JP5986146B2 - 基板を化学機械的に研磨加工する方法 - Google Patents
基板を化学機械的に研磨加工する方法 Download PDFInfo
- Publication number
- JP5986146B2 JP5986146B2 JP2014138830A JP2014138830A JP5986146B2 JP 5986146 B2 JP5986146 B2 JP 5986146B2 JP 2014138830 A JP2014138830 A JP 2014138830A JP 2014138830 A JP2014138830 A JP 2014138830A JP 5986146 B2 JP5986146 B2 JP 5986146B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- chemical mechanical
- polishing composition
- mechanical polishing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 203
- 239000000758 substrate Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 54
- 239000000203 mixture Substances 0.000 claims description 178
- 239000000126 substance Substances 0.000 claims description 92
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 239000003054 catalyst Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 28
- 239000003112 inhibitor Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 18
- 239000003381 stabilizer Substances 0.000 claims description 17
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical group [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 14
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 10
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 8
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002506 iron compounds Chemical class 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 150000001413 amino acids Chemical class 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000001361 adipic acid Substances 0.000 claims description 4
- 235000011037 adipic acid Nutrition 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000463 material Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 11
- -1 metonol Chemical class 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000011164 primary particle Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- 235000001014 amino acid Nutrition 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 125000005210 alkyl ammonium group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000006174 pH buffer Substances 0.000 description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- JZBCTZLGKSYRSF-UHFFFAOYSA-N 2-Ethyl-3,5-dimethylpyrazine Chemical compound CCC1=NC=C(C)N=C1C JZBCTZLGKSYRSF-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000004103 aminoalkyl group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 2
- 235000000396 iron Nutrition 0.000 description 2
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- IAEGWXHKWJGQAZ-UHFFFAOYSA-N trimethylpyrazine Chemical compound CC1=CN=C(C)C(C)=N1 IAEGWXHKWJGQAZ-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PFFANLXVTHIIBE-UHFFFAOYSA-N 1-methyl-4-pyridin-4-ylpyridin-1-ium Chemical class C1=C[N+](C)=CC=C1C1=CC=NC=C1 PFFANLXVTHIIBE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- IGJQUJNPMOYEJY-UHFFFAOYSA-N 2-acetylpyrrole Chemical compound CC(=O)C1=CC=CN1 IGJQUJNPMOYEJY-UHFFFAOYSA-N 0.000 description 1
- 239000001363 2-ethyl-3,5-dimethylpyrazine Substances 0.000 description 1
- JVRHDWRSHRSHHS-UHFFFAOYSA-N 3-hydroxysilylpropan-1-amine Chemical compound NCCC[SiH2]O JVRHDWRSHRSHHS-UHFFFAOYSA-N 0.000 description 1
