JP2018510230A5 - - Google Patents
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- Publication number
- JP2018510230A5 JP2018510230A5 JP2017540578A JP2017540578A JP2018510230A5 JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5 JP 2017540578 A JP2017540578 A JP 2017540578A JP 2017540578 A JP2017540578 A JP 2017540578A JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- colloidal silica
- silica particles
- anionic surfactant
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/612,736 | 2015-02-03 | ||
| US14/612,736 US9803109B2 (en) | 2015-02-03 | 2015-02-03 | CMP composition for silicon nitride removal |
| PCT/US2016/014858 WO2016126458A1 (en) | 2015-02-03 | 2016-01-26 | Cmp composition for silicon nitride removal |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018510230A JP2018510230A (ja) | 2018-04-12 |
| JP2018510230A5 true JP2018510230A5 (enExample) | 2019-03-07 |
| JP6822966B2 JP6822966B2 (ja) | 2021-01-27 |
Family
ID=56552860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017540578A Active JP6822966B2 (ja) | 2015-02-03 | 2016-01-26 | 窒化ケイ素の除去のためのｃｍｐ組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9803109B2 (enExample) |
| EP (1) | EP3253843B1 (enExample) |
| JP (1) | JP6822966B2 (enExample) |
| KR (1) | KR102625476B1 (enExample) |
| CN (1) | CN107207910B (enExample) |
| TW (1) | TWI600615B (enExample) |
| WO (1) | WO2016126458A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3248941B1 (en) * | 2015-01-19 | 2023-04-12 | Fujimi Incorporated | Modified colloidal silica, method of producing same, and polishing agent using same |
| JP7032327B2 (ja) | 2016-05-19 | 2022-03-08 | ドンジン セミケム カンパニー リミテッド | 化学－機械的研磨用スラリー組成物 |
| WO2018012175A1 (ja) * | 2016-07-15 | 2018-01-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法および研磨方法 |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| IL268613B2 (en) | 2017-02-24 | 2023-10-01 | Illumina Inc | Calcium carbonate suspension |
| WO2019030865A1 (ja) * | 2017-08-09 | 2019-02-14 | 日立化成株式会社 | 研磨液及び研磨方法 |
| JP2019062078A (ja) * | 2017-09-26 | 2019-04-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| US11186748B2 (en) * | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| US10428241B2 (en) * | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
| KR20200038014A (ko) * | 2018-10-02 | 2020-04-10 | 주식회사 케이씨텍 | 표면처리 조성물 및 그것을 이용한 표면처리 방법 |
| US11198797B2 (en) * | 2019-01-24 | 2021-12-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates |
| JP7041714B2 (ja) * | 2019-06-26 | 2022-03-24 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| KR20210006641A (ko) * | 2019-07-09 | 2021-01-19 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| JP7440326B2 (ja) * | 2020-04-01 | 2024-02-28 | 山口精研工業株式会社 | 研磨剤組成物 |
| KR20260004549A (ko) * | 2021-05-26 | 2026-01-08 | 엔테그리스, 아이엔씨. | 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법 |
| CN114481286A (zh) * | 2021-12-28 | 2022-05-13 | 广东省科学院化工研究所 | 一种用于电解抛光的固体颗粒物 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| EP1242557B8 (en) * | 1999-12-17 | 2006-02-01 | Cabot Microelectronics Corporation | Method of polishing or planarizing a substrate |
| EP1448737B1 (en) | 2001-11-15 | 2012-01-25 | Samsung Electronics Co., Ltd. | Slurry composition including an additive composition, and method of polishing an object using the slurry composition |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| KR100596865B1 (ko) | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법 |
| KR100582771B1 (ko) | 2004-03-29 | 2006-05-22 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
| US7678702B2 (en) | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007207908A (ja) * | 2006-01-31 | 2007-08-16 | Fujifilm Corp | バリア層用研磨液 |
| US7902072B2 (en) * | 2006-02-28 | 2011-03-08 | Fujifilm Corporation | Metal-polishing composition and chemical-mechanical polishing method |
| JP2007258606A (ja) | 2006-03-24 | 2007-10-04 | Fujifilm Corp | 化学的機械的研磨用研磨液 |
| US8759216B2 (en) | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR101032504B1 (ko) | 2006-06-30 | 2011-05-04 | 주식회사 엘지화학 | Ｃｍｐ 슬러리 |
| JP2008112970A (ja) | 2006-10-05 | 2008-05-15 | Hitachi Chem Co Ltd | 研磨用組成物 |
| SG184772A1 (en) * | 2007-09-21 | 2012-10-30 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| TW200946621A (en) * | 2007-10-29 | 2009-11-16 | Ekc Technology Inc | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| JP4521058B2 (ja) * | 2008-03-24 | 2010-08-11 | 株式会社Adeka | 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物 |
| JP2009289885A (ja) * | 2008-05-28 | 2009-12-10 | Fujifilm Corp | 研磨液及び研磨方法 |
| JP5467804B2 (ja) * | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
| US9548211B2 (en) | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
| CN104845532B (zh) * | 2009-06-22 | 2017-10-03 | 嘉柏微电子材料股份公司 | 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法 |
| WO2011064734A1 (en) | 2009-11-30 | 2011-06-03 | Basf Se | Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process |
| JP6013504B2 (ja) | 2011-12-21 | 2016-10-25 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Ｃｍｐ組成物、半導体装置の製造方法及びｃｍｐ組成物の使用方法 |
| US8999193B2 (en) | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| CN103387796B (zh) * | 2012-05-10 | 2015-08-12 | 气体产品与化学公司 | 具有化学添加剂的化学机械抛光组合物及其使用方法 |
| US8980750B2 (en) * | 2012-07-06 | 2015-03-17 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt |
-
2015
- 2015-02-03 US US14/612,736 patent/US9803109B2/en active Active
-
2016
- 2016-01-26 JP JP2017540578A patent/JP6822966B2/ja active Active
- 2016-01-26 WO PCT/US2016/014858 patent/WO2016126458A1/en not_active Ceased
- 2016-01-26 KR KR1020177024277A patent/KR102625476B1/ko active Active
- 2016-01-26 CN CN201680008583.XA patent/CN107207910B/zh active Active
- 2016-01-26 EP EP16746977.4A patent/EP3253843B1/en active Active
- 2016-02-03 TW TW105103564A patent/TWI600615B/zh active
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