | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| US8980750B2 (en) * | 2012-07-06 | 2015-03-17 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt |
-
2015
- 2015-02-03 US US14/612,736 patent/US9803109B2/en active Active
-
2016
- 2016-01-26 WO PCT/US2016/014858 patent/WO2016126458A1/en not_active Ceased
- 2016-01-26 CN CN201680008583.XA patent/CN107207910B/zh active Active
- 2016-01-26 JP JP2017540578A patent/JP6822966B2/ja active Active
- 2016-01-26 EP EP16746977.4A patent/EP3253843B1/en active Active
- 2016-01-26 KR KR1020177024277A patent/KR102625476B1/ko active Active
- 2016-02-03 TW TW105103564A patent/TWI600615B/zh active
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