TWI355408B - Aluminum abrasive for chemical mechanical polishin - Google Patents

Description

1355408 (1) Description of the Invention [Technical Field] The present invention relates to a method for producing an alumina honing agent for chemical mechanical polishing, and to the use of the honing agent in chemical mechanical polishing. [Prior Art] Conventional polishing systems and polishing methods are generally not entirely satisfactory in planarizing semiconductor wafers. In particular, the polishing composition and polishing pad can have a polishing rate lower than desired, and their use in chemical mechanical polishing of semiconductor surfaces can result in poor surface quality. Since the performance of a semiconductor wafer is directly related to the flatness of its surface, it is extremely important to use a polishing composition and method that produces high polishing efficiency 'homogeneity and removal rate, resulting in high quality polishing with minimal surface defects. The difficulty in creating an efficient polishing system for semiconductor wafers comes from the complexity of semiconductor wafers. A semiconductor wafer generally includes a substrate on which a plurality of transistors are formed. The integrated circuit is chemically and physically attached to the substrate by patterning the regions in the substrate and the layers on the substrate. In order to produce an operational semiconductor wafer and maximize wafer yield, performance and reliability, it is desirable to polish the selected surface of the wafer without adversely affecting the underlying structure or shape. In fact, if the program steps are not performed on a properly planarized wafer surface, various problems can occur in semiconductor fabrication. In this case, EKC Technology, Inc. (hereinafter referred to as "EKC") has developed various chemical mechanical polishing (2) (2) 1355408 and/or residue removal compositions and methods suitable for integrated circuit fabrication. Put it on the market. Some of these compositions and methods can also be used to remove photoresist, polyimide or other polymer layers from the substrate in the fabrication of integrated circuits, and EKC has also been developed specifically for use in integrated circuit fabrication. The composition and method of removing the polymer layers from the substrate. In addition, EKC has developed various compositions and methods for selectively removing specific substrate compositions from the surface of the substrate at a controlled rate. These compositions and methods are disclosed in the following joint grants:

U.S. Patent No. 6,367,486 to Lee et al., issued Apr. 9, 2002, entitled: Ethylenediaminetetraacetic acid or its ammonium salt semiconductor processing residue removal method;

U.S. Patent No. 6,313,039 to Small et al., November 2001, issued under the title: Chemical Mechanical Polishing Compositions and Methods:

U.S. Patent No. 6,276,372 to Lee, issued Aug. 21, 2001, entitled: The use of a hydroxylamine-decanoic acid composition;

U.S. Patent No. 6,25,1,50, issued to, et al., issued Jan. 26, 2001, entitled: Slurry Composition and Chemical Mechanical Polishing Method Using the Same;

US Patent No. 6,248,704 to Small et al., issued Jan. 19, 2001, entitled: Compositions for Organic and Plasma Residue Residues for Chapel Semiconductor Devices:

U.S. Patent No. 6,242,400 to Lee, issued Jan. 5, 2001, entitled: A method of stripping photoresist from a substrate using hydroxylamine and an alkanolamine;

Cheng et al., U.S. Patent No. 6,235,693, May 2001 (3) (3) 1355408, issued on the 22nd, entitled: The internal guanamine composition for the organic and plasma etching residues of a semiconductor device; U.S. Patent Nos. 6,1,87,73 and 6,221,818, all of which were issued on February 13, 2001 and April 24, 2001, respectively, entitled: Hydroxylamine-Citrate Compound Composition Things and methods:

Small US Patent No. 6,156,661, issued on December 5, 2000, entitled: Post-cleaning;

U.S. Patent No. 6,140,287 to Lee, issued Aug. 31, 2000, entitled: </ RTI> </ RTI> </ RTI> <RTIgt;

U.S. Patent No. 6,121,217 to Lee, issued Sep. 19, 2000, entitled: Alkanolamine Semiconductor Processing Residue Removal Composition and Method;

Small, et al., U.S. Patent No. 6,1, 7,783, issued September 12, 2000, entitled: Chemical Mechanical Polishing Compositions and Methods;

U.S. Patent No. 6,110,881 to Lee et al., issued Aug. 29, 2000, entitled: A cleansing solution containing a nucleophilic amine compound having reducing and oxidizing potential;

Lee's U.S. Patent No. 6,000,411, issued December 14, 1999, issued the title of: a clean composition for removing etch residues and a method of use;

Small U.S. Patent No. 5,981,454, issued November 9, 1999, entitled: Cleansing Composition After Containing Organic Acids and Hydroxylamines; -6- (4) (4) 1355408

U.S. Patent No. 5,911,835 to Lee et al., issued June 15, 1999, entitled: Method of removing engraved residue;

U.S. Patent No. 5,902,780 to Lee, issued May 11, 1999, entitled: The sizing composition for removing etch residues and the method of use;

U.S. Patent No. 5,891,205 to Picardi et al., issued June 6, 1999, entitled: Chemical Mechanical Polishing Composition;

U.S. Patent No. 5,672,577 to Lee, issued Sep. 30, 1997, entitled: The removal of an etch residue by a hydroxylamine, an alkanolamine and a chelating agent;

U.S. Patent No. 5,4,82,566 to Lee, issued Jan. 9, 1996, entitled: A method of removing an etch residue using a composition containing a hydroxylamine;

U.S. Patent No. 5,399,464 to Lee, issued March 21, 1995, entitled: Triamine Positive Photoresist Stripping Composition and Post Ion Implant Baking;

U.S. Patent No. 5,381,807 to Lee, issued Jan. 17, 1995, entitled: The use of hydroxyamine and alkanolamine to strip photoresist from a substrate;

U.S. Patent No. 5,334,332 to Lee, issued on August 2, 1994, entitled: The singular composition for removing uranium engraving residues and methods of use;

U.S. Patent No. 5,279,771 to Lee, issued Jan. 18, 1994, entitled, the disclosure of the disclosure of the disclosure of the entire disclosure of

U.S. Patent No. 4,824,763 to Lee, issued April 25, 1989, issued to the Official Utility No.

U.S. Patent No. 4,395,348 to Lee, issued July 26, 1983, entitled: Photoresist Stripping Compositions and Methods. The entire disclosure of all EKC announcements is incorporated herein by reference. These compositions have been substantially successfully applied in integrated circuit fabrication applications. Compositions and methods for planarizing or polishing a substrate surface, particularly for chemical mechanical polishing (CMP), are well known in the art. The polishing composition (also referred to as polishing slurry) typically contains a honing agent material in an aqueous solution which is applied to the surface by contacting the surface with a polishing pad saturated with the polishing composition. Typical honing agent materials include cerium oxide, cerium oxide, oxidized oxidizing, zirconium oxide and tin oxide. Alternatively, the honing agent material can be incorporated into the polishing pad. The use of a polishing pad having a surface texture or pattern is disclosed in U.S. Patent No. 5,48,2, 3, the disclosure of which is incorporated herein by reference. All references, including publications, patent applications, and patents, are hereby incorporated by reference in their entirety in their entirety in the the the the the the In the case of Rongming 3, the invention is invented in the case of the machine-assisted forming: the method of arranging the aluminum in the step of argon, and the formation of the smoke method. Chemical liquid mist honing liquid crystal light of aluminized oxygen

