TWI460262B - 化學機械研磨組成物及其相關方法 - Google Patents
化學機械研磨組成物及其相關方法 Download PDFInfo
- Publication number
- TWI460262B TWI460262B TW098137364A TW98137364A TWI460262B TW I460262 B TWI460262 B TW I460262B TW 098137364 A TW098137364 A TW 098137364A TW 98137364 A TW98137364 A TW 98137364A TW I460262 B TWI460262 B TW I460262B
- Authority
- TW
- Taiwan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- phase change
- change alloy
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 129
- 239000000126 substance Substances 0.000 title claims description 123
- 239000000203 mixture Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 28
- 239000000956 alloy Substances 0.000 claims description 53
- 229910045601 alloy Inorganic materials 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 40
- 239000002245 particle Substances 0.000 claims description 36
- 239000010455 vermiculite Substances 0.000 claims description 30
- 229910052902 vermiculite Inorganic materials 0.000 claims description 30
- 235000019354 vermiculite Nutrition 0.000 claims description 30
- 229920002635 polyurethane Polymers 0.000 claims description 17
- 239000004814 polyurethane Substances 0.000 claims description 17
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 11
- 239000002738 chelating agent Substances 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 150000004770 chalcogenides Chemical class 0.000 claims description 4
- 150000003868 ammonium compounds Chemical class 0.000 claims 1
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 18
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- -1 chalcogenide compound Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012782 phase change material Substances 0.000 description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- RLHGFJMGWQXPBW-UHFFFAOYSA-N 2-hydroxy-3-(1h-imidazol-5-ylmethyl)benzamide Chemical compound NC(=O)C1=CC=CC(CC=2NC=NC=2)=C1O RLHGFJMGWQXPBW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920000388 Polyphosphate Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- WMOJAWPGEQWAMM-UHFFFAOYSA-N [Ir].[Ru].[Ru] Chemical compound [Ir].[Ru].[Ru] WMOJAWPGEQWAMM-UHFFFAOYSA-N 0.000 description 1
- RSRJCYZEMGBMDE-UHFFFAOYSA-J [K+].[K+].[K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O Chemical compound [K+].[K+].[K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O RSRJCYZEMGBMDE-UHFFFAOYSA-J 0.000 description 1