- GUQMDNQYMMRJPY-UHFFFAOYSA-N 4,4-dimethyl-1,3-oxazolidine Chemical compound CC1(C)COCN1 GUQMDNQYMMRJPY-UHFFFAOYSA-N 0.000 description 1
- MKYOEPFFIKHPRE-UHFFFAOYSA-N 4-ethyl-2-heptadec-2-enyl-4,5-dihydro-1,3-oxazole Chemical compound CCCCCCCCCCCCCCC=CCC1=NC(CC)CO1 MKYOEPFFIKHPRE-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- ZOKIJEBQDZFGMW-PSXMRANNSA-N [(2R)-2-[12-(4-azido-2-nitroanilino)dodecanoyloxy]-3-tetradecanoyloxypropyl] 2-(trimethylazaniumyl)ethyl phosphate Chemical compound CCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCCCCCCCCCCNc1ccc(cc1[N+]([O-])=O)N=[N+]=[N-] ZOKIJEBQDZFGMW-PSXMRANNSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 229920001448 anionic polyelectrolyte Polymers 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- KQNZLOUWXSAZGD-UHFFFAOYSA-N benzylperoxymethylbenzene Chemical compound C=1C=CC=CC=1COOCC1=CC=CC=C1 KQNZLOUWXSAZGD-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-O butylazanium Chemical compound CCCC[NH3+] HQABUPZFAYXKJW-UHFFFAOYSA-O 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- ITZXULOAYIAYNU-UHFFFAOYSA-N cerium(4+) Chemical class [Ce+4] ITZXULOAYIAYNU-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- RLGQACBPNDBWTB-UHFFFAOYSA-N cetyltrimethylammonium ion Chemical compound CCCCCCCCCCCCCCCC[N+](C)(C)C RLGQACBPNDBWTB-UHFFFAOYSA-N 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000000701 coagulant Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical class OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
この実施例は本発明の方法により達成された調節可能な選択性を示す。
選択性=1.4723−0.0131x%酸化物構成要素 (I)
この実施例は独創的な方法によって達成された調節可能な選択性について示す。
タングステン除去速度(Å/分)=1029+236[触媒濃度(ppm)]−612.7[酵素濃度(ppm)]2 (II)
酸化物除去速度(Å/分)=534+463 [研磨材濃度(重量%)] (III)
最後に、本発明の好ましい形態の一部を列挙すると、下記のとおりである。
(1)少なくとも第一層および第二層を有する基板を研磨加工するための化学機械研磨組成物の製造方法であって、
(a)第二層と比較して第一層に対する第一の選択性を有する研磨材を含む第一の化学機械研磨組成物を提供すること、
(b)第二層と比較して第一層に対する第二の選択性を有する研磨材を含む第二の化学機械研磨組成物を提供すること(第二の化学機械研磨組成物が第一の化学機械研磨組成物の存在下で安定しており、第一および第二の選択性は異なる)、および
(c)第二層と比較して第一層に対する最終的な選択性を達成する比率で第一および第二の化学機械研磨組成物を混合すること、
を含む、方法。
(2)前記第一層が金属層であり、前記第二層が誘電体層である、項目1に記載の方法。
(3)前記第一層がタングステンを含む、項目2に記載の方法。
(4)前記第二層が酸化ケイ素、酸窒化ケイ素またはドープした酸化ケイ素を含む、項目2に記載の方法。
(5)前記第二層と比較して前記第一層に対する第一の選択性が25:1〜1:1である、項目1に記載の方法。
(6)前記第二層と比較して前記第一層に対する第二の選択性が0.04:1〜1:1である、項目1に記載の方法。
(7)前記第一の化学機械研磨組成物が、
(a)複数の酸化状態を有する無機鉄化合物および有機鉄化合物よりなる群から選択される鉄触媒、
(b)リン酸、フタル酸、クエン酸、アジピン酸、シュウ酸、マロン酸、ベンゾニトリルおよびそれらの混合物よりなる群から選択される少なくとも1つの安定化剤、
(c)水酸化テトラアルキルアンモニウムおよびアミノ酸よりなる群から選択される金属エッチング阻害剤、および
(d)液体キャリア
をさらに含む、項目1に記載の方法。
(8)前記鉄触媒が硝酸第二鉄であり、前記安定化剤がマロン酸であり、前記阻害剤が水酸化テトラブチルアンモニウムであり、前記研磨材がシリカである、項目7に記載の方法。
(9)前記第二の化学機械研磨組成物が水酸化テトラアルキルアンモニウムおよび液体キャリアをさらに含む、項目1に記載の方法。
(10)前記水酸化テトラアルキルアンモニウムが水酸化テトラブチルアンモニウムである、項目9に記載の方法。
(11)前記研磨材がシリカである、項目9に記載の方法。
(12)(d)前記第一および第二の化学機械研磨組成物の混合物に酸化剤を添加することをさらに含む、項目1に記載の方法。
(13)前記酸化剤が過酸化水素である、項目12に記載の方法。
(14)基板を化学機械的に研磨加工する方法であって、
(a)少なくとも第一層および第二層を有する基板を提供すること、
(b)(i)第二層と比較して第一層に対する第一の選択性を有する研磨材を含む第一の化学機械研磨組成物を提供すること、
(ii)第二層と比較して第一層に対する第二の選択性を有する研磨材を含む第二の化学機械研磨組成物を提供し、該第二の化学機械研磨組成物が第一の化学機械研磨組成物の存在下で安定しており、第一および第二の選択性は異なり、