The smoke temperature is low and the A-halogen is contained and the aluminized oxygen contains a package containing the firecracker. The flame is quenched and the hydrogen is dissolved in the oxygen and oxygen. The sputum is reduced by the highest temperature of the fireworks. The number of shots is measured by the amount of helium (11) (11) 1355408. Any combination of filtration and/or centrifugation is considered to be an embodiment of the invention. The present invention also encompasses any combination of the foregoing embodiments, including other combinations of the presently disclosed embodiments, which are compatible with each other and also include the products made by the foregoing embodiments. The present invention, in one embodiment, includes a method of chemical mechanical polishing of a substrate comprising the steps of: A) providing a polishing slurry comprising: an oxidizing agent; a diluent; and a fumed r-alumina honing agent, wherein the aerosol r alumina is formed by a low-temperature smoking method and is followed by wet honing, wherein the aerosol-like alumina has a value of about 0 before wet honing. 06 microns and about 0. An average particle size d5〇 between 25 microns, and wherein the wet honing of the fumed r-alumina honing agent has an average d5Q between about 60% and 80% of the D5Q particle size before wet honing, It is about seven times lower than the d5Q particle size of the honed alumina. 9 particle size, and an average specific surface area from about 50 m 2 /g to about 160 m 2 /g; B) providing a substrate having a surface comprising a metal, a metal-containing material, or both; and C) removing The slurry is in movably contacting the surface under conditions of a portion of the metal, the metal-containing material, or both. In an alternative embodiment, the substrate comprises at least one of copper, aluminum or tungsten; wherein the fumed r-alumina is formed by oxidizing a mixture comprising A1C13 and/or A1 F3, oxygen and a quenching gas. The quenching gas of -14-(12) (12)1355408 is sufficient to maintain a maximum flame temperature of about 400 ° C to about 850 ° C, and wherein the fumed r-alumina is contained in the total alumina honing agent At least 99% by weight of the 7 aluminum oxide by weight; and wherein the slurry is substantially free of the wet honing salt additive. In an alternative embodiment, the 7 oxidation is formed by a partial quenching atomization process performed at a temperature of from about 600 ° C to about 80 (wherein the r alumina system has from about 80 m 2 /g to about 120) Specific surface area of m 2 / gram. In an alternative embodiment, the diluent comprises water, and wherein the step of providing a polishing slurry comprises providing an alumina slurry comprising water and an alumina honing agent to provide an oxidizing agent in the form of an aqueous solution. And mixing the r alumina slurry and the oxidant aqueous solution. In an alternative embodiment, the r alumina slurry comprises about 〇. From 1% by weight to about 25% by weight of the fumed alumina honing agent, wherein the r alumina slurry has a chlorine content of from about 20 ppm to about 34 ppm per weight percent r alumina in the r alumina slurry. In an alternative embodiment, the r alumina itself has a chlorine content between 20 and 34 ppm by weight of the r alumina, regardless of the leaching amount. In an alternative embodiment, the 7 alumina itself has a chlorine content of between 20 and 34 ppm by weight of the r alumina. In an alternative embodiment, the r alumina slurry is substantially composed of 7 alumina, water, and about 0. 0001% by weight to about 0. It is composed of 2% by weight of an acid sufficient to bring the pH of the alumina slurry to between about 3 and about 6. In an alternative embodiment, the r alumina slurry is substantially composed of alumina, water, and about 0. 0001% by weight to about 〇. 1% by weight of acid, the acid is sufficient to bring the pH of the alumina slurry to about 3. 6 and about 4. Between 4 and wherein the mixing of the r alumina slurry and the oxidant aqueous solution is carried out at the time of use. The present invention also encompasses any combination of the foregoing embodiments, including other combinations of the embodiments disclosed in the -15-(13) (13) 1355408, as long as the requirements of the various embodiments combined are compatible with each other. The present invention, in one embodiment, includes a method of chemical mechanical polishing of a substrate comprising the steps of: providing an alumina slurry comprising a diluent and a fumed r-alumina honing agent material, wherein the aerosol-like 7 alumina system Formed by a low temperature aerosolization method, and wherein the recovered fumed alumina has a specific surface area of between about 8 mm 2 /g and about 120 m 2 /g, and has a ratio of about 0. 06 micrometers and about 0. The D5() particle size between 25 microns, the recovered fumed r-alumina is then honed to reduce its aggregates into smaller aggregates, so that the honed 7 alumina has a pre-honing The average D5 〇 particle size between about 60% and 80% of the original D5 〇 particle size, and the honed tau alumina has an average D99 which is about seven times lower than the D5Q particle size of the honed alumina. . 9 particle size, and wherein the honing system is a wet honing method in which substantially no honing additive is used; a polishing accelerator is mixed into the alumina slurry when used to form a polishing slurry; provided with a dielectric material And a substrate of the surface of the metal, the metal-containing material, or both: and the slurry is in movably contacted with the surface under conditions to remove a portion of the substrate. In an alternative embodiment, the alumina slurry comprises water, 7 alumina, and one or more of phosphoric acid, sulfuric acid, and nitric acid. In an alternative embodiment, the alumina slurry consists essentially of water, r alumina, and one of -16-(14)(14)1355408 or a plurality of phosphoric acid, sulfuric acid, and nitric acid. In an alternative embodiment, the substrate comprises copper, tungsten or both. The present invention also encompasses any combination of the foregoing embodiments, including other combinations of the presently disclosed embodiments, as long as the requirements of the various embodiments combined are compatible with each other. The present invention, in one embodiment, includes a method of chemical mechanical polishing of a substrate comprising the steps of: providing a polishing slurry comprising an oxidizing agent, a diluent, and a fumed T alumina honing agent material, wherein the aerosol-like alumina is used A low temperature aerosolization method is formed, and wherein the recovered aerosolized alumina is between about 〇. 〇6 microns and about 0. The d5G particle size between 25 microns, the recovered fumed r-alumina is then honed to reduce its aggregates into smaller aggregates, so that the honed r-alumina has the original d5Q before honing An average d5G particle size between about 60% and 80% of the particle size, and such that the honed r-alumina has an average d99 of about seven times the d5G particle size of the honed alumina. 9 particle size, and wherein the honing system is a wet honing method in which a grinding additive salt is added and subsequently substantially removed from the polishing slurry; a substrate having a surface comprising a metal, a metal-containing material, or both is provided: And movably contacting the slurry with the surface under conditions that remove a portion of the metal, the metal-containing material, or both. The present invention also encompasses any combination of this embodiment and other presently disclosed embodiments, as long as the requirements of the various embodiments combined are compatible with one another. The present invention, in one embodiment, includes a method of chemical mechanical polishing of a substrate comprising the steps of: -17- (15) (15) 1355408 providing polishing comprising an oxidizing agent, a diluent, and a fumed r-alumina honing agent material a slurry in which the smoky 7 alumina is formed by a low-temperature aerosolization method, and wherein the recovered fumed alumina is between d6C particle size of about 6 μm and about 25 μm, and is recovered. The fumed r-alumina is then honed to reduce its aggregates to smaller aggregates such that the honed r-alumina has about 60% and 80% of the original d5G particle size prior to honing. The average d5Q particle size, and the honed r alumina has an average d99 of about seven times the d5G particle size of the honed alumina. 9 particle size, and wherein the honing system is a wet honing method in which no wet honing additive salt is added; a substrate having a surface comprising a metal, a metal-containing material, or both; and the slurry The surface is in movably contacted with a portion of the metal, metal containing material, or both removed. The present invention also encompasses any combination of this embodiment and other presently disclosed embodiments, as long as the requirements of the various embodiments combined are compatible with one another. The present invention, in one embodiment, includes a method of chemical mechanical polishing of a substrate comprising the steps of: providing a polishing slurry comprising a diluent and a fumed r-alumina honing agent material, wherein the aerosol-like alumina is cooled by a low temperature The aerosolization method is formed, and wherein the recovered fumed 7 alumina system has a specific surface area of between about 80 m 2 /g and about 120 m 2 /g and has a ratio of about 0. The D5Q particle size between 06 microns and about 25 microns, the recovered fumed T-alumina is then honed to reduce its aggregates into smaller aggregates, allowing the honed -18- (16) 1355408 r alumina has an average D5Q particle size between about 60% of the original d5 〇 particle size before honing, and the honed 7 alumina has a D5 〇 particle size of the honed alumina. About seven times the average D99. 