CN107207910B - 用于移除硅氮化物的化学机械抛光组合物 - Google Patents

用于移除硅氮化物的化学机械抛光组合物 Download PDF

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Publication number
CN107207910B
CN107207910B CN201680008583.XA CN201680008583A CN107207910B CN 107207910 B CN107207910 B CN 107207910B CN 201680008583 A CN201680008583 A CN 201680008583A CN 107207910 B CN107207910 B CN 107207910B
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polishing composition
silica particles
colloidal silica
polishing
anionic surfactant
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Chinese (zh)
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CN107207910A (zh
Inventor
黄宏聪
叶铭智
蔡智斌
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C09D1/02—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances alkali metal silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201680008583.XA 2015-02-03 2016-01-26 用于移除硅氮化物的化学机械抛光组合物 Active CN107207910B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/612,736 US9803109B2 (en) 2015-02-03 2015-02-03 CMP composition for silicon nitride removal
US14/612,736 2015-02-03
PCT/US2016/014858 WO2016126458A1 (en) 2015-02-03 2016-01-26 Cmp composition for silicon nitride removal

Publications (2)

Publication Number Publication Date
CN107207910A CN107207910A (zh) 2017-09-26
CN107207910B true CN107207910B (zh) 2021-03-09

Family

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CN201680008583.XA Active CN107207910B (zh) 2015-02-03 2016-01-26 用于移除硅氮化物的化学机械抛光组合物

Country Status (7)

Country Link
US (1) US9803109B2 (enExample)
EP (1) EP3253843B1 (enExample)
JP (1) JP6822966B2 (enExample)
KR (1) KR102625476B1 (enExample)
CN (1) CN107207910B (enExample)
TW (1) TWI600615B (enExample)
WO (1) WO2016126458A1 (enExample)

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WO2018012175A1 (ja) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法および研磨方法
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JP2019062078A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
US11186748B2 (en) * 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
KR20200038014A (ko) * 2018-10-02 2020-04-10 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
KR20210006641A (ko) * 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7440326B2 (ja) * 2020-04-01 2024-02-28 山口精研工業株式会社 研磨剤組成物
KR20240012468A (ko) * 2021-05-26 2024-01-29 엔테그리스, 아이엔씨. 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物

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CN100336188C (zh) * 2001-12-05 2007-09-05 卡伯特微电子公司 使用聚合物络合剂对铜cmp的方法
CN102482555A (zh) * 2009-06-22 2012-05-30 嘉柏微电子材料股份公司 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
CN103387796A (zh) * 2012-05-10 2013-11-13 气体产品与化学公司 具有化学添加剂的化学机械抛光组合物及其使用方法

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CN100336188C (zh) * 2001-12-05 2007-09-05 卡伯特微电子公司 使用聚合物络合剂对铜cmp的方法
CN102482555A (zh) * 2009-06-22 2012-05-30 嘉柏微电子材料股份公司 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
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Also Published As

Publication number Publication date
EP3253843A1 (en) 2017-12-13
EP3253843B1 (en) 2021-07-21
KR20170109642A (ko) 2017-09-29
TWI600615B (zh) 2017-10-01
EP3253843A4 (en) 2018-07-04
CN107207910A (zh) 2017-09-26
WO2016126458A1 (en) 2016-08-11
JP6822966B2 (ja) 2021-01-27
KR102625476B1 (ko) 2024-01-17
US9803109B2 (en) 2017-10-31
JP2018510230A (ja) 2018-04-12
US20160222254A1 (en) 2016-08-04
TW201639785A (zh) 2016-11-16

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