TWI600615B - 用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物 - Google Patents

用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物 Download PDF

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Publication number
TWI600615B
TWI600615B TW105103564A TW105103564A TWI600615B TW I600615 B TWI600615 B TW I600615B TW 105103564 A TW105103564 A TW 105103564A TW 105103564 A TW105103564 A TW 105103564A TW I600615 B TWI600615 B TW I600615B
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TW
Taiwan
Prior art keywords
polishing composition
polishing
substrate
anionic surfactant
hydroxyl groups
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TW105103564A
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English (en)
Chinese (zh)
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TW201639785A (zh
Inventor
黃宏聰
葉銘智
蔡智斌
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卡博特微電子公司
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Publication of TW201639785A publication Critical patent/TW201639785A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C09D1/02—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances alkali metal silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105103564A 2015-02-03 2016-02-03 用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物 TWI600615B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/612,736 US9803109B2 (en) 2015-02-03 2015-02-03 CMP composition for silicon nitride removal

Publications (2)

Publication Number Publication Date
TW201639785A TW201639785A (zh) 2016-11-16
TWI600615B true TWI600615B (zh) 2017-10-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW105103564A TWI600615B (zh) 2015-02-03 2016-02-03 用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物

Country Status (7)

Country Link
US (1) US9803109B2 (enExample)
EP (1) EP3253843B1 (enExample)
JP (1) JP6822966B2 (enExample)
KR (1) KR102625476B1 (enExample)
CN (1) CN107207910B (enExample)
TW (1) TWI600615B (enExample)
WO (1) WO2016126458A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107207268A (zh) 2015-01-19 2017-09-26 福吉米株式会社 改性胶体二氧化硅及其制造方法、以及使用其的研磨剂
KR102450333B1 (ko) 2016-05-19 2022-10-04 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
WO2018012175A1 (ja) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法および研磨方法
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
IL268613B2 (en) * 2017-02-24 2023-10-01 Illumina Inc Calcium Carbonate Slurry
JP6881585B2 (ja) * 2017-08-09 2021-06-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
JP2019062078A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
US11186748B2 (en) * 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
KR20200038014A (ko) * 2018-10-02 2020-04-10 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
KR20210006641A (ko) * 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7440326B2 (ja) * 2020-04-01 2024-02-28 山口精研工業株式会社 研磨剤組成物
US12012540B2 (en) * 2021-05-26 2024-06-18 Entegris, Inc. Compositions and methods for selectively etching silicon nitride films
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101490201A (zh) * 2006-06-07 2009-07-22 卡伯特微电子公司 用于抛光氮化硅材料的组合物及方法
TW201005077A (en) * 2008-07-11 2010-02-01 Fujifilm Corp Silicon nitride polishing liquid and polishing method

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
WO2001044402A1 (en) * 1999-12-17 2001-06-21 Cabot Microelectronics Corporation Method of polishing or planarizing a substrate
CN1311009C (zh) 2001-11-15 2007-04-18 三星电子株式会社 添加剂组合物、含有该添加剂组合物的淤浆组合物及使用该淤浆组合物抛光物体的方法
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
KR100596865B1 (ko) 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법
KR100582771B1 (ko) 2004-03-29 2006-05-22 한화석유화학 주식회사 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP2007207908A (ja) 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP2007258606A (ja) * 2006-03-24 2007-10-04 Fujifilm Corp 化学的機械的研磨用研磨液
KR101032504B1 (ko) 2006-06-30 2011-05-04 주식회사 엘지화학 Ｃｍｐ 슬러리
JP2008112970A (ja) 2006-10-05 2008-05-15 Hitachi Chem Co Ltd 研磨用組成物
KR101232442B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
US20090130849A1 (en) * 2007-10-29 2009-05-21 Wai Mun Lee Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Adeka 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物
JP2009289885A (ja) * 2008-05-28 2009-12-10 Fujifilm Corp 研磨液及び研磨方法
US9548211B2 (en) 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
MY156687A (en) 2009-06-22 2016-03-15 Cabot Microelectronics Corp Cmp compositions and method for suppressing polysilicon removal rates
CN102640275B (zh) 2009-11-30 2015-12-02 巴斯夫欧洲公司 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂
CN103998547A (zh) 2011-12-21 2014-08-20 巴斯夫欧洲公司 包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物
EP2662427B1 (en) * 2012-05-10 2018-03-14 Versum Materials US, LLC Chemical mechanical polishing composition having chemical additives and methods for using same
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
US8980750B2 (en) * 2012-07-06 2015-03-17 Basf Se Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101490201A (zh) * 2006-06-07 2009-07-22 卡伯特微电子公司 用于抛光氮化硅材料的组合物及方法
TW201005077A (en) * 2008-07-11 2010-02-01 Fujifilm Corp Silicon nitride polishing liquid and polishing method

Also Published As

Publication number Publication date
WO2016126458A1 (en) 2016-08-11
EP3253843B1 (en) 2021-07-21
KR20170109642A (ko) 2017-09-29
EP3253843A4 (en) 2018-07-04
US20160222254A1 (en) 2016-08-04
CN107207910B (zh) 2021-03-09
EP3253843A1 (en) 2017-12-13
CN107207910A (zh) 2017-09-26
JP6822966B2 (ja) 2021-01-27
JP2018510230A (ja) 2018-04-12
KR102625476B1 (ko) 2024-01-17
US9803109B2 (en) 2017-10-31
TW201639785A (zh) 2016-11-16

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