JP6822966B2 - 窒化ケイ素の除去のためのｃｍｐ組成物 - Google Patents

窒化ケイ素の除去のためのｃｍｐ組成物 Download PDF

Info

Publication number
JP6822966B2
JP6822966B2 JP2017540578A JP2017540578A JP6822966B2 JP 6822966 B2 JP6822966 B2 JP 6822966B2 JP 2017540578 A JP2017540578 A JP 2017540578A JP 2017540578 A JP2017540578 A JP 2017540578A JP 6822966 B2 JP6822966 B2 JP 6822966B2
Authority
JP
Japan
Prior art keywords
polishing
polishing composition
silica particles
colloidal silica
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017540578A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018510230A (ja
JP2018510230A5 (enExample
Inventor
フン−ツォン ホワーン
フン−ツォン ホワーン
ミーン−チー イェー
ミーン−チー イェー
チー−ピン ツァイ
チー−ピン ツァイ
Original Assignee
シーエムシー マテリアルズ，インコーポレイティド
シーエムシー マテリアルズ，インコーポレイティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シーエムシー マテリアルズ，インコーポレイティド, シーエムシー マテリアルズ，インコーポレイティド filed Critical シーエムシー マテリアルズ，インコーポレイティド
Publication of JP2018510230A publication Critical patent/JP2018510230A/ja
Publication of JP2018510230A5 publication Critical patent/JP2018510230A5/ja
Application granted granted Critical
Publication of JP6822966B2 publication Critical patent/JP6822966B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C09D1/02—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances alkali metal silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017540578A 2015-02-03 2016-01-26 窒化ケイ素の除去のためのｃｍｐ組成物 Active JP6822966B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/612,736 US9803109B2 (en) 2015-02-03 2015-02-03 CMP composition for silicon nitride removal
US14/612,736 2015-02-03
PCT/US2016/014858 WO2016126458A1 (en) 2015-02-03 2016-01-26 Cmp composition for silicon nitride removal

Publications (3)

Publication Number Publication Date
JP2018510230A JP2018510230A (ja) 2018-04-12
JP2018510230A5 JP2018510230A5 (enExample) 2019-03-07
JP6822966B2 true JP6822966B2 (ja) 2021-01-27

Family

ID=56552860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017540578A Active JP6822966B2 (ja) 2015-02-03 2016-01-26 窒化ケイ素の除去のためのｃｍｐ組成物

Country Status (7)

Country Link
US (1) US9803109B2 (enExample)
EP (1) EP3253843B1 (enExample)
JP (1) JP6822966B2 (enExample)
KR (1) KR102625476B1 (enExample)
CN (1) CN107207910B (enExample)
TW (1) TWI600615B (enExample)
WO (1) WO2016126458A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107207268A (zh) 2015-01-19 2017-09-26 福吉米株式会社 改性胶体二氧化硅及其制造方法、以及使用其的研磨剂
CN109153889B (zh) * 2016-05-19 2021-10-29 东进世美肯株式会社 用于化学机械抛光的浆料组合物
WO2018012175A1 (ja) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法および研磨方法
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
IL268613B2 (en) 2017-02-24 2023-10-01 Illumina Inc Calcium carbonate suspension
KR102571098B1 (ko) * 2017-08-09 2023-08-24 가부시끼가이샤 레조낙 연마액 및 연마 방법
JP2019062078A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
US11186748B2 (en) * 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
KR20200038014A (ko) * 2018-10-02 2020-04-10 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
KR20210006641A (ko) * 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7440326B2 (ja) * 2020-04-01 2024-02-28 山口精研工業株式会社 研磨剤組成物
KR20240012468A (ko) * 2021-05-26 2024-01-29 엔테그리스, 아이엔씨. 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
KR100563166B1 (ko) * 1999-12-17 2006-03-27 캐보트 마이크로일렉트로닉스 코포레이션 기판의 연마 또는 평탄화 방법
WO2003042310A1 (en) 2001-11-15 2003-05-22 Samsung Electronics Co., Ltd. Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
KR100596865B1 (ko) 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법
KR100582771B1 (ko) 2004-03-29 2006-05-22 한화석유화학 주식회사 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP2007207908A (ja) 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP2007258606A (ja) * 2006-03-24 2007-10-04 Fujifilm Corp 化学的機械的研磨用研磨液
US8759216B2 (en) 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
KR101032504B1 (ko) 2006-06-30 2011-05-04 주식회사 엘지화학 Ｃｍｐ 슬러리
JP2008112970A (ja) * 2006-10-05 2008-05-15 Hitachi Chem Co Ltd 研磨用組成物
EP2188344B1 (en) * 2007-09-21 2016-04-27 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
WO2009058274A1 (en) * 2007-10-29 2009-05-07 Ekc Technology, Inc. Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Adeka 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物
JP2009289885A (ja) * 2008-05-28 2009-12-10 Fujifilm Corp 研磨液及び研磨方法
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
US9548211B2 (en) 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
WO2011005456A2 (en) 2009-06-22 2011-01-13 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
WO2011064734A1 (en) 2009-11-30 2011-06-03 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
JP6013504B2 (ja) 2011-12-21 2016-10-25 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ Ｃｍｐ組成物、半導体装置の製造方法及びｃｍｐ組成物の使用方法
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
EP3333232B1 (en) * 2012-05-10 2020-03-04 Versum Materials US, LLC Chemical mechanical polishing composition having chemical additives and methods for using
US8980750B2 (en) * 2012-07-06 2015-03-17 Basf Se Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt

Also Published As

Publication number Publication date
EP3253843A1 (en) 2017-12-13
EP3253843B1 (en) 2021-07-21
KR20170109642A (ko) 2017-09-29
TWI600615B (zh) 2017-10-01
EP3253843A4 (en) 2018-07-04
CN107207910A (zh) 2017-09-26
WO2016126458A1 (en) 2016-08-11
KR102625476B1 (ko) 2024-01-17
US9803109B2 (en) 2017-10-31
JP2018510230A (ja) 2018-04-12
CN107207910B (zh) 2021-03-09
US20160222254A1 (en) 2016-08-04
TW201639785A (zh) 2016-11-16

Similar Documents

Publication Publication Date Title
JP6822966B2 (ja) 窒化ケイ素の除去のためのｃｍｐ組成物
EP2825609B1 (en) Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
KR102239037B1 (ko) 높은 제거율 및 낮은 결함성으로 산화물 및 질화물에 대해 선택적인 cmp 조성물
EP3347428B1 (en) Selective nitride slurries with improved stability and improved polishing characteristics
KR102283152B1 (ko) 기판을 연마하기 위한 습식 공정 세리아 조성물, 및 이와 관련된 방법
EP3230395B1 (en) Cmp compositons exhibiting reduced dishing in sti wafer polishing
JP6930976B2 (ja) 低ｋ基板の研磨方法
EP3526298B1 (en) Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
JP6595510B2 (ja) 高い除去速度と低欠陥性を有する、ポリシリコン及び窒化物を上回り酸化物に対して選択的なｃｍｐ組成物

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20191127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200306

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200407

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200703

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201208

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210107

R150 Certificate of patent or registration of utility model

Ref document number: 6822966

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250