- MDMXQSXFPASRFQ-UHFFFAOYSA-N [Ru].[Ru].[Re] Chemical compound [Ru].[Ru].[Re] MDMXQSXFPASRFQ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 150000001370 alpha-amino acid derivatives Chemical class 0.000 description 1
- 235000008206 alpha-amino acids Nutrition 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 150000001576 beta-amino acids Chemical class 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-L phosphoramidate Chemical compound NP([O-])([O-])=O PTMHPRAIXMAOOB-UHFFFAOYSA-L 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 239000001205 polyphosphate Substances 0.000 description 1
- 235000011176 polyphosphates Nutrition 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- CPOUUWYFNYIYLQ-UHFFFAOYSA-M tetra(propan-2-yl)azanium;hydroxide Chemical compound [OH-].CC(C)[N+](C(C)C)(C(C)C)C(C)C CPOUUWYFNYIYLQ-UHFFFAOYSA-M 0.000 description 1
- DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 description 1
- HBCNJOTXLRLIAB-UHFFFAOYSA-M tetracyclohexylazanium;hydroxide Chemical compound [OH-].C1CCCCC1[N+](C1CCCCC1)(C1CCCCC1)C1CCCCC1 HBCNJOTXLRLIAB-UHFFFAOYSA-M 0.000 description 1
- YZTANSPZKPAMGE-UHFFFAOYSA-M tetracyclopentylazanium;hydroxide Chemical compound [OH-].C1CCCC1[N+](C1CCCC1)(C1CCCC1)C1CCCC1 YZTANSPZKPAMGE-UHFFFAOYSA-M 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- RROIKUJKYDVRRG-UHFFFAOYSA-M tetrakis(2-methylpropyl)azanium;hydroxide Chemical compound [OH-].CC(C)C[N+](CC(C)C)(CC(C)C)CC(C)C RROIKUJKYDVRRG-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明係關於化學機械研磨組成物及使用該化學機械研磨組成物之方法。更具體而言,本發明係關於用於研磨具有相變合金(如鍺-銻-碲相變合金)之基板的化學機械研磨組成物。
使用能於絕緣性一般非結晶狀態與傳導性一般結晶狀態之間電性轉變的相變材料之相變隨機存取記憶體(Phase change random access memory,PRAM)裝置已經變為下一代記憶體裝置之領軍者。此等下一代PRAM裝置可取代傳統固態記憶體裝置如於每一記憶體位元採用微電子電路元件之動態隨機存取記憶體(dynamic random access memory,DRAM)裝置、靜態隨機存取記憶體(static random access memory,SRAM)裝置、可抹除可程式化唯讀記憶體(erasable programmable read only memory,EPROM)裝置及電子式可抹除可程式化唯讀記憶體(electrically erasable programmable read only memory,EEPROM)。此等傳統固態記憶體裝置耗費大量晶片空間以儲存資訊,因此限制了晶片密度;且使得程式化亦相對緩慢。
適用於PRAM裝置之相變材料(phase change materials)係包括硫屬元素化合物(chalcogenide)材料如鍺-碲(Ge-Te)相變合金及鍺-銻-碲(Ge-Sb-Te)相變合金。PRAM裝置之製造係包括化學機械研磨步驟,於該步驟中,硫屬元素化合物相變材料被選擇性地移除且使該裝置之表面被平面化。