(iii)第一および第二の化学機械研磨組成物を、第二層と比較して第一層に対する最終的な選択性を有する最終的な化学機械研磨組成物を達成する比率で混合する工程を含む、最終的な化学機械研磨組成物を製造すること、
(c)基板を最終的な化学機械研磨組成物と接触させること、
(d)基板と研磨パッドの間に最終的な化学機械研磨組成物を介在させ、基板に対して研磨パッドを移動させること、および
(e)基板の少なくとも一部を磨耗させて基板を研磨すること、
を含む、方法。
(15)前記第一層が金属層であり、前記第二層が誘電体層である、項目14に記載の方法。
(16)前記第一層がタングステンを含む、項目15に記載の方法。
(17)前記第二層が酸化ケイ素を含む、項目15に記載の方法。
(18)前記第二層と比較して前記第一層に対する第一の選択性が25:1〜1:1である、項目14に記載の方法。
(19)前記第二層と比較して前記第一層に対する第二の選択性が0.04:1〜1:1である、項目14に記載の方法。
(20)前記第一の化学機械研磨組成物が、
(a)複数の酸化状態を有する無機鉄化合物および有機鉄化合物よりなる群から選択される鉄触媒、
(b)リン酸、フタル酸、クエン酸、アジピン酸、シュウ酸、マロン酸、ベンゾニトリルおよびそれらの混合物よりなる群から選択された少なくとも1つの安定剤、
(c)水酸化テトラアルキルアンモニウムおよびアミノ酸よりなる群から選択された金属エッチング阻害剤、および
(d)液体キャリア
をさらに含む、項目14に記載の方法。
(21)前記鉄触媒が硝酸第二鉄であり、前記安定化剤がマロン酸であり、前記阻害剤が水酸化テトラブチルアンモニウムであり、および前記研磨材がシリカである、項目20に記載の方法。
(22)前記第二の化学機械研磨組成物が水酸化テトラアルキルアンモニウムおよび液体キャリアをさらに含む、項目14に記載の方法。
(23)前記水酸化テトラアルキルアンモニウムが水酸化テトラブチルアンモニウムである、項目22に記載の方法。
(24)前記研磨材がシリカである、項目22に記載の方法。
(25)(b)(iv)前記第一および第二の化学機械研磨組成物の混合物に酸化剤を添加することをさらに含む、項目14に記載の方法。
(26)前記酸化剤が過酸化水素である、項目25に記載の方法。
Claims (9)
- 基板を化学機械的に研磨加工する方法であって、
(a)少なくとも第一層および第二層を有する基板であって、前記第一層がタングステンを含み、前記第二層が誘電体層である基板を提供すること、
(b)最終的な化学機械研磨組成物を調製することであって、該化学機械研磨組成物の調製が、下記の工程:
(i)第二層と比較して第一層に対する第一の選択性を有する、研磨材、鉄触媒、少なくとも1つの安定化剤および金属エッチング阻害剤を含む第一の化学機械研磨組成物を提供すること、
(ii)第二層と比較して第一層に対する第二の選択性を有する、研磨材および水酸化テトラアルキルアンモニウム金属エッチング阻害剤を含む第二の化学機械研磨組成物を提供すること(該第二の化学機械研磨組成物が前記第一の化学機械研磨組成物の存在下で安定しており、前記第一および第二の選択性は異なる)、
(iii)第二層と比較して第一層に対する最終的な選択性を達成する比率で前記第一および第二の化学機械研磨組成物を混合して前記最終的な化学機械研磨組成物を調製すること、
を含むこと、
(c)前記基板を、前記最終的な化学機械研磨組成物に接触させること、
(d)前記基板と研磨パッドの間に前記最終的な化学機械研磨組成物を介在させ、前記基板に対して相対的に前記研磨パッドを移動させること、および
(e)前記基板の少なくとも一部を磨耗させて前記基板を研磨すること、
を含み、そして
前記第一の化学機械研磨組成物の金属エッチング阻害剤の濃度と前記第二の化学機械研磨組成物の金属エッチング阻害剤の濃度が同一である、方法。 - 前記第二層が酸化ケイ素を含む、請求項1に記載の方法。
- 前記第二層と比較して前記第一層に対する第一の選択性が25:1〜1:1である、請求項1又は2に記載の方法。
- 前記第二層と比較して前記第一層に対する第二の選択性が0.04:1〜1:1である、請求項1〜3のいずれか一項に記載の方法。
- 前記第一の化学機械研磨組成物が、
(a)複数の酸化状態を有する無機鉄化合物および有機鉄化合物よりなる群から選択される鉄触媒、
(b)リン酸、フタル酸、クエン酸、アジピン酸、シュウ酸、マロン酸、ベンゾニトリルおよびそれらの混合物よりなる群から選択された少なくとも1つの安定剤、
(c)水酸化テトラアルキルアンモニウムおよびアミノ酸よりなる群から選択された金属エッチング阻害剤、および
(d)液体キャリア
を含む、請求項1〜4のいずれか一項に記載の方法。 - 前記鉄触媒が硝酸第二鉄であり、前記安定化剤がマロン酸であり、前記阻害剤が水酸化テトラブチルアンモニウムであり、そして前記研磨材がシリカである、請求項5に記載の方法。
- 前記研磨材がシリカである、請求項1〜6のいずれか一項に記載の方法。
- (b)(iv)前記第一および第二の化学機械研磨組成物の混合物に酸化剤を添加することをさらに含む、請求項1〜7のいずれか一項に記載の方法。
- 前記酸化剤が過酸化水素である、請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/478,023 US7294576B1 (en) | 2006-06-29 | 2006-06-29 | Tunable selectivity slurries in CMP applications |
US11/478,023 | 2006-06-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009518144A Division JP5642962B2 (ja) | 2006-06-29 | 2007-06-13 | Cmp用途における調節可能な選択性スラリー |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014205851A JP2014205851A (ja) | 2014-10-30 |
JP5986146B2 true JP5986146B2 (ja) | 2016-09-06 |
Family
ID=38664578
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009518144A Active JP5642962B2 (ja) | 2006-06-29 | 2007-06-13 | Cmp用途における調節可能な選択性スラリー |
JP2014138830A Expired - Fee Related JP5986146B2 (ja) | 2006-06-29 | 2014-07-04 | 基板を化学機械的に研磨加工する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009518144A Active JP5642962B2 (ja) | 2006-06-29 | 2007-06-13 | Cmp用途における調節可能な選択性スラリー |
