EP3116969B1 - Composition for tungsten cmp - Google Patents
Composition for tungsten cmp Download PDFInfo
- Publication number
- EP3116969B1 EP3116969B1 EP15760855.5A EP15760855A EP3116969B1 EP 3116969 B1 EP3116969 B1 EP 3116969B1 EP 15760855 A EP15760855 A EP 15760855A EP 3116969 B1 EP3116969 B1 EP 3116969B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- acid
- amine
- amine compound
- composition
- colloidal silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims description 181
- 229910052721 tungsten Inorganic materials 0.000 title claims description 57
- 239000010937 tungsten Substances 0.000 title claims description 57
- 238000005498 polishing Methods 0.000 claims description 158
- -1 amine compound Chemical class 0.000 claims description 107
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 84
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 81
- 239000008119 colloidal silica Substances 0.000 claims description 61
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 56
- 229910052742 iron Inorganic materials 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 36
- 239000007800 oxidant agent Substances 0.000 claims description 27
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 26
- 150000001412 amines Chemical class 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 239000003381 stabilizer Substances 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 21
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000001361 adipic acid Substances 0.000 claims description 6
- 235000011037 adipic acid Nutrition 0.000 claims description 6
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 claims description 6
- MUMVIYLVHVCYGI-UHFFFAOYSA-N n,n,n',n',n",n"-hexamethylmethanetriamine Chemical compound CN(C)C(N(C)C)N(C)C MUMVIYLVHVCYGI-UHFFFAOYSA-N 0.000 claims description 6
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 6
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 6
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims description 6
- RZPGGNHBJOLIQM-UHFFFAOYSA-N [I-].[I-].C(CCCCCCCCCCC)C(C(C([NH3+])(C)C)(C)C)(C[NH3+])CCCCCCCCCCCC Chemical compound [I-].[I-].C(CCCCCCCCCCC)C(C(C([NH3+])(C)C)(C)C)(C[NH3+])CCCCCCCCCCCC RZPGGNHBJOLIQM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- DSDVUXRTYBTVRN-UHFFFAOYSA-N dimethyl(tetradecyl)azanium;bromide Chemical compound [Br-].CCCCCCCCCCCCCC[NH+](C)C DSDVUXRTYBTVRN-UHFFFAOYSA-N 0.000 claims description 5
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 4
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims description 3
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 3
- 235000003704 aspartic acid Nutrition 0.000 claims description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 239000004202 carbamide Substances 0.000 claims description 3
- UEXRNIUHKWUZFJ-UHFFFAOYSA-L dodecyl-[6-[dodecyl(dimethyl)azaniumyl]hexyl]-dimethylazanium;diiodide Chemical compound [I-].[I-].CCCCCCCCCCCC[N+](C)(C)CCCCCC[N+](C)(C)CCCCCCCCCCCC UEXRNIUHKWUZFJ-UHFFFAOYSA-L 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 63
- 230000000052 comparative effect Effects 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 19
- 239000006185 dispersion Substances 0.000 description 18
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 17
- 238000000108 ultra-filtration Methods 0.000 description 17
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 14
- 239000003112 inhibitor Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000004471 Glycine Substances 0.000 description 7
- 125000003277 amino group Chemical group 0.000 description 7
- 230000003115 biocidal effect Effects 0.000 description 7
- 239000003139 biocide Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 6
- 239000011550 stock solution Substances 0.000 description 6
- 238000000733 zeta-potential measurement Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000717 retained effect Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 239000011149 active material Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 150000001767 cationic compounds Chemical class 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical class OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- CJAOGUFAAWZWNI-UHFFFAOYSA-N 1-n,1-n,4-n,4-n-tetramethylbenzene-1,4-diamine Chemical compound CN(C)C1=CC=C(N(C)C)C=C1 CJAOGUFAAWZWNI-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 229910007156 Si(OH)4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 239000012736 aqueous medium Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000009881 electrostatic interaction Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002690 malonic acid derivatives Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000693 micelle Substances 0.000 description 2
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 150000003891 oxalate salts Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000004627 regenerated cellulose Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- UZNHKBFIBYXPDV-UHFFFAOYSA-N trimethyl-[3-(2-methylprop-2-enoylamino)propyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)NCCC[N+](C)(C)C UZNHKBFIBYXPDV-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OJXXJELUFOEVBF-UHFFFAOYSA-L 1,5-dimethyl-1,5-diazoniabicyclo[3.2.2]nonane;dibromide Chemical compound [Br-].[Br-].C1C[N+]2(C)CC[N+]1(C)CCC2 OJXXJELUFOEVBF-UHFFFAOYSA-L 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 1
- MPNXSZJPSVBLHP-UHFFFAOYSA-N 2-chloro-n-phenylpyridine-3-carboxamide Chemical compound ClC1=NC=CC=C1C(=O)NC1=CC=CC=C1 MPNXSZJPSVBLHP-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- TZZGHGKTHXIOMN-UHFFFAOYSA-N 3-trimethoxysilyl-n-(3-trimethoxysilylpropyl)propan-1-amine Chemical compound CO[Si](OC)(OC)CCCNCCC[Si](OC)(OC)OC TZZGHGKTHXIOMN-UHFFFAOYSA-N 0.000 description 1
- NUKYPUAOHBNCPY-UHFFFAOYSA-N 4-aminopyridine Chemical compound NC1=CC=NC=C1 NUKYPUAOHBNCPY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical class [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- PLZVEHJLHYMBBY-UHFFFAOYSA-N Tetradecylamine Chemical compound CCCCCCCCCCCCCCN PLZVEHJLHYMBBY-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000000656 azaniumyl group Chemical group [H][N+]([H])([H])[*] 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229960000686 benzalkonium chloride Drugs 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 description 1
- VJGNLOIQCWLBJR-UHFFFAOYSA-M benzyl(tributyl)azanium;chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CC1=CC=CC=C1 VJGNLOIQCWLBJR-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- HUTDDBSSHVOYJR-UHFFFAOYSA-H bis[(2-oxo-1,3,2$l^{5},4$l^{2}-dioxaphosphaplumbetan-2-yl)oxy]lead Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O HUTDDBSSHVOYJR-UHFFFAOYSA-H 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000008364 bulk solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- SXPWTBGAZSPLHA-UHFFFAOYSA-M cetalkonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 SXPWTBGAZSPLHA-UHFFFAOYSA-M 0.000 description 1
- 229960000228 cetalkonium chloride Drugs 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 229940031728 cocamidopropylamine oxide Drugs 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229950000405 decamethonium Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- IQDGSYLLQPDQDV-UHFFFAOYSA-N dimethylazanium;chloride Chemical group Cl.CNC IQDGSYLLQPDQDV-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229960004979 fampridine Drugs 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- LNOZJRCUHSPCDZ-UHFFFAOYSA-L iron(ii) acetate Chemical class [Fe+2].CC([O-])=O.CC([O-])=O LNOZJRCUHSPCDZ-UHFFFAOYSA-L 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- HMMPCBAWTWYFLR-UHFFFAOYSA-N n-pyridin-2-ylpyridin-2-amine Chemical compound C=1C=CC=NC=1NC1=CC=CC=N1 HMMPCBAWTWYFLR-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 150000003890 succinate salts Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 description 1
- ALYGOOWRCDZDTJ-UHFFFAOYSA-L tributyl-[6-(tributylazaniumyl)hexyl]azanium;dihydroxide Chemical compound [OH-].[OH-].CCCC[N+](CCCC)(CCCC)CCCCCC[N+](CCCC)(CCCC)CCCC ALYGOOWRCDZDTJ-UHFFFAOYSA-L 0.000 description 1
- WRTMQOHKMFDUKX-UHFFFAOYSA-N triiodide Chemical compound I[I-]I WRTMQOHKMFDUKX-UHFFFAOYSA-N 0.000 description 1
- HLXQFVXURMXRPU-UHFFFAOYSA-L trimethyl-[10-(trimethylazaniumyl)decyl]azanium;dibromide Chemical compound [Br-].[Br-].C[N+](C)(C)CCCCCCCCCC[N+](C)(C)C HLXQFVXURMXRPU-UHFFFAOYSA-L 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- polishing compositions for polishing metal layers (such as tungsten) on a semiconductor substrate may include abrasive particles suspended in an aqueous solution and chemical accelerators such as oxidizers, chelating agents, catalysts, and the like.
- the substrate (wafer) to be polished is mounted on a carrier (polishing head) which is in turn mounted on a carrier assembly and positioned in contact with a polishing pad in a CMP apparatus (polishing tool).
- the carrier assembly provides a controllable pressure to the substrate, pressing the substrate against the polishing pad.
- the substrate and pad are moved relative to one another by an external driving force. The relative motion of the substrate and pad abrades and removes a portion of the material from the surface of the substrate, thereby polishing the substrate.
- the polishing of the substrate by the relative movement of the pad and the substrate may be further aided by the chemical activity of the polishing composition (e.g., by an oxidizing agent and other chemical compounds present in the CMP composition) and/or the mechanical activity of an abrasive suspended in the polishing composition.
- US 2013/327977 A1 describes compositions and methods for polishing a molybdenum metal-containing surface.
- the polishing composition (slurry) described comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent.
- the surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof.
- tungsten is deposited over a dielectric and within openings formed therein. The excess tungsten over the dielectric layer is then removed during a CMP operation to form tungsten plugs and interconnects within the dielectric.
- CMP operations e.g., in tungsten CMP operations.
- Array erosion also referred to as oxide erosion
- plug and line recessing and tungsten etching defects are known to compromise planarity and overall device integrity. For example, excessive array erosion may lead to difficulties in subsequent lithography steps as well as cause electrical contact problems that can degrade electrical performance. Tungsten etching/corrosion and plug and line recessing may also degrade electrical performance or even cause device failure.
- tungsten CMP slurries commonly make use of a hydrogen peroxide oxidizer. While there are many advantages to the use of hydrogen peroxide, it is known to cause excessive tungsten etching in certain CMP operations. In such operations it may be advantageous to reduce the rate at which tungsten etches (corrodes) in the CMP composition. Thus, there is a need in the industry for tungsten CMP slurries (or compositions) that are less corrosive towards tungsten (i.e., in which tungsten etches at a lower rate).
- a chemical mechanical polishing composition for polishing a substrate having a tungsten layer comprises: a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, wherein the amine compound comprises a polyquaternary amine compound and the amine compound comprises an alkyl group having at least 12 carbon atoms, and an iron containing accelerator, wherein the colloidal silica is treated with an aminosilane compound and wherein the polishing composition has a pH of less than 7.
- a method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method comprising (a) contacting the substrate with the above described polishing composition, (b) moving the polishing composition relative to the substrate, and (c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
- a chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and an amine compound in solution in the liquid carrier.
- the amine compound comprises a polyquaternary amine compound and the amine compound includes an alkyl group having 12 or more carbon atoms.
- the polishing composition further includes an iron containing accelerator, such as an iron containing catalyst.
- the polishing composition has a pH of less than 7.
- the polishing composition may further optionally include a stabilizer bound to the iron containing accelerator, a hydrogen peroxide oxidizer, and/or a pH in a range from 2.0 to 3.5.
- the colloidal silica is also treated with an aminosilane compound.
- the polishing composition contains an abrasive including colloidal silica particles which are desirably suspended in a liquid carrier (e.g., water).
- a liquid carrier e.g., water
- colloidal silica particles refers to silica particles that are prepared via a wet process rather than a pyrogenic or flame hydrolysis process which produces structurally different particles.
- the colloidal silica particles may be aggregated or non-aggregated. Non-aggregated particles are individually discrete particles that may be spherical or nearly spherical in shape, but can have other shapes as well (such as generally elliptical, square, or rectangular cross-sections).
- Aggregated particles are particles in which multiple discrete particles are clustered or bonded together to form aggregates having generally irregular shapes.
- the colloidal silica is precipitated or condensation-polymerized silica, which may be prepared using any method known to those of ordinary skill in the art, such as by the sol gel method or by silicate ion-exchange.
