CN101736344B - 化学机械抛光组合物及其相关方法 - Google Patents

化学机械抛光组合物及其相关方法 Download PDF

Info

Publication number
CN101736344B
CN101736344B CN2009102083436A CN200910208343A CN101736344B CN 101736344 B CN101736344 B CN 101736344B CN 2009102083436 A CN2009102083436 A CN 2009102083436A CN 200910208343 A CN200910208343 A CN 200910208343A CN 101736344 B CN101736344 B CN 101736344B
Authority
CN
China
Prior art keywords
mechanical polishing
chemical mechanical
chemical
substrate
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009102083436A
Other languages
English (en)
Chinese (zh)
Other versions
CN101736344A (zh
Inventor
刘振东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN101736344A publication Critical patent/CN101736344A/zh
Application granted granted Critical
Publication of CN101736344B publication Critical patent/CN101736344B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2009102083436A 2008-11-05 2009-11-05 化学机械抛光组合物及其相关方法 Expired - Fee Related CN101736344B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/264,928 2008-11-05
US12/264,928 US8735293B2 (en) 2008-11-05 2008-11-05 Chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
CN101736344A CN101736344A (zh) 2010-06-16
CN101736344B true CN101736344B (zh) 2012-01-18

Family

ID=41581914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009102083436A Expired - Fee Related CN101736344B (zh) 2008-11-05 2009-11-05 化学机械抛光组合物及其相关方法

Country Status (6)

Country Link
US (1) US8735293B2 (enExample)
EP (1) EP2184330B1 (enExample)
JP (1) JP5543174B2 (enExample)
KR (1) KR101655790B1 (enExample)
CN (1) CN101736344B (enExample)
TW (1) TWI460262B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341875B1 (ko) * 2008-04-30 2013-12-16 한양대학교 산학협력단 상변환 물질 연마용 슬러리 및 이를 이용한 상변환 물질의 패터닝 방법
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US20120001118A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Polishing slurry for chalcogenide alloy
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
EP2794733B1 (en) * 2011-12-21 2019-05-15 Basf Se Method for manufacturing cmp composition and application thereof
JP2013247341A (ja) 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
KR20140000496A (ko) * 2012-06-22 2014-01-03 에스케이하이닉스 주식회사 연마 조성물, 이의 제조 방법 및 이를 이용한 화학적 기계적 연마 방법
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6482234B2 (ja) * 2014-10-22 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
CN108624234A (zh) * 2017-03-21 2018-10-09 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
JP6775453B2 (ja) * 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP2022512187A (ja) * 2018-12-10 2022-02-02 シーエムシー マテリアルズ，インコーポレイティド ルテニウムｃｍｐ用の酸化剤不含スラリー

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6757971B2 (en) 2001-08-30 2004-07-06 Micron Technology, Inc. Filling plugs through chemical mechanical polish
US6884144B2 (en) 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
WO2004053456A2 (en) 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
KR100681266B1 (ko) 2005-07-25 2007-02-09 삼성전자주식회사 가변 저항 구조물의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법
US7741636B2 (en) 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US7297633B1 (en) * 2006-06-05 2007-11-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
KR100807223B1 (ko) 2006-07-12 2008-02-28 삼성전자주식회사 상변화 물질층, 상변화 물질층 형성 방법 및 이를 이용한상변화 메모리 장치의 제조 방법
US8518296B2 (en) * 2007-02-14 2013-08-27 Micron Technology, Inc. Slurries and methods for polishing phase change materials
US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
MY155239A (en) * 2007-07-26 2015-09-30 Cabot Microelectronics Corp Compositions and methods for chemical-mechanical polishing of phase change materials
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
KR101198100B1 (ko) * 2007-12-11 2012-11-09 삼성전자주식회사 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물

Also Published As

Publication number Publication date
US20100112906A1 (en) 2010-05-06
CN101736344A (zh) 2010-06-16
TW201022424A (en) 2010-06-16
JP5543174B2 (ja) 2014-07-09
EP2184330A1 (en) 2010-05-12
KR101655790B1 (ko) 2016-09-08
TWI460262B (zh) 2014-11-11
EP2184330B1 (en) 2011-05-11
US8735293B2 (en) 2014-05-27
KR20100050415A (ko) 2010-05-13
JP2010114446A (ja) 2010-05-20

Similar Documents

Publication Publication Date Title
CN101736344B (zh) 化学机械抛光组合物及其相关方法
CN102756325B (zh) 用来抛光相变合金的化学机械抛光组合物和方法
JP6790790B2 (ja) 研磨液、研磨液セット及び基体の研磨方法
TWI532830B (zh) 用於研磨鍺－銻－碲合金之化學機械研磨組成物及方法
JP5408437B2 (ja) 化学機械研磨用水系分散体、および該分散体を調製するためのキット、該キットを用いた化学機械研磨用水系分散体の調製方法、ならびに半導体装置の化学機械研磨方法
EP1660606A1 (en) Abrasive particles for chemical mechanical polishing
JP2004349426A (ja) Ｓｔｉ用化学機械研磨方法
CN103042464A (zh) 用于化学机械抛光钨的方法
JP5861906B2 (ja) 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法
TWI636129B (zh) 低缺陷化學機械硏磨組成物
CN102310362A (zh) 抛光硫族合金的方法
JP2002190458A (ja) 化学機械研磨用水系分散体
JP7508275B2 (ja) 研磨用組成物、研磨方法および半導体基板の製造方法
JP2012015520A (ja) カルコゲナイド合金のための研磨スラリー
KR20120122934A (ko) 화학 기계적 연마 조성물 및 게르마늄-안티모니-텔루륨 합금의 연마 방법
US20020127954A1 (en) Process for the chemical-mechanical polishing of isolation layers produced using the STI technology, at elevated temperatures
KR20120123644A (ko) 화학 기계적 연마 조성물 및 상 변화 합금의 연마 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120118

Termination date: 20171105

CF01 Termination of patent right due to non-payment of annual fee