JP2010534934A5 - - Google Patents
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- Publication number
- JP2010534934A5 JP2010534934A5 JP2010518218A JP2010518218A JP2010534934A5 JP 2010534934 A5 JP2010534934 A5 JP 2010534934A5 JP 2010518218 A JP2010518218 A JP 2010518218A JP 2010518218 A JP2010518218 A JP 2010518218A JP 2010534934 A5 JP2010534934 A5 JP 2010534934A5
- Authority
- JP
- Japan
- Prior art keywords
- cmp
- oxidizing agent
- substrate
- polishing
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 11
- 239000007800 oxidant agent Substances 0.000 claims 10
- 238000005498 polishing Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 239000012782 phase change material Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 3
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims 2
- 239000004472 Lysine Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910000618 GeSbTe Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000008365 aqueous carrier Substances 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96210507P | 2007-07-26 | 2007-07-26 | |
| US60/962,105 | 2007-07-26 | ||
| PCT/US2008/008978 WO2009017652A2 (en) | 2007-07-26 | 2008-07-24 | Compositions and methods for chemical-mechanical polishing of phase change materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010534934A JP2010534934A (ja) | 2010-11-11 |
| JP2010534934A5 true JP2010534934A5 (enExample) | 2011-09-08 |
| JP5529736B2 JP5529736B2 (ja) | 2014-06-25 |
Family
ID=40305111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010518218A Expired - Fee Related JP5529736B2 (ja) | 2007-07-26 | 2008-07-24 | 相変化材料を化学的機械的に研磨するための組成物及び方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20100190339A1 (enExample) |
| EP (1) | EP2183333B1 (enExample) |
| JP (1) | JP5529736B2 (enExample) |
| KR (1) | KR101325455B1 (enExample) |
| CN (1) | CN101765647B (enExample) |
| IL (1) | IL203300A (enExample) |
| MY (1) | MY155239A (enExample) |
| SG (1) | SG183081A1 (enExample) |
| TW (1) | TWI385243B (enExample) |
| WO (1) | WO2009017652A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101765647B (zh) * | 2007-07-26 | 2016-05-04 | 卡伯特微电子公司 | 用于相变材料的化学-机械抛光的组合物及方法 |
| US8735293B2 (en) * | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| CN102690604A (zh) * | 2011-03-24 | 2012-09-26 | 中国科学院上海微系统与信息技术研究所 | 化学机械抛光液 |
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| US8309468B1 (en) | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
| RU2605941C2 (ru) * | 2011-08-01 | 2016-12-27 | Басф Се | СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА Si1-x Gex В ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ |
| EP2554612A1 (en) * | 2011-08-01 | 2013-02-06 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5 |
| JP2013080751A (ja) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | 研磨用組成物 |
| JP2013084876A (ja) * | 2011-09-30 | 2013-05-09 | Fujimi Inc | 研磨用組成物 |
| WO2013130366A1 (en) * | 2012-02-27 | 2013-09-06 | Applied Materials, Inc. | Feedback control using detection of clearance and adjustment for uniform topography |
| US20150060400A1 (en) * | 2012-04-18 | 2015-03-05 | Fujimi Incorporated | Polishing composition |
| JP2013247341A (ja) | 2012-05-29 | 2013-12-09 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| CN103158057B (zh) * | 2013-03-06 | 2016-02-17 | 中国科学院上海微系统与信息技术研究所 | 确定相变材料的化学机械抛光停止点的方法及检测系统 |
| JP6139975B2 (ja) * | 2013-05-15 | 2017-05-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN103484025B (zh) * | 2013-09-25 | 2015-07-08 | 上海新安纳电子科技有限公司 | 一种自停止的gst化学机械抛光液及其制备方法和应用 |
| KR102684975B1 (ko) | 2019-01-17 | 2024-07-17 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2585963B2 (ja) * | 1993-12-10 | 1997-02-26 | 日本エクシード株式会社 | 化合物半導体のための研磨液及びこれを用いた化合物半導体の研磨方法 |
| US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6702954B1 (en) * | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
| TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
| KR100615598B1 (ko) * | 2004-07-19 | 2006-08-25 | 삼성전자주식회사 | 평탄화 절연막을 갖는 반도체 장치들 및 그 형성방법들 |
| KR20060016498A (ko) * | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
| KR100653701B1 (ko) * | 2004-08-20 | 2006-12-04 | 삼성전자주식회사 | 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법 |
| CN1300271C (zh) * | 2004-09-24 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用 |
| US20060216935A1 (en) * | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
| KR100682948B1 (ko) * | 2005-07-08 | 2007-02-15 | 삼성전자주식회사 | 상전이 메모리 소자 및 그 제조방법 |
| KR100657972B1 (ko) * | 2005-10-28 | 2006-12-14 | 삼성전자주식회사 | 상변화 메모리 소자와 그 동작 및 제조 방법 |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| KR20090002506A (ko) * | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법 |
| CN101765647B (zh) * | 2007-07-26 | 2016-05-04 | 卡伯特微电子公司 | 用于相变材料的化学-机械抛光的组合物及方法 |
-
2008
- 2008-07-24 CN CN200880100535.9A patent/CN101765647B/zh not_active Expired - Fee Related
- 2008-07-24 JP JP2010518218A patent/JP5529736B2/ja not_active Expired - Fee Related
- 2008-07-24 EP EP08794699.2A patent/EP2183333B1/en not_active Not-in-force
- 2008-07-24 KR KR1020107004124A patent/KR101325455B1/ko not_active Expired - Fee Related
- 2008-07-24 WO PCT/US2008/008978 patent/WO2009017652A2/en not_active Ceased
- 2008-07-24 MY MYPI2010000231A patent/MY155239A/en unknown
- 2008-07-24 US US12/670,495 patent/US20100190339A1/en not_active Abandoned
- 2008-07-24 SG SG2012055414A patent/SG183081A1/en unknown
- 2008-07-25 TW TW097128419A patent/TWI385243B/zh not_active IP Right Cessation
-
2010
- 2010-01-14 IL IL203300A patent/IL203300A/en not_active IP Right Cessation
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