9 granules and wherein the honing system is a wet honing method in which a grinding additive is used and substantially free of self-grinding honing agent product is removed; a polishing accelerator is mixed into the oxidizing liquid when used to form a polishing slurry; Providing a substrate having a dielectric material and a metal, a metal-containing material or a surface thereof; and contacting the slurry with the surface to remove a portion of the substrate. The present invention also encompasses any combination of this embodiment and other presently disclosed examples, as long as the requirements of the various embodiments are combined with each other. The present invention includes, in one embodiment, a chemical mechanical polishing substrate method comprising the following steps Providing a slurry comprising a diluent and a fumed r alumina honing agent material, wherein the fumed gamma alumina is formed by a low temperature aerosolization method and wherein the recovered fumed 7 alumina system has a relationship of about 80 meters and a specific surface area between about 120 m 2 / gram and having a ratio of about 0. 06 and about 0. D5G particle size between 25 microns, recovered by smog 7 oxidized honing to reduce its aggregates to smaller aggregates, such that the yttrium 7 alumina has an approximate D5G particle size prior to honing An average D5C particle size of between 60% and between, and the honed r-alumina has an average D99 of about seven times the D5 〇 particle size of the honed alumina. 9 granules and wherein the honing system is a honing additive and is 80% lower than the diameter of the honing, and is carried out dynamically by the bismuth aluminum paste! Polished into 2/g micron aluminum with 80% lower than the diameter of the grinding, honing -19- (17) (17) 1355408 agent product is added to the polishing slurry before the honing honing agent a wet honing method for product removal; mixing a polishing accelerator into the alumina slurry for forming a polishing slurry; providing a substrate having a surface comprising a dielectric material and a metal, a metal-containing material, or both; And movably contacting the slurry with the surface under conditions to remove a portion of the substrate. The present invention, in one embodiment, includes a method of making an alumina honing agent for chemical mechanical polishing, wherein the honing agent is comprised of r alumina formed in a low temperature aerosolization process, water sufficient to maintain a pH below In a slurry of about 7 acid, the slurry does not significantly settle in 8 to 24 hours. Preferably, the alumina is wet honed without the use of a wet honing salt additive. The present invention includes a method of chemical mechanical polishing of a substrate, wherein the substrate comprises a metal or a metal-containing compound, and the method comprises adding a plurality of ceramsite alumina particles of the present invention to a polishing slurry, and subjecting the slurry to The surface of the substrate is contacted under conditions of controlled chemical mechanical polishing. The alumina honing agent can be used on all substrates, especially in the present invention, but is particularly preferred for use on substrates comprising copper and/or tungsten. The alumina honing agent of the present invention is mainly made of r alumina, for example, by an aerosolization method. The alumina honing agent typically has an alumina fraction of at least about 80%, preferably at least about 90%, and more preferably at least about 99%, such as about 100% relative to the total weight of the alumina honing agent. weight%. -20- (19) (19) 1355408 may advantageously be wet honed, which separates agglomerates/aggregates/larger particle sizes in the slurry to form smaller product average particle sizes. Preferably, the honing method uses a horizontal mill having ceramic beads in an amount sufficient to reduce the aggregates into smaller aggregates of alumina particles. Usually, the preferred addition is between 0. A salt of between 5% and about 5%, such as ammonium nitrate, aluminum nitrate, nitric acid or a mixture thereof, is used in the slurry to be wet-honed, as this aids in honing and slurry operations. In the wet honing method, the honing additive usually exists, for example, as low as about 0. A concentration of from 5% by weight to up to about 5% by weight. For example, the honing additive may be present at about 0. A concentration of from 5 to about 4%, or from about 1% to about 4% by weight. Typically, the honing additive can include a metal compound (e.g., a nitrate such as aino3), a non-metal compound (e.g., nitric acid such as nh4no3), or a combination thereof. Moreover, the honing additive is generally not removed and is substantially included in the honing agent after honing. In one embodiment, the alumina honing agent of the present invention can be honed using a wet honing method that houses a honing additive that is not substantially removed. One of the major advantages of including a honing additive in the honing process is to aid in honing the honing agent more quickly, more controlled (particle size distribution) and/or more completely (smaller average particle size). However, it has been surprisingly found that one of the major disadvantages of the honing additive is that it is present in the honing agent and thus is present in the polishing slurry of the present invention, which can result in settling, increased sedimentation, and/or accelerated honing agent in the polishing slurry. The sedimentation rate in the middle. The preferred embodiment of the invention is honed in the absence of nitrate during honing. The slurry substantially free of the system contains less than about 0.5% by weight of nitrate to less than about 0. 2% nitrate is preferred 'eg less than 0. 05% -22- (20) (20) 1355408 Nitrate or no nitrate added. In one embodiment, a sulfate may be added, but the preferred slurry still contains about 0. 5 wt% sulfate, to less than about 〇. 1% sulfate is preferred, for example less than 0. 05% sulphate or no sulphate. In another embodiment, phosphate may be added, but the preferred slurry still contains about 0. 5 wt% of the diacid salt, preferably less than about 0. 1% of the diacid salt, for example less than 0. 05% phosphate, or no phosphate added. In one embodiment, the total concentration of salts (including nitrates, sulfates, phosphates, or mixtures thereof) in the aqueous slurry of the alumina honing agent is between about 100 ppm and about 60 0 ppm'. Between about 2〇〇ppm and 400ppm. It has been found that wet honing in the absence of added salt provides a polishing slurry with better settling characteristics, such as substantially no settling during conversion, and no agitation tank within 2 days. There is less than about 20% solids sedimentation. Thus, in alternative wet honing methods, the honing additive can be substantially removed from the honing agent after honing but before the honing agent is included in the polishing slurry of the present invention. Removal of such honing additives can be accomplished by methods known in the art, such as single or multiple centrifugation and rinsing steps. The advantage of removing the honing additive advantageously overcomes the settling problem of the polishing slurry containing the honing additive, thereby effectively eliminating settling, reducing the amount of settling, and/or slowing the settling rate of the honing agent in the polishing slurry. Therefore, in another embodiment, the alumina honing agent of the present invention can be honed using a wet honing method in which a honing additive is added, which is substantially removed before the honing agent is added to the polishing slurry of the present invention. . In an embodiment of the alternative method, the slurry may be wet honed using one or more salt additives, using a -23-(21) (21) 1355408 subsequent stripping method including, for example, filtration and/or centrifugation, to Remove the main salts. Such washing, as is known in the art, may involve the addition of small amounts of acid and/or base to lower the zeta potential and destroy the boundary layer surrounding the particles. In another alternative wet honing method, substantially no honing additive is used, for example, such that the honing method is carried out with a honing agent only in a diluent medium such as water. Although the wet honing method takes a long time to reduce the average particle size and/or narrows or widens the particle size distribution compared to the wet honing method containing the honing additive, as described above, in the polishing slurry The disadvantages of countering settlement are still favorable. Thus, in another embodiment, the alumina honing agent of the present invention can be honed using a wet honing method that does not substantially contain a honing additive. Even in this embodiment, the washing, including filtration and/or centrifugation, removes the honing fines of the sub-sized particles, resulting in a generally desired finer particle size distribution in the final product. The alumina in the wet honed slurry may advantageously have an average D5q of between about 60% and about 80% of the original D5C prior to honing, with an average D99. Preferably, 9 is less than about seven times, more preferably less than 5 times, more preferably less than 3 times the average D5 经 of the ground honing agent. The alumina may preferably have a specific surface area preferably between about 50 m2/g and about 160 m2/g, such as between about 80 m2/g and about 120 m2/g or about 100 m2. /g. This alumina has unexpectedly been found to provide hardness and/or texture that provides better substrate removal rate/uniformity than conventional aerosolized alumina honing agents. The alumina honing agent of the present invention can be used as a component of a CMP slurry. 