Country Status (10)
Country | Link |
---|---|
US (1) | US7294576B1 (ja) |
EP (1) | EP2038361A4 (ja) |
JP (2) | JP5642962B2 (ja) |
KR (1) | KR101252895B1 (ja) |
CN (1) | CN101479359B (ja) |
IL (1) | IL195697A (ja) |
MY (1) | MY144326A (ja) |
SG (1) | SG173331A1 (ja) |
TW (1) | TWI354697B (ja) |
WO (1) | WO2008005160A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
JP5361306B2 (ja) * | 2008-09-19 | 2013-12-04 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
CN102650059B (zh) * | 2009-06-26 | 2015-04-15 | 中国石油化工股份有限公司 | 一种丁基橡胶氯甲烷甘醇脱水再生系统的复合缓蚀剂 |
SG11201402486TA (en) * | 2012-03-30 | 2014-11-27 | Nitta Haas Inc | Polishing composition |
US8778212B2 (en) | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
KR102193325B1 (ko) * | 2014-04-18 | 2020-12-22 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 |
CN104513627B (zh) * | 2014-12-22 | 2017-04-05 | 深圳市力合材料有限公司 | 一种集成电路铜cmp组合物及其制备方法 |
KR101741707B1 (ko) | 2015-02-27 | 2017-05-30 | 유비머트리얼즈주식회사 | 연마 슬러리 및 이를 이용한 기판 연마 방법 |
KR101834418B1 (ko) * | 2015-10-02 | 2018-03-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
US9484212B1 (en) | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
KR102574851B1 (ko) * | 2015-12-17 | 2023-09-06 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
KR102543680B1 (ko) * | 2015-12-17 | 2023-06-16 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
KR102600276B1 (ko) * | 2016-03-01 | 2023-11-08 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 화학적 기계적 연마 방법 |
US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
US10727076B2 (en) * | 2018-10-25 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Slurry and manufacturing semiconductor using the slurry |
CN111218687B (zh) * | 2020-03-30 | 2022-01-21 | 惠州宇盛机械设备有限公司 | 一种用于精密铜合金工件的化学抛光液 |
KR102455159B1 (ko) * | 2020-07-17 | 2022-10-18 | 주식회사 케이씨텍 | 금속막 연마용 슬러리 조성물 |
WO2022024726A1 (ja) * | 2020-07-27 | 2022-02-03 | 山口精研工業株式会社 | 研磨剤組成物、及び研磨剤組成物を用いる研磨方法 |
KR102531445B1 (ko) * | 2020-10-28 | 2023-05-12 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
US5910022A (en) * | 1997-05-22 | 1999-06-08 | Vlsi Technology, Inc. | Method and system for tungsten chemical mechanical polishing for unplanarized dielectric surfaces |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
AU2001251318A1 (en) * | 2000-04-07 | 2001-10-23 | Cabot Microelectronics Corporation | Integrated chemical-mechanical polishing |
TW462908B (en) * | 2000-09-25 | 2001-11-11 | United Microelectronics Corp | Chemical mechanical polishing |
DE10109483A1 (de) | 2001-02-28 | 2002-09-05 | Clariant Gmbh | Oxalkylierungsprodukte hergestellt aus Epoxiden und Aminen und deren Verwendung in Pigmentpräparationen |
JP2003086548A (ja) * | 2001-06-29 | 2003-03-20 | Hitachi Ltd | 半導体装置の製造方法及びその研磨液 |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US20030162399A1 (en) * | 2002-02-22 | 2003-08-28 | University Of Florida | Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures |
KR20060024775A (ko) | 2003-05-12 | 2006-03-17 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 제2단계 구리 라이너 및 관련된 물질을 위한 cmp조성물및 그 이용방법 |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