- Condensation-polymerized silica particles are often prepared by condensing Si(OH) 4 to form substantially spherical particles.
- the precursor Si(OH) 4 may be obtained, for example, by hydrolysis of high purity alkoxysilanes, or by acidification of aqueous silicate solutions.
- Such abrasive particles may be prepared, for example, in accordance with U.S. Pat. No.
- 5,230,833 or may be obtained as any of various commercially available products such as the BINDZII, 50/80, 30/310, and 40/130 products from EKA Chemicals, the Fuso PL-1, PL-2, PL-3, and PL-3H products, and the Nalco 1034A, 1050, 2327, and 2329 products, as well as other similar products available from DuPont, Bayer, Applied Research, Nissan Chemical (the SNOWTEX products), and Clariant.
- BINDZII the Fuso PL-1, PL-2, PL-3, and PL-3H products
- Nalco 1034A, 1050, 2327, and 2329 products as well as other similar products available from DuPont, Bayer, Applied Research, Nissan Chemical (the SNOWTEX products), and Clariant.
- the particle size of a particle is the diameter of the smallest sphere that encompasses the particle.
- the abrasive particles may have any suitable particle size.
- the abrasive particles may have an average particle size of 5 nm or more (e.g., 10 nm or more, 15 nm or more, 20 nm or more, or 30 nm or more).
- the abrasive particles may have an average particle size of 150 nm or less (e.g., 130 nm or less, 80 nm or less, 50 nm or less, or 30 nm or less).
- the abrasive particles may have an average particle size in a range from 10 nm to 150 nm (e.g., from 20 nm to 130 nm, from 15 nm to 100 nm, from 20 nm to 80 nm, or from 20 nm to 60 nm).
- the polishing composition may include any suitable amount of colloidal silica particles.
- the polishing composition typically includes 0.01 wt. % or more colloidal silica (e.g., 0.05 wt. % or more). More typically, the polishing composition may include 0.1 wt. % or more (e.g., 1 wt. % or more, 5 wt. % or more, 7 wt. % or more, 10 wt. % or more, or 12 wt. % or more) colloidal silica particles.
- the amount of colloidal silica particles in the polishing composition is typically 30 wt. % or less, and more typically 20 wt. % or less (e.g., 15 wt.
- the amount of colloidal silica particles in the polishing composition is in a range from 0.01 wt. % to 20 wt. %, and more preferably from 0.05 wt. % to 15 wt. % (e.g., from 0.1 wt. % to 10 wt. %, from 0.1 wt. % to 4 wt. %, from 0.1 wt. % to 3 wt. %, from 0.1 wt. % to 2 wt. %, or from 0.2 wt. % to 2 wt. %).
- the liquid carrier is used to facilitate the application of the abrasive and any optional chemical additives to the surface of a suitable substrate to be polished (e.g., planarized).
- the liquid carrier may be any suitable carrier (e.g., a solvent) including lower alcohols (e.g., methanol, ethanol, etc.), ethers (e.g., dioxane, tetrahydrofuran, etc.), water, and mixtures thereof.
- the liquid carrier comprises, consists essentially of, or consists of water, more preferably deionized water.
- the colloidal silica particles have a positive charge of at least 6 mV in the polishing composition.
- the charge on dispersed particles such as colloidal silica particles is commonly referred to in the art as the zeta potential (or the electrokinetic potential).
- the zeta potential of a particle refers to the electrical potential difference between the electrical charge of the ions surrounding the particle and the electrical charge of the bulk solution of the polishing composition (e.g., the liquid carrier and any other components dissolved therein).
- the zeta potential is typically dependent on the pH of the aqueous medium. For a given polishing composition, the isoelectric point of the particles is defined as the pH at which the zeta potential is zero.
- the zeta potential of a dispersion such as a polishing composition may be obtained using commercially available instrumentation such as the Zetasizer available from Malvern Instruments, the ZetaPlus Zeta Potential Analyzer available from Brookhaven Instruments, and an electro-acoustic spectrometer available from Dispersion Technologies, Inc.
- the colloidal silica particles in the polishing composition have a permanent positive charge of 6 mV or more (e.g., 10 mV or more, 15 mV or more, 20 mV or more, 25 mV or more, or 30 mV or more).
- the colloidal silica particles have a permanent positive charge in a range from 6 mV to 50 mV (e.g., 10 mV to 45 mV, 15 mV to 40 mV, or 20 mV to 40 mV).
- permanent positive charge it is meant that the positive charge on the silica particles is not readily reversible, for example, via flushing, dilution, filtration, and the like.
- a permanent positive charge may be the result, for example, of covalently bonding a cationic compound with the colloidal silica.
- a permanent positive charge is in contrast to a reversible positive charge that may be the result, for example, of an electrostatic interaction between a cationic compound and the colloidal silica.
- a permanent positive charge of at least 6 mV means that the zeta potential of the colloidal silica particles remains above 6 mV after the following three step ultrafiltration test.
- a volume of the polishing composition e.g., 200 ml
- a Millipore Ultracell regenerated cellulose ultrafiltration disk e.g., having a MW cutoff of 100,000 Daltons and a pore size of 6.3 nm.
- the remaining dispersion (the dispersion that is retained by the ultrafiltration disk) is collected and replenished to the original volume with pH adjusted deionized water.
- the deionized water is pH adjusted to the original pH of the polishing composition using a suitable inorganic acid such as nitric acid.
- This procedure is repeated for a total of three ultrafiltration cycles (each of which includes an ultrafiltration step and a replenishing step).
- the zeta-potential of the triply ultra-filtered and replenished polishing composition is then measured and compared with the zeta potential of the original polishing composition.
- This three step ultrafiltration test is further illustrated below by way of example (in Example 5).
- the dispersion retained by the ultrafiltration disk includes the colloidal silica particles and any chemical compounds (e.g., cationic compounds) that may be associated with the surface of the particles (e.g., bonded or attached to or electrostatically interacting with the particle surface). At least a portion of the liquid carrier and the chemical compounds dissolved therein pass through the ultrafiltration disk. Replenishing the retained dispersion to the original volume is believed to upset the equilibrium in the original polishing composition such that the chemical compounds associated with the particle surface may tend towards a new equilibrium.
- any chemical compounds e.g., cationic compounds
- the measured zeta potential may be observed to increase due to the reduced ionic strength (owing to dilution) of the triply ultra-filtered and replenished polishing composition.
- any reduction in the positive charge (reduction in the positive zeta potential) on the particles resulting from the aforementioned three step ultrafiltration test is less than 10 mV (e.g., less than 7 mV, less than 5 mV, or even less than 2mV).
- the polishing composition is acidic having a pH of less than 7.
- the polishing composition has a pH of 6 or less (e.g., 5 or less, or 4 or less). More preferably, the polishing composition may have a pH in a range from 1 to 6 (e.g., from 1.5 to 5, or from 2 to 4, or from 2 to 3.5).
- the pH of the polishing composition may be achieved and/or maintained by any suitable means.
- the polishing composition may include substantially any suitable pH adjusting agents or buffering systems.
- suitable pH adjusting agents may include nitric acid, sulfuric acid, phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, maleic acid, ammonium hydroxide, and the like while suitable buffering agents may include phosphates, sulfates, acetates, malonates, oxalates, borates, ammonium salts, and the like.
- Colloidal silica particles having a permanent positive charge in the polishing composition are achieved, for example, via treating the particles with at least one aminosilane compound.
- Such compounds include primary aminosilanes, secondary aminosilanes, tertiary aminosilanes, quaternary aminosilanes, and multi-podal (e.g., dipodal) aminosilanes.
- the aminosilane compound can be any suitable aminosilane, such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxy
- any suitable method of treating the colloidal silica particles may be used.
- the colloidal silica particles may be treated with the aminosilane compound before mixing with the other components of the polishing composition or the aminosilane and the colloidal silica particles may be added simultaneously to the other components of the polishing composition.
- the aminosilane compound may be present in the polishing composition in any suitable amount.
- the amount of aminosilane utilized may depend on several factors, for example, including the particle size, the surface area of the particle, the particular aminosilane compound used, and the desired charge on the particle. In general the amount of aminosilane used increases with decreasing particle size (and therefore increasing surface area) and increasing charge on the particle.
- the polishing composition may include 5 ppm or more (e.g., 10 ppm or more, 15 ppm or more, or 20 ppm or more) of the aminosilane compound.
- the polishing composition preferably includes an amount of aminosilane sufficient to provide the desired permanent positive charge without using an excess.
- the polishing composition may include 500 ppm or less (e.g., 300 ppm or less, or 200 ppm or less, or 150 ppm or less) of the aminosilane compound.
- the polishing composition includes a range from 5 ppm to 500 ppm (e.g., from 10 ppm to 300 ppm, from 15 ppm to 200 ppm, or from 20 ppm to 150 ppm) of the aminosilane compound.
- the polishing composition further includes an iron containing accelerator.
- An iron containing accelerator as used herein is an iron containing chemical compound that increases the removal rate of tungsten during a tungsten CMP operation.
- the iron containing accelerator may include an iron containing catalyst such as is disclosed in U.S. Patents 5,958,288 and 5,980,775 .
- Such an iron containing catalyst may be soluble in the liquid carrier and may include, for example, ferric (iron III) or ferrous (iron II) compounds such as iron nitrate, iron sulfate, iron halides, including fluorides, chlorides, bromides, and iodides, as well as perchlorates, perbromates and periodates, and organic iron compounds such as iron acetates, acetylacetonates, citrates, gluconates, malonates, oxalates, phthalates, and succinates, and mixtures thereof.
- ferric (iron III) or ferrous (iron II) compounds such as iron nitrate, iron sulfate, iron halides, including fluorides, chlorides, bromides, and iodides, as well as perchlorates, perbromates and periodates
- organic iron compounds such as iron acetates, acetylacetonates, citrates, gluconates, malonates, oxalates,
- An iron containing accelerator may also include an iron containing activator (e.g., a free radical producing compound) or an iron containing catalyst associated with (e.g., coated or bonded to) the surface of the colloidal silica particle such as is disclosed in U.S. Patents 7,029,508 and 7,077,880 .
- the iron containing accelerator may be bonded with the silanol groups on the surface of the colloidal surface particle.
- the iron containing accelerator may include a boron containing stabilizer and an iron containing catalyst.
- the stabilizer and catalyst may occupy substantially any percentage of the available surface sites on the colloidal silica particles, for example, greater than 1%, greater than 50%, or greater than 80% of the available surface sites.
- the amount of iron containing accelerator in the polishing composition may be varied depending upon the oxidizing agent used and the chemical form of the accelerator.
- the catalyst may be present in the composition in an amount sufficient to provide a range from 1 to 3000 ppm Fe based on the total weight of the composition.
- the polishing composition preferably includes 1 ppm Fe or more (e.g., 5 ppm or more, 10 ppm or more, or 20 ppm or more).
- the polishing composition preferably includes 500 ppm Fe or less (e.g., 200 ppm or less, 100 ppm or less, or 50 ppm or less).
- the polishing composition may thus include a range from 1 to 500 ppm Fe (e.g., from 3 to 200 ppm, from 5 to 100 ppm, or from 10 to 50 ppm).
- the polishing composition may further include a stabilizer. Without such a stabilizer, the iron containing accelerator and the oxidizing agent may react in a manner that degrades the oxidizing agent rapidly over time.
- the addition of a stabilizer tends to reduce the effectiveness of the iron containing accelerator such that the choice of the type and amount of stabilizer added to the polishing composition may have a significant impact on CMP performance.
- the addition of a stabilizer may lead to the formation of a stabilizer/accelerator complex that inhibits the accelerator from reacting with the oxidizing agent while at the same time allowing the accelerator to remain sufficiently active so as to promote rapid tungsten polishing rates.
- Useful stabilizers include phosphoric acid, organic acids, phosphonate compounds, nitriles, and other ligands which bind to the metal and reduce its reactivity toward hydrogen peroxide decomposition and mixture thereof.