7 The amount of alumina in the CMP slurry can be compared with the weight of the slurry -24- (22) (22) 1355408 by about 0. 01% by weight to about 25% by weight, but preferably about 0. 1% by weight to about 1% by weight, for example about 0. 5 wt% to about 5 wt. /. . Preferably, the alumina may be included in an alumina slurry which is blended with other ingredients, such as an oxidizing agent, while the alumina also contains an oxidizing agent and a selective chelating agent, a rheological agent, a surfactant, a corrosion inhibitor. And the premixed slurry of its kind is stable. When the alumina slurry is mixed with other ingredients to form a CMP slurry during use, the alumina slurry prior to mixing preferably comprises or consists essentially of water and at a weight of the alumina slurry prior to use. 0. 000 1% by weight and about 0. 1% by weight of an acid (for example, nitric acid). Usually, the amount of acid is sufficient to provide about one. 5 to about 6. 8 of the slurry pH, for example between about 3 and about 6 or between about 3. 6 and about 4. Between 4. The chlorine content of the alumina slurry (e.g., after wet honing) is determined by the amount of alumina in the slurry, and is typically about 10 ppm to about 40 ppm of oxidation per weight percent in alumina violet. For example, about 18 ppm and about 34 ppm. Thus, in a preferred embodiment, there may be between about 180 ppm and about 260 ppm chlorine in the 10% oxidation priming solution. This amount is substantially higher than found in other aerosolized alumina slurries. In an alternative embodiment, the r alumina itself has a chlorine content between 10 and 40 ppm or between 18 and 34 ppm by weight of the 7 alumina, independent of the leaching amount. In addition, it is preferred that the amount of chlorine is reflected in the composition of the alumina because a portion (usually the majority) of the chlorine is dissolved from the solid substrate during operation and honing operations, reflecting that the solids contain higher levels of aerosolization than prior art. The amount of chlorine in aluminum. Of course, in alternative embodiments using a washing step, the amount of chlorine can be raised or lowered by -25-(23)(23)1355408. In one embodiment, the total concentration of the nitrate, sulfate, phosphate or mixture thereof in the aqueous slurry of the alumina honing agent is between about 100 ppm and about 600 ppm, such as between about 200 ppm and Between 400 ppm. Alternatively or additionally, the total concentration of the organic acid containing no chlorine (eg, nitrate, sulfate, phosphate or a mixture thereof) in the aqueous slurry of the alumina honing agent is between about 100 ppm and about 2000 ppm. Between, for example, between about 400 ppm and 1500 ppm. The use of alumina slurries provides materials that are particularly suitable for use in substrates such as semiconductors, magnetic and/or optical read or read/write heads, hard drives or other memory storage media, and for polishing optical glass or optical including fiber optics. Grinding material. Specific embodiments and alternative embodiments of the invention are discussed below. [Embodiment] The present invention includes a method of chemical mechanical polishing of a substrate, such as a semiconductor, magnetic and/or optical reading or reading/writing head, a hard disk or other memory storage medium, optical glass. Or a material of a fiber optic device, the method comprising the steps of: providing a polishing slurry comprising water, a polishing accelerator, typically one or more oxidizing agents, and an alumina honing agent material of the invention or substantially consisting of the foregoing Composition or composition thereof: providing a substrate having a surface comprising at least one of a metal, a metal compound such as a metal nitride, a metal oxide, and/or a dielectric material; -26-(24)(24)1355408 and The polishing slurry is in movably contacted with the surface under conditions in which a portion of the substrate is removed by a chemical mechanical polishing method. In one embodiment, the step of providing the polishing slurry comprises providing an alumina slurry, providing an oxidizing agent, and mixing the two when in use and optionally mixing the water. The alumina slurry of the present invention may comprise or consist essentially of or consist essentially of an alumina honing agent, a pH controlling agent (e.g., an organic or inorganic acid or base), and water. Preferably, the alumina slurry composition contains about 10% T alumina; not more than about 0. 2% nitrate, including nitric acid, no more than about 340 ppm chlorine and/or no less than about 150 ppm chlorine, and the rest (about 90%) water. In an alternative embodiment, the r alumina itself has a chlorine content of between 150 and 340 ppm. The alumina slurry composition does not contain an oxidizing agent, but all oxidizing agent solutions can be preferably and individually added at the time of use. Preferably, the slurry composition has a P Η of from about 3 · 6 to about 4. Within the range of 4, or may be, for example, about 4. The slurry may additionally comprise other honing agents. Other such honing agent particles include, but are not limited to, colloidal cerium oxide, aerosolized cerium oxide, colloidal antimony trioxide, fumed antimony trioxide, colloidal alumina, zirconia, titania and/or It is coated with a metal or polymer coated particle (for example iron coated cerium oxide). The alumina is preferably substantially 7- and/or fused alumina, more preferably molten r-alumina. The method for forming the fused alumina of the present invention into a substantial r phase is an arc ash -27-(25) (25) 1355408 atomization method which is carried out at a temperature lower than that of the conventional aerosolization method. The arc aerosolization process begins by exposing aluminum chloride (eg, A1C13) to a mixture of water and oxygen to cause an oxidation reaction to form chloric acid (HC103), which ultimately results in a chlorine content that is higher than conventional alumina formation methods. The fused alumina particles. Or the aluminum chloride (eg, A1C13) may be exposed to hydrogen, water, and oxygen, and mixtures thereof. In an alternative embodiment, some or all of the A1C13 can be replaced with A1F3 to provide a high fluorine content rather than a high chlorine content. ^Alumina. In either case, the 7 alumina is preferably a high halogen content. The alumina may have a specific surface area in the range of from about 25 m 2 /g to about 500 m 2 /g, preferably from about 40 m 2 /g to about 300 m 2 /g, for example about 40 m 2 /g to About 150 m 2 /g, about 50 m 2 /g to about 25 0 m 2 / g, about 75 m 2 /g to about 175 m 2 / g, about 1 m 2 /g to about 300 m 2 / G, or about 80 m 2 /g to about 120 m 2 / g. The amount of a honing agent such as alumina in the slurry composition of the present invention may be about 0.  From about 1% by weight to about 30% by weight, to about 〇.  1% by weight to about j 5 % by weight is preferred, for example about 0.  1% by weight to about 5% by weight, about 5% by weight to about 15% by weight, about 1% by weight to about 8% by weight, about 8% by weight to about 12% by weight, about 1% by weight to about 7% by weight %, from about 1% by weight to about 1% by weight, or from about 0.5% by weight to about 3% by weight. When present in the slurry composition, the alumina particles typically form aggregates which may have about 0. 02 microns to about 0. The average diameter (or intermediate diameter D5 〇 ) of 4 microns is, for example, about 〇 · 〇 3 to about 〇.  3 microns, or about 〇 · 〇 3 microns to about 0. 15 microns' about 0. 1 micron to about 〇. 2 microns, about 0. 15 microns to about 0. 3 microns' about 0. 05 microns to about 〇. 25 microns, about 〇·〇5 microns -28- (26) (26)1355408 to about 0. 14 microns' or about 0. 08 microns to about 0. 2 microns. The aggregate formed may additionally or alternatively have a particle size distribution such that substantially all of the alumina aggregates have a maximum diameter or size of up to about 2 microns, preferably up to about 1 micron, such as up to about 0. 9 microns, the highest is about 〇. 7 micron' or up to about 0. 5 microns. In one embodiment, the alumina aggregate D&quot;. 9 is about 2 microns in diameter, preferably up to about 1 micron, for example up to about 0. 9 microns' is about 0. 7 microns, or up to about 〇. 5 microns. This means that in this embodiment, the alumina aggregate is not higher than about 0. 