JP2011503873A5 - - Google Patents
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- Publication number
- JP2011503873A5 JP2011503873A5 JP2010533104A JP2010533104A JP2011503873A5 JP 2011503873 A5 JP2011503873 A5 JP 2011503873A5 JP 2010533104 A JP2010533104 A JP 2010533104A JP 2010533104 A JP2010533104 A JP 2010533104A JP 2011503873 A5 JP2011503873 A5 JP 2011503873A5
- Authority
- JP
- Japan
- Prior art keywords
- mechanical polishing
- polishing composition
- chemical mechanical
- oxidizing agent
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 32
- 239000007800 oxidant agent Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- URSLCTBXQMKCFE-UHFFFAOYSA-N dihydrogenborate Chemical compound OB(O)[O-] URSLCTBXQMKCFE-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000008365 aqueous carrier Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 125000005342 perphosphate group Chemical group 0.000 claims 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 7
- 229910052707 ruthenium Inorganic materials 0.000 claims 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 230000003647 oxidation Effects 0.000 claims 4
- 238000007254 oxidation reaction Methods 0.000 claims 4
- 150000002978 peroxides Chemical class 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 2
- XSVSPKKXQGNHMD-UHFFFAOYSA-N 5-bromo-3-methyl-1,2-thiazole Chemical compound CC=1C=C(Br)SN=1 XSVSPKKXQGNHMD-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 239000003082 abrasive agent Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- JEYGLZIYVWWWDW-UHFFFAOYSA-N dodecapotassium;tetraborate;tetrahydrate Chemical compound O.O.O.O.[K+].[K+].[K+].[K+].[K+].[K+].[K+].[K+].[K+].[K+].[K+].[K+].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] JEYGLZIYVWWWDW-UHFFFAOYSA-N 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 125000001453 quaternary ammonium group Chemical group 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 description 5
- -1 phosphate peroxide Chemical class 0.000 description 5
- 229910019142 PO4 Inorganic materials 0.000 description 4
- 239000010452 phosphate Substances 0.000 description 4
- MSACGCINQCCHBD-UHFFFAOYSA-N 2,4-dioxo-4-(4-piperidin-1-ylphenyl)butanoic acid Chemical compound C1=CC(C(=O)CC(=O)C(=O)O)=CC=C1N1CCCCC1 MSACGCINQCCHBD-UHFFFAOYSA-N 0.000 description 1
- QZNWNKFWDJRMLV-UHFFFAOYSA-N azane;2-hydroxy-4-[(4-hydroxy-1,3,2,4-dioxadiboretan-2-yl)oxy]-1,3,2,4-dioxadiboretane;tetrahydrate Chemical compound N.N.O.O.O.O.O1B(O)OB1OB1OB(O)O1 QZNWNKFWDJRMLV-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/937,804 | 2007-11-09 | ||
| US11/937,804 US20090124173A1 (en) | 2007-11-09 | 2007-11-09 | Compositions and methods for ruthenium and tantalum barrier cmp |
| PCT/US2008/012564 WO2009064365A2 (en) | 2007-11-09 | 2008-11-07 | Compositions and methods for ruthenium and tantalum barrier cmp |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011503873A JP2011503873A (ja) | 2011-01-27 |
| JP2011503873A5 true JP2011503873A5 (enExample) | 2013-08-22 |
| JP5449180B2 JP5449180B2 (ja) | 2014-03-19 |
Family
ID=40624144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010533104A Active JP5449180B2 (ja) | 2007-11-09 | 2008-11-07 | ルテニウム及びタンタルバリアｃｍｐ用の組成物及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090124173A1 (enExample) |
| JP (1) | JP5449180B2 (enExample) |
| KR (1) | KR101557514B1 (enExample) |
| TW (1) | TWI392727B (enExample) |
| WO (1) | WO2009064365A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| JP6050934B2 (ja) | 2011-11-08 | 2016-12-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| US8778212B2 (en) | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
| CN103897602B (zh) * | 2012-12-24 | 2017-10-13 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及抛光方法 |
| US9196283B1 (en) | 2013-03-13 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetic recording transducer using a chemical buffer |
| CN105431506A (zh) * | 2013-07-31 | 2016-03-23 | 高级技术材料公司 | 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂 |
| US9299585B2 (en) | 2014-07-28 | 2016-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing substrates containing ruthenium and copper |
| JPWO2016140246A1 (ja) * | 2015-03-04 | 2017-12-07 | 日立化成株式会社 | Ｃｍｐ用研磨液、及び、これを用いた研磨方法 |
| US10937691B2 (en) * | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
| JP7219061B2 (ja) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
| KR102765340B1 (ko) * | 2019-08-30 | 2025-02-13 | 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. | 재료 제거 작업을 수행하기 위한 유체 조성물 및 방법 |
| KR102765341B1 (ko) * | 2019-08-30 | 2025-02-13 | 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. | 재료 제거 작업을 수행하기 위한 조성물 및 방법 |
| CN120041101B (zh) * | 2025-02-20 | 2025-09-23 | 中国矿业大学(北京) | 一种用于芯片高k介质金属栅钌栅平坦化的抛光液及其制备方法与应用 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5405646A (en) * | 1992-10-14 | 1995-04-11 | Nanis; Leonard | Method of manufacture thin film magnetic disk |
| US6299795B1 (en) * | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
| US6461227B1 (en) * | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
| US7029373B2 (en) * | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US6692546B2 (en) * | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US6800218B2 (en) * | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
| US20050028449A1 (en) * | 2001-09-03 | 2005-02-10 | Norihiko Miyata | Polishing composition |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
| US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
| JP3749867B2 (ja) * | 2002-03-08 | 2006-03-01 | 株式会社東芝 | アルミニウム系金属用研磨液および半導体装置の製造方法 |
| US6604987B1 (en) * | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
| CN101371339A (zh) * | 2003-05-12 | 2009-02-18 | 高级技术材料公司 | 用于步骤ⅱ的铜衬里和其他相关材料的化学机械抛光组合物及其使用方法 |
| US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
| US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
| US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
-
2007
- 2007-11-09 US US11/937,804 patent/US20090124173A1/en not_active Abandoned
-
2008
- 2008-11-07 JP JP2010533104A patent/JP5449180B2/ja active Active
- 2008-11-07 KR KR1020107012588A patent/KR101557514B1/ko not_active Expired - Fee Related
- 2008-11-07 TW TW097143226A patent/TWI392727B/zh active
- 2008-11-07 WO PCT/US2008/012564 patent/WO2009064365A2/en not_active Ceased
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