- the acid stabilizers may be used in their conjugate form, e.g., the carboxylate can be used instead of the carboxylic acid.
- the term "acid” as it is used to describe useful stabilizers also means the conjugate base of the acid stabilizer.
- adipic acid means adipic acid and its conjugate base.
- Stabilizers can be used alone or in combination and significantly decrease the rate at which oxidizing agents such as hydrogen peroxide decomposes.
- Preferred stabilizers include phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid (EDTA), propylenediaminetetraacetic acid (PDTA), and mixtures thereof.
- the preferred stabilizers may be added to the compositions and slurries of this invention in an amount ranging from 1 equivalent per iron containing accelerator to 3.0 weight percent or more.
- the term "equivalent per iron containing accelerator” means one molecule of stabilizer per iron ion in the composition. For example 2 equivalents per iron containing accelerator means two molecules of stabilizer for each catalyst ion.
- the polishing composition may further include an oxidizing agent.
- the oxidizing agent may be added to the polishing composition during the slurry manufacturing process or just prior to the CMP operation (e.g., in a tank located at the semiconductor fabrication facility).
- Preferable oxidizing agents include inorganic or organic per-compounds.
- a per-compound as defined by Hawley's Condensed Chemical Dictionary is a compound containing at least one peroxy group (-O--O-) or a compound containing an element in its highest oxidation state.
- Examples of compounds containing an element in its highest oxidation state include but are not limited to periodic acid, periodate salts, perbromic acid, perbromate salts, perchloric acid, perchlorate salts, perboric acid, and perborate salts and permanganates.
- the most preferred oxidizing agents is hydrogen peroxide.
- the oxidizing agent may be present in the polishing composition in an amount ranging, for example, from 0.1 to 10 weight percent.
- the oxidizer may be present in the polishing composition in an amount ranging from 0.1 to 6 weight percent (e.g., from 0.2 to 5 weight percent, from 0.5 to 4 weight percent, or from 1 to 3 weight percent).
- the polishing composition further includes an amine compound in solution in the liquid carrier.
- the amine compound may inhibit tungsten etching (i.e., reduces tungsten etch rates) in the presence of an oxidizer such as hydrogen peroxide.
- the addition of an amine compound may also have a negative impact on CMP performance.
- the amine compound may be selected such that it advantageously inhibits tungsten etching while at the same time allowing for high tungsten removal rates during the CMP operation.
- the amine compound (or compounds) comprises a polyquaternary amine compound and the amine compound comprises an alkyl group having 12 or more carbon atoms.
- the amine compound includes a long chain alkyl group having at least 12 carbon atoms (e.g. at least 14 carbon atoms).
- the amine compound include a polycationic amine.
- a polycationic amine (as the term is used herein) is an amine compound having multiple (two or more) amine groups in which each of the amine groups is cationic (i.e., has a positive charge).
- the polycationic amine is a polyquaternary amine.
- polyquaternary amine it is meant that the amine compound includes from 2 to 4 quaternary ammonium groups such that the polyquaternary amine is a diquaternary amine, a triquaternary amine, or a tetraquaternary amine compound.
- Diquaternary amine compounds may include, for example, N,N'-methylenebis(dimethyltetradecylammonium bromide), N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, N,N'-hexamethylenebis(tributylammonium hydroxide), didodecyl-tetramethyl-1,4-butanediaminium diiodide, and the like.
- Triquaternary amine compounds may include, for example, N(1),N(6)-didoecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide.
- the polyquaternary amine compound includes a long chain alkyl grouphaving 12 or more carbon atoms.
- a polyquaternary amine compound having a long chain alkyl group may include N,N'-methylenebis (dimethyltetradecylammonium bromide), N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide.
- a polycationic amine may also be polycationic in that each of the amine groups is protonated (and therefore has a positive charge).
- a dicationic amine such as tetramethyl-p-phenylenediamine includes two tertiary amine groups that may be protonated (and therefore positively charged) at polishing composition pH values less than the pKa of the amine compound.
- the amine compound may include an amine based polymer.
- a polymer includes four or more amine groups.
- the amine based polymer may include, for example, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, and polymers including the following amine containing functional groups methacryloylox-ethyl trimethyl ammonium methyl sulfate, diallyl dimethyl ammonium chloride, and methacrylamido-propyl trimethyl ammonium chloride.
- the amine compound does not include a heterocyclic polyamine.
- Heterocyclic polyamines are amine compounds having multiple amine groups in which at least one of the amine groups is located in a ring (e.g., a ring including 3, 4, 5, 6, 7, or 8 members).
- Such heterocyclic amine compounds include, for example, certain pyridine, pyridylamine, pyrimidine, and azole compounds. While such heterocyclic polyamines (such as benzotriazole) are known inhibitors of copper etching, their utility in inhibiting tungsten etching tends to be limited. As such they are not particularly useful in the disclosed tungsten CMP compositions.
- the polishing composition may include substantially any suitable concentration of the amine compound.
- concentration is desirably high enough to provide adequate etch inhibition, but low enough so that the compound is soluble and so as not to reduce tungsten polishing rates below acceptable levels.
- soluble it is meant that the compound is fully dissolved in the liquid carrier or that it forms micelles in the liquid carrier or is carried in micelles.
- concentration of the amine compound may be necessary to vary the concentration of the amine compound depending upon numerous various factors, for example, including the solubility of the amine compound, the number of amine groups in the amine compound, the length of an alkyl group in the amine compound, the relationship between etch rate inhibition and polishing rate inhibition, the oxidizing agent used, the concentration of the oxidizing agent, and so on.
- the concentration of the amine compound in the polishing composition is in a range from 0.1 ⁇ M to 10 mM (i.e., from 10 -7 to 10 -2 molar).
- the polishing composition may optionally further include a biocide.
- the biocide may include any suitable biocide, for example an isothiazolinone biocide.
- the amount of biocide in the polishing composition typically is in a range from 1 ppm to 50 ppm, and preferably from 1 ppm to 20 ppm.
- the polishing composition may be prepared using any suitable techniques, many of which are known to those skilled in the art.
- the polishing composition may be prepared in a batch or continuous process. Generally, the polishing composition may be prepared by combining the components thereof in any order.
- component as used herein includes the individual ingredients (e.g., the colloidal silica, the iron containing accelerator, the amine compound, etc.)
- the silica may be dispersed in the aqueous liquid carrier.
- the silica may then be treated, with the aminosilane so as to produce generate a colloidal silica having a permanent positive charge of at least 6 mV.
- Other components such as an iron containing accelerator, a stabilizer, and the amine compound may then be added and mixed by any method that is capable of incorporating the components into the polishing composition.
- the oxidizing agent may be added at any time during the preparation of the polishing composition.
- the polishing composition may be prepared prior to use, with one or more components, such as the oxidizing agent, being added just prior to the CMP operation (e.g., within 1 minute, or within 10 minutes, or within 1 hour, or within 1 day, or within 1 week of the CMP operation).
- the polishing composition also may also be prepared by mixing the components at the surface of the substrate (e.g., on the polishing pad) during the CMP operation.
- the polishing composition may be supplied as a one-package system comprising a colloidal silica having a permanent positive charge of at least 6 mV, an amine compound, an iron containing accelerator and optional stabilizer, an optional biocide, and water.
- the oxidizing agent desirably is supplied separately from the other components of the polishing composition and is combined, e.g., by the end-user, with the other components of the polishing composition shortly before use (e.g., 1 week or less prior to use, 1 day or less prior to use, 1 hour or less prior to use, 10 minutes or less prior to use, or 1 minute or less prior to use).
- Various other two-container, or three- or more-container, combinations of the components of the polishing composition are within the knowledge of one of ordinary skill in the art.
- the polishing composition of the invention may also be provided as a concentrate which is intended to be diluted with an appropriate amount of water prior to use.
- the polishing composition concentrate may include the colloidal silica having a permanent positive charge of at least 6 mV, the amine compound, the iron containing accelerator and optional stabilizer, the optional biocide, and water, with or without the oxidizing agent, in amounts such that, upon dilution of the concentrate with an appropriate amount of water, and the oxidizing agent if not already present in an appropriate amount, each component of the polishing composition will be present in the polishing composition in an amount within the appropriate range recited above for each component.
- the colloidal silica having a permanent positive charge of at least 6 mV, the amine compound, the optional iron containing accelerator and the stabilizer may each be present in the polishing composition in an amount that is 2 times (e.g., 3 times, 4 times, 5 times, or even 10 times) greater than the concentration recited above for each component so that, when the concentrate is diluted with an equal volume of (e.g., 2 equal volumes of water, 3 equal volumes of water, 4 equal volumes of water, or even 9 equal volumes of water respectively), along with the oxidizing agent in a suitable amount, each component will be present in the polishing composition in an amount within the ranges set forth above for each component.
- the concentrate may contain an appropriate fraction of the water present in the final polishing composition in order to ensure that other components are at least partially or fully dissolved in the concentrate.
- the polishing composition of the invention may be used to polish any substrate, the polishing composition is particularly useful in the polishing of a substrate comprising at least one metal including tungsten and at least one dielectric material.
- the tungsten layer may be deposited over one or more barrier layers, for example, including titanium and/or titanium nitride (TiN).
- the dielectric layer may be a metal oxide such as a silicon oxide layer derived from tetraethylorthosilicate (TEOS), porous metal oxide, porous or non-porous carbon doped silicon oxide, fluorine-doped silicon oxide, glass, organic polymer, fluorinated organic polymer, or any other suitable high or low-k insulating layer.
- TEOS tetraethylorthosilicate
- the polishing method of the invention is particularly suited for use in conjunction with a chemical mechanical polishing (CMP) apparatus.
- the apparatus includes a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad.
- the polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and the polishing composition of the invention and then the polishing pad moving relative to the substrate, so as to abrade at least a portion of the substrate (such as tungsten, titanium, titanium nitride, and/or a dielectric material as described herein) to polish the substrate.
- the substrate such as tungsten, titanium, titanium nitride, and/or a dielectric material as described herein
- a substrate can be planarized or polished with the chemical mechanical polishing composition with any suitable polishing pad (e.g., polishing surface).
- suitable polishing pads include, for example, woven and non-woven polishing pads.
- suitable polishing pads can comprise any suitable polymer of varying density, hardness, thickness, compressibility, ability to rebound upon compression, and compression modulus.
- Suitable polymers include, for example, polyvinylchloride, polyvinylfluoride, nylon, fluorocarbon, polycarbonate, polyester, polyacrylate, polyether, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, coformed products thereof, and mixtures thereof.
- a number of polishing compositions were prepared in order to evaluate various performance metrics of the compositions.
- a standard composition was used as a base composition for all formulations with only the amount and type of amine compound varied.
- the standard composition was prepared as follows: A dispersion was prepared including 3.0 weight percent colloidal silica and 0.01 weight percent (100 ppm) of bis-(gamma-trimethoxysilylpropyl)amine (an aminosilane).
- the dispersion was prepared by mixing a concentrated colloidal silica dispersion having a mean particle size of 75 nm (such as are commercially available from Akso Nobel, Fuso, and Nalco as listed above) with the aminosilane and water.
- the dispersion was mixed for a number of hours to adequately treat the colloidal silica with the aminosilane.
- the treated colloidal silica dispersion was then added to a mixture including malonic acid, ferric nitrate, and water such that the final concentrations in the composition were as follows: 2.0 weight percent treated colloidal silica, 0.0031 weight percent ferric nitrate, and 0.067 weight percent malonic acid.
- the pH of the mixture was then adjusted to 2.4 using nitric acid. This mixture was used as a stock solution in which various amine compounds were dissolved prior to performing zeta potential measurements, static etch tests, and CMP tests as described in more detail in the subsequent examples.
- the tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for various polishing compositions.
- This example demonstrates the effect of various amine compounds as a function of the longest alkyl chain length in the amine compound.