1% by weight has a diameter or size greater than about 2 microns, preferably greater than about 1 micron, such as greater than about zero. 9 microns, greater than about 〇. 7 microns, or greater than about 〇. 5 microns. The advantages of these size ranges are known in the art, as is known to vary the range of sizes that can be used for substrates of different densities, such as what degree of scratching is unacceptable, and which substrate removal rate is desired. The slurry composition of the present invention also advantageously includes a majority of the diluent. While the diluent is preferably aqueous and consists essentially of or consists of water, the diluent may also include other relatively non-reactive organic solvents. Examples of such solvents include, but are not limited to, pyrrolidone, such as N-methylpyrrolidone, argon, such as dimethyl sulphite, milled such as methyl sulphate, guanamine such as decylamine or dimethyl acetamide, Esters such as lactones, ethers such as tetrahydrofuran, glycols such as propylene glycol and the like, and combinations thereof. In a preferred embodiment, the slurry composition of the present invention is substantially free of organic solvents. The slurry composition of the present invention also advantageously includes a sufficient amount of a pH controlling agent. Typically, the pH of the slurry composition of the present invention can be adjusted in any suitable manner, such as by the addition of a pH adjusting agent, conditioning agent or buffer. The nitric acid system is a better pH control agent than -29-(27) (27) 1355408, and only sulfuric acid, phosphoric acid or any combination of the three may be used. Organic acids, including mono-, di-, and tricarboxylic acids, including, for example, citric acid, glycolic acid, oxalic acid, acetic acid, or any combination thereof, can be used in place of or in conjunction with the inorganic acid. The organic acid (and its salts such as its ammonium salt) provides the desired buffering capacity to the alumina slurry. Suitable pH buffering agents may include acids such as inorganic acids (e.g., nitric acid, sulfuric acid, phosphoric acid, and the like, and combinations thereof), organic acids (e.g., acetic acid, citric acid, malonic acid, succinic acid, tartaric acid, oxalic acid, Glycolic acid and its like, and combinations thereof, and combinations thereof. Other suitable pH adjusting agents, regulators or buffers may also include bases such as inorganic hydroxide bases (eg, sodium hydroxide, potassium hydroxide, ammonium hydroxide, and the like), organic hydroxide bases (eg, single -, di-, tri- or tetra-alkyl ammonium hydroxide, choline hydroxide, bis-choline hydroxide, tri-choline hydroxide and the like, and combinations thereof, carbonic acid Saline bases (such as sodium carbonate and the like), methyl methoxide, ammonia, and combinations thereof. The pH of the alumina slurry composition is typically acidic, e.g., less than about 7. In one embodiment, the pH of the slurry composition is preferably from about 1. 5 to about 6. 8, for example about 1 . 5 to about 3, about 5 to about 6. 8, from about 2 to about 6, from about 2 to about 4, from about 4 to about 6, from about 3 to about 5 or from about 3 · 5 to about 4. 7 ° The honing agent particles in the slurry composition of the present invention can form aggregates, especially when placed in an aqueous solution, even if the solution does not contain an oxidizing agent. However, it is generally desirable that the aggregates precipitate or settle out of solution quite rapidly. In one embodiment, the aggregate of the honing agent particles is not visually detectable, but is found to occur after -30-(28) 1355408 for at least about 18 hours (eg, by light scattering analysis), for example, the honing agent particles are placed in the The slurry composition is after at least about 24 hours, after about 24 to 48 hours, after at least about 30 hours, after to about 36 hours, after at least about 42 hours, or after at least about hours. In another embodiment, it has been found that aggregation of the honing agent particles occurs within about 96 hours of the placement of the honing agent particles into the slurry composition (e.g., by light scattering analysis), for example, within about 84 hours, at about 72 hours. Intrinsic within about 60 hours, or within about 48 hours. In a preferred embodiment, more than 5% of the solids in the hour do not cause aggregate formation which results in sedimentation, preferably no more than 1% solids. The slurry compositions of the present invention may be combined with any suitable (etc.) (or components (etc.)) known in the art, which may be present in the slurry or may be individually packaged for incorporation at the time of use. Other composition/component examples may include, but are not limited to, other non-r alumina honing agents, oxygen agents, hydroxyl-free amines, hydroxyl-containing amines (such as alkanolamines), catalyst film formers (eg, corrosion) Inhibitor), a complexing agent (such as a tongs), a rheology control agent, a surfactant (such as a surfactant), a stabilizer, a base or other acid for controlling pH, and other suitable components, and combinations thereof Things. However, in certain embodiments, the slurry composition may be substantially or may be comprised of honing agent particles, pH control agents, and diluents and/or may be substantially free of one or more of the other aforementioned ingredients or components unless otherwise There is a definition, otherwise the term used in the present invention is "substantially, at least about 99%, to at least about 9. 5 % is better, at least about 9. 9% better, for example at least about 99. 99%» In the preferred embodiment, the term "substantially" can be expressed in &gt; less 48. For example, 48 parts of the group, the aggregated product is shown as -31 - (29) (29) 1355408 Complete or about 1 〇〇%. Accordingly, the terms "substantially not" and "substantially free" as used herein are meant to contain no more than about 1%, and no more than about 0. 5 % is better, no higher than about 0. 1% is better, for example not higher than about 〇〇1%. In the preferred embodiment, the terms &quot;substantially no&quot; and &quot;substantially free&quot; may be individually indicated to be completely absent, or contain about 0°/. Specific ingredients (etc.) / components (etc.). The slurry composition of the present invention may optionally, but preferably, incorporate an individual oxidizing solution, and optionally an additional diluent, to form a c Μ P slurry blend. Preferably, the individual oxidizing solution contains the desired amount of oxidizing agent, and the particular agent and specific amount are preferably adjusted for planarization/polishing of a particular substrate and for a particular desired substrate removal rate. The individual oxidizing solution typically also contains a diluent which is not necessary if the CMP slurry blend contains and/or is added separately. In this case, the individual oxidizing solutions and/or selective diluents may contain one or more other ingredients/components as indicated above. However, in certain embodiments, the individual oxidizing solution may consist essentially or only of the oxidizing agent and the selective diluent and/or the diluent may be free of other ingredients/components. Similarly, in certain embodiments, the CMP slurry blend can consist essentially of or can be comprised of the slurry compositions of the present invention, individual oxidizing solutions, and selective diluents. Any suitable oxidizing agent can be used in the present invention, for example, in an oxidizing solution. Suitable oxidizing agents include, for example, oxidized halides (e.g., chlorates, bromates, iodates, perchlorates, perbromates, periodates, fluorochemicals, and the like) and mixtures thereof ), over compounds (such as perboric acid, periodic acid, periodate, perborate, percarbonate -32 - (30) (30) 1355408 salt, persulfate such as ammonium persulfate, peroxide, peroxygen Acids (such as peracetic acid, perbenzylic acid, m-benzoic acid, salts thereof, mixtures thereof, and the like), permanganates, and the like, and mixtures thereof, '5 xiao acid salt (eg, Shi Xiao Iron (III) acid, hydroxylamine nitrate and the like, and mixtures thereof, chromate, bismuth compound, ferricyanide (such as potassium ferricyanide), mixtures thereof, hydroxylamine, hydroxylamine derivatives and/or salts Classes (eg N-methyl-hydroxylamine, N,N-dimethyl-hydroxylamine, N-ethyl-hydroxylamine, N,N-diethyl-hydroxylamine, methoxyamine, ethoxylated amine, N -methyl-methoxyamine' and salts of hydroxylamine or hydroxylamine derivatives such as sulfates, nitrates, carbonates, phosphates, acetates and the like Compound). Suitable oxidizing agents may include a mixture of two or more of the foregoing oxidizing agents, for example, in a ratio of from about 1 Torr to about 1 :1 00. The amount of oxidant is generally between about 0 and the polishing slurry. 1% by weight and 25% by weight/〇, for example 1% by weight to 7% by weight. The polishing slurry and the alumina slurry may contain a chelating agent. Examples of chelating agents include, but are by no means limited to, mono-, di- or poly-hydroxybenzene type compounds such as, for example, phenol, resorcinol, butylated hydroxytoluene ("BHT") and the like. , or a combination thereof. In one embodiment, the chelating agent comprises three or more carboxylic acid-containing moieties such as, for example, ethylenediaminetetraacetic acid ("EDTA"), non-metallic EDTA salts (eg, mono-, di-, tri- or Tetraammonium EDTA or a combination thereof, or a combination thereof. Compounds containing two carboxylic acid moieties are less preferred. Compounds containing both a hydroxyl group and a carboxylic acid moiety can be used in one embodiment. An aromatic compound containing a thiol group, such as, for example, thiophenol; an amine carboxylic acid; a diamine such as ethylenediamine: a polyalcohol; a polyoxyethylene epoxide; a polyamine; a polyimine; or a composition thereof In the embodiment, -33-(31) (31)1355408 In one embodiment, one or more chelating agents may be used in a composition, wherein the chelating agent is selected from the group described above. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; The numbers are disclosed herein by reference. In one embodiment, the amount of the chelating agent present in the solution of the invention is about 〇.  1% to about 1 〇 %, or about 1% to about 1 〇 °/. , Joel.  5 % to about 5%, about 0 · 5 % to about 3%, about 0. From 1% to about 2%, from about 0.25% to about 〇75%, or from about 1% to about 3%. In an alternative embodiment, the composition is substantially free of tongs. The slurry may optionally contain a surfactant, for example, an epoxy-polyamine compound is present in the solution in an amount of about 0. 01% to about 3%, for example about 0. 1% by weight to about 0. 5 wt%. In an alternative embodiment, the composition is substantially free of surfactant. Preferably, the alumina slurry is substantially free of dissolved metals, particularly transition metals, e.g., the slurry contains less than about 50 ppm, preferably less than about 10 ppm of dissolved metal. A preferred diluent is water. In certain embodiments, one or more polar organic solvents may be used in place of between about 1% and about 1% by weight of water. The organic solvent can be polar or non-polar. Generally, nonpolar organic solvents are less preferred, and polar organic solvents such as high boiling alcohols and the like can be used. Thus, in one embodiment, the slurry of the present invention may be substantially free of non-polar organic solvents. Examples of polar organic solvents useful in the compositions of the present invention include, but are not limited to, dimethyl hydrazine, ethylene glycol, organic acid alkyl groups (e.g., -34-(32) (32) 1355408 G-C6) Esters such as ethyl lactate, ethylene glycol alkyl ether, diethylene glycol alkyl ether (such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc.; dimethyl ether, diethyl Ethyl ether, dipropyl ether, dibutyl ether, etc.: methyl ethyl diether, methyl propyl diether, methyl butyl diether, ethyl propyl diether, ethyl butyl diether, C Butyl diether and the like), triethylene glycol alkyl ether, propylene glycol, propylene glycol alkyl ether, dimethyl azide, N substituted pyrrolidone such as N-methyl-2-D-pyrrolidine Ketones (NMP), cyclobutyl hydrazine, dimethyl acetamide and the like, water (the present invention is considered to be a polar organic solvent) or any combination thereof. Dimethylacetamide and diethylene glycol alkyl ether (most notably diethylene glycol monobutyl ether) are preferred polar solvents. Others include amine compounds and / or alkanes. Alcoholamine compounds, such as two carbon atoms, are bonded to alkanolamines such as AEEA and the like. In an embodiment in which a polar organic solvent is present, the polar organic solvent has a boiling point of at least about 85 ° C, or at least about 90 ° C or at least about 9 VC » which should be used with caution, since no alkanolamines and the like are present. The specific organic solvent may be only slightly miscible with water (if present) in the dilute fluoride solution of the present invention. In one embodiment, at least one polar organic solvent is present in the polishing slurry and/or alumina slurry. It is preferably at least about 75% by weight of solvent, preferably at least about 85 weight percent per hydrazine, such as at least about 90% by weight or at least about 9.5 weight percent. In another embodiment, the total amount of polar organic solvent may range from about 75 wt% to about 99 wt%, or from about 90 wt% to about 95 wt%, or from about 96 wt% to about 99 wt%. The slurry composition and/or CMP slurry blend of the present invention can be used in any suitable substrate. In particular, the present invention can be used, in particular, for memory or hard-35-(33) 1355408 dish 'metals (eg, precious metals), interlayer dielectric junctions, semiconductor devices, semiconductor wafers, (MEM), ferroelectrics A mass, a magnetic head, a piezoelectric substance, a polymeric high dielectric constant (e.g., low-K and high-K) film, work or some combination thereof. Suitable substrates include, for example, gold, metal composites or mixtures thereof. The substrate may comprise or consist essentially of or consist of. Suitable copper, aluminum, titanium, tungsten, giant, gold, platinum, rhodium, ruthenium and their alloys or mixtures). The substrate may also comprise any suitable or substantially composed or consisting of it. Suitable metals include, for example, alumina, ceria, cerium oxide, cerium oxide, cerium oxide, cerium oxide, magnesium oxide, and mixtures thereof. In addition, the substrate may comprise or consist essentially of or consist of metal composites and metal alloys including, for example, metal tantalum nitride, titanium nitride and tungsten nitride, and metal carbides. (eg tungsten), nickel-phosphorus, aluminum-boron silicate, borosilicate glass (PSG), borophosphonate glass (BPSG), and bismuth/bismuth/carbon alloy. The substrate may also comprise any suitable or substantially composed or consisting of it. Suitable glass substrates such as single crystal germanium, polycrystalline germanium, amorphous germanium, and insulator may also be used in the present invention, including but not limited to various types of industrial glass, optical glass, and ceramics. The slurry composition of the present invention And/or CMP slurry blend I ( ILD ), micro-motor system film and low-grade or optical glass genus, metal oxidation of any suitable gold metal including, for example, a composition (eg, a metal oxide oxide-based titanium dioxide) And the metal complex formed by the product formed by the three together. Suitable materials (such as carbonitride and carbonization, phosphoric acid-released bismuth / antimony alloy, semiconductor material conductor substrate can be coated with gallium arsenide. Glass) technology It is known in the art to use -36-(34) (34)1355408 in a substrate comprising or consisting essentially of or consisting of copper, a copper alloy and/or a copper compound, which substrate may also contain a Or a barrier material known in the art, such as Ta, TaN, Ti, TiN, or a combination thereof. The slurry composition and/or CMP slurry blend of the present invention can be used to polish a substrate at any stage of substrate fabrication (eg, Any portion of a semiconductor device. For example, the present invention can be used to polish semiconductor devices in shallow trench isolation (STI) processing, such as, for example, U.S. Patent Nos. 5,498,565, 5,721,173, 5,93,5 05 and No. 6,0 1 9,806, or used to form an interlayer dielectric. Another aspect of the invention relates to a method of chemical mechanical planarization or polishing of a metal-containing (e.g., copper-containing) substrate, which is sufficient The substrate is contacted with the slurry composition of the present invention and/or the CMP slurry blend at a time and temperature at which the substrate is planarized, polished or smeared with a metal (e.g., copper and/or tungsten containing) surface. The method can include contacting the substrate with the slurry composition and/or CMP slurry blend of the present invention under movable conditions, wherein the slurry composition and/or CMP slurry blend is generally a substrate that moves relative to each other The substrate is polished and/or planarized with the pad. Suitable polishing pads can be used in the present invention. In particular, the polishing pad can be woven or non-woven and can comprise different densities, hardnesses, thicknesses, compressibility , Any suitable polymer for resilience and compression modulus at the time of compression. The polishing pad used in the present invention may preferably have about 0. 6 to about 0. A density of 95 g/cm 3 , a Shore A hardness of less than about 1 〇〇 (e.g., from about 40 to about 90), at least about 0. 7 5 mm (eg about 0. 7 5 to about 3 mm) thick -37- (35) 1355408 degrees 'about 〇 to about 1 〇% (by volume) of compressibility at least about 2 5 % after compression (by volume) (Example 1 00 Resilience of %) and/or at least about i 〇〇〇kPa 2 Examples of polymers for the polishing pad material may include (carbazate, polymelamine, polyethylene, polyester, olefinic ester, poly Acrylic acid, polypropylene decylamine, polyvinyl chloride, carbonate, polyamine, polyether, polystyrene, polypropylene hydrocarbon, and the like, and mixtures, copolymers, grafts thereof. The polishing comprising urethanes and/or the surface can be recognized from the use of such materials as the 'for example, using thermal sintering techniques. Furthermore, the mats can be substantially porous (for example with open or closed pores) The porous mat preferably has a pore volume of from about 1 to about 1 micron and from 15% to about 70%. The polishing pad and/or the degree of porosity or non-porosity of the sheet. Another preferred embodiment may comprise a porous Polished surface. Although the invention has been described with reference to certain preferred embodiments, it will be apparent that The present invention may be embodied and modified in other specific forms, structures, configurations, components, materials, and compositions without departing from the scope of the invention. It will be apparent to those skilled in the art that many modifications may be made to the materials originally used in the practice of the present invention without departing from the principles of the invention, at about 35 kPa, such as about 25% to about: compression. Modulus. Suitable for [not limited to) polyamine: bismuth, polyacetate, fluorinated, polyacrylic, fluorinated in a preferred embodiment. The polishing pad is formed by polishing of the appropriate technical material or substantially non- A plurality of apertures, and a: surface may also be any, the polishing pad, but the spirit of the present invention skilled in the art should clarify the use of other spirits or basic specific environments and practices, methods, and implementations disclosed. The present invention is therefore to be considered in all respects as illustrative and not restrictive

