SG11201407168PA - Process for manufacture of semiconductor devices - Google Patents

Process for manufacture of semiconductor devices

Info

Publication number
SG11201407168PA
SG11201407168PA SG11201407168PA SG11201407168PA SG11201407168PA SG 11201407168P A SG11201407168P A SG 11201407168PA SG 11201407168P A SG11201407168P A SG 11201407168PA SG 11201407168P A SG11201407168P A SG 11201407168PA SG 11201407168P A SG11201407168P A SG 11201407168PA
Authority
SG
Singapore
Prior art keywords
manufacture
semiconductor devices
semiconductor
devices
Prior art date
Application number
SG11201407168PA
Inventor
Diana Franz
Bastian Marten Noller
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201407168PA publication Critical patent/SG11201407168PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201407168PA 2012-05-07 2013-04-29 Process for manufacture of semiconductor devices SG11201407168PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261643385P 2012-05-07 2012-05-07
PCT/IB2013/053367 WO2013168047A1 (en) 2012-05-07 2013-04-29 Process for manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
SG11201407168PA true SG11201407168PA (en) 2014-11-27

Family

ID=49550248

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407168PA SG11201407168PA (en) 2012-05-07 2013-04-29 Process for manufacture of semiconductor devices

Country Status (8)

Country Link
US (1) US20150099361A1 (en)
EP (1) EP2847785A4 (en)
JP (1) JP2015521380A (en)
KR (1) KR20150008442A (en)
CN (1) CN104541361A (en)
SG (1) SG11201407168PA (en)
TW (1) TW201346018A (en)
WO (1) WO2013168047A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
JP6974336B2 (en) * 2016-02-16 2021-12-01 シーエムシー マテリアルズ，インコーポレイティド Polishing method for III-V materials
CN110437744A (en) * 2019-08-19 2019-11-12 福建华清电子材料科技有限公司 A kind of preparation method of the polishing fluid for aluminium nitride chip polishing

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2248719A1 (en) * 1972-10-04 1974-04-11 Alexandr Serafimowits Artjomow Polishing solids esp semiconductors - using alkaline compsn contg silicon dioxide water, glycerol and org bases
US5746936A (en) * 1996-09-13 1998-05-05 Colgate-Palmolive Co. Hypochlorite bleaching composition having enhanced fabric whitening and/or safety benefits
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
KR100313573B1 (en) * 1999-02-19 2001-11-07 안복현 Composition for cmp polishing
US6488730B2 (en) * 1999-07-01 2002-12-03 Cheil Industries, Inc. Polishing composition
JP2001185514A (en) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Cmp abrasive and method for polishing substrate
SG90227A1 (en) * 2000-01-18 2002-07-23 Praxair Technology Inc Polishing slurry
US6299795B1 (en) * 2000-01-18 2001-10-09 Praxair S.T. Technology, Inc. Polishing slurry
US7294211B2 (en) * 2002-01-04 2007-11-13 University Of Dayton Non-toxic corrosion-protection conversion coats based on cobalt
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
TWI355408B (en) * 2003-10-27 2012-01-01 Dupont Air Prod Nanomaterials Aluminum abrasive for chemical mechanical polishin
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
US7223156B2 (en) * 2003-11-14 2007-05-29 Amcol International Corporation Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces
WO2005047410A1 (en) * 2003-11-14 2005-05-26 Showa Denko K.K. Polishing composition and polishing method
JP2005294661A (en) * 2004-04-02 2005-10-20 Hitachi Chem Co Ltd Polishing pad and polishing method using the same
US7582127B2 (en) * 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
JP2007103463A (en) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd POLISHING SLURRY, SURFACE TREATMENT METHOD OF GaxIn1-xAsyP1-y CRYSTAL, AND GaxIn1-xAsyP1-y CRYSTAL SUBSTRATE
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers
WO2008013226A1 (en) * 2006-07-28 2008-01-31 Showa Denko K.K. Polishing composition
TWI402335B (en) * 2006-09-08 2013-07-21 Kao Corp Polishing composition
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
WO2009046296A1 (en) * 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
JP5255305B2 (en) * 2008-03-27 2013-08-07 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device
US20110027997A1 (en) * 2008-04-16 2011-02-03 Hitachi Chemical Company, Ltd. Polishing liquid for cmp and polishing method
US8980113B2 (en) * 2009-03-13 2015-03-17 Saint-Gobain Ceramics & Plastics, Inc. Chemical mechanical planarization using nanodiamond
KR20130029441A (en) * 2009-08-19 2013-03-22 히타치가세이가부시끼가이샤 Polishing solution for cmp and polishing method
KR20130041084A (en) * 2010-06-18 2013-04-24 히타치가세이가부시끼가이샤 Polishing liquid for semiconductor substrate and method for producing semiconductor wafer
JP5141792B2 (en) * 2010-06-29 2013-02-13 日立化成工業株式会社 CMP polishing liquid and polishing method
US8828874B2 (en) * 2011-03-28 2014-09-09 Sinmat, Inc. Chemical mechanical polishing of group III-nitride surfaces

Also Published As

Publication number Publication date
CN104541361A (en) 2015-04-22
JP2015521380A (en) 2015-07-27
TW201346018A (en) 2013-11-16
US20150099361A1 (en) 2015-04-09
EP2847785A1 (en) 2015-03-18
EP2847785A4 (en) 2016-03-16
KR20150008442A (en) 2015-01-22
WO2013168047A1 (en) 2013-11-14

Similar Documents

Publication Publication Date Title
GB2504593B (en) Method of forming silicon
TWI563614B (en) Methods of forming semiconductor packages
IL242411B (en) Methods of manufacturing hemostatic devices
EP2602824A4 (en) Process for production of semiconductor device
EP2793251A4 (en) Production method for semiconductor device
EP2790208A4 (en) Production method for semiconductor device
EP2793268A4 (en) Method for manufacturing semiconductor device
EP2677539A4 (en) Semiconductor device and process for manufacture thereof
TWI562366B (en) Manufacturing method of semiconductor device
EP2790209A4 (en) Manufacturing method for semiconductor device
GB2510468B (en) Substrates for semiconductor devices
TWI563540B (en) Semiconductor device manufacturing method
EP2824696A4 (en) Semiconductor device and method of manufacture thereof
EP2884522A4 (en) Semiconductor device producing method
EP2913843A4 (en) Semiconductor device manufacturing method
GB201120696D0 (en) Production of mono-cystalline silicon
ZA201308982B (en) Cooling of semiconductor devices
SG2013062914A (en) Methods of treating a semiconductor layer
EP2897166A4 (en) Method for manufacturing semiconductor device
EP2843686A4 (en) Method of manufacturing bonded wafer
HK1199903A1 (en) Improved method for manufacture of macrobeads
HK1205097A1 (en) Process for the production of methylbutinol
GB2503576B (en) Control of semiconductor devices
SG11201407168PA (en) Process for manufacture of semiconductor devices
EP2869330A4 (en) Method for producing semiconductor device