JP2018510230A5 - - Google Patents

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Publication number
JP2018510230A5
JP2018510230A5 JP2017540578A JP2017540578A JP2018510230A5 JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5 JP 2017540578 A JP2017540578 A JP 2017540578A JP 2017540578 A JP2017540578 A JP 2017540578A JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5
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JP
Japan
Prior art keywords
polishing composition
colloidal silica
silica particles
anionic surfactant
substrate
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JP2017540578A
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English (en)
Japanese (ja)
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JP6822966B2 (ja
JP2018510230A (ja
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Priority claimed from US14/612,736 external-priority patent/US9803109B2/en
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Publication of JP2018510230A5 publication Critical patent/JP2018510230A5/ja
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Publication of JP6822966B2 publication Critical patent/JP6822966B2/ja
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JP2017540578A 2015-02-03 2016-01-26 窒化ケイ素の除去のためのｃｍｐ組成物 Active JP6822966B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/612,736 US9803109B2 (en) 2015-02-03 2015-02-03 CMP composition for silicon nitride removal
US14/612,736 2015-02-03
PCT/US2016/014858 WO2016126458A1 (en) 2015-02-03 2016-01-26 Cmp composition for silicon nitride removal

Publications (3)

Publication Number Publication Date
JP2018510230A JP2018510230A (ja) 2018-04-12
JP2018510230A5 true JP2018510230A5 (enExample) 2019-03-07
JP6822966B2 JP6822966B2 (ja) 2021-01-27

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Application Number Title Priority Date Filing Date
JP2017540578A Active JP6822966B2 (ja) 2015-02-03 2016-01-26 窒化ケイ素の除去のためのｃｍｐ組成物

Country Status (7)

Country Link
US (1) US9803109B2 (enExample)
EP (1) EP3253843B1 (enExample)
JP (1) JP6822966B2 (enExample)
KR (1) KR102625476B1 (enExample)
CN (1) CN107207910B (enExample)
TW (1) TWI600615B (enExample)
WO (1) WO2016126458A1 (enExample)

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KR20210006641A (ko) * 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7440326B2 (ja) * 2020-04-01 2024-02-28 山口精研工業株式会社 研磨剤組成物
KR20240012468A (ko) * 2021-05-26 2024-01-29 엔테그리스, 아이엔씨. 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物

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