-39 -

Claims (1)

1355408 / .. . _ January / 曰 correction replacement! Annex 5A: Amendment to Patent Application No. 093132638 Amendment to the Republic of China on July 5, 100. Patent Application No. 1 - A method of providing an alumina mash slurry that can be used to form a chemical mechanical polishing slurry, the method comprising the steps of: A) providing fumed r alumina particles formed by a low temperature aerosolization method. The aerosolization method comprises oxidizing a gas mixture containing an alumina-containing halogen-containing gas, oxygen 'hydrogen and a quenching gas in a flame. 'The quenching gas content is sufficient to reduce the maximum flame temperature of the gas mixture measured at degrees Celsius to the highest flame obtained using the same mixture of alumina-containing halogen-containing gas and oxygen but no arson gas. 95% or less of the temperature, wherein the fumed r-alumina particles have an average particle diameter D50 between about 0.06 μm and about 0.25 μm, and B) form water containing and between 5 wt% and 50 wt% a pre-slurry of misty r particles between %; C) wet honing the oxidation under conditions such that the pre-slurry after honing comprises the following components Pre-slurry: a liquid component comprising water, from about 10 ppm to about 40 ppm of halogen per galle of alumina, and a halogen from a halogen-containing gas and an overall nitrate of less than about 2000 ppm; and an aerosol The solid content of the alumina particles has an average particle diameter D5 〇 between about 60% and 80% of the particle diameter D5Q before honing' and has a D99.9 which is about seven times lower than the honing particle diameter D5Q. Particle size; and 1355408 D) adjusting the water content and adding a pH adjusting compound to form an alumina mash slurry having a solid content of about 0.4 to 24% by weight of the aerosol-like alumina particles by weight of the slurry, and the liquid component having a ratio of about A pH of from 1.5 to about 6.8. 2. The method of claim 1, wherein the alumina-containing and halogen-containing gas system comprises A1X3, wherein X is a halogen selected from the group consisting of chlorine, fluorine or a mixture thereof, wherein the maximum flame temperature is about 400 ° C to The method of claim 2, wherein the quenching gas system comprises at least one of water vapor, noble gas or nitrogen, and wherein the highest flame temperature is about 6 〇〇 ° C to about 800 °C r and wherein the amount of halogen leached from 7 alumina in the liquid component of the wet honed pre-slurry is from about 18 ppm to about 34 ppm chlorine per weight percent alumina and/or Or the total amount of fluorine. 4. The method of claim 1, wherein the pre-honing average particle size D5G is between about 0.1 microns and about 0.2 microns, and wherein the liquid component of the pre-slurry comprises less than about 2000 ppm. Dissolve the weight of nitrate, sulfate and phosphate. 5. The method of claim 1, wherein the liquid component of the alumina mash slurry comprises less than about 4000 ppm of dissolved nitrate, sulfate, and a total amount of phosphate, acid, and alkali, and At a pH of from about 3 to about 6, and wherein the alumina has a specific surface area between about 50 m2/g and about 160 m2/g. 6. The method of claim 1, wherein the alumina 硏 -2- 1355408 The liquid component of the prize liquid comprises a weight of dissolved nitrate, sulfate and phosphate between about 100 ppm and about 1000 ppm, and wherein 7 alumina has a mass of between about 80 m 2 /g and about 120 m. The method of claim 1, wherein the liquid component of the alumina mash slurry comprises a total amount of aluminum nitrate and ammonium nitrate of less than about 600 ppm. 8. The method of claim 1, wherein the liquid component of the alumina mash slurry comprises between about 100 ppm and about 600 ppm of dissolved sulfate, and less than about 4000 ppm of dissolved salts, a total amount of an acid and a base, and wherein the alumina has a specific surface area of between about 50 m 2 /g and about 1 60 m 2 /g. 9. The method of claim 1, wherein the alumina The honing slurry comprises between about 100 ppm and about 600 ppm of dissolved phosphate, and wherein the 7 alumina has a specific surface area of between about 50 m2/g and about 160 m2/g. 10. A method of providing an alumina mash slurry that can be used to form a chemical mechanical polishing slurry, the method comprising the steps of: A) providing aerosolized 7 alumina particles formed by a low temperature aerosolization process, the aerosolization method comprising Oxidizing a gas mixture comprising an alumina-containing halogen-containing gas, oxygen, hydrogen, and a quenching gas in a flame, the quenching gas content being sufficient to reduce the maximum flame temperature of the gas mixture measured in degrees Celsius to Maximum flame temperature -3- 1355408 using the same mixture of alumina-containing and halogen-containing gases with oxygen but no quenching gas 95% or less, wherein the aerosol-like 7 alumina particles have an average particle diameter D50 between about 0.06 microns and about 0.25 microns: B) forming a pre-slurry containing water and containing 0.2% by weight And a liquid component of dissolved nitrate, sulfate, and phosphate as a honing additive, and a solid component containing a misty T particle of between 5% and 50% by weight; The wet honing of the alumina pre-slurry under conditions such that the average particle diameter d5Q of the aerosol-like alumina particles is reduced to between about 50% and 80% of the particle diameter D5Q before honing, wherein the honed particles have The average particle diameter D99.9 is less than about four times the diameter D5 of the honed, and has an average ratio of surface to surface between about 50 m 2 /g and about 1-6 60 m-2 /g. The liquid component of the alumina pre-slurry after wet honing comprises from about 10 ppm to about 40 ppm of total dissolved chlorine per liter of alumina per liter of alumina in the pre-slurry and/or Or fluorine, D) removing at least a portion of the dissolved salt from the liquid component of the pre-slurry, resulting in a total concentration of the salt Less than about 4000 ppm; E) adjusting the water content and pH adjusting compound, to form an aluminum oxide grinding slurry WH 'which comprises about 0.4 to 24 wt. /. The smog-like alumina particles, and having a method of from about 1.5 to about 6.8. 11. The method of claim 10, wherein the halogen-containing gas system comprises A1X3, wherein the X system is a halogen selected from the group consisting of chlorine, fluorine or a mixture thereof, wherein the highest flame temperature is from about 400 ° C to about 8 50 ° C. wherein the quenching gas system comprises at least one of water vapor, noble gas or nitrogen, and wherein the wet type is The amount of halogen in the eutectic slurry is from about 18 ppm to about 34 in each 5% by weight of alumina in the liquid component of the pre-slurry. The total amount of chlorine and / or fluorine between ppm. 12. The method of claim 10, wherein the pre-honing r average particle size D5 is between about 0.1 microns and about 0.2 microns, and wherein the honed r-alumina has a a specific surface area between 80 m 2 /g and about 120 m 2 /g, and wherein the liquid component of the alumina kneading slurry contains less than about 2000 ppm of dissolved nitrate, sulfate and phosphate, acid and alkali The total amount, and having a pH between about 3 and about 6. The method of claim 10, wherein the removal of the dissolved salt comprises the liquid portion and the ion of the honed pre-slurry. Exchange resin contact. 14. The method of claim 10, wherein the removing of the dissolved salt comprises washing the rinsing liquid by washing/rinsing the liquid and washing the rinsing liquid from the liquid component containing the dissolved salt. To physically separate the particles. 15. The method of claim 14, wherein the wash/leachate system has a pH of between 0.3 pH units of the isoelectric pH of the r alumina. 16. The method of claim 14, which comprises adding a polar organic solvent to the pre-slurry, to the wash/rinsing liquid, or both. 17. The method of claim 10, wherein the removing of the dissolved salt comprises washing the liquid by washing the liquid with the washing/rinsing liquid and washing the liquid component from the dissolved salt. Substantial separation of the grain 1355408 child. 18. The method of claim 17, wherein the wash/leachate system has a pH of between 0.3 pH units of the isoelectric pH of the 7 alumina. 19. The method of claim 17, which comprises adding a polar organic solvent to the pre-slurry, to the wash/rinsing liquid, or both. 20. The method of claim 17, further comprising removing a portion of the r alumina particles to narrow the particle size distribution of the retained r alumina particles. The method of claim 1, wherein the alumina of the slurry of the slurry is in the form of a 4-part system comprising a dissolved nitrate of between about 10 ppm and about 1 to about 0-ppm. , the weight of the sulfate and phosphate, and the total amount of aluminum nitrate and ammonium nitrate below about 600 ppm. 2 2. A method of chemically mechanically polishing a substrate, comprising the steps of A) providing a polishing slurry comprising: an oxidizing agent; a diluent: and a fumed r-alumina honing agent, wherein the aerosol-like r-alumina is borrowed Formed by a low temperature aerosolization process followed by wet honing, wherein the aerosolized alumina has an average particle size D5 介于 between about 0.06 microns and about 0.25 microns prior to wet honing, and wherein it is wet The honed smoke-like r-alumina honing agent has an average D5Q between about 60% and 80% of the D5 〇 particle size before wet honing, and about 7 times less than the D5G particle size of the honed alumina. a -6-D99.9 particle size, and an average specific surface area from about 50 m 2 /g to about 160 m 2 /g; B) providing a substrate having a surface comprising a metal, a metal-containing material, or both; And C) movably contacting the slurry with the surface under conditions in which a portion of the metal, the metal-containing material, or both are removed. 