- the composition was first heated to 45 degrees C after which hydrogen peroxide was added to a concentration of 2 percent. After waiting 5 minutes for the temperature to return to 45 degrees, a two-inch wafer having a tungsten layer was submersed in the polishing compositions for 5 minutes. Tungsten removal rates were determined via resistivity measurements made before and after immersion in the polishing compositions.
- the zeta potential measurements were obtained using a DT1200 electro-acoustic spectrometer available from Dispersion Technologies, Inc.
- the polishing compositions (Controls A and B and comparative compositions 2A through 2M) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1.
- the alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica particles are indicated in Table 1.
- Comparative samples 2A through 2M included the following amine compounds: (2A) octadecylmethyl[polyoxyethylene (15)] ammonium chloride, (2B) cocoalkylmethyl[polyoxyethylene (15)] ammonium chloride, (2C) benzalkonium chloride, (2D) hexadecylamine, (2E) benzyldimethylhexadecylammonium chloride, (2F) tetradecylamine, (2G) dodecylamine, (2H) decylamine, (2I) octylamine, (2J) cocamidopropylamine oxide, (2K) benzyltributylammonium chloride, and (2L) tetrabutylammonium hydroxde.
- compositions 2A-2G which included amine compounds having an alkyl chain length greater than 10 (12, 14, 16, and 18) exhibited W etch rates of one-tenth or less that of control A (no inhibitor) and one-seventh or less that of control B (glycine).
- the tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for various other polishing compositions.
- This example demonstrates the effect of various amine containing polymers (3A-3E).
- the tungsten etch rates and zeta potential measurements were obtained using the same methodologies as described in Example 2.
- the polishing compositions (controls A and B and comparative compositions 3A through 3E) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1.
- the alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica are indicated in Table 2.
- Comparative samples 3A through 3E included the following amine compounds: (3A) Merquat 280 which is a polymer having alternating diallyl dimethyl ammonium chloride and acrylic acid groups and having a molecular weight of 450,000, (3B) Merquat 106 which is a polymer having repeating dimethyl ammonium chloride groups and a molecular weight of 15,000, (3C) pentaethylenehexamine, (3D) tetraethylenepentamine, and (3E) pentamethyldiethylenetriamine.
- compositions 3A, 3B, 3C, and 3D exhibited W etch rates significantly less than that of the controls.
- the etch rate of composition 3E was similar to that of control A (no inhibitor).
- the tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for still other polishing compositions.
- This example demonstrates the effect of various polycationic amine containing compounds (4A-4K).
- the tungsten etch rates and zeta potential measurements were obtained using the same methodologies as described in Example 2.
- the polishing compositions (controls A and B and compositions 4A through 4K) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1.
- the alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica are indicated in Table 3.
- Samples 4A through 4K included the following amine compounds: (4A) N,N'-methylenebis (dimethyltetradecylammonium bromide), (4B (comparative sample not part of the invention )) 1,1,4,4-tetrabutylpiperazinedium dibromide, (4C) N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, (4D (comparative sample not part of the invention)) 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, (4E) N(1),N(6)-didoecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, (4F (comparative sample not part of the invention)) decamethonium bromide, (4G(comparative sample not part of the invention)) methanete
- compositions 4A, 4C, 4D, 4E, 4J, and 4K may exhibit W etch rates significant less than that of the controls (depending on the concentration of the inhibitor).
- the tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for various other polishing compositions.
- This example demonstrates the effect of various heterocyclic polyamine compounds.
- the tungsten etch rates and zeta potential measurements were obtained using the same methodologies as described in Example 2.
- the polishing compositions (controls A and B and compositions 5A through 5F) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1.
- the alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica are indicated in Table 4.
- Samples 5A through 5F included the following amine compounds: (5A) 2-(aminomethy)pyridine, (5B) 2,2'dipyridylamine, (5C) benzotriazole, (5D) 2-aminopyrimidie, (5E) 4-aminopyridine, and (5F) 5-aminotetrazole.
- compositions 5A through 5F exhibited a W etch rate of less than that of the glycine control. All but composition 5B exhibited W etch rates about equal to or greater than the control including no inhibitor.
- Zeta potential measurements and conductivity measurements were obtained for treated silica samples before and after filtration.
- a 200 ml volume of each composition was filtered through a Millipore Ultracell regenerated cellulose ultrafiltration disk (having a MW cutoff of 100,000 Daltons and a pore size of 6.3 nm).
- the remaining dispersion (the dispersion that was retained by the ultrafiltration disk) was collected and replenished to the original 200 ml volume using deionized water adjusted to pH 2.6 with nitric acid. This procedure was repeated for a total of three ultrafiltration cycles (each of which includes an ultrafiltration step and a replenishing step).
- polishing composition 6A contained a 55 nm colloidal silica treated with 3-(aminopropyl)trimethoxylsilane while polishing composition 6B contained a 55 nm colloidal silica treated with tetrabutylammonium hydroxide.
- polishing composition 6B contained a 55 nm colloidal silica treated with tetrabutylammonium hydroxide.
- the zeta potential and electrical conductivity of the original compositions were measured before and after above described ultrafiltration procedure.
- the zeta potential of sample 6A is not changed by filtration indicating that the colloidal silica has a permanent positive charge of 41 mV.
- the zeta potential of sample 6B decreased from 10 to 3 mV indicating that the positive charge colloidal silica was not permanent.
- Both the tungsten etch rate and the tungsten polishing rate were evaluated in this example for various polishing compositions.
- This example demonstrates the effect of various amine compounds on the tungsten etch rates and tungsten polishing rates for the corresponding polishing compositions.
- the CMP compositions were obtained using the procedure described in Example 1. The compositions were similar to those described above with the exception that they included the following final concentrations: 1.5 weight percent treated colloidal silica, 0.0012 weight percent ferric nitrate, 0.0267 weight percent malonic acid, and 0.5 percent hydrogen peroxide.
- the tungsten etch rates were obtained using the same methodology described in Example 2.
- the tungsten polishing rates were obtained using a Mirra ® CMP Tool (available from Applied Materials). 20.32 cm (8 inch) wafers having a tungsten layer deposited on a surface thereof were polished on an IC1010 polishing pad at a down-force of 10.34 kPa (1.5 psi), a platen speed of 100 rpm, and a slurry flow rate of 150 ml/min.
- the polishing compositions (the control and compositions 6A through 6I) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1.
- the alkyl chain length (in number of carbon atoms), the concentration of the amine compound (in ppm by weight), the tungsten etch rate, and the tungsten polishing rate are indicated in Table 6.
- the control included glycine.
- Samples 6A through 6I included the following amine compounds (6A (comparative sample not part of the invention)) N,N,N",N"-Tetrabutyl-1,6-hexanediamine, (6B (comparative sample not part of the invention)) cetyltrimethylammonium bromide, (6C (comparative sample not part of the invention)) Di(hydrogenated Tallowalky) quaternary amine, (6D) N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, (6E (comparative sample not part of the invention)) poly[(3-(methacryloylamino)-propyl]trimethylammonium chlor
- compositions 6B and 6D exhibit etch rates significantly less than the control and W polishing rate only marginally less than the control.
- Compositions 6C (high concentration) and 6G exhibit both etch rates and W polishing rates that are significantly less than the control.
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Description
- Chemical mechanical polishing (CMP) compositions and methods for polishing (or planarizing) the surface of a substrate are well known in the art. Polishing compositions (also known as polishing slurries, CMP slurries, and CMP compositions) for polishing metal layers (such as tungsten) on a semiconductor substrate may include abrasive particles suspended in an aqueous solution and chemical accelerators such as oxidizers, chelating agents, catalysts, and the like.
- In a conventional CMP operation, the substrate (wafer) to be polished is mounted on a carrier (polishing head) which is in turn mounted on a carrier assembly and positioned in contact with a polishing pad in a CMP apparatus (polishing tool). The carrier assembly provides a controllable pressure to the substrate, pressing the substrate against the polishing pad. The substrate and pad are moved relative to one another by an external driving force. The relative motion of the substrate and pad abrades and removes a portion of the material from the surface of the substrate, thereby polishing the substrate. The polishing of the substrate by the relative movement of the pad and the substrate may be further aided by the chemical activity of the polishing composition (e.g., by an oxidizing agent and other chemical compounds present in the CMP composition) and/or the mechanical activity of an abrasive suspended in the polishing composition.
US 2013/327977 A1 describes compositions and methods for polishing a molybdenum metal-containing surface. The polishing composition (slurry) described comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof. - In typical tungsten plug and interconnect processes, tungsten is deposited over a dielectric and within openings formed therein. The excess tungsten over the dielectric layer is then removed during a CMP operation to form tungsten plugs and interconnects within the dielectric. As semiconductor device feature sizes continue to shrink, meeting local and global planarity requirements has become more difficult in CMP operations (e.g., in tungsten CMP operations). Array erosion (also referred to as oxide erosion), plug and line recessing, and tungsten etching defects are known to compromise planarity and overall device integrity. For example, excessive array erosion may lead to difficulties in subsequent lithography steps as well as cause electrical contact problems that can degrade electrical performance. Tungsten etching/corrosion and plug and line recessing may also degrade electrical performance or even cause device failure.
- Commercially available tungsten CMP slurries commonly make use of a hydrogen peroxide oxidizer. While there are many advantages to the use of hydrogen peroxide, it is known to cause excessive tungsten etching in certain CMP operations. In such operations it may be advantageous to reduce the rate at which tungsten etches (corrodes) in the CMP composition. Thus, there is a need in the industry for tungsten CMP slurries (or compositions) that are less corrosive towards tungsten (i.e., in which tungsten etches at a lower rate).
- A chemical mechanical polishing composition for polishing a substrate having a tungsten layer is disclosed. The chemical mechanical polishing composition comprises: a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, wherein the amine compound comprises a polyquaternary amine compound and the amine compound comprises an alkyl group having at least 12 carbon atoms, and an iron containing accelerator, wherein the colloidal silica is treated with an aminosilane compound and wherein the polishing composition has a pH of less than 7. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method comprising (a) contacting the substrate with the above described polishing composition, (b) moving the polishing composition relative to the substrate, and (c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
- A chemical mechanical polishing composition for polishing a substrate having a tungsten layer is disclosed. The polishing composition includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and an amine compound in solution in the liquid carrier. The amine compound comprises a polyquaternary amine compound and the amine compound includes an alkyl group having 12 or more carbon atoms. The polishing composition further includes an iron containing accelerator, such as an iron containing catalyst. The polishing composition has a pH of less than 7. The polishing composition may further optionally include a stabilizer bound to the iron containing accelerator, a hydrogen peroxide oxidizer, and/or a pH in a range from 2.0 to 3.5. The colloidal silica is also treated with an aminosilane compound.
- The polishing composition contains an abrasive including colloidal silica particles which are desirably suspended in a liquid carrier (e.g., water). As used herein the term colloidal silica particles refers to silica particles that are prepared via a wet process rather than a pyrogenic or flame hydrolysis process which produces structurally different particles. The colloidal silica particles may be aggregated or non-aggregated. Non-aggregated particles are individually discrete particles that may be spherical or nearly spherical in shape, but can have other shapes as well (such as generally elliptical, square, or rectangular cross-sections). Aggregated particles are particles in which multiple discrete particles are clustered or bonded together to form aggregates having generally irregular shapes.