Dysard等人於美國專利申請案公開第20070178700號中揭示了一種用於研磨具有硫屬元素化合物相變材料之基板的研磨組成物。Dysard等人揭示了用於研磨含有相變合金之基板的化學機械研磨組成物,該組成物係包含:(a)其量不超過約3重量%之顆粒研磨劑材料;(b)至少一種螯合劑,該螯合劑能螯合該相變合金、該相變合金之成分、或於化學機械研磨過程中自該相變合金材料形成之物質;以及(c)用於(a)及(b)之水性載劑。
現在需要一種化學機械研磨(CMP)組成物,該組成物能於PRAM裝置之製造中選擇性地移除相變材料並同時提供高移除速率及低碟形凹陷(dishing)。
於本發明之一態樣中,係提供用於化學機械研磨基板之方法,該方法包含:提供基板,其中該基板係包含硫屬元素化合物相變合金;提供化學機械研磨組成物,其中該化學機械研磨組成物係包含水;1至40重量%之平均顆粒尺寸為≦50nm的研磨劑;0至2重量%之四級銨化合物;其中該化學機械研磨組成物不含氧化劑且不含螯合劑;其中該化學機械研磨組成物之pH為>6至12;提供化學機械研磨墊;在介於該化學機械研磨墊與該基板之間的介面處產生動態接觸;以及將該化學機械研磨組成物分佈於該化學機械研磨墊上,使該化學機械研磨組成物位於或接近介於該化學機械研磨墊與該基板之間的該介面處;其中,至少部份該硫屬元素化合物相變合金係自該基板移除。
於本發明之另一態樣中,係提供用於化學機械研磨基板之方法,該方法包含:提供基板,其中該基板係包含鍺-銻-碲相變合金;提供化學機械研磨組成物,其中該化學機械研磨組成物係包含水;1至5重量%之平均顆粒尺寸為1至50nm的膠體矽石研磨劑(colloidal silica abrasive);0.01至5重量%之四級銨化合物;其中該化學機械研磨組成物不含氧化劑且不含螯合劑;其中該化學機械研磨組成物之pH為7至12;提供化學機械研磨墊;在介於該化學機械研磨墊與該基板之間的介面處產生動態接觸;以及將該化學機械研磨組成物分佈於該化學機械研磨墊上,使該化學機械研磨組成物位於或接近介於該化學機械研磨墊與該基板之間的該介面處;其中,至少部份該鍺-銻-碲相變合金係自該基板移除。
本發明之化學機械研磨方法係適用於研磨含有硫屬元素化合物相變合金之基板。於本發明之方法中所使用之化學機械研磨組成物係提供高的硫屬元素化合物相變合金移除速率以及相對於該基板上之其他材料的良好選擇性。
適用於本發明之化學機械研磨方法的基板係包含硫屬元素化合物相變合金。該硫屬元素化合物相變合金較佳係選自鍺-碲相變合金及鍺-銻-碲相變合金。該硫屬元素化合物相變合金最佳為鍺-銻-碲相變合金。
適用於本發明之化學機械研磨方法的基板係視需要進一步包含選自下列之附加材料:磷矽酸鹽玻璃(phosphor silicate glass,PSG)、硼磷矽酸鹽玻璃(boro-phosphor silicate glass,BPSG)、未摻雜之矽酸鹽玻璃(undoped silicate glass,USG)、旋塗式玻璃(spin-on-glass,SOG)、原矽酸四乙酯(TEOS)、電漿增強TEOS(plasma-enhanced TEOS,PETEOS)、可流動氧化物(FOx)、高密度電漿化學氣相沉積(high-density plasma chemical vapor deposition,HDP-CVD)氧化物、及氮化矽(如Si3
N4
)。該基板較佳係進一步包含選自Si3
N4
及TEOS之附加材料。
適用於本發明之研磨劑,舉例而言,係包括無機氧化物、無機氫氧化物、無機氫氧化物氧化物、金屬硼化物、金屬碳化物、金屬氮化物、聚合物顆粒及包含前述至少一者之混合物。適宜之無機氧化物,舉例而言,係包括矽石(SiO2
)、氧化鋁(Al2
O3
)、氧化鋯(ZrO2
)、氧化鈰(CeO2
)、氧化錳(MnO2
)、氧化鈦(TiO2
)或包含至少一種前述氧化物之組合。若需要,也可使用此等無機氧化物之改質形式如經有機聚合物包覆之無機氧化物顆粒及無機包覆之顆粒。適宜之金屬碳化物、硼化物及氮化物,舉例而言,係包括碳化矽、氮化矽、碳氮化矽(SiCN)、碳化硼、碳化鎢、碳化鋯、硼化鋁、碳化鉭、碳化鈦、或包含至少一種前述金屬碳化物、硼化物及氮化物之組合。該研磨劑較佳為膠體矽石研磨劑。適用於本發明之化學機械研磨方法的膠體矽石研磨劑係含有發煙矽石(fumed silica)、沉澱矽石(precipitated silica)及集聚矽石(agglomerated silica)中之至少一者。
於本發明之某些具體實施例中,該研磨劑係平均顆粒尺寸為≦50nm之膠體矽石。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至50nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至40nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至30nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至25nm。
於本發明之某些具體實施例中,所使用之該化學機械研磨組成物係含有≧12至40重量%之研磨劑,其中該研磨劑係平均顆粒尺寸為≦50nm之膠體矽石。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至50nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至40nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至30nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至25nm。