23. The method of claim 22, wherein the substrate comprises at least one of copper, aluminum or tungsten; wherein the aerosol 7 alumina comprises by containing A1C13 and/or A1F3, oxygen and quenching gas. The mixture is formed by oxidation, the amount of the quenching gas being sufficient to maintain a maximum flame temperature of about 4 Torr (Tc to about 85 (TC, and wherein the aerosol-like alumina is included in the total weight of the alumina honing agent) At least 99% by weight of r-alumina; and wherein the slurry is substantially free of a wet honing salt additive. 24. The method of claim 23, wherein the r-alumina is at about 600 °c A partial quenching aerosolization process is carried out at a temperature of about 800 ° C, wherein the 7 alumina system has a specific surface area of from about 80 m 2 /g to about 120 m 2 /g. 25. The method of claim 22 Wherein the diluent comprises water, and wherein the step of providing a polishing slurry comprises providing an alumina slurry comprising water and an alumina honing agent, providing an oxidizing agent in the form of an aqueous solution, and mixing the r alumina slurry and the oxidizing agent Aqueous solution. The method of claim 25, wherein the r alumina slurry comprises from about 0.1% by weight to about 25% by weight of a fumed alumina honing agent, wherein the chlorine content of the 7 alumina slurry is in the r oxidation Aluminum slurry 1355408 Each of the weight percent T oxidized bromine is from about 20 ppm to about 34 ppm. The method of claim 25, wherein the r alumina slurry consists essentially of 7 alumina, water, and about 0.0001% by weight to about 0.2% by weight of an acid sufficient to cause the alumina slurry The pH is between about 3 and about 6. The method of claim 25, wherein the T alumina slurry comprises r alumina, water and an acid of from about 0.0001% by weight to about 0.1% by weight, the acid being sufficient to introduce the pH of the alumina slurry Between about 3.6 and about 4.4, and wherein the mixing of the r alumina slurry and the oxidant aqueous solution is carried out at the time of use. A method for the preparation of a chemical-mechanical polishing substrate comprising the steps of providing an alumina slurry comprising a diluent and a fumed T alumina honing agent material, wherein the aerosol-like alumina is aerosolized by low temperature The method is formed, and wherein the recovered fumed aluminate has a specific surface area between about 8 mm 2 /g and about 120 m 2 /g, and has a D5 between about 0.06 μm and about 0.25 μm. The particle size of the ruthenium, the recovered fumed r-alumina is honed to reduce its aggregates into smaller aggregates, so that the honed r-alumina has a raw d5 〇 particle size before honing. An average D5() particle size between about 60% and 80%, and such that the honed r-alumina has an average 〇99 9 particle size that is about seven times lower than the D5G particle size of the honed alumina. And wherein the honing system is a wet honing method in which substantially no honing additive is used; and a polishing accelerator is mixed into the alumina slurry when used to form a polishing slurry -8 - 1355408 Providing a substrate having a surface comprising a dielectric material and a metal, a metal-containing material, or both; and movably contacting the slurry with the surface to remove a portion of the substrate. 30. The method of claim 29, wherein the alumina slurry comprises water, r alumina, and at least one selected from the group consisting of phosphoric acid, sulfuric acid, and nitric acid. 31. The method of claim 29, wherein the alumina slurry consists essentially of water, r alumina, and at least one selected from the group consisting of phosphoric acid, sulfuric acid, and nitric acid. 32. The method of claim 29, wherein the substrate comprises copper, tungsten or both. 33. A method of chemical mechanical polishing of a substrate, comprising the steps of providing a polishing slurry comprising an oxidizing agent, a diluent, and a fumed r-alumina honing agent material, wherein the aerosol-like tau alumina is formed by a low temperature aerosolization method And wherein the recovered fumed alumina has a d5G particle size of between about 0.06 microns and about 0.25 microns, and the recovered aerosolized r alumina is subsequently honed to reduce its aggregates to smaller ones. The aggregates are such that the honed gamma oxidized luminary has an average D5G particle size between about 60% and 80% of the original D5G particle size before honing, and the honed r-alumina has a lower than An average D99.9 particle size of about seven times the D5 〇 particle size of the honed alumina, and wherein the honing system is a honing agent in which the honing additive salt is added and -9- 1355408 is honed Removing the honing additive salt substantially from the honed honing agent product prior to the addition of the product to the polishing slurry; providing a substrate having a surface comprising a metal, a metal-containing material, or both; and subjecting the slurry to the surface For removing some metal and metal-containing materials Contacting under conditions of both mobility manner. 34. A method of chemical mechanical polishing of a substrate, comprising the steps of providing a polishing slurry comprising an oxidizing agent, a diluent, and a fumed r-alumina honing agent material, wherein the fumed r-alumina is formed by a low temperature aerosolization method - Cheng, ._ and its - one of the recovered smoke - misty r oxidation of the d5G particle size between -about 〇. 〇 6 microns and about 0.25 microns, the recovered smoke-like gamma alumina The honing is to reduce the aggregates to smaller aggregates such that the honed r-alumina has an average D between about 60% and 80% of the original d5 〇 particle size before honing. 5 〇 particle size, and the honed 7 alumina has an average D99.9 particle size of about seven times lower than the D 5 Q particle size of the honed alumina, and wherein the honing system is not a wet honing method for adding a wet honing additive salt; providing a substrate having a surface comprising a metal, a metal-containing material, or both; and removing the portion of the metal from the surface with the slurry The material is in contact with the material under the conditions of both. 35. A method of chemically mechanically polishing a substrate, comprising the steps of: -1035408, providing an alumina slurry comprising a diluent and a fumed r-alumina honing agent material, wherein the aerosol-like alumina is based on low temperature smoke The method is formed, and wherein the recovered fumed alumina has a specific surface area between about 8 mm 2 /g and about 120 m 2 /g and has a D5G between about 0.06 μm and about 0.25 μm. The particle size, the recovered fumed r-alumina is then honed to reduce its aggregates to smaller aggregates, so that the honed r-alumina has about 60 of the original d5Q particle size before honing. An average d5Q particle size between % and 80%, and such that the honed r-alumina has an average d99.9 particle size that is less than about seven times the d5Q particle size of the honed alumina, and wherein the 硏a grinding system is a wet honing method in which a honing additive is used and which is substantially not removed from the honed honing agent product; a polishing accelerator is mixed into the alumina slurry when used to form a polishing slurry; Contains dielectric materials and metals, metal-containing materials, or both a surface substrate; and the prize liquid is in movable contact with the surface under conditions in which a portion of the substrate is removed. 36. A method of chemical mechanical polishing of a substrate comprising the steps of providing an aluminum oxide slurry comprising a diluent and a fumed r-alumina honing agent material, wherein the aerosol is? The alumina is formed by a low temperature aerosolization process, and wherein the recovered fumed alumina has a specific surface area of between about 8 mils per gram and about 120 mils per gram and has a ratio of about 0 Å. The Dso particle size of between 0.6 microns and about 0.25 microns is recovered by the smoky 7 alumina-11-1355408 _ honing to reduce its aggregates into smaller aggregates, so that the honed r alumina has An average d 5 〇 particle size between about 60% and 8% of the original d5C particle size before honing, and the honed r-alumina has a D50 particle size lower than that of the honed alumina. Approximately seven times the average D99.9 particle size, and wherein the honing is a honing agent that is substantially honed before the honed honing agent product is added to the polishing slurry using the honing additive a wet honing method for removing a honing additive; mixing a polishing accelerator into the alumina slurry for forming a polishing slurry; providing a material comprising a dielectric material and a metal, a metal containing material, or both - _ surface base material; one and one one --- make the slurry and the surface to remove a Contact movement of the substrate under the conditions.