KR101195349B1 - 루테늄 ｃｍｐ 조성물 및 방법 - Google Patents

루테늄 ｃｍｐ 조성물 및 방법 Download PDF

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Publication number
KR101195349B1
KR101195349B1 KR1020107004345A KR20107004345A KR101195349B1 KR 101195349 B1 KR101195349 B1 KR 101195349B1 KR 1020107004345 A KR1020107004345 A KR 1020107004345A KR 20107004345 A KR20107004345 A KR 20107004345A KR 101195349 B1 KR101195349 B1 KR 101195349B1
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South Korea
Prior art keywords
composition
cmp
ruthenium
substrate
polishing
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Expired - Fee Related
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KR1020107004345A
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English (en)
Korean (ko)
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KR20100043087A (ko
Inventor
다니엘라 화이트
존 파커
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20100043087A publication Critical patent/KR20100043087A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020107004345A 2007-08-01 2008-07-31 루테늄 ｃｍｐ 조성물 및 방법 Expired - Fee Related KR101195349B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/888,406 2007-08-01
US11/888,406 US8008202B2 (en) 2007-08-01 2007-08-01 Ruthenium CMP compositions and methods
PCT/US2008/009245 WO2009017782A2 (en) 2007-08-01 2008-07-31 Ruthenium cmp compositions and methods

Publications (2)

Publication Number Publication Date
KR20100043087A KR20100043087A (ko) 2010-04-27
KR101195349B1 true KR101195349B1 (ko) 2012-10-26

Family

ID=40305135

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107004345A Expired - Fee Related KR101195349B1 (ko) 2007-08-01 2008-07-31 루테늄 ｃｍｐ 조성물 및 방법

Country Status (5)

Country Link
US (1) US8008202B2 (enExample)
JP (1) JP5314019B2 (enExample)
KR (1) KR101195349B1 (enExample)
TW (1) TWI388638B (enExample)
WO (1) WO2009017782A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
US8327066B2 (en) 2008-09-30 2012-12-04 Samsung Electronics Co., Ltd. Method of managing a solid state drive, associated systems and implementations
US20140054266A1 (en) * 2012-08-24 2014-02-27 Wiechang Jin Compositions and methods for selective polishing of platinum and ruthenium materials
US9196283B1 (en) 2013-03-13 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a chemical buffer
US9281275B2 (en) 2014-05-15 2016-03-08 Texas Instruments Incorporated Bond pad having ruthenium directly on passivation sidewall
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
US12024663B2 (en) 2019-02-13 2024-07-02 Tokuyama Corporation Onium salt-containing treatment liquid for semiconductor wafers
JP7496410B2 (ja) 2020-02-25 2024-06-06 株式会社トクヤマ ルテニウムの半導体用処理液
US12448545B2 (en) 2021-05-13 2025-10-21 Araca, Inc. Silicon carbide (SIC) wafer polishing with slurry formulation and process
CN117580975A (zh) 2021-06-30 2024-02-20 恩特格里斯公司 过渡金属的抛光
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869336B1 (en) 2003-09-18 2005-03-22 Novellus Systems, Inc. Methods and compositions for chemical mechanical planarization of ruthenium
US20060117667A1 (en) 2002-02-11 2006-06-08 Siddiqui Junaid A Free radical-forming activator attached to solid and used to enhance CMP formulations

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105516A (en) * 1977-07-11 1978-08-08 Ppg Industries, Inc. Method of electrolysis
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
EP1252248A1 (en) * 1999-12-14 2002-10-30 Rodel Holdings, Inc. Polishing compositions for noble metals
JP2002031867A (ja) * 2000-05-08 2002-01-31 Fuji Photo Film Co Ltd ハロゲン化銀カラー写真感光材料の処理方法
DE10048477B4 (de) * 2000-09-29 2008-07-03 Qimonda Ag Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe
JP2002161267A (ja) * 2000-11-27 2002-06-04 Hitachi Chem Co Ltd 白金族金属用研磨液及びそれを用いた研磨方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
US6943039B2 (en) * 2003-02-11 2005-09-13 Applied Materials Inc. Method of etching ferroelectric layers
US7160807B2 (en) 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
WO2005019364A1 (en) * 2003-08-14 2005-03-03 Ekc Technology, Inc. Periodic acid compositions for polishing ruthenium/high k substrates
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
KR100648264B1 (ko) * 2004-08-17 2006-11-23 삼성전자주식회사 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
EP1893355A1 (en) * 2005-06-16 2008-03-05 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
US7265055B2 (en) 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
JP2007201012A (ja) * 2006-01-24 2007-08-09 Fujifilm Corp 金属用研磨液
JP2007220759A (ja) * 2006-02-14 2007-08-30 Fujifilm Corp 金属用研磨液及びそれを用いた化学的機械的研磨方法
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US20080067077A1 (en) * 2006-09-04 2008-03-20 Akira Kodera Electrolytic liquid for electrolytic polishing and electrolytic polishing method
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060117667A1 (en) 2002-02-11 2006-06-08 Siddiqui Junaid A Free radical-forming activator attached to solid and used to enhance CMP formulations
US6869336B1 (en) 2003-09-18 2005-03-22 Novellus Systems, Inc. Methods and compositions for chemical mechanical planarization of ruthenium

Also Published As

Publication number Publication date
TWI388638B (zh) 2013-03-11
TW200906999A (en) 2009-02-16
US8008202B2 (en) 2011-08-30
US20090035942A1 (en) 2009-02-05
WO2009017782A3 (en) 2009-04-16
WO2009017782A2 (en) 2009-02-05
JP5314019B2 (ja) 2013-10-16
JP2010535424A (ja) 2010-11-18
KR20100043087A (ko) 2010-04-27

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