- Preferably, the colloidal silica is precipitated or condensation-polymerized silica, which may be prepared using any method known to those of ordinary skill in the art, such as by the sol gel method or by silicate ion-exchange. Condensation-polymerized silica particles are often prepared by condensing Si(OH)4 to form substantially spherical particles. The precursor Si(OH)4 may be obtained, for example, by hydrolysis of high purity alkoxysilanes, or by acidification of aqueous silicate solutions. Such abrasive particles may be prepared, for example, in accordance with
U.S. Pat. No. 5,230,833 or may be obtained as any of various commercially available products such as the BINDZII, 50/80, 30/310, and 40/130 products from EKA Chemicals, the Fuso PL-1, PL-2, PL-3, and PL-3H products, and the Nalco 1034A, 1050, 2327, and 2329 products, as well as other similar products available from DuPont, Bayer, Applied Research, Nissan Chemical (the SNOWTEX products), and Clariant. - The particle size of a particle is the diameter of the smallest sphere that encompasses the particle. The abrasive particles may have any suitable particle size. The abrasive particles may have an average particle size of 5 nm or more (e.g., 10 nm or more, 15 nm or more, 20 nm or more, or 30 nm or more). The abrasive particles may have an average particle size of 150 nm or less (e.g., 130 nm or less, 80 nm or less, 50 nm or less, or 30 nm or less). Accordingly, the abrasive particles may have an average particle size in a range from 10 nm to 150 nm (e.g., from 20 nm to 130 nm, from 15 nm to 100 nm, from 20 nm to 80 nm, or from 20 nm to 60 nm).
- The polishing composition may include any suitable amount of colloidal silica particles. The polishing composition typically includes 0.01 wt. % or more colloidal silica (e.g., 0.05 wt. % or more). More typically, the polishing composition may include 0.1 wt. % or more (e.g., 1 wt. % or more, 5 wt. % or more, 7 wt. % or more, 10 wt. % or more, or 12 wt. % or more) colloidal silica particles. The amount of colloidal silica particles in the polishing composition is typically 30 wt. % or less, and more typically 20 wt. % or less (e.g., 15 wt. % or less, 10 wt. % or less, 5 wt. % or less, 3 wt. % or less, or 2 wt. % or less). Preferably, the amount of colloidal silica particles in the polishing composition is in a range from 0.01 wt. % to 20 wt. %, and more preferably from 0.05 wt. % to 15 wt. % (e.g., from 0.1 wt. % to 10 wt. %, from 0.1 wt. % to 4 wt. %, from 0.1 wt. % to 3 wt. %, from 0.1 wt. % to 2 wt. %, or from 0.2 wt. % to 2 wt. %).
- The liquid carrier is used to facilitate the application of the abrasive and any optional chemical additives to the surface of a suitable substrate to be polished (e.g., planarized). The liquid carrier may be any suitable carrier (e.g., a solvent) including lower alcohols (e.g., methanol, ethanol, etc.), ethers (e.g., dioxane, tetrahydrofuran, etc.), water, and mixtures thereof. Preferably, the liquid carrier comprises, consists essentially of, or consists of water, more preferably deionized water.
- The colloidal silica particles have a positive charge of at least 6 mV in the polishing composition. The charge on dispersed particles such as colloidal silica particles is commonly referred to in the art as the zeta potential (or the electrokinetic potential). The zeta potential of a particle refers to the electrical potential difference between the electrical charge of the ions surrounding the particle and the electrical charge of the bulk solution of the polishing composition (e.g., the liquid carrier and any other components dissolved therein). The zeta potential is typically dependent on the pH of the aqueous medium. For a given polishing composition, the isoelectric point of the particles is defined as the pH at which the zeta potential is zero. As the pH is increased or decreased away from the isoelectric point, the surface charge (and hence the zeta potential) is correspondingly decreased or increased (to negative or positive zeta potential values). The zeta potential of a dispersion such as a polishing composition may be obtained using commercially available instrumentation such as the Zetasizer available from Malvern Instruments, the ZetaPlus Zeta Potential Analyzer available from Brookhaven Instruments, and an electro-acoustic spectrometer available from Dispersion Technologies, Inc.
- The colloidal silica particles in the polishing composition have a permanent positive charge of 6 mV or more (e.g., 10 mV or more, 15 mV or more, 20 mV or more, 25 mV or more, or 30 mV or more). Preferably, the colloidal silica particles have a permanent positive charge in a range from 6 mV to 50 mV (e.g., 10 mV to 45 mV, 15 mV to 40 mV, or 20 mV to 40 mV).
- By permanent positive charge it is meant that the positive charge on the silica particles is not readily reversible, for example, via flushing, dilution, filtration, and the like. A permanent positive charge may be the result, for example, of covalently bonding a cationic compound with the colloidal silica. A permanent positive charge is in contrast to a reversible positive charge that may be the result, for example, of an electrostatic interaction between a cationic compound and the colloidal silica.
- Notwithstanding, as used herein, a permanent positive charge of at least 6 mV means that the zeta potential of the colloidal silica particles remains above 6 mV after the following three step ultrafiltration test. A volume of the polishing composition (e.g., 200 ml) is passed through a Millipore Ultracell regenerated cellulose ultrafiltration disk (e.g., having a MW cutoff of 100,000 Daltons and a pore size of 6.3 nm). The remaining dispersion (the dispersion that is retained by the ultrafiltration disk) is collected and replenished to the original volume with pH adjusted deionized water. The deionized water is pH adjusted to the original pH of the polishing composition using a suitable inorganic acid such as nitric acid. This procedure is repeated for a total of three ultrafiltration cycles (each of which includes an ultrafiltration step and a replenishing step). The zeta-potential of the triply ultra-filtered and replenished polishing composition is then measured and compared with the zeta potential of the original polishing composition. This three step ultrafiltration test is further illustrated below by way of example (in Example 5).
- While not wishing to be bound by theory, it is believed that the dispersion retained by the ultrafiltration disk (the retained dispersion) includes the colloidal silica particles and any chemical compounds (e.g., cationic compounds) that may be associated with the surface of the particles (e.g., bonded or attached to or electrostatically interacting with the particle surface). At least a portion of the liquid carrier and the chemical compounds dissolved therein pass through the ultrafiltration disk. Replenishing the retained dispersion to the original volume is believed to upset the equilibrium in the original polishing composition such that the chemical compounds associated with the particle surface may tend towards a new equilibrium. Compounds that are strongly associated (e.g., covalently bonded) with the particle surface remain on the surface such that there tends to be little if any change in the positive zeta potential of the particle. In contrast, a portion of compounds that have a weaker association (e.g., an electrostatic interaction) with the particle surface may return to the solution as the system tends towards the new equilibrium thereby resulting in a reduction in the positive zeta potential. Repeating this process for a total of three ultrafiltration and replenishing cycles is believed to amplify the above described effect.
- It is preferred that after correcting for ionic strength differences there is little (or no) difference between the zeta potential of the colloidal silica particles in the original polishing composition and the particles in the triply ultra-filtered and replenished polishing composition obtained from the above described three step ultrafiltration test. It will be understood that prior to correcting for ionic strength differences, the measured zeta potential may be observed to increase due to the reduced ionic strength (owing to dilution) of the triply ultra-filtered and replenished polishing composition. After correcting for ionic strength differences, it is preferred that any reduction in the positive charge (reduction in the positive zeta potential) on the particles resulting from the aforementioned three step ultrafiltration test is less than 10 mV (e.g., less than 7 mV, less than 5 mV, or even less than 2mV).
- The polishing composition is acidic having a pH of less than 7. Preferably, the polishing composition has a pH of 6 or less (e.g., 5 or less, or 4 or less). More preferably, the polishing composition may have a pH in a range from 1 to 6 (e.g., from 1.5 to 5, or from 2 to 4, or from 2 to 3.5). The pH of the polishing composition may be achieved and/or maintained by any suitable means. The polishing composition may include substantially any suitable pH adjusting agents or buffering systems. For example, suitable pH adjusting agents may include nitric acid, sulfuric acid, phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, maleic acid, ammonium hydroxide, and the like while suitable buffering agents may include phosphates, sulfates, acetates, malonates, oxalates, borates, ammonium salts, and the like.
- Colloidal silica particles having a permanent positive charge in the polishing composition are achieved, for example, via treating the particles with at least one aminosilane compound. Such compounds include primary aminosilanes, secondary aminosilanes, tertiary aminosilanes, quaternary aminosilanes, and multi-podal (e.g., dipodal) aminosilanes. The aminosilane compound can be any suitable aminosilane, such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof.
- Any suitable method of treating the colloidal silica particles, many of which are known to those of ordinary skill in the art may be used. For example, the colloidal silica particles may be treated with the aminosilane compound before mixing with the other components of the polishing composition or the aminosilane and the colloidal silica particles may be added simultaneously to the other components of the polishing composition.
- The aminosilane compound may be present in the polishing composition in any suitable amount. The amount of aminosilane utilized may depend on several factors, for example, including the particle size, the surface area of the particle, the particular aminosilane compound used, and the desired charge on the particle. In general the amount of aminosilane used increases with decreasing particle size (and therefore increasing surface area) and increasing charge on the particle. For example, to achieve a permanent positive charge of 25 mV or more, 20 ppm or more of aminosilane may be used for a dispersion having a particle size of 110 nm, 70 ppm or more of aminosilane may be used for a dispersion having a particle size of 75 nm, and 130 ppm or more of aminosilane may be used for a dispersion having a particle size of 55 nm. Thus the polishing composition may include 5 ppm or more (e.g., 10 ppm or more, 15 ppm or more, or 20 ppm or more) of the aminosilane compound. The polishing composition preferably includes an amount of aminosilane sufficient to provide the desired permanent positive charge without using an excess. Thus the polishing composition may include 500 ppm or less (e.g., 300 ppm or less, or 200 ppm or less, or 150 ppm or less) of the aminosilane compound. Preferably, the polishing composition includes a range from 5 ppm to 500 ppm (e.g., from 10 ppm to 300 ppm, from 15 ppm to 200 ppm, or from 20 ppm to 150 ppm) of the aminosilane compound.
- The polishing composition further includes an iron containing accelerator. An iron containing accelerator as used herein is an iron containing chemical compound that increases the removal rate of tungsten during a tungsten CMP operation. For example, the iron containing accelerator may include an iron containing catalyst such as is disclosed in
U.S. Patents 5,958,288 and5,980,775 . Such an iron containing catalyst may be soluble in the liquid carrier and may include, for example, ferric (iron III) or ferrous (iron II) compounds such as iron nitrate, iron sulfate, iron halides, including fluorides, chlorides, bromides, and iodides, as well as perchlorates, perbromates and periodates, and organic iron compounds such as iron acetates, acetylacetonates, citrates, gluconates, malonates, oxalates, phthalates, and succinates, and mixtures thereof. - An iron containing accelerator may also include an iron containing activator (e.g., a free radical producing compound) or an iron containing catalyst associated with (e.g., coated or bonded to) the surface of the colloidal silica particle such as is disclosed in
U.S. Patents 7,029,508 and7,077,880 . For example, the iron containing accelerator may be bonded with the silanol groups on the surface of the colloidal surface particle. In one embodiment the iron containing accelerator may include a boron containing stabilizer and an iron containing catalyst. In such embodiments the stabilizer and catalyst may occupy substantially any percentage of the available surface sites on the colloidal silica particles, for example, greater than 1%, greater than 50%, or greater than 80% of the available surface sites. - The amount of iron containing accelerator in the polishing composition may be varied depending upon the oxidizing agent used and the chemical form of the accelerator. When the preferred oxidizing agent hydrogen peroxide (or its analogs) is used and a soluble iron containing catalyst is used (such as ferric nitrate), the catalyst may be present in the composition in an amount sufficient to provide a range from 1 to 3000 ppm Fe based on the total weight of the composition. The polishing composition preferably includes 1 ppm Fe or more (e.g., 5 ppm or more, 10 ppm or more, or 20 ppm or more). The polishing composition preferably includes 500 ppm Fe or less (e.g., 200 ppm or less, 100 ppm or less, or 50 ppm or less). The polishing composition may thus include a range from 1 to 500 ppm Fe (e.g., from 3 to 200 ppm, from 5 to 100 ppm, or from 10 to 50 ppm).