於本發明之某些具體實施例中,所使用之該化學機械研磨組成物係含有≧15至35重量%之研磨劑,其中該研磨劑係平均顆粒尺寸為≦50nm之膠體矽石。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至50nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至40nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至30nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至25nm。
於本發明之某些具體實施例中,所使用之該化學機械研磨組成物係含有20至30重量%之研磨劑,其中該研磨劑係平均顆粒尺寸為≦50nm之膠體矽石。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至50nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至40nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至30nm。於此等具體實施例之某些態樣中,該膠體矽石之平均顆粒尺寸為1至25nm。
較佳地,於本發明之化學機械研磨方法中所使用之化學機械研磨組成物係進一步包含0.01至5重量%,更佳0.1至3重量%,再佳0.5至2重量%之四級銨化合物。適用於該化學機械研磨組成物之四級銨化合物係包括氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四異丙基銨、氫氧化四環丙基銨、氫氧化四丁基銨、氫氧化四異丁基銨、氫氧化四第三丁基銨、氫氧化四第二丁基銨、氫氧化四環丁基銨、氫氧化四戊基銨、氫氧化四環戊基銨、氫氧化四己基銨、氫氧化四環己基銨、及其混合物。較佳之四級銨化合物係包括氫氧化四甲基銨(TMAH)及氫氧化四丁基銨(TBAH)。
於本發明之某些具體實施例中,該化學機械研磨組成物進一步包含0.01至5重量%之氫氧化四甲基銨(TMAH)。於此等具體實施例之某些態樣中,該化學機械研磨組成物進一步包含0.1至3重量%之氫氧化四甲基銨(TMAH)。於此等具體實施例之某些態樣中,該化學機械研磨組成物進一步包含0.5至2重量%之氫氧化四甲基銨(TMAH)。
於本發明之某些具體實施例中,該化學機械研磨組成物進一步包含0.01至5重量%之氫氧化四丁基銨(TBAH)。於此等具體實施例之某些態樣中,該化學機械研磨組成物進一步包含0.1至3重量%之氫氧化四丁基銨(TBAH)。於此等具體實施例之某些態樣中,該化學機械研磨組成物進一步包含0.5至2重量%之氫氧化四丁基銨(TBAH)。
於本發明之化學機械研磨方法中所使用之化學機械研磨組成物所含的水較佳為去離子水及蒸餾水中之至少一者,以限制附帶之雜質。
於本發明之化學機械研磨方法中所使用之化學機械研磨組成物係視需要進一步包含選自分散劑、界面活性劑、緩衝劑及殺生物劑之附加添加劑。
於本發明之化學機械研磨方法中所使用之化學機械研磨組成物係不含氧化劑。此處及後附申請專利範圍中所使用之術語“不含氧化劑”係意指該化學機械研磨組成物不含有氧化劑如過氧化氫、過硫酸鹽(如單過硫酸銨及二過硫酸鉀)及過碘酸鹽(如過碘酸鉀)。
於本發明之化學機械研磨方法中所使用之化學機械研磨組成物係不含螯合劑。此處及後附申請專利範圍中所使用之術語“不含螯合劑”係意指該化學機械研磨組成物不含有能與該硫屬元素化合物相變合金之成份(亦即鍺、銻或碲)螯合之螯合劑如二羧酸(如草酸、丙二酸、琥珀酸、馬來酸、鄰苯二甲酸、酒石酸、天冬胺酸、麩胺酸)、多羧酸(如檸檬酸;1,2,3,4-丁烷四羧酸;聚丙烯酸;聚馬來酸)、胺基羧酸(如α-胺基酸、β-胺基酸、ω-胺基酸)、磷酸鹽、聚磷酸鹽、胺基膦酸鹽(amino phosphonate)、膦酸基羧酸及聚合物螯合劑。
於本發明之化學機械研磨方法中所使用之化學機械研磨組成物於>6至12之pH下提供效能。較佳地,所使用之化學機械研磨組成物於7至12之pH下提供效能。適用於調整該化學機械研磨組成物之pH的酸包括,舉例而言,硝酸、硫酸及鹽酸。適用於調整該化學機械研磨組成物之pH的鹼包括,舉例而言,氫氧化銨及氫氧化鉀。
於本發明之某些具體實施例中,該硫屬元素化合物相變合金為鍺-銻-碲相變合金,該研磨劑為膠體矽石,以及該基板係進一步包含Si3
N4
。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金移除速率係超出其Si3
N4
移除速率。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於Si3
N4
的移除速率選擇性為≧40:1。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於Si3
N4
的移除速率選擇性為≧60:1。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於Si3
N4
的移除速率選擇性為≧100:1。
於本發明之某些具體實施例中,該硫屬元素化合物相變合金為鍺-銻-碲相變合金,該研磨劑為膠體矽石,以及該基板係進一步包含原矽酸四乙酯(TEOS)。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金移除速率係超出其TEOS移除速率。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於TEOS的移除速率選擇性為≧40:1。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於TEOS的移除速率選擇性為≧60:1。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於TEOS的移除速率選擇性為≧100:1。於此等具體實施例之某些態樣中,該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於TEOS的移除速率選擇性為≧200:1。
於本發明之某些具體實施例中,該硫屬元素化合物相變合金為鍺-銻-碲相變合金,該研磨劑為膠體矽石,以及該化學機械研磨組成物於200毫米(mm)研磨機(如Applied Materials Mirra之200mm研磨機)上之平台轉速(platen speed)為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200毫升/分鐘(mL/min)、以及標稱下壓力為1.0磅/平方吋(psi)時,所顯現之鍺-銻-碲相變合金移除速率為≧200埃/分鐘(/min),較佳≧400/min,更佳≧800/min,最佳≧1,000/min;其中該化學機械研磨墊係包含具有聚合物空心微粒(polymeric hollow core microparticle)之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊(subpad)。
於本發明之某些具體實施例中,用於化學機械研磨基板之方法係包含:提供基板,其中該基板係包含鍺-銻-碲相變合金;提供化學機械研磨組成物,其中該化學機械研磨組成物係包含水;1至5重量%之平均顆粒尺寸為1至50nm的膠體矽石研磨劑;0.01至5重量%,較佳0.1至3重量%,再佳0.5至2重量%之四級銨化合物;其中該化學機械研磨組成物不含氧化劑且不含螯合劑;其中該化學機械研磨組成物之pH為7至12;提供化學機械研磨墊;在介於該化學機械研磨墊與該基板之間的介面處產生動態接觸;以及將該化學機械研磨組成物分佈於該化學機械研磨墊上,使該化學機械研磨組成物位於或接近介於該化學機械研磨墊與該基板之間的該介面處;其中,至少部份該鍺-銻-碲相變合金係自該基板移除。於此等具體實施例之某些態樣中,該化學機械研磨組成物於200mm研磨機(如Applied Materials Mirra之200mm研磨機)上之平台轉速為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為1.0psi時,所顯現之鍺-銻-碲硫屬元素化合物相變合金移除速率為≧200/min,較佳≧400/min,更佳≧800/min,最佳1,000/min;其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。於此等具體實施例之某些態樣中,該基板係進一步包含Si3
N4
,以及該化學機械研磨組成物於200mm研磨機(如Applied Materials Mirra之200mm研磨機)上之平台轉速為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為1.0psi時,所顯現之鍺-銻-碲相變合金相對於Si3
N4
的移除速率選擇性為≧40:1,較佳≧50:1,更佳≧100:1;以及鍺-銻-碲移除速率為≧200/min,較佳為≧400/min,更佳≧800/min,最佳≧1,000/min;其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。於此等具體實施例之某些態樣中,該基板係進一步包含原矽酸四乙酯(TEOS),以及該化學機械研磨組成物於200mm研磨機(如Applied Materials Mirra之200mm研磨機)上之平台轉速為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為1.0psi時,所顯現之鍺-銻-碲硫屬元素化合物相變合金相對於TEOS的移除速率選擇性為≧40:1,較佳≧60:1,更佳≧100:1,最佳≧200:1;以及鍺-銻-碲移除速率為≧200/min,較佳≧400/min,更佳≧800/min,最佳≧1,000/min;其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。
本發明之某些具體實施例將於下列實施例中詳細說明。
所測試之化學機械研磨組成物(CMPC’s)係揭示於表1中。該化學機械研磨組成物A為一比較配方,其不包含於本發明所請之範圍內。
使用配備有ISRM檢測器系統之Applied Materials,Inc. Mirra 200mm研磨機並使用IC1010TM