JP2006049479A (ja) * | 2004-08-03 | 2006-02-16 | Nitta Haas Inc | 化学的機械研磨方法 |
US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
-
2006
- 2006-06-29 US US11/478,023 patent/US7294576B1/en active Active
-
2007
- 2007-06-13 SG SG2011047685A patent/SG173331A1/en unknown
- 2007-06-13 EP EP07796076A patent/EP2038361A4/en not_active Ceased
- 2007-06-13 WO PCT/US2007/013889 patent/WO2008005160A1/en active Application Filing
- 2007-06-13 JP JP2009518144A patent/JP5642962B2/ja active Active
- 2007-06-13 KR KR1020087031578A patent/KR101252895B1/ko active IP Right Grant
- 2007-06-13 CN CN2007800241788A patent/CN101479359B/zh not_active Expired - Fee Related
- 2007-06-13 MY MYPI20085322A patent/MY144326A/en unknown
- 2007-06-14 TW TW096121498A patent/TWI354697B/zh active
-
2008
- 2008-12-03 IL IL195697A patent/IL195697A/en not_active IP Right Cessation
-
2014
- 2014-07-04 JP JP2014138830A patent/JP5986146B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2038361A1 (en) | 2009-03-25 |
MY144326A (en) | 2011-08-29 |
IL195697A (en) | 2012-12-31 |
KR101252895B1 (ko) | 2013-04-09 |
JP2014205851A (ja) | 2014-10-30 |
WO2008005160A1 (en) | 2008-01-10 |
EP2038361A4 (en) | 2011-04-20 |
IL195697A0 (en) | 2009-09-01 |
JP5642962B2 (ja) | 2014-12-17 |
CN101479359B (zh) | 2012-12-26 |
CN101479359A (zh) | 2009-07-08 |
JP2009543336A (ja) | 2009-12-03 |
KR20090023640A (ko) | 2009-03-05 |
TWI354697B (en) | 2011-12-21 |
US7294576B1 (en) | 2007-11-13 |
TW200811277A (en) | 2008-03-01 |
SG173331A1 (en) | 2011-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5986146B2 (ja) | 基板を化学機械的に研磨加工する方法 | |
KR101069472B1 (ko) | 칼코게나이드 물질의 화학 기계적 평탄화 방법 | |
TWI542650B (zh) | 拋光液及化學機械拋光(cmp)方法 | |
JP5313900B2 (ja) | 半導体材料のcmpのための組成物と研磨方法 | |
US7754098B2 (en) | Chemical-mechanical polishing composition and method for using the same | |
US8008202B2 (en) | Ruthenium CMP compositions and methods | |
TWI730970B (zh) | 研磨方法及雜質去除用組成物以及基板及其製造方法 | |
KR20090107026A (ko) | 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 | |
CN110088359B (zh) | 高温cmp组合物及其使用方法 | |
JP6189571B1 (ja) | 研磨用組成物およびこれを用いた研磨方法、ならびにこれらを用いた研磨済研磨対象物の製造方法 | |
JP2011508423A (ja) | 金属除去速度を制御するためのハロゲン化物アニオン | |
US6830503B1 (en) | Catalyst/oxidizer-based CMP system for organic polymer films | |
JP4657408B2 (ja) | 金属膜用研磨剤 | |
EP3692107B1 (en) | Surface treated abrasive particles for tungsten buff applications | |
JP6542766B2 (ja) | 金属膜研磨スラリー組成物、及びこれを利用した金属膜研磨時に発生するスクラッチの減少方法 | |
US8541310B2 (en) | CMP compositions containing a soluble peroxometalate complex and methods of use thereof | |
US7776230B2 (en) | CMP system utilizing halogen adduct | |
KR102258900B1 (ko) | 금속막 연마용 슬러리 조성물 | |
CN113710761A (zh) | 用于钨擦光应用的经表面涂覆的研磨剂颗粒 | |
KR20050052180A (ko) | 다기능성 첨가제를 포함하는 화학적 기계적 연마용 슬러리 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151015 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160216 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160804 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5986146 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |