TWI388638B - 釕化學機械研磨組合物及方法 - Google Patents

釕化學機械研磨組合物及方法 Download PDF

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Publication number
TWI388638B
TWI388638B TW097128616A TW97128616A TWI388638B TW I388638 B TWI388638 B TW I388638B TW 097128616 A TW097128616 A TW 097128616A TW 97128616 A TW97128616 A TW 97128616A TW I388638 B TWI388638 B TW I388638B
Authority
TW
Taiwan
Prior art keywords
composition
substrate
cmp
ligand
ruthenium
Prior art date
Application number
TW097128616A
Other languages
English (en)
Chinese (zh)
Other versions
TW200906999A (en
Inventor
懷特 丹尼亞拉
帕克 約翰
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW200906999A publication Critical patent/TW200906999A/zh
Application granted granted Critical
Publication of TWI388638B publication Critical patent/TWI388638B/zh

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Classifications

    • H10P52/403—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097128616A 2007-08-01 2008-07-29 釕化學機械研磨組合物及方法 TWI388638B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/888,406 US8008202B2 (en) 2007-08-01 2007-08-01 Ruthenium CMP compositions and methods

Publications (2)

Publication Number Publication Date
TW200906999A TW200906999A (en) 2009-02-16
TWI388638B true TWI388638B (zh) 2013-03-11

Family

ID=40305135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097128616A TWI388638B (zh) 2007-08-01 2008-07-29 釕化學機械研磨組合物及方法

Country Status (5)

Country Link
US (1) US8008202B2 (enExample)
JP (1) JP5314019B2 (enExample)
KR (1) KR101195349B1 (enExample)
TW (1) TWI388638B (enExample)
WO (1) WO2009017782A2 (enExample)

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US8327066B2 (en) 2008-09-30 2012-12-04 Samsung Electronics Co., Ltd. Method of managing a solid state drive, associated systems and implementations
US20140054266A1 (en) * 2012-08-24 2014-02-27 Wiechang Jin Compositions and methods for selective polishing of platinum and ruthenium materials
US9196283B1 (en) 2013-03-13 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a chemical buffer
US9281275B2 (en) 2014-05-15 2016-03-08 Texas Instruments Incorporated Bond pad having ruthenium directly on passivation sidewall
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
EP3926662B1 (en) 2019-02-13 2025-04-30 Tokuyama Corporation Onium salt-containing processing solution for semiconductor wafers
WO2021172397A1 (ja) 2020-02-25 2021-09-02 株式会社トクヤマ ルテニウムの半導体用処理液
WO2022240842A1 (en) * 2021-05-13 2022-11-17 Araca, Inc. Silicon carbide (sic) wafer polishing with slurry formulation and process
WO2023278215A1 (en) 2021-06-30 2023-01-05 Entegris, Inc. Polishing of transition metals
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

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US20020111027A1 (en) * 1999-12-14 2002-08-15 Vikas Sachan Polishing compositions for noble metals
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US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
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Also Published As

Publication number Publication date
US20090035942A1 (en) 2009-02-05
JP5314019B2 (ja) 2013-10-16
JP2010535424A (ja) 2010-11-18
KR101195349B1 (ko) 2012-10-26
KR20100043087A (ko) 2010-04-27
US8008202B2 (en) 2011-08-30
TW200906999A (en) 2009-02-16
WO2009017782A3 (en) 2009-04-16
WO2009017782A2 (en) 2009-02-05

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