聚胺酯研磨墊(購買自羅門哈斯電子材料CMP公司(Rohm and Haas Electronic Materials CMP Inc.)),於1psi下壓力、化學機械研磨組成物流速為200mL/min、平台轉速為60rpm及載具轉速為56rpm之條件下,測試該於表1中所揭示之化學機械研磨組成物(CMPC)。於所指明之條件下研磨該來自SKW Associates Inc.之鎵-銻-碲(GST)空白晶圓(blanket wafer)。藉由穿透式電子顯微鏡(TEM)觀察來測定於表2
中所記述之GST移除速率數據。於所指明之條件下研磨來自ATDF之Si3
N4
及TEOS空白晶圓。使用ThermWave2600膜厚度測量系統來測量於表2
中所記述之Si3
N4
移除速率及TEOS移除速率。
該研磨測試之結果係顯示於表2
中。
Claims (10)
- 一種用於化學機械研磨基板之方法,係包含:提供基板,其中該基板係包含硫屬元素化合物相變合金,其中該硫屬元素化合物相變合金為鍺-銻-碲相變合金;提供化學機械研磨組成物,其中該化學機械研磨組成物係包含水;1至40重量%之平均顆粒尺寸為50nm的研磨劑;0至2重量%之四級銨化合物;其中該化學機械研磨組成物不含氧化劑且不含螯合劑;其中該化學機械研磨組成物之pH為>6至12;提供化學機械研磨墊;在介於該化學機械研磨墊與該基板之間的介面處產生動態接觸;以及將該化學機械研磨組成物分佈於該化學機械研磨墊上,使該化學機械研磨組成物位於或接近介於該化學機械研磨墊與該基板之間的該介面處;其中,至少部份該硫屬元素化合物相變合金係自該基板移除。
- 如申請專利範圍第1項之方法,其中該研磨劑為膠體矽石;其中該基板進一步包含Si3 N4 ;以及,其中該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於Si3 N4 的移除速率選擇性為40:1。
- 如申請專利範圍第1項之方法,其中該研磨劑為膠體矽石;其中該基板係進一步包含原矽酸四乙酯(TEOS);以 及,其中該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於TEOS的移除速率選擇性為40:1。
- 如申請專利範圍第1項之方法,其中該研磨劑為膠體矽石;以及,其中該化學機械研磨組成物於200mm研磨機上之平台轉速為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為6.89kPa(1.0psi)時,所顯現之鍺-銻-碲相變合金移除速率為200Å/min,其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。
- 如申請專利範圍第1項之方法,其中該化學機械研磨組成物係包含水;1至5重量%之平均顆粒尺寸為1至50nm的膠體矽石研磨劑顆粒;0.01至2重量%之四級銨化合物;且其中該化學機械研磨組成物之pH為7至12。
- 如申請專利範圍第5項之方法,其中,該基板進一步包含Si3 N4 ;以及,其中該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於Si3 N4 的移除速率選擇性為40:1。
- 如申請專利範圍第5項之方法,其中,該基板進一步包含原矽酸四乙酯(TEOS);以及,其中該化學機械研磨組成物所顯現之鍺-銻-碲相變合金相對於TEOS的移除速率選擇性為60:1。
- 如申請專利範圍第5項之方法,其中,該化學機械研磨 組成物於200mm研磨機上之平台轉速為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為6.89kPa(1.0psi)時,所顯現之鍺-銻-碲相變合金移除速率為200Å/min,其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。
- 如申請專利範圍第6項之方法,其中,該化學機械研磨組成物於200mm研磨機上之平台轉速為每分鐘60轉、載具轉速為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為6.89kPa(1.0psi)時,所顯現之鍺-銻-碲相變合金移除速率為200Å/min,其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。
- 如申請專利範圍第7項之方法,其中,該化學機械研磨組成物於200mm研磨機上之平台轉速為每分鐘60轉、載具轉速度為每分鐘56轉、化學機械研磨組成物流速為200mL/min、以及標稱下壓力為6.89kPa(1.0psi)時,所顯現之鍺-銻-碲相變合金移除速率為200Å/min,其中該化學機械研磨墊係包含具有聚合物空心微粒之聚胺酯研磨層以及聚胺酯浸漬之非織物次墊。
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US20100112906A1 (en) | 2010-05-06 |
EP2184330B1 (en) | 2011-05-11 |
US8735293B2 (en) | 2014-05-27 |
EP2184330A1 (en) | 2010-05-12 |
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