- The polishing composition may further include a stabilizer. Without such a stabilizer, the iron containing accelerator and the oxidizing agent may react in a manner that degrades the oxidizing agent rapidly over time. The addition of a stabilizer tends to reduce the effectiveness of the iron containing accelerator such that the choice of the type and amount of stabilizer added to the polishing composition may have a significant impact on CMP performance. The addition of a stabilizer may lead to the formation of a stabilizer/accelerator complex that inhibits the accelerator from reacting with the oxidizing agent while at the same time allowing the accelerator to remain sufficiently active so as to promote rapid tungsten polishing rates.
- Useful stabilizers include phosphoric acid, organic acids, phosphonate compounds, nitriles, and other ligands which bind to the metal and reduce its reactivity toward hydrogen peroxide decomposition and mixture thereof. The acid stabilizers may be used in their conjugate form, e.g., the carboxylate can be used instead of the carboxylic acid. For purposes of this application the term "acid" as it is used to describe useful stabilizers also means the conjugate base of the acid stabilizer. For example the term "adipic acid" means adipic acid and its conjugate base. Stabilizers can be used alone or in combination and significantly decrease the rate at which oxidizing agents such as hydrogen peroxide decomposes.
- Preferred stabilizers include phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid (EDTA), propylenediaminetetraacetic acid (PDTA), and mixtures thereof. The preferred stabilizers may be added to the compositions and slurries of this invention in an amount ranging from 1 equivalent per iron containing accelerator to 3.0 weight percent or more. As used herein, the term "equivalent per iron containing accelerator" means one molecule of stabilizer per iron ion in the composition. For example 2 equivalents per iron containing accelerator means two molecules of stabilizer for each catalyst ion.
- The polishing composition may further include an oxidizing agent. The oxidizing agent may be added to the polishing composition during the slurry manufacturing process or just prior to the CMP operation (e.g., in a tank located at the semiconductor fabrication facility). Preferable oxidizing agents include inorganic or organic per-compounds. A per-compound as defined by Hawley's Condensed Chemical Dictionary is a compound containing at least one peroxy group (-O--O-) or a compound containing an element in its highest oxidation state. Examples of compounds containing at least one peroxy group include but are not limited to hydrogen peroxide and its adducts such as urea hydrogen peroxide and percarbonates, organic peroxides such as benzoyl peroxide, peracetic acid, and di-t-butyl peroxide, monopersulfates (SO5 =), dipersulfates (S2O8 =), and sodium peroxide. Examples of compounds containing an element in its highest oxidation state include but are not limited to periodic acid, periodate salts, perbromic acid, perbromate salts, perchloric acid, perchlorate salts, perboric acid, and perborate salts and permanganates. The most preferred oxidizing agents is hydrogen peroxide.
- The oxidizing agent may be present in the polishing composition in an amount ranging, for example, from 0.1 to 10 weight percent. In preferred embodiments in which a hydrogen peroxide oxidizer and a soluble iron containing accelerator are used, the oxidizer may be present in the polishing composition in an amount ranging from 0.1 to 6 weight percent (e.g., from 0.2 to 5 weight percent, from 0.5 to 4 weight percent, or from 1 to 3 weight percent).
- The polishing composition further includes an amine compound in solution in the liquid carrier. The amine compound may inhibit tungsten etching (i.e., reduces tungsten etch rates) in the presence of an oxidizer such as hydrogen peroxide. The addition of an amine compound may also have a negative impact on CMP performance. Thus the amine compound may be selected such that it advantageously inhibits tungsten etching while at the same time allowing for high tungsten removal rates during the CMP operation. The amine compound (or compounds) comprises a polyquaternary amine compound and the amine compound comprises an alkyl group having 12 or more carbon atoms. The amine compound includes a long chain alkyl group having at least 12 carbon atoms (e.g. at least 14 carbon atoms). The amine compound include a polycationic amine. A polycationic amine (as the term is used herein) is an amine compound having multiple (two or more) amine groups in which each of the amine groups is cationic (i.e., has a positive charge). Thus the polycationic amine is a polyquaternary amine. By polyquaternary amine it is meant that the amine compound includes from 2 to 4 quaternary ammonium groups such that the polyquaternary amine is a diquaternary amine, a triquaternary amine, or a tetraquaternary amine compound. Diquaternary amine compounds may include, for example, N,N'-methylenebis(dimethyltetradecylammonium bromide), N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, N,N'-hexamethylenebis(tributylammonium hydroxide), didodecyl-tetramethyl-1,4-butanediaminium diiodide, and the like. Triquaternary amine compounds may include, for example, N(1),N(6)-didoecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide. The polyquaternary amine compound includes a long chain alkyl grouphaving 12 or more carbon atoms. For example, a polyquaternary amine compound having a long chain alkyl group may include N,N'-methylenebis (dimethyltetradecylammonium bromide), N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide.
- A polycationic amine may also be polycationic in that each of the amine groups is protonated (and therefore has a positive charge). For example, a dicationic amine such as tetramethyl-p-phenylenediamine includes two tertiary amine groups that may be protonated (and therefore positively charged) at polishing composition pH values less than the pKa of the amine compound.
- In certain embodiments not covered by the claimed invention the amine compound may include an amine based polymer. Such a polymer includes four or more amine groups. The amine based polymer may include, for example, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, and polymers including the following amine containing functional groups methacryloylox-ethyl trimethyl ammonium methyl sulfate, diallyl dimethyl ammonium chloride, and methacrylamido-propyl trimethyl ammonium chloride.
- It will be understood that the amine compound does not include a heterocyclic polyamine. Heterocyclic polyamines are amine compounds having multiple amine groups in which at least one of the amine groups is located in a ring (e.g., a ring including 3, 4, 5, 6, 7, or 8 members). Such heterocyclic amine compounds include, for example, certain pyridine, pyridylamine, pyrimidine, and azole compounds. While such heterocyclic polyamines (such as benzotriazole) are known inhibitors of copper etching, their utility in inhibiting tungsten etching tends to be limited. As such they are not particularly useful in the disclosed tungsten CMP compositions.
- The polishing composition may include substantially any suitable concentration of the amine compound. In general the concentration is desirably high enough to provide adequate etch inhibition, but low enough so that the compound is soluble and so as not to reduce tungsten polishing rates below acceptable levels. By soluble it is meant that the compound is fully dissolved in the liquid carrier or that it forms micelles in the liquid carrier or is carried in micelles. It may be necessary to vary the concentration of the amine compound depending upon numerous various factors, for example, including the solubility of the amine compound, the number of amine groups in the amine compound, the length of an alkyl group in the amine compound, the relationship between etch rate inhibition and polishing rate inhibition, the oxidizing agent used, the concentration of the oxidizing agent, and so on. In certain desirable embodiments, the concentration of the amine compound in the polishing composition is in a range from 0.1 µM to 10 mM (i.e., from 10-7 to 10-2 molar).
- The polishing composition may optionally further include a biocide. The biocide may include any suitable biocide, for example an isothiazolinone biocide. The amount of biocide in the polishing composition typically is in a range from 1 ppm to 50 ppm, and preferably from 1 ppm to 20 ppm.
- The polishing composition may be prepared using any suitable techniques, many of which are known to those skilled in the art. The polishing composition may be prepared in a batch or continuous process. Generally, the polishing composition may be prepared by combining the components thereof in any order. The term "component" as used herein includes the individual ingredients (e.g., the colloidal silica, the iron containing accelerator, the amine compound, etc.)
- For example, the silica may be dispersed in the aqueous liquid carrier. The silica may then be treated, with the aminosilane so as to produce generate a colloidal silica having a permanent positive charge of at least 6 mV. Other components such as an iron containing accelerator, a stabilizer, and the amine compound may then be added and mixed by any method that is capable of incorporating the components into the polishing composition. The oxidizing agent may be added at any time during the preparation of the polishing composition. For example, the polishing composition may be prepared prior to use, with one or more components, such as the oxidizing agent, being added just prior to the CMP operation (e.g., within 1 minute, or within 10 minutes, or within 1 hour, or within 1 day, or within 1 week of the CMP operation). The polishing composition also may also be prepared by mixing the components at the surface of the substrate (e.g., on the polishing pad) during the CMP operation.
- The polishing composition may be supplied as a one-package system comprising a colloidal silica having a permanent positive charge of at least 6 mV, an amine compound, an iron containing accelerator and optional stabilizer, an optional biocide, and water. The oxidizing agent desirably is supplied separately from the other components of the polishing composition and is combined, e.g., by the end-user, with the other components of the polishing composition shortly before use (e.g., 1 week or less prior to use, 1 day or less prior to use, 1 hour or less prior to use, 10 minutes or less prior to use, or 1 minute or less prior to use). Various other two-container, or three- or more-container, combinations of the components of the polishing composition are within the knowledge of one of ordinary skill in the art.
- The polishing composition of the invention may also be provided as a concentrate which is intended to be diluted with an appropriate amount of water prior to use. In such an embodiment, the polishing composition concentrate may include the colloidal silica having a permanent positive charge of at least 6 mV, the amine compound, the iron containing accelerator and optional stabilizer, the optional biocide, and water, with or without the oxidizing agent, in amounts such that, upon dilution of the concentrate with an appropriate amount of water, and the oxidizing agent if not already present in an appropriate amount, each component of the polishing composition will be present in the polishing composition in an amount within the appropriate range recited above for each component. For example, the colloidal silica having a permanent positive charge of at least 6 mV, the amine compound, the optional iron containing accelerator and the stabilizer, may each be present in the polishing composition in an amount that is 2 times (e.g., 3 times, 4 times, 5 times, or even 10 times) greater than the concentration recited above for each component so that, when the concentrate is diluted with an equal volume of (e.g., 2 equal volumes of water, 3 equal volumes of water, 4 equal volumes of water, or even 9 equal volumes of water respectively), along with the oxidizing agent in a suitable amount, each component will be present in the polishing composition in an amount within the ranges set forth above for each component. Furthermore, as will be understood by those of ordinary skill in the art, the concentrate may contain an appropriate fraction of the water present in the final polishing composition in order to ensure that other components are at least partially or fully dissolved in the concentrate.
- Although the polishing composition of the invention may be used to polish any substrate, the polishing composition is particularly useful in the polishing of a substrate comprising at least one metal including tungsten and at least one dielectric material. The tungsten layer may be deposited over one or more barrier layers, for example, including titanium and/or titanium nitride (TiN). The dielectric layer may be a metal oxide such as a silicon oxide layer derived from tetraethylorthosilicate (TEOS), porous metal oxide, porous or non-porous carbon doped silicon oxide, fluorine-doped silicon oxide, glass, organic polymer, fluorinated organic polymer, or any other suitable high or low-k insulating layer.
- The polishing method of the invention is particularly suited for use in conjunction with a chemical mechanical polishing (CMP) apparatus. Typically, the apparatus includes a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad. The polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and the polishing composition of the invention and then the polishing pad moving relative to the substrate, so as to abrade at least a portion of the substrate (such as tungsten, titanium, titanium nitride, and/or a dielectric material as described herein) to polish the substrate.
- A substrate can be planarized or polished with the chemical mechanical polishing composition with any suitable polishing pad (e.g., polishing surface). Suitable polishing pads include, for example, woven and non-woven polishing pads. Moreover, suitable polishing pads can comprise any suitable polymer of varying density, hardness, thickness, compressibility, ability to rebound upon compression, and compression modulus. Suitable polymers include, for example, polyvinylchloride, polyvinylfluoride, nylon, fluorocarbon, polycarbonate, polyester, polyacrylate, polyether, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, coformed products thereof, and mixtures thereof.
- The following examples further illustrate the invention but, of course, should not be construed as in any way limiting its scope.
- A number of polishing compositions were prepared in order to evaluate various performance metrics of the compositions. A standard composition was used as a base composition for all formulations with only the amount and type of amine compound varied. The standard composition was prepared as follows:
A dispersion was prepared including 3.0 weight percent colloidal silica and 0.01 weight percent (100 ppm) of bis-(gamma-trimethoxysilylpropyl)amine (an aminosilane). The dispersion was prepared by mixing a concentrated colloidal silica dispersion having a mean particle size of 75 nm (such as are commercially available from Akso Nobel, Fuso, and Nalco as listed above) with the aminosilane and water. The dispersion was mixed for a number of hours to adequately treat the colloidal silica with the aminosilane. The treated colloidal silica dispersion was then added to a mixture including malonic acid, ferric nitrate, and water such that the final concentrations in the composition were as follows: 2.0 weight percent treated colloidal silica, 0.0031 weight percent ferric nitrate, and 0.067 weight percent malonic acid. The pH of the mixture was then adjusted to 2.4 using nitric acid. This mixture was used as a stock solution in which various amine compounds were dissolved prior to performing zeta potential measurements, static etch tests, and CMP tests as described in more detail in the subsequent examples. - The tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for various polishing compositions. This example demonstrates the effect of various amine compounds as a function of the longest alkyl chain length in the amine compound. To obtain the tungsten etch rate for each polishing composition, the composition was first heated to 45 degrees C after which hydrogen peroxide was added to a concentration of 2 percent. After waiting 5 minutes for the temperature to return to 45 degrees, a two-inch wafer having a tungsten layer was submersed in the polishing compositions for 5 minutes. Tungsten removal rates were determined via resistivity measurements made before and after immersion in the polishing compositions. The zeta potential measurements were obtained using a DT1200 electro-acoustic spectrometer available from Dispersion Technologies, Inc. The polishing compositions (Controls A and B and comparative compositions 2A through 2M) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1. The alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica particles are indicated in Table 1. Control A included no inhibitor and control B included glycine. Comparative samples 2A through 2M included the following amine compounds: (2A) octadecylmethyl[polyoxyethylene (15)] ammonium chloride, (2B) cocoalkylmethyl[polyoxyethylene (15)] ammonium chloride, (2C) benzalkonium chloride, (2D) hexadecylamine, (2E) benzyldimethylhexadecylammonium chloride, (2F) tetradecylamine, (2G) dodecylamine, (2H) decylamine, (2I) octylamine, (2J) cocamidopropylamine oxide, (2K) benzyltributylammonium chloride, and (2L) tetrabutylammonium hydroxde.
Table 1 Polishing Composition Alkyl Chain Length (#C) Concentration (mmol) W Etch Rate (Ang/min) Zeta Potential (mV) Control A 132 Control B 2 2.4 78 26 2A 18 2.4 11 27 1.2 9 2B 16 2.4 4 27 2C 16 2.4 9 34 1.2 6 2D 16 2.4 4 26 1.2 1 2E 14 2.4 4 33 1.2 4 2F 14 2.4 2 28 1.2 11 2G 12 2.4 5 26 1.2 113 2H 10 2.4 140 26 1.2 134 2I 8 2.4 115 25 1.2 142 2J 4 2.4 2 32 1.2 3 2K 4 2.4 132 30 1.2 160 2L 4 2.4 143 30 1.2 124 - As is apparent from the results set forth in Table 1, compositions 2A-2G, which included amine compounds having an alkyl chain length greater than 10 (12, 14, 16, and 18) exhibited W etch rates of one-tenth or less that of control A (no inhibitor) and one-seventh or less that of control B (glycine).
- The tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for various other polishing compositions. This example demonstrates the effect of various amine containing polymers (3A-3E). The tungsten etch rates and zeta potential measurements were obtained using the same methodologies as described in Example 2. The polishing compositions (controls A and B and comparative compositions 3A through 3E) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1. The alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica are indicated in Table 2. Control A included no inhibitor and control B included glycine. Comparative samples 3A through 3E included the following amine compounds: (3A) Merquat 280 which is a polymer having alternating diallyl dimethyl ammonium chloride and acrylic acid groups and having a molecular weight of 450,000, (3B) Merquat 106 which is a polymer having repeating dimethyl ammonium chloride groups and a molecular weight of 15,000, (3C) pentaethylenehexamine, (3D) tetraethylenepentamine, and (3E) pentamethyldiethylenetriamine.
Table 2 Polishing Composition Alkyl Chain Length (#C) Concentration (mmol) W Etch Rate (Ang/min) Zeta Potential (mV) Control A 132 Control B 2 2.4 78 26 3A 4 0.0012 20 NA 0.00062 28 3B 4 0.0012 54 NA 0.00062 48 3C 4 2.4 51 23 1.2 44 3D 2 2.4 54 22 1.2 38 3E 2 2.4 132 24 1.2 125 - As is apparent from the results set forth in Table 2, compositions 3A, 3B, 3C, and 3D exhibited W etch rates significantly less than that of the controls. The etch rate of composition 3E was similar to that of control A (no inhibitor).
- The tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for still other polishing compositions. This example demonstrates the effect of various polycationic amine containing compounds (4A-4K). The tungsten etch rates and zeta potential measurements were obtained using the same methodologies as described in Example 2. The polishing compositions (controls A and B and compositions 4A through 4K) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1. The alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica are indicated in Table 3. Control A included no inhibitor and control B included glycine. Samples 4A through 4K included the following amine compounds: (4A) N,N'-methylenebis (dimethyltetradecylammonium bromide), (4B (comparative sample not part of the invention)) 1,1,4,4-tetrabutylpiperazinedium dibromide, (4C) N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, (4D (comparative sample not part of the invention)) 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, (4E) N(1),N(6)-didoecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, (4F (comparative sample not part of the invention)) decamethonium bromide, (4G(comparative sample not part of the invention)) methanetetrayltetrakis(tetramethylammonium bromide), (4H(comparative sample not part of the invention)) hexamethonium chloride, (4I (comparative sample not part of the invention)) tetramethyl-p-phenylenediamine, (4J) didodecyl-tetramethyl-1,4-butanediaminium diiodide, and (4K(comparative sample not part of the invention)) N(1), N(1), N(3)-tributyl-N(3)-{3-[dibutyl(methyl)ammonio]propyl-N(1), N(3)-dimethyl-1,3-propanediaminium triiodide.
Table 3 Polishing Composition Alkyl Chain Length (#C) Concentration (mmol) W Etch Rate (Ang/min) Zeta Potential (mV) Control A 132 Control B 2 2.4 78 26 4A 10 0.6 4 28 0.3 14 4B 4 0.6 78 27 0.3 48 4C 18 0.2 11 25 0.1 57 4D 3 0.6 19 27 0.3 6 4E 12 0.6 -2 27 0.3 121 4F 3 0.6 116 29 0.3 113 4G 5 0.6 110 29 0.3 121 4H 6 2.4 185 30 1.2 176 4I 1 2.4 102 25 1.2 117 4J 12 0.6 0 29 0.3 0 4K 4 0.6 19 29 0.3 121 - As is apparent from the results set forth in Table 3, compositions 4A, 4C, 4D, 4E, 4J, and 4K may exhibit W etch rates significant less than that of the controls (depending on the concentration of the inhibitor).
- The tungsten etch rate and zeta potential of the colloidal silica were evaluated in this example for various other polishing compositions. This example demonstrates the effect of various heterocyclic polyamine compounds. The tungsten etch rates and zeta potential measurements were obtained using the same methodologies as described in Example 2. The polishing compositions (controls A and B and compositions 5A through 5F) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1. The alkyl chain length (in number of carbon atoms), the concentration of the amine compound, the tungsten etch rate, and the zeta potential of the colloidal silica are indicated in Table 4. Control A included no inhibitor and control B included glycine. Samples 5A through 5F included the following amine compounds: (5A) 2-(aminomethy)pyridine, (5B) 2,2'dipyridylamine, (5C) benzotriazole, (5D) 2-aminopyrimidie, (5E) 4-aminopyridine, and (5F) 5-aminotetrazole.
Table 4 Polishing Composition Alkyl Chain Length (#C) Concentration (mmol) W Etch Rate (Ang/min) Zeta Potential (mV) Control A 132 Control B 2 2.4 78 26 5A 1 2.4 121 23 1.2 128 5B 0 2.4 99 24 1.2 125 5C 0 2.4 174 28 1.2 223 5D 0 2.4 190 28 1.2 115 5E 0 2.4 193 25 1.2 203 5F 0 2.4 177 28 1.2 202 - As is apparent from the results set forth in Table 4, none of compositions 5A through 5F exhibited a W etch rate of less than that of the glycine control. All but composition 5B exhibited W etch rates about equal to or greater than the control including no inhibitor.
- Zeta potential measurements and conductivity measurements were obtained for treated silica samples before and after filtration. A 200 ml volume of each composition was filtered through a Millipore Ultracell regenerated cellulose ultrafiltration disk (having a MW cutoff of 100,000 Daltons and a pore size of 6.3 nm). The remaining dispersion (the dispersion that was retained by the ultrafiltration disk) was collected and replenished to the original 200 ml volume using deionized water adjusted to pH 2.6 with nitric acid. This procedure was repeated for a total of three ultrafiltration cycles (each of which includes an ultrafiltration step and a replenishing step). The zeta-potential and electrical conductivity of the polishing composition were measured before and after the ultrafiltration procedure (i.e., on the original polishing composition and the triply ultra-filtered and replenished polishing composition). Table 5 shows the measured zeta potential and conductivity for polishing compositions 6A and 6B. Polishing composition 6A contained a 55 nm colloidal silica treated with 3-(aminopropyl)trimethoxylsilane while polishing composition 6B contained a 55 nm colloidal silica treated with tetrabutylammonium hydroxide. As described above, the zeta potential and electrical conductivity of the original compositions were measured before and after above described ultrafiltration procedure. Corrected zeta-potential values of the triply ultra-filtered and replenished polishing composition (corrected for ionic strength differences as indicated by the conductivity change) are also shown.
Table 5 Polishing Composition Zeta Potential Before (mV) Conductivity Before (µs/cm) Zeta Potential After (mV) Conductivity After (µs/cm) Zeta Potential Corrected (mV) 6A 41 2130 56 1156 41 6B 10 1030 3 1083 3 - As is apparent from the results set forth in Table 5, the zeta potential of sample 6A is not changed by filtration indicating that the colloidal silica has a permanent positive charge of 41 mV. The zeta potential of sample 6B decreased from 10 to 3 mV indicating that the positive charge colloidal silica was not permanent.
- Both the tungsten etch rate and the tungsten polishing rate were evaluated in this example for various polishing compositions. This example demonstrates the effect of various amine compounds on the tungsten etch rates and tungsten polishing rates for the corresponding polishing compositions. The CMP compositions were obtained using the procedure described in Example 1. The compositions were similar to those described above with the exception that they included the following final concentrations: 1.5 weight percent treated colloidal silica, 0.0012 weight percent ferric nitrate, 0.0267 weight percent malonic acid, and 0.5 percent hydrogen peroxide.
- The tungsten etch rates were obtained using the same methodology described in Example 2. The tungsten polishing rates were obtained using a Mirra® CMP Tool (available from Applied Materials). 20.32 cm (8 inch) wafers having a tungsten layer deposited on a surface thereof were polished on an IC1010 polishing pad at a down-force of 10.34 kPa (1.5 psi), a platen speed of 100 rpm, and a slurry flow rate of 150 ml/min. The polishing compositions (the control and compositions 6A through 6I) were obtained by adding an appropriate amount of the indicated amine compound to a sample of the stock solution described above in Example 1. The alkyl chain length (in number of carbon atoms), the concentration of the amine compound (in ppm by weight), the tungsten etch rate, and the tungsten polishing rate are indicated in Table 6. The control included glycine. Samples 6A through 6I included the following amine compounds (6A (comparative sample not part of the invention)) N,N,N",N"-Tetrabutyl-1,6-hexanediamine, (6B (comparative sample not part of the invention)) cetyltrimethylammonium bromide, (6C (comparative sample not part of the invention)) Di(hydrogenated Tallowalky) quaternary amine, (6D) N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, (6E (comparative sample not part of the invention)) poly[(3-(methacryloylamino)-propyl]trimethylammonium chloride, acrylamine and acrylic acid, (6F(comparative sample not part of the invention)) an ampholytic terpolymer of methacryl-midopropyl trimethyl ammonium chloride, acrylamide and acrylic acid, (6G (comparative sample not part of the invention)) polyethyleimine, (6H (comparative sample not part of the invention)) Pentamethyldiethylenetriamine, and (6I (comparative sample not part of the invention)) 1-[Bis[3-(dimethylamino)proyl]amino]-propanol.
Table 6 Polishing Composition Alkyl Chain Length (#C) Concentration (ppm) W Etch Rate (Ang/min) W Polish Rate (Ang/min) Control 2 1600 66 215 6A 6 1000 63 202 6B 16 100 3 141 50 2 171 6C 18 100 72 79 300 2 73 6D 18 100 14 138 6E 3 100 110 212 6F 6 100 120 202 6G 2 20 5 42 6H 2 300 132 214 6I 3 300 183 - As is apparent from the results set forth in Table 6, compositions 6B and 6D exhibit etch rates significantly less than the control and W polishing rate only marginally less than the control. Compositions 6C (high concentration) and 6G exhibit both etch rates and W polishing rates that are significantly less than the control.
Claims (12)
- A chemical mechanical polishing composition comprising:a water based liquid carrier;a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV;an amine compound in solution in the liquid carrier, wherein the amine compound comprises a poly quaternary amine compound and the amine compound comprises an alkyl group having 12 or more carbon atoms; andan iron containing accelerator,wherein the colloidal silica is treated with an aminosilane compound and wherein the polishing composition has a pH of less than 7.
- The composition of claim 1, wherein the colloidal silica has a permanent positive charge of at least 15 mV.
- The composition of claim 1,
wherein the aminosilane compound is selected from the group consisting of such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof. - The composition of claim 1, wherein the iron containing accelerator comprises a soluble iron containing catalyst, wherein optionally
the composition further comprising a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof. - The composition of claim 1, wherein any one or more of the following applies,a) the composition further comprising a hydrogen peroxide oxidizer; andb) the composition having a pH in a range from 2.0 to 3.5.
- The composition of claim 1, wherein the amine compound is selected from the group consisting of N,N'-methylenebis (dimethyltetradecylammonium bromide), N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.
- The composition of claim 1, wherein the amine compound is a polyquaternary amine compound,
- The composition of claim 7, wherein the poly quaternary amine is a diquaternary amine compound.
- The composition of claim 1, wherein the poly quaternary amine compound comprises a diquaternary amine, a triquaternary amine, or a tetraquaternary amine.
- A method of chemical mechanical polishing a substrate including a tungsten layer, the method comprising:(a) contacting the substrate with a polishing composition comprising:(i) a water based liquid carrier;(ii) a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV;(iii) an amine compound in solution in the liquid carrier, wherein the amine compound comprises a polyquaternary amine compound and the amine compound comprises an alkyl group having 12 or more carbon atoms; and(iv) an iron containing accelerator,wherein the colloidal silica is treated with an aminosilane compound and wherein the polishing composition has a pH of less than 7(b) moving the polishing composition relative to the substrate; and(c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
- The method of claim 10, wherein any one or more of the following applies,a) the colloidal silica has a permanent positive charge of at least 15 mV;b) the colloidal silica is treated with an aminosilane compound selected from the group consisting of such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof;c) the iron containing accelerator comprises a soluble iron containing catalyst and the polishing composition further comprises a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof;
andd) the amine compound is selected from the group consisting N,N'-methylenebis (dimethyltetradecylammonium bromide), N,N,N',N',N'-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof. - The method of claim 10, wherein the amine compound is a diquaternary amine compound.
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Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9127187B1 (en) * | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
US10573524B2 (en) * | 2016-03-04 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a semiconductor substrate |
US10640682B2 (en) | 2016-09-29 | 2020-05-05 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
JP6936316B2 (en) | 2016-09-29 | 2021-09-15 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | Chemical mechanical polishing method for tungsten |
WO2018058396A1 (en) | 2016-09-29 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
US9803108B1 (en) * | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
US9984895B1 (en) | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
KR102422952B1 (en) * | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | Slurry composition for polishing a metal layer and method for fabricating semiconductor device using the same |
US10119048B1 (en) * | 2017-07-31 | 2018-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low-abrasive CMP slurry compositions with tunable selectivity |
CN111094481A (en) * | 2017-09-15 | 2020-05-01 | 嘉柏微电子材料股份公司 | Composition for tungsten chemical mechanical polishing |
CN110317588A (en) * | 2018-03-29 | 2019-10-11 | 中国石油化工股份有限公司 | A kind of cationic surfactant and preparation method thereof and foaming agent and its application |
US10815392B2 (en) | 2018-05-03 | 2020-10-27 | Rohm and Haas Electronic CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
US10995238B2 (en) * | 2018-07-03 | 2021-05-04 | Rohm And Haas Electronic Materials Cmp Holdings | Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten |
US10640681B1 (en) | 2018-10-20 | 2020-05-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
US10597558B1 (en) | 2018-10-20 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
US20200172759A1 (en) * | 2018-12-04 | 2020-06-04 | Cabot Microelectronics Corporation | Composition and method for cobalt cmp |
US10968366B2 (en) * | 2018-12-04 | 2021-04-06 | Cmc Materials, Inc. | Composition and method for metal CMP |
CN111378375B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution |
US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
JP7375483B2 (en) * | 2019-11-15 | 2023-11-08 | Jsr株式会社 | Chemical mechanical polishing composition and chemical mechanical polishing method |
TWI755060B (en) | 2019-11-15 | 2022-02-11 | 日商Jsr股份有限公司 | Chemical mechanical polishing composition and chemical mechanical polishing method |
KR20220123295A (en) * | 2020-01-07 | 2022-09-06 | 씨엠씨 머티리얼즈, 인코포레이티드 | Derivatized polyamino acids |
KR20210095465A (en) | 2020-01-23 | 2021-08-02 | 삼성에스디아이 주식회사 | Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same |
TW202138504A (en) * | 2020-03-30 | 2021-10-16 | 日商福吉米股份有限公司 | Polishing composition |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JP3810588B2 (en) | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | Polishing composition |
IL147039A0 (en) | 1999-07-07 | 2002-08-14 | Cabot Microelectronics Corp | Cmp composition containing silane modified abrasive particles |
US6334880B1 (en) | 1999-12-07 | 2002-01-01 | Silbond Corporation | Abrasive media and aqueous slurries for chemical mechanical polishing and planarization |
US6375548B1 (en) * | 1999-12-30 | 2002-04-23 | Micron Technology, Inc. | Chemical-mechanical polishing methods |
US6646348B1 (en) | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
DE10065027A1 (en) | 2000-12-23 | 2002-07-04 | Degussa | Aqueous dispersion, process for its preparation and use |
US6656241B1 (en) | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
TW591089B (en) | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
DE10164262A1 (en) | 2001-12-27 | 2003-07-17 | Bayer Ag | Composition for the chemical mechanical polishing of metal and metal / dielectric structures |
US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
JP2004247542A (en) * | 2003-02-14 | 2004-09-02 | Kao Corp | Method for manufacturing substrate for precision component |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
JPWO2004100242A1 (en) | 2003-05-09 | 2006-07-13 | 三洋化成工業株式会社 | Polishing liquid and polishing method for CMP process |
US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7427361B2 (en) * | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
US7022255B2 (en) | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
DE102004016600A1 (en) * | 2004-04-03 | 2005-10-27 | Degussa Ag | Dispersion for chemical mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer |
US7247567B2 (en) | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
US20060124592A1 (en) | 2004-12-09 | 2006-06-15 | Miller Anne E | Chemical mechanical polish slurry |
WO2006086265A2 (en) * | 2005-02-07 | 2006-08-17 | Applied Materials, Inc. | Method and composition for polishing a substrate |
DE602006004624D1 (en) * | 2005-02-23 | 2009-02-26 | Jsr Corp | Chemical-mechanical polishing process |
EP1899111A2 (en) | 2005-06-06 | 2008-03-19 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
US20070075042A1 (en) | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
KR20070088245A (en) | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | Polishing liquid for metals |
JP2007273910A (en) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | Polishing composition liquid |
US8163049B2 (en) | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
US7585340B2 (en) | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
WO2007146680A1 (en) | 2006-06-06 | 2007-12-21 | Florida State University Research Foundation , Inc. | Stabilized silica colloid |
US7294576B1 (en) * | 2006-06-29 | 2007-11-13 | Cabot Microelectronics Corporation | Tunable selectivity slurries in CMP applications |
JP4836731B2 (en) | 2006-07-18 | 2011-12-14 | 旭硝子株式会社 | Manufacturing method of glass substrate for magnetic disk |
US8057561B2 (en) * | 2006-09-11 | 2011-11-15 | Cabot Microelectronics Corporation | Polyoxometalate compositions and methods |
US20080149591A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing |
US7691287B2 (en) | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
JP5322455B2 (en) | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | Polishing liquid and polishing method |
KR101484795B1 (en) | 2007-03-27 | 2015-01-20 | 후소카가쿠코교 가부시키가이샤 | Colloidal silica, and method for production thereof |
JP2008288398A (en) * | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | Semiconductor wafer polishing composition, manufacturing method thereof, and polish treatment method |
US7915071B2 (en) | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
SG184772A1 (en) | 2007-09-21 | 2012-10-30 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
US7994057B2 (en) | 2007-09-21 | 2011-08-09 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
TW200941582A (en) * | 2007-10-29 | 2009-10-01 | Ekc Technology Inc | Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions |
JP5441345B2 (en) * | 2008-03-27 | 2014-03-12 | 富士フイルム株式会社 | Polishing liquid and polishing method |
EP2364241A4 (en) | 2008-04-18 | 2013-12-11 | Saint Gobain Abrasives Inc | Hydrophilic and hydrophobic silane surface modification of abrasive grains |
KR101247890B1 (en) | 2008-09-19 | 2013-03-26 | 캐보트 마이크로일렉트로닉스 코포레이션 | Barrier slurry for low-k dielectrics |
US8529787B2 (en) | 2008-09-26 | 2013-09-10 | Fuso Chemical Co., Ltd. | Colloidal silica containing silica secondary particles having bent structure and/or branched structure, and method for producing same |
CN102165564B (en) | 2008-09-26 | 2014-10-01 | 罗地亚管理公司 | Abrasive compositions for chemical mechanical polishing and methods for using same |
EP2389417B1 (en) * | 2009-01-20 | 2017-03-15 | Cabot Corporation | Compositons comprising silane modified metal oxides |
US8119529B2 (en) | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
KR20130029441A (en) | 2009-08-19 | 2013-03-22 | 히타치가세이가부시끼가이샤 | Polishing solution for cmp and polishing method |
CN102093816B (en) * | 2009-12-11 | 2017-02-22 | 安集微电子(上海)有限公司 | Chemical mechanical polishing liquid |
JP2011216582A (en) * | 2010-03-31 | 2011-10-27 | Fujifilm Corp | Polishing method and polishing liquid |
JP5141792B2 (en) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | CMP polishing liquid and polishing method |
KR101243331B1 (en) * | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same |
US8366059B2 (en) | 2011-01-06 | 2013-02-05 | GM Global Technology Operations LLC | Position controlled cable guide clip |
US8980122B2 (en) * | 2011-07-08 | 2015-03-17 | General Engineering & Research, L.L.C. | Contact release capsule useful for chemical mechanical planarization slurry |
KR101349758B1 (en) * | 2011-12-26 | 2014-01-10 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same |
CN108977173A (en) * | 2012-06-11 | 2018-12-11 | 嘉柏微电子材料股份公司 | For polishing the composition and method of molybdenum |
JP6222907B2 (en) * | 2012-09-06 | 2017-11-01 | 株式会社フジミインコーポレーテッド | Polishing composition |
US20140273458A1 (en) * | 2013-03-12 | 2014-09-18 | Air Products And Chemicals, Inc. | Chemical Mechanical Planarization for Tungsten-Containing Substrates |